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公开(公告)号：US20230420587A1
公开(公告)日：2023-12-28
申请号：US18136049
申请日：2023-04-18
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Islam Sayed , Sang Ho Oh , Nathan Young
IPC: H01L31/0352 , H01L31/0304 , H01L31/0392 , H01L31/109 , H01L31/18
CPC classification number: H01L31/035263 , H01L31/03042 , H01L31/03048 , H01L31/0392 , H01L31/109 , H01L31/1848
Abstract: The present invention relates to techniques, including methods and devices, for optical technology. In particular, the present invention provides methods, devices, and structures for optical devices, and in particular, photo diodes, commonly called photo sensors.
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公开(公告)号：US11800077B2
公开(公告)日：2023-10-24
申请号：US17506412
申请日：2021-10-20
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Vlad Joseph Novotny , Paul Rudy
CPC classification number: H04N9/77 , F21K9/64 , G02B26/101 , G02B26/105 , G02B27/0101 , H04N9/312 , H04N9/3129 , H04N9/3135 , H04N9/3144 , H04N9/3188 , G02B2027/0112
Abstract: In an example, the present invention provides an optical engine apparatus. The apparatus has a laser diode device, the laser diode device characterized by a wavelength ranging from 300 to 2000 nm or any variations thereof. In an example, the apparatus has a lens coupled to an output of the laser diode device and a scanning mirror device operably coupled to the laser diode device. In an example, the apparatus has an un-patterned phosphor plate coupled to the scanning mirror and configured with the laser device; and a spatial image formed on a portion of the un-patterned phosphor plate configured by a modulation of the laser and movement of the scanning mirror device.
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公开(公告)号：US11791606B1
公开(公告)日：2023-10-17
申请号：US17141788
申请日：2021-01-05
Applicant: KYOCERA SLD Laser, Inc.
Inventor： James W. Raring , Mathew C. Schmidt , Yu-Chia Chang
IPC: H01S5/042 , B82Y20/00 , H01L33/00 , H01S5/343 , H01S5/34 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/40 , H01L33/06 , H01S5/32
CPC classification number: H01S5/0427 , B82Y20/00 , H01L33/0045 , H01S5/0651 , H01S5/2031 , H01S5/22 , H01S5/34 , H01S5/3407 , H01S5/34333 , H01L33/06 , H01S5/0652 , H01S5/32025 , H01S5/320275 , H01S5/3414 , H01S5/405 , H01S5/4087 , H01S2301/02
Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
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公开(公告)号：US11742631B1
公开(公告)日：2023-08-29
申请号：US17476776
申请日：2021-09-16
Applicant: KYOCERA SLD Laser, Inc.
Inventor： James W. Raring , Hua Huang , Phillip Skahan , Sang-Ho Oh , Ben Yonkee , Alexander Sztein , Qiyuan Wei
CPC classification number: H01S5/0287 , H01S5/0203 , H01S5/0282 , H01S5/0425 , H01S5/34333 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S2304/04
Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
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公开(公告)号：US11715931B1
公开(公告)日：2023-08-01
申请号：US17495378
申请日：2021-10-06
Applicant: KYOCERA SLD Laser, Inc.
Inventor： James W. Raring , Christiane Poblenz Elsass
IPC: H01L21/00 , H01S5/34 , H01S5/22 , H01S5/32 , H01S5/30 , H01L33/32 , H01L33/06 , H01L33/12 , H01L21/02 , H01S5/20 , H01L33/16 , H01S5/343 , H01L33/00 , H01S5/10
CPC classification number: H01S5/3403 , H01L21/0254 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/1082 , H01S5/2018 , H01S5/2031 , H01S5/2201 , H01S5/3063 , H01S5/3201 , H01S5/3202 , H01S5/3213 , H01S5/3406 , H01S5/34333 , H01S5/34346 , H01L21/0262 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01S5/2009 , H01S5/320275
Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
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Patent Agency Ranking
公开(公告)号：US11715927B2
公开(公告)日：2023-08-01
申请号：US17552261
申请日：2021-12-15
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Melvin McLaurin , James W. Raring
CPC classification number: H01S5/0217 , H01S5/0203 , H01S5/34333 , H01S2304/12
Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.
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公开(公告)号：US20230238767A1
公开(公告)日：2023-07-27
申请号：US18129615
申请日：2023-03-31
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Sten Heikman , Terry Towe , Sudeep Khanal
IPC: H01S5/00 , H01S5/32 , H01S5/22 , H01S5/343 , H01S5/02224 , H01S5/024 , H01S5/02257 , H01S5/02325
CPC classification number: H01S5/0087 , H01S5/32 , H01S5/2201 , H01S5/3203 , H01S5/34333 , H01S5/02224 , H01S5/02469 , H01S5/02476 , H01S5/02257 , H01S5/02325 , F21V29/70
Abstract: A laser-based light source includes a material arranged on a package base adjacent to a laser diode chip and an optical element coupled to the material. The optical element is aligned to receive electromagnetic radiation from the laser diode chip. The optical element includes a wavelength conversion material and is configured to receive at least a portion of the electromagnetic radiation emitted by the laser diode chip. A reflective material surrounds sides of the optical element.
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公开(公告)号：US11705689B2
公开(公告)日：2023-07-18
申请号：US17377835
申请日：2021-07-16
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Alexander Sztein , Melvin McLaurin , Po Shan Hsu , James W. Raring
IPC: H01S5/32 , H01S5/02 , H01S5/343 , H01S5/0234
CPC classification number: H01S5/0203 , H01S5/0202 , H01S5/0205 , H01S5/0215 , H01S5/0217 , H01S5/0234 , H01S5/3202 , H01S5/320275 , H01S5/34333 , H01S5/34346
Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.
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公开(公告)号：US11677468B2
公开(公告)日：2023-06-13
申请号：US17667303
申请日：2022-02-08
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Melvin McLaurin , James W. Raring , Paul Rudy , Vlad Novotny
IPC: H04B10/116 , H01S5/343 , G02B27/09 , H04B10/50 , H01S5/40 , H01S5/02251 , H01S5/00 , H01S5/22 , H04B10/572 , H01L33/00 , H04B10/564 , H04B10/524 , H04B10/60 , H01S5/02212 , H01S5/02 , H01S5/10 , H01S5/32 , H01S5/02216 , H01S5/20 , H01S5/026 , H01S5/042 , H04B10/114 , H01S5/02326 , H01S5/02345
CPC classification number: H04B10/116 , G02B27/0916 , H01S5/005 , H01S5/0087 , H01S5/02251 , H01S5/34333 , H01S5/4012 , H04B10/502 , H01L33/0045 , H01S5/0071 , H01S5/0202 , H01S5/0203 , H01S5/026 , H01S5/02212 , H01S5/02216 , H01S5/02326 , H01S5/02345 , H01S5/04254 , H01S5/04256 , H01S5/1039 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S5/4031 , H01S5/4087 , H01S5/4093 , H04B10/114 , H04B10/1141 , H04B10/5057 , H04B10/524 , H04B10/564 , H04B10/572 , H04B10/60
Abstract: A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.
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公开(公告)号：US20230176289A1
公开(公告)日：2023-06-08
申请号：US18078575
申请日：2022-12-09
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Eric Goutain , James W. Raring , Paul Rudy , Hua Huang
IPC: G02B6/27 , F21K9/64 , H01S5/00 , H01S5/024 , H01S5/22 , H01S5/343 , H01S5/40 , B82Y20/00 , G02B6/42 , F21K9/60 , F21V9/32 , F21V9/30 , H01S5/0233 , H01S5/0235 , H01S5/02251 , H01S5/02255 , H01S5/02326 , H01S5/02315 , F21V29/71 , F21V29/83 , F21V23/06 , F21V8/00 , H01S5/02224 , H01S5/323 , F21K9/62 , G02B6/26
CPC classification number: G02B6/27 , F21K9/64 , H01S5/005 , H01S5/02476 , H01S5/2201 , H01S5/34333 , H01S5/4012 , H01S5/4031 , B82Y20/00 , G02B6/4214 , G02B6/4249 , F21K9/60 , F21V9/32 , F21V9/30 , H01S5/0233 , H01S5/0235 , H01S5/02251 , H01S5/02255 , H01S5/02326 , H01S5/02315 , F21V29/713 , F21V29/83 , F21V23/06 , G02B6/0005 , H01S5/02469 , H01S5/0085 , H01S5/0092 , H01S5/02224 , H01S5/32341 , H01S5/4025 , F21K9/62 , G02B6/26 , H01S5/3235 , F21Y2115/30
Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.
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