公开(公告)号：US20110192887A1

公开(公告)日：2011-08-11

申请号：US13088727

申请日：2011-04-18

申请人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Paul A. Lauro ,  Jae-Woong Nah

发明人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Paul A. Lauro ,  Jae-Woong Nah

IPC分类号： B23K1/20

CPC分类号： B23K3/0638 ,  B23K3/08 ,  B23K2101/42 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K1/111 ,  H05K3/3457 ,  H05K2201/09472 ,  H05K2203/0126 ,  Y10T29/49826 ,  Y10T156/1062 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.

公开(公告)号：US20110156256A1

公开(公告)日：2011-06-30

申请号：US12647999

申请日：2009-12-28

申请人： Sung K. Kang ,  Paul A. Lauro ,  Minhua Lu ,  Da-Yuan Shih

发明人： Sung K. Kang ,  Paul A. Lauro ,  Minhua Lu ,  Da-Yuan Shih

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/16503 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0109 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/01026 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.

摘要翻译： 一种方法包括通过向Cu层施加包含NiFe的金属反应阻挡层来制造包含Cu层的电迁移性凸块下金属化（UBM）倒装芯片结构。 在倒装芯片结构中使用的焊料基本上包括无铅锡。 一种结构包括通过该方法生产的产品。 在另一个实施方案中，一种方法包括制造抗电镀UBM Sn的无铅焊料凸块倒装芯片结构，其中电迁移阻挡UBM结构包括四层结构或三层结构，其中四层结构是 通过提供1）粘合层形成，2）用于电镀的Cu籽晶层，3）反应阻挡层，以及4）用于与焊料接合的可湿性层，并且通过提供1）一种 粘合层，2）反应阻挡层，和3）可湿性层。 在另一个实施方案中，反应阻挡层包含选自Ni，Fe，Pd，Pt，Co，Cu及其合金的金属及其组合。 一种结构包括由上述方法生产的产品。

公开(公告)号：US07923849B2

公开(公告)日：2011-04-12

申请号：US12113152

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L21/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20100193949A1

公开(公告)日：2010-08-05

申请号：US12364684

申请日：2009-02-03

申请人： Luc L. Belanger ,  Marc A. Bergendahl ,  Ajay P. Giri ,  Paul A. Lauro ,  Valerie A. Oberson ,  Da-Yuan Shih

发明人： Luc L. Belanger ,  Marc A. Bergendahl ,  Ajay P. Giri ,  Paul A. Lauro ,  Valerie A. Oberson ,  Da-Yuan Shih

IPC分类号： H01L23/48 ,  H01L21/302

CPC分类号： H01L24/11 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01028 ,  H01L2924/04941

摘要： Methods and UBM structures having bilayer or trilayer UBM layers that include a thin TiW adhesion layer and a thick Ni-based barrier layer thereover both deposited under sputtering operating conditions that provide the resultant bilayer or trilayer UBM layers with minimal composite stresses. The Ni-based barrier layer may be pure Ni or a Ni alloy. These UBM layers may be patterned to fabricate bilayer or trilayer UBM capture pads, followed by joining a lead-free solder thereto for providing lead-free solder joints that maintain reliability after multiple reflows. Optionally, the top layer of the trilayer UBM structures may include soluble or insoluble metals for doping the lead-free solder connections.

摘要翻译： 具有双层或三层UBM层的方法和UBM结构，其在包括薄TiW粘附层和厚Ni基阻挡层的两个或三层UBM层上沉积在溅射操作条件下，以最小的复合应力提供所得到的双层或三层UBM层。 Ni基阻挡层可以是纯Ni或Ni合金。 这些UBM层可以被图案化以制造双层或三层UBM捕获垫，随后将无铅焊料接合到其上以提供在多次回流之后保持可靠性的无铅焊点。 任选地，三层UBM结构的顶层可以包括用于掺杂无铅焊料连接的可溶性或不溶性金属。

公开(公告)号：US07736152B2

公开(公告)日：2010-06-15

申请号：US12249035

申请日：2008-10-10

申请人： Gareth G. Hougham ,  Keith E. Fogel ,  Paul A. Lauro ,  Joseph Zinter, Jr.

发明人： Gareth G. Hougham ,  Keith E. Fogel ,  Paul A. Lauro ,  Joseph Zinter, Jr.

IPC分类号： H01R12/00

CPC分类号： H01R13/2414 ,  H01R12/7082 ,  H01R12/714 ,  H01R43/007 ,  H05K3/4007 ,  H05K3/42 ,  H05K7/1061 ,  H05K2201/0133 ,  H05K2201/0367 ,  H05K2201/0959 ,  H05K2201/10378 ,  Y10S439/931 ,  Y10T442/109 ,  Y10T442/172

摘要： Methods for fabricating Land Grid Array (LGA) interposer contacts that are both conducting and elastic. Also provided are LGA interposer contacts as produced by the inventive methods. Provided is LGA type which utilizes a pure unfilled elastomer button core that is covered with an electrically-conductive material that is continuous from the top surface to the bottom surface of the button structure. In order to obviate the disadvantages and drawbacks which are presently encountered in the technology pertaining to the fabrication and structure of land grid arrays using electrically-conductive interposer contacts, there is provided both methods and structure for molding elastomer buttons into premetallized LGA carrier sheets, and wherein the non-conductive elastomer buttons are surface-metallized in order to convert them into conductive electrical contacts.

摘要翻译： 制造导电和弹性的Land Grid Array（LGA）插入器触点的方法。 还提供了通过本发明的方法制造的LGA插入器触点。 提供了LGA型，其利用由从按钮结构的顶表面到底表面连续的导电材料覆盖的纯未填充弹性体按钮芯。 为了消除在使用导电插入器触点的地面栅格阵列的制造和结构的技术中目前遇到的缺点和缺点，提供了用于将弹性体按钮模制成预金属化的LGA载体片的方法和结构，以及 其中非导电弹性体按钮被表面金属化以便将它们转换为导电电触点。

公开(公告)号：US07694719B2

公开(公告)日：2010-04-13

申请号：US11619928

申请日：2007-01-04

申请人： Bruce K. Furman ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

发明人： Bruce K. Furman ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

IPC分类号： F28F7/00

CPC分类号： H01L23/433 ,  F28F13/00 ,  F28F2013/005 ,  H01L2224/73253 ,  Y10T29/4935 ,  Y10T29/53113

摘要： The present invention is a patterned metal thermal interface. In one embodiment a system for dissipating heat from a heat-generating device includes a heat sink having a first surface adapted for thermal coupling to a first surface of the heat generating device and a thermal interface having at least one patterned surface, the thermal interface being adapted to thermally couple the first surface of the heat sink to the first surface of the heat generating device. The patterned surface of the thermal interface allows the thermal interface to deform under compression between the heat sink and the heat generating device, leading to better conformity of the thermal interface to the surfaces of the heat sink and the heat generating device.

摘要翻译： 本发明是图案化的金属热界面。 在一个实施例中，用于从发热装置散热的系统包括具有适于热耦合到发热装置的第一表面的第一表面的散热器和具有至少一个图案化表面的热界面，所述热界面是 适于将散热器的第一表面热耦合到发热装置的第一表面。 热界面的图案化表面允许热界面在散热器和发热装置之间的压缩下变形，导致热界面与散热器和发热装置的表面更好地一致。

公开(公告)号：US07523852B2

公开(公告)日：2009-04-28

申请号：US11005557

申请日：2004-12-05

申请人： Stephen L. Buchwalter ,  Claudius Feger ,  Peter A. Gruber ,  Sung K. Kang ,  Paul A. Lauro ,  Da-Yuan Shih

发明人： Stephen L. Buchwalter ,  Claudius Feger ,  Peter A. Gruber ,  Sung K. Kang ,  Paul A. Lauro ,  Da-Yuan Shih

IPC分类号： B23K35/12

CPC分类号： H05K3/3436 ,  B23K35/26 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3426 ,  H05K3/3468 ,  H05K2201/10287 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0415 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Improved interconnects are produced by injection molded solder which fills mold arrays with molten solder so that columns that have much greater height to width aspect ratios greater than one are formed, rather than conventional flip chip bumps. The columns may have filler particles or reinforcing conductors therein. In the interconnect structures produced, the cost and time of a subsequent underfill step is reduced or avoided. The problem of incompatibility with optical interconnects between chips because underfills require high loading of silica fillers which scatter light, is solved, thus allowing flip chips to incorporate optical interconnects.

摘要翻译： 改进的互连通过注射成型的焊料生产，该焊料用熔融焊料填充模具阵列，使得形成具有大于1的高宽比宽高比的柱而不是传统的倒装芯片凸块。 该列可以在其中具有填料颗粒或增强导体。 在所生产的互连结构中，减少或避免了后续底部填充步骤的成本和时间。 与芯片之间的光学互连不兼容的问题，因为底部填充物需要高散射光的二氧化硅填料的高负载，因此可以使倒装芯片结合光学互连。

公开(公告)号：US07479014B2

公开(公告)日：2009-01-20

申请号：US10531494

申请日：2003-05-13

申请人： Gareth G. Hougham ,  Keith E. Fogel ,  Paul A. Lauro ,  Joseph Zinter, Jr.

发明人： Gareth G. Hougham ,  Keith E. Fogel ,  Paul A. Lauro ,  Joseph Zinter, Jr.

IPC分类号： H01R12/00

CPC分类号： H01R13/2414 ,  H01R12/7082 ,  H01R12/714 ,  H01R43/007 ,  H05K3/4007 ,  H05K3/42 ,  H05K7/1061 ,  H05K2201/0133 ,  H05K2201/0367 ,  H05K2201/0959 ,  H05K2201/10378 ,  Y10S439/931 ,  Y10T442/109 ,  Y10T442/172

摘要： Methods for fabricating Land Grid Array (LGA) interposer contacts that are both conducting and elastic. Also provided are LGA interposer contacts as produced by the inventive methods. Provided is LGA type which utilizes a pure unfilled elastomer button core that is covered with an electrically-conductive material that is continuous from the top surface to the bottom surface of the button structure. In order to obviate the disadvantages and drawbacks which are presently encountered in the technology pertaining to the fabrication and structure of land grid arrays using electrically-conductive interposer contacts, there is provided both methods and structure for molding elastomer buttons into premetallized LGA carrier sheets, and wherein the non-conductive elastomer buttons are surface-metallized in order to convert them into conductive electrical contacts.

摘要翻译： 制造导电和弹性的Land Grid Array（LGA）插入器触点的方法。 还提供了通过本发明的方法制造的LGA插入器触点。 提供了LGA型，其利用由从按钮结构的顶表面到底表面连续的导电材料覆盖的纯未填充弹性体按钮芯。 为了消除在使用导电插入器触点的地面栅格阵列的制造和结构的技术中目前遇到的缺点和缺点，提供了用于将弹性体按钮模制成预金属化的LGA载体片的方法和结构，以及 其中非导电弹性体按钮被表面金属化以便将它们转换为导电电触点。

公开(公告)号：US5371654A

公开(公告)日：1994-12-06

申请号：US963346

申请日：1992-10-19

申请人： Brian S. Beaman ,  Fuad E. Doany ,  Keith E. Fogel ,  James L. Hedrick, Jr. ,  Paul A. Lauro ,  Maurice H. Norcott ,  John J. Ritsko ,  Leathen Shi ,  Da-Yuan Shih ,  George F. Walker

发明人： Brian S. Beaman ,  Fuad E. Doany ,  Keith E. Fogel ,  James L. Hedrick, Jr. ,  Paul A. Lauro ,  Maurice H. Norcott ,  John J. Ritsko ,  Leathen Shi ,  Da-Yuan Shih ,  George F. Walker

IPC分类号： H01L23/52 ,  G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  G01R31/28 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H05K7/00

CPC分类号： G01R1/07371 ,  G01R1/07307 ,  G01R1/07314 ,  G01R1/07342 ,  G01R3/00 ,  G01R31/2886 ,  H01L23/49827 ,  H01L23/5384 ,  H01L25/0652 ,  G01R1/06711 ,  G01R1/0675 ,  G01R1/07378 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/1627 ,  H01L2924/19107 ,  H01L2924/3011 ,  Y10S29/029 ,  Y10T29/49004 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49158 ,  Y10T29/49162 ,  Y10T29/49192 ,  Y10T29/53174

摘要： The present invention is directed to a structure for packaging electronic devices, such as semiconductor chips, in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies. Each assembly is formed from a substrate having disposed on at least one surface a plurality of electronic devices. Each assembly is disposed in a stack of adjacent assemblies. Between adjacent assemblies there is an electrical interconnection electrically interconnecting each assembly. The electrical interconnection formed from an elastomeric interposer having a plurality of apertures extending therethrough. The array of apertures corresponds to the array of electronic devices on the substrates. The aperture and electrical interconnection is disposed over the array of electronic devices so that the electrical interconnection between adjacent electronic devices. The stack of assemblies is compressed thereby compressing the electrical interconnection between adjacent assemblies. Methods for fabricating the electrical interconnection as a stand alone elastomeric sheet are described.

摘要翻译： 本发明涉及用于将三维结构中的诸如半导体芯片的电子器件封装在一起的结构，其允许电信号水平和垂直地传播。 该结构由多个组件形成。 每个组件由在多个电子装置的至少一个表面上设置的基板形成。 每个组件设置在相邻组件的堆叠中。 在相邻组件之间存在电互连，每个组件电连接。 由具有延伸穿过其中的多个孔的弹性体插入件形成的电互连。 孔阵列对应于基片上的电子器件阵列。 孔和电互连布置在电子器件阵列上，使得相邻电子器件之间的电互连。 组合堆叠被压缩，从而压缩相邻组件之间的电互连。 描述了用于制造作为独立弹性片的电互连的方法。

公开(公告)号：US09273408B2

公开(公告)日：2016-03-01

申请号：US13612812

申请日：2012-09-12

申请人： Bing Dang ,  Michael A. Gaynes ,  Paul A. Lauro ,  Jae-Woong Nah

发明人： Bing Dang ,  Michael A. Gaynes ,  Paul A. Lauro ,  Jae-Woong Nah

IPC分类号： B23K1/20 ,  C25D5/02 ,  H01L21/02 ,  H01L23/00 ,  C25D7/12 ,  H05K3/34

CPC分类号： H01L24/11 ,  C25D5/022 ,  C25D7/123 ,  H01L21/02107 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/11001 ,  H01L2224/11002 ,  H01L2224/11312 ,  H01L2224/1141 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1162 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/81801 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K3/3436 ,  H05K2201/10734 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01026 ,  H01L2924/00

摘要： Solder bumps are provided on round wafers through the use of injection molded solder. Copper pillars or ball limiting metallurgy are formed over I/O pads within the channels of a patterned mask layer. Solder is injected over the pillars or BLM, filling the channels. Molten solder can be injected in cavities formed in round wafers without leakage using a carrier assembly that accommodates wafers that have been previously subjected to mask layer deposition and patterning. One such carrier assembly includes an elastomeric body portion having a round recess, the walls of the recess forming a tight seal with the round wafer. Other carrier assemblies employ adhesives applied around the peripheral edges of the wafers to ensure sealing between the carrier assemblies and wafers.

摘要翻译： 通过使用注射成型焊料在圆形晶片上提供焊料凸块。 在图案化掩模层的通道内的I / O焊盘上形成铜柱或极限极限冶金。 焊料注入柱子或BLM，填充通道。 可以使用容纳预先经过掩模层沉积和图案化的晶片的载体组件将熔融的焊料注入到圆形晶片形成的空腔中而不发生泄漏。 一个这样的载体组件包括具有圆形凹部的弹性体主体部分，凹部的壁与圆形晶片形成紧密密封。 其他载体组件使用施加在晶片的周边边缘周围的粘合剂，以确保载体组件和晶片之间的密封。