Flexible semiconductor device and method for producing the same
    27.
    发明授权
    Flexible semiconductor device and method for producing the same 有权
    柔性半导体器件及其制造方法

    公开(公告)号:US08525178B2

    公开(公告)日:2013-09-03

    申请号:US13498700

    申请日:2011-04-14

    Abstract: A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

    Abstract translation: 柔性半导体器件包括其上形成有半导体元件的绝缘膜。 绝缘膜的顶表面和底表面分别具有顶部布线图案层和底部布线图案层。 半导体元件包括形成在绝缘膜的顶表面上的半导体层,形成在绝缘膜的顶表面上以与半导体层接触的源电极和漏电极,以及形成在底表面上的栅电极 的绝缘膜与半导体层相对。 作为与源极电极,漏极电极,顶部布线图案层和底部布线图案层相对的绝缘膜的厚度的第一厚度大于第二厚度,其是第二厚度,其是绝缘膜的厚度 栅电极和半导体层。

Patent Agency Ranking