公开(公告)号：US20130181338A1

公开(公告)日：2013-07-18

申请号：US13349405

申请日：2012-01-12

申请人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/20

CPC分类号： H01L23/3192 ,  H01L21/56 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02331 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/10126 ,  H01L2224/11464 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/73104 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A structure comprises a post passivation interconnect layer formed over a semiconductor substrate, a metal bump formed over the post passivation interconnect layer and a molding compound layer formed over the semiconductor substrate. A lower portion of the metal bump is embedded in the molding compound layer and a middle portion of the metal bump is surrounded by a concave meniscus molding compound protection layer.

摘要翻译： 一种结构包括形成在半导体衬底上的后钝化互连层，形成在后钝化互连层上的金属凸块和形成在半导体衬底上的模塑复合层。 金属凸块的下部嵌入在模塑料层中，并且金属凸块的中间部分被凹弯月面模塑料保护层包围。

公开(公告)号：US20130143361A1

公开(公告)日：2013-06-06

申请号：US13309311

申请日：2011-12-01

申请人： Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/60 ,  H01L23/12

CPC分类号： H01L21/6835 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11444 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/14135 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75754 ,  H01L2224/7698 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83102 ,  H01L2224/9205 ,  H01L2224/92125 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/3841 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/05552 ,  H01L2924/013

摘要： Packaging process tools and systems, and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure for supporting package substrates or integrated circuit die during a packaging process for the integrated circuit die. The mechanical structure includes a low thermal conductivity material disposed thereon.

摘要翻译： 公开了用于半导体器件的封装加工工具和系统以及封装方法。 在一个实施例中，用于半导体器件的封装处理工具包括用于在集成电路管芯的封装工艺期间支撑封装衬底或集成电路管芯的机械结构。 机械结构包括设置在其上的低热导率材料。

公开(公告)号：US20130122652A1

公开(公告)日：2013-05-16

申请号：US13298056

申请日：2011-11-16

申请人： Hsiu-Jen Lin ,  Chih-Wei Lin ,  Cheng-Ting Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Hsiu-Jen Lin ,  Chih-Wei Lin ,  Cheng-Ting Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/50

CPC分类号： H01L24/75 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/75283 ,  H01L2224/7598 ,  H01L2224/81005 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/8123 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/81

摘要： A method includes placing a cover over a lower package component, wherein the cover comprises an opening aligned to the lower package component. An upper package component is placed over the lower package component. The upper package component is aligned to the opening, and a solder region is dispose between the upper package component and the lower package component. The cover and the upper package component are exposed to a radiation to reflow the solder region.

摘要翻译： 一种方法包括将盖子放置在下部封装部件上，其中盖子包括与下部封装部件对准的开口。 上封装组件放置在下封装组件上。 上部封装部件与开口对准，并且焊接区域配置在上部封装部件和下部封装部件之间。 盖和上部封装部件暴露于辐射以回流焊接区域。

公开(公告)号：US20130113116A1

公开(公告)日：2013-05-09

申请号：US13291882

申请日：2011-11-08

申请人： Meng-Tse Chen ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chih Chun Chiu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chih Chun Chiu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/48 ,  H01L21/4853 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15321 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05647

摘要： A system and method for forming contacts is provided. An embodiment comprises forming the contacts on a substrate and then coining the contacts by physically shaping them using, e.g., a molding chamber. The physical shaping of the contacts may be performed using a patterned portion of the molding chamber or else by placing a patterned stencil around the contacts prior before a force is applied to physically reshape the contacts. The contacts may be reshaped into a cylindrical, oval, cuboid, or rectangular shape, for example.

公开(公告)号：US20130099385A1

公开(公告)日：2013-04-25

申请号：US13280157

申请日：2011-10-24

申请人： Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/538 ,  H01L21/66

CPC分类号： H01L25/50 ,  H01L21/31105 ,  H01L21/565 ,  H01L22/12 ,  H01L22/20 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/562 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/1131 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A device includes a package component having conductive features on a top surface, and a polymer region molded over the top surface of the first package component. A plurality of openings extends from a top surface of the polymer region into the polymer region, wherein each of the conductive features is exposed through one of the plurality of openings. The plurality of openings includes a first opening having a first horizontal size, and a second opening having a second horizontal size different from the first horizontal size.

公开(公告)号：US08405199B2

公开(公告)日：2013-03-26

申请号：US12832231

申请日：2010-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在盖层的顶表面之上。

公开(公告)号：US20130062761A1

公开(公告)日：2013-03-14

申请号：US13228768

申请日：2011-09-09

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06515 ,  H01L2224/09181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.

公开(公告)号：US20120322255A1

公开(公告)日：2012-12-20

申请号：US13161303

申请日：2011-06-15

申请人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1133 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2224/11

摘要： A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.

摘要翻译： 提供一种用于形成金属凸块的系统和方法。 一个实施例包括将导电材料附着到载体介质上，然后将导电材料接触到基底的导电区域。 然后使用接合工艺将导电材料的部分结合到导电区域，以在导电区域上形成导电盖，并且去除残留的导电材料和载体介质。 回流工艺用于将导电盖重新流到导电凸块中。

公开(公告)号：US08242011B2

公开(公告)日：2012-08-14

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层，所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US20120049269A1

公开(公告)日：2012-03-01

申请号：US13291374

申请日：2011-11-08

申请人： Ming-Da Cheng ,  Chin-Tsan Yeh ,  Tuung Luoh ,  Chin-Ta Su ,  Ta-Hung Yang ,  Kuang-Chao Chen

发明人： Ming-Da Cheng ,  Chin-Tsan Yeh ,  Tuung Luoh ,  Chin-Ta Su ,  Ta-Hung Yang ,  Kuang-Chao Chen

IPC分类号： H01L29/792 ,  H01L29/06

CPC分类号： H01L21/76229 ,  H01L21/76205

摘要： A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the dielectric material; (d) removing the dielectric material over the base by performing a chemical mechanical polishing (CMP) process until a part of the stop layer is exposed so as to form a dielectric layer in the recess; and (e) removing a part of the stop layer, wherein the another part of the stop layer and the dielectric layer filled in the recess constitute the isolation structure.

摘要翻译： 一种形成隔离结构的方法，包括：（a）提供具有凹部的基部; （b）在基座和凹槽中形成停止层; （c）在所述阻挡层上形成电介质材料，以允许所述凹部的其余部分填充所述电介质材料; （d）通过进行化学机械抛光（CMP）工艺在基底上去除电介质材料，直到一部分停止层被暴露以在凹槽中形成电介质层; 和（e）去除所述阻挡层的一部分，其中所述阻挡层的另一部分和填充在所述凹部中的所述电介质层构成所述隔离结构。