公开(公告)号：US08405199B2

公开(公告)日：2013-03-26

申请号：US12832231

申请日：2010-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在盖层的顶表面之上。

公开(公告)号：US08659155B2

公开(公告)日：2014-02-25

申请号：US12846353

申请日：2010-07-29

申请人： Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Ching-Wen Chen ,  Yi-Wen Wu ,  Chia-Tung Chang ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Ching-Wen Chen ,  Yi-Wen Wu ,  Chia-Tung Chang ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

摘要翻译： 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

公开(公告)号：US08884431B2

公开(公告)日：2014-11-11

申请号：US13228768

申请日：2011-09-09

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L23/498 ,  H01L21/56 ,  H01L25/065 ,  H01L23/538 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10 ,  H01L25/03 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06515 ,  H01L2224/09181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.

摘要翻译： 公开了用于半导体器件的封装方法和结构。 在一个实施例中，封装的半导体器件包括具有第一表面和与第一表面相对的第二表面的再分配层（RDL）。 至少一个集成电路耦合到RDL的第一表面，并且多个金属凸块耦合到RDL的第二表面。 模制化合物设置在RDL的至少一个集成电路和第一表面上。

公开(公告)号：US20130075921A1

公开(公告)日：2013-03-28

申请号：US13240629

申请日：2011-09-22

申请人： Meng-Tse Chen ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/486 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2924/12042 ,  H01L2924/15331 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method includes applying a polymer-comprising material over a carrier, and forming a via over the carrier. The via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material. A first redistribution line is formed on a first side of the polymer-comprising material. A second redistribution line is formed on a second side of the polymer-comprising material opposite to the first side. The first redistribution line is electrically coupled to the second redistribution line through the via.

摘要翻译： 一种方法包括在载体上涂覆含聚合物的材料，并在载体上形成通孔。 通孔位于含聚合物的材料的内部，并且基本上穿透包含聚合物的材料。 在包含聚合物的材料的第一面上形成第一再分配线。 第二再分配线形成在与第一侧相对的含聚合物材料的第二侧上。 第一再分配线通过通孔电耦合到第二再分配线。

公开(公告)号：US20120299181A1

公开(公告)日：2012-11-29

申请号：US13118108

申请日：2011-05-27

申请人： Meng-Tse Chen ,  Wei-Hung Lin ,  Sheng-Yu Wu ,  Chun-Cheng Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Wei-Hung Lin ,  Sheng-Yu Wu ,  Chun-Cheng Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/488 ,  H01L21/56

CPC分类号： H01L24/17 ,  H01L21/565 ,  H01L21/566 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/81 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16055 ,  H01L2224/16113 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1304 ,  H01L2924/14 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/00

摘要： A method of packaging includes placing a package component over a release film, wherein solder balls on a surface of the package component are in physical contact with the release film. Next, A molding compound filled between the release film and the package component is cured, wherein during the step of curing, the solder balls remain in physical contact with the release film.

摘要翻译： 包装方法包括将包装部件放置在脱模膜上，其中包装部件表面上的焊球与剥离膜物理接触。 接下来，填充在剥离膜和包装部件之间的模塑料固化，其中在固化步骤期间，焊球与剥离膜保持物理接触。

公开(公告)号：US09576830B2

公开(公告)日：2017-02-21

申请号：US13475790

申请日：2012-05-18

申请人： Hui-Min Huang ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/67288 ,  H01L21/6838

摘要： A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

摘要翻译： 一种用于调整晶片翘曲的方法，包括提供具有中心部分和边缘部分的晶片，并提供其上具有用于保持晶片的保持区域的保持台。 将晶片放置在保持台上，其中心部分高​​于边缘部分，然后按压到保持区域上，使得晶片通过自吸力被吸引并保持在保持台上。 根据晶片的翘曲量将晶片在预定温度下加热预定时间，以便实现基本上平坦的晶片或预定的晶片级。

公开(公告)号：US20130089952A1

公开(公告)日：2013-04-11

申请号：US13270890

申请日：2011-10-11

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Chung-Shi Liu

IPC分类号： H01L21/60 ,  H01L23/12 ,  H01L21/603

CPC分类号： H01L21/6835 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11444 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/14135 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75754 ,  H01L2224/7698 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83102 ,  H01L2224/9205 ,  H01L2224/92125 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/3841 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/05552 ,  H01L2924/013

摘要： Packaging process tools and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure including a frame. The frame includes a plurality of apertures adapted to retain a plurality of integrated circuit dies therein. The frame includes at least one hollow region.

摘要翻译： 公开了用于半导体器件的封装处理工具和封装方法。 在一个实施例中，用于半导体器件的封装处理工具包括包括框架的机械结构。 框架包括适于将多个集成电路管芯保持在其中的多个孔。 框架包括至少一个中空区域。

公开(公告)号：US10128206B2

公开(公告)日：2018-11-13

申请号：US12904506

申请日：2010-10-14

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Meng-Wei Chou ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Meng-Wei Chou ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/00

摘要： The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.

公开(公告)号：US09312214B2

公开(公告)日：2016-04-12

申请号：US13240629

申请日：2011-09-22

申请人： Meng-Tse Chen ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L21/50 ,  H01L21/56 ,  H01L21/48 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/486 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2924/12042 ,  H01L2924/15331 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method includes applying a polymer-comprising material over a carrier, and forming a via over the carrier. The via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material. A first redistribution line is formed on a first side of the polymer-comprising material. A second redistribution line is formed on a second side of the polymer-comprising material opposite to the first side. The first redistribution line is electrically coupled to the second redistribution line through the via.

摘要翻译： 一种方法包括在载体上涂覆含聚合物的材料，并在载体上形成通孔。 通孔位于含聚合物的材料的内部，并且基本上穿透包含聚合物的材料。 在包含聚合物的材料的第一面上形成第一再分配线。 第二再分配线形成在与第一侧相对的含聚合物材料的第二侧上。 第一再分配线通过通孔电耦合到第二再分配线。

公开(公告)号：US08809117B2

公开(公告)日：2014-08-19

申请号：US13270890

申请日：2011-10-11

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Chung-Shi Liu

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11444 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/14135 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75754 ,  H01L2224/7698 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83102 ,  H01L2224/9205 ,  H01L2224/92125 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/3841 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/05552 ,  H01L2924/013

摘要： Packaging process tools and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure including a frame. The frame includes a plurality of apertures adapted to retain a plurality of integrated circuit dies therein. The frame includes at least one hollow region.

摘要翻译： 公开了用于半导体器件的封装处理工具和封装方法。 在一个实施例中，用于半导体器件的封装处理工具包括包括框架的机械结构。 框架包括适于将多个集成电路管芯保持在其中的多个孔。 框架包括至少一个中空区域。