公开(公告)号：US08395260B2

公开(公告)日：2013-03-12

申请号：US13299559

申请日：2011-11-18

申请人： Hirohisa Matsuki ,  Jun Fukuda

发明人： Hirohisa Matsuki ,  Jun Fukuda

IPC分类号： H01L21/00

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L27/11502 ,  H01L28/57 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/1134 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48477 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/85051 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/15183 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

公开(公告)号：US20070284755A1

公开(公告)日：2007-12-13

申请号：US11595854

申请日：2006-11-13

申请人： Ryuji Nomoto ,  Hirohisa Matsuki

发明人： Ryuji Nomoto ,  Hirohisa Matsuki

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3171 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/73203 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/11

摘要： A semiconductor device, including a semiconductor substrate where a plurality of functional elements is formed; and a multilayer interconnection layer provided over the semiconductor substrate, the multilayer interconnection layer including a wiring layer mutually connecting the plural functional elements and including an interlayer insulation layer, wherein a region where the wiring layer is formed is surrounded by a groove forming part, the groove forming part piercing the multilayer interconnection layer; and the groove forming part is filled with an organic insulation material.

摘要翻译： 一种半导体器件，包括其中形成有多个功能元件的半导体衬底; 以及设置在所述半导体衬底上的多层布线层，所述多层布线层包括相互连接所述多个功能元件并且包括层间绝缘层的布线层，其中所述布线层形成的区域被沟槽形成部分包围， 沟槽形成部分刺穿多层互连层; 并且槽形成部分填充有机绝缘材料。

公开(公告)号：US20070099411A1

公开(公告)日：2007-05-03

申请号：US11361041

申请日：2006-02-24

申请人： Hiroyuki Matsui ,  Hirohisa Matsuki ,  Koki Otake

发明人： Hiroyuki Matsui ,  Hirohisa Matsuki ,  Koki Otake

IPC分类号： H01L21/44 ,  H01L21/00

CPC分类号： H01L24/11 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/3025

摘要： A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.

摘要翻译： 公开了一种回流装置，其中使用甲酸清洗处理对象上的焊料电极的表面。 回流装置包括处理室，用于向处理室供给含有甲酸的气氛气体的甲酸引入机构，以及由对甲酸具有耐腐蚀性的材料制成的屏蔽构件。 屏蔽部件配置在处理室的回流处理部和处理室的内壁之间。 代替或除了屏蔽构件之外，回流装置可以包括用于分解残余甲酸的加热器。

公开(公告)号：US06987054B2

公开(公告)日：2006-01-17

申请号：US10097817

申请日：2002-03-15

申请人： Norio Fukasawa ,  Hirohisa Matsuki ,  Kenichi Nagashige ,  Yuzo Hamanaka ,  Muneharu Morioka

发明人： Norio Fukasawa ,  Hirohisa Matsuki ,  Kenichi Nagashige ,  Yuzo Hamanaka ,  Muneharu Morioka

IPC分类号： H01L21/301

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L21/563 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L24/29 ,  H01L29/0657 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/04953 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10S438/92 ,  Y10S438/978 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

摘要翻译： 半导体器件在半导体芯片的主表面上具有树脂封装层，其上形成有多个凸起电极，其中半导体器件具有倒角表面或顶部边缘部分上的台阶表面，使得外部冲击或 施加到这种边缘部分的应力由台阶表面的倒角表面消散。

公开(公告)号：US06881611B1

公开(公告)日：2005-04-19

申请号：US09635124

申请日：2000-08-08

申请人： Norio Fukasawa ,  Toshimi Kawahara ,  Muneharu Morioka ,  Mitsunada Osawa ,  Yasuhiro Shinma ,  Hirohisa Matsuki ,  Masanori Onodera ,  Junichi Kasai ,  Shigeyuki Maruyama ,  Masao Sakuma ,  Yoshimi Suzuki ,  Masashi Takenaka

发明人： Norio Fukasawa ,  Toshimi Kawahara ,  Muneharu Morioka ,  Mitsunada Osawa ,  Yasuhiro Shinma ,  Hirohisa Matsuki ,  Masanori Onodera ,  Junichi Kasai ,  Shigeyuki Maruyama ,  Masao Sakuma ,  Yoshimi Suzuki ,  Masashi Takenaka

IPC分类号： B29C43/18 ,  H01L21/301 ,  H01L21/56 ,  H01L21/68 ,  H01L23/24 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L29/06 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/568 ,  B29C43/18 ,  B29C2043/3444 ,  B29C2043/3628 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/566 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49572 ,  H01L23/4985 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L29/0657 ,  H01L2221/68377 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/85001 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06579 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1005 ,  H01L2225/1064 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0134 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A method includes a resin sealing step of placing, in a cavity 28 of a mold 20, a substrate 16 to which semiconductor elements 11 on which bumps 12 are arranged, a resin sealing step of supplying resin 35 to positions of the bumps 12 so that a resin layer 13 sealing the bumps 12 is formed, a protruding electrode exposing step of exposing at least ends of the bumps 12 sealed by the resin layer 13 so that ends of the bumps 12 are exposed from the resin layer 13, and a separating step of cutting the substrate 16 together with the resin layer 13 so that the semiconductor elements 11 are separated from each other.

摘要翻译： 一种方法包括：树脂密封步骤，在模具20的空腔28中，将布置有凸块12的半导体元件11的基板16设置在树脂密封步骤中，将树脂35供应到凸块12的位置，使得 形成密封凸块12的树脂层13，使由树脂层13密封的凸块12的至少端部露出使突出部12的端部从树脂层13露出的突出电极曝光工序，以及分离工序 与树脂层13一起切割基板16，使得半导体元件11彼此分离。

公开(公告)号：US06734042B2

公开(公告)日：2004-05-11

申请号：US10207815

申请日：2002-07-31

申请人： Masamitsu Ikumo ,  Hirohisa Matsuki

发明人： Masamitsu Ikumo ,  Hirohisa Matsuki

IPC分类号： H01L2144

CPC分类号： H01L25/0657 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2924/00

摘要： A group of wires that bonds the first semiconductor chip and the second semiconductor chip together and extends on the first semiconductor chip is formed of a single plated film through plating in one continuous process. The second semiconductor chip is then bonded onto the first semiconductor chip to complete a semiconductor package.

摘要翻译： 将第一半导体芯片和第二半导体芯片结合在一起并在第一半导体芯片上延伸的一组电线通过一个连续工艺中的电镀由单个镀膜形成。 然后将第二半导体芯片接合到第一半导体芯片上以完成半导体封装。

公开(公告)号：US06680241B2

公开(公告)日：2004-01-20

申请号：US09735476

申请日：2000-12-14

申请人： Tadahiro Okamoto ,  Hirohisa Matsuki

发明人： Tadahiro Okamoto ,  Hirohisa Matsuki

IPC分类号： H01L21301

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/00

摘要： A plurality of chips divided from a semiconductor wafer having a plurality of semiconductor integrated circuits formed on a front surface of the wafer, are prepared, front surfaces of the chips being bonded to a first wafer sheet. The back and side surfaces of each chip bonded to the first wafer sheet are covered with a reinforcing thin film. Each of the plurality of chips is removed from the first wafer sheet. The flexural strength of a chip can be suppressed from being lowered by chipping and chip cracks.

摘要翻译： 制备从形成在晶片前表面上的具有多个半导体集成电路的半导体晶片分开的多个芯片，芯片的前表面被接合到第一晶片。 结合到第一晶片片的每个芯片的背面和侧表面被增强薄膜覆盖。 将多个芯片中的每一个从第一晶片片上移除。 可以抑制芯片的弯曲强度由于切屑和芯片裂纹而降低。

公开(公告)号：US08952538B2

公开(公告)日：2015-02-10

申请号：US12975961

申请日：2010-12-22

申请人： Hirohisa Matsuki

发明人： Hirohisa Matsuki

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/40 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1162 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/20101 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/2064 ,  H01L2924/00

摘要： A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.

摘要翻译： 一种半导体器件包括：具有电极焊盘的集成电路; 布置在所述集成电路上的第一绝缘层; 包括多个布线并设置在第一绝缘层上的再分配层，多个布线中的至少一个电连接到电极焊盘; 在所述多个布线的至少一部分上具有开口的第二绝缘层; 金属膜，设置在所述开口和所述第二绝缘层上，并且电耦合到所述多个布线中的至少一个布线; 以及焊料凸块，所述焊料凸块突出地覆盖所述多个布线中的至少一个未电耦合到所述金属膜的布线。

公开(公告)号：US20130015564A1

公开(公告)日：2013-01-17

申请号：US13494408

申请日：2012-06-12

申请人： Hirohisa Matsuki ,  Masao Sakuma

发明人： Hirohisa Matsuki ,  Masao Sakuma

IPC分类号： H01L23/552 ,  H01L21/60

CPC分类号： H01L23/552 ,  H01L21/561 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0557 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/167 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01L2224/81 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device (semiconductor module) includes a circuit board (module board) and a semiconductor element mounted on the circuit board. A shielding layer that blocks electromagnetic waves is disposed on the upper surface of the semiconductor element, and an antenna element is disposed over the shielding layer. The semiconductor element and the antenna element are electrically connected to each other by a connecting portion. This structure enables the semiconductor device to be reduced in size and to have both an electromagnetic-wave blocking function and an antenna function.

摘要翻译： 半导体器件（半导体模块）包括电路板（模块板）和安装在电路板上的半导体元件。 阻挡电磁波的屏蔽层设置在半导体元件的上表面上，天线元件设置在屏蔽层之上。 半导体元件和天线元件通过连接部分彼此电连接。 该结构能够使半导体器件的尺寸减小并具有电磁波阻挡功能和天线功能。

公开(公告)号：US20120187181A1

公开(公告)日：2012-07-26

申请号：US13436843

申请日：2012-03-31

申请人： Hiroyuki MATSUI ,  Hirohisa Matsuki ,  Koki Otake

发明人： Hiroyuki MATSUI ,  Hirohisa Matsuki ,  Koki Otake

IPC分类号： B23K31/02

CPC分类号： H01L24/11 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/3025

摘要： A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.

摘要翻译： 公开了一种回流装置，其中使用甲酸清洗处理对象上的焊料电极的表面。 回流装置包括处理室，用于向处理室供给含有甲酸的气氛气体的甲酸引入机构，以及由对甲酸具有耐腐蚀性的材料制成的屏蔽构件。 屏蔽部件配置在处理室的回流处理部和处理室的内壁之间。 代替或除了屏蔽构件之外，回流装置可以包括用于分解残余甲酸的加热器。