Surface modified TSV structure and methods thereof
    36.
    发明授权
    Surface modified TSV structure and methods thereof 有权
    表面改性TSV结构及其方法

    公开(公告)号:US09312175B2

    公开(公告)日:2016-04-12

    申请号:US13722365

    申请日:2012-12-20

    Abstract: Microelectronic elements and methods of their manufacture are disclosed. A microelectronic element may include a substrate including an opening extending through a semiconductor region of the substrate, a dielectric layer cover a wall of the opening within at least a first portion of the opening, a first metal disposed within the first portion of the opening, a second metal disposed within a second portion of the opening. The second metal may form at least part of a contact of the microelectronic element.

    Abstract translation: 公开了微电子元件及其制造方法。 微电子元件可以包括:衬底,其包括延伸穿过衬底的半导体区域的开口;电介质层覆盖开口的至少第一部分内的开口的壁;布置在开口的第一部分内的第一金属, 设置在开口的第二部分内的第二金属。 第二金属可以形成微电子元件的接触的至少一部分。

    CARRIER-LESS SILICON INTERPOSER
    39.
    发明申请
    CARRIER-LESS SILICON INTERPOSER 有权
    无载体硅介质

    公开(公告)号:US20140240938A1

    公开(公告)日:2014-08-28

    申请号:US13776035

    申请日:2013-02-25

    Abstract: An interposer can have conductive elements at a first side and terminals at a second side opposite therefrom, for connecting with a microelectronic element and a second component, respectively. The component can include a first element having a thermal expansion coefficient less than 10 ppm/° C., and an insulating second element, with a plurality of openings extending from the second side through the second element towards the first element. Conductive structure extending through the openings in the second element and through the first element electrically connects the terminals with the conductive elements.

    Abstract translation: 插入件可以在第一侧具有导电元件,并且在与其相对的第二侧具有端子,用于分别与微电子元件和第二元件连接。 该组件可以包括具有小于10ppm /℃的热膨胀系数的第一元件和绝缘的第二元件,其中多个开口从第二侧延伸穿过第二元件朝向第一元件。 延伸穿过第二元件中的开口并通过第一元件的导电结构将端子与导电元件电连接。

    METHODS AND STRUCTURE FOR CARRIER-LESS THIN WAFER HANDLING
    40.
    发明申请
    METHODS AND STRUCTURE FOR CARRIER-LESS THIN WAFER HANDLING 有权
    无载波干扰处理的方法和结构

    公开(公告)号:US20140179099A1

    公开(公告)日:2014-06-26

    申请号:US13724223

    申请日:2012-12-21

    Abstract: Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects.

    Abstract translation: 本文公开了形成微电子组件的方法以及所得到的结构和装置。 在一个实施例中,形成微电子组件的方法包括去除在衬底的表面的部分处暴露的材料,以形成经处理的衬底,该衬底具有多个由处理衬底的整体支撑部分分隔开的薄化部分,该部分的厚度大于厚度 减薄部分中的至少一些薄化部分包括在薄壁部分的厚度方向上延伸并在表面露出的多个导电互连件; 以及去除衬底的支撑部分以将衬底切割成多个单独的薄化部分,至少一些单独的变薄部分,包括互连。

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