公开(公告)号：US09394615B2

公开(公告)日：2016-07-19

申请号：US13687512

申请日：2012-11-28

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Ren-Guan Duan ,  Hamid Noorbakhsh ,  Junhan Yuh ,  Dmitry Lubomirsky

IPC: C23F1/08 ,  B05D3/00 ,  B23K10/00 ,  H05K1/05 ,  H01J37/32 ,  C04B41/87 ,  C04B5/00 ,  C04B7/32 ,  C04B18/02 ,  C04B28/06 ,  C04B35/44 ,  C22C32/00 ,  C22C29/12 ,  B32B18/00 ,  C04B41/50 ,  C04B41/00

CPC classification number: C23F1/08 ,  B05D3/002 ,  B23K10/00 ,  B32B18/00 ,  C04B5/00 ,  C04B7/32 ,  C04B18/023 ,  C04B28/06 ,  C04B35/44 ,  C04B41/009 ,  C04B41/50 ,  C04B41/5045 ,  C04B41/87 ,  C22C29/12 ,  C22C32/00 ,  C22C32/0015 ,  C22C32/0021 ,  C22C32/0026 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32495 ,  H05K1/053

Abstract: To manufacture a ceramic coated article, at least one surface of a conductive article is roughened to a roughness of approximately 100 micro-inches (μin) to approximately 300 μin. The conductive article may then be heated and coated with a ceramic coating comprising a yttrium containing oxide to a thickness of approximately 10-40 mil.

Abstract translation: 为了制造陶瓷涂层制品，将导电制品的至少一个表面粗糙化至约100微英寸（μin）至约300μin的粗糙度。 然后可以将导电制品加热并用包含含钇的氧化物的陶瓷涂层涂覆至约10-40密耳的厚度。

公开(公告)号：US20160145743A1

公开(公告)日：2016-05-26

申请号：US14947594

申请日：2015-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： MUHAMMAD M. RASHEED ,  Dmitry Lubomirsky

IPC: C23C16/455 ,  H01L21/285 ,  H01J37/32 ,  H01L21/02 ,  C04B35/581 ,  C04B40/00

CPC classification number: C23C16/45591 ,  C04B35/581 ,  C04B40/0092 ,  C23C16/4404 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556

Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

Abstract translation: 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。 在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

公开(公告)号：US09299537B2

公开(公告)日：2016-03-29

申请号：US14221132

申请日：2014-03-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

公开(公告)号：US20150332930A1

公开(公告)日：2015-11-19

申请号：US14808904

申请日：2015-07-24

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/268 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20150311043A1

公开(公告)日：2015-10-29

申请号：US14696085

申请日：2015-04-24

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja P. Kanungo ,  Dmitry Lubomirsky ,  Sung Je Kim

IPC: H01J37/32 ,  C23C14/22 ,  C23C14/46 ,  C23C4/12

CPC classification number: C23C14/46 ,  C23C4/11 ,  C23C4/18 ,  C23C14/0694 ,  C23C14/221 ,  C23C28/042 ,  C23C28/044 ,  H01J37/32458 ,  H01J37/32477 ,  H01J37/32495

Abstract: A chamber component comprises a body and a fluorinated thin film protective layer over at least one surface of the body. The fluorinated thin film protective layer does not react with process gasses having Fluorine based chemistry. The fluorinated thin film protective layer may be a YF3 layer.

Abstract translation: 腔室部件包括在主体的至少一个表面上的主体和氟化薄膜保护层。 氟化薄膜保护层不会与具有氟基化学的工艺气体反应。 氟化薄膜保护层可以是YF3层。

公开(公告)号：US09153442B2

公开(公告)日：2015-10-06

申请号：US14248143

申请日：2014-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/263 ,  H01L21/67 ,  H01L21/02 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09132436B2

公开(公告)日：2015-09-15

申请号：US13799840

申请日：2013-03-13

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  B05B1/00 ,  C23C16/452 ,  H01J37/32 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。 上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。 上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。

公开(公告)号：US09093371B2

公开(公告)日：2015-07-28

申请号：US14246978

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: B08B3/12 ,  B08B6/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/263 ,  H01L21/02 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09090046B2

公开(公告)日：2015-07-28

申请号：US13747292

申请日：2013-01-22

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Ren-Guan Duan ,  Sumit Agarwal ,  Dmitry Lubomirsky

IPC: B32B18/00 ,  C04B41/50 ,  C04B41/87 ,  C04B41/00 ,  C04B41/45

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/62222 ,  C04B35/62665 ,  C04B35/62675 ,  C04B41/009 ,  C04B41/4545 ,  C04B41/5045 ,  C04B41/87 ,  C23C4/134 ,  Y10T428/24562 ,  C04B35/00 ,  C04B35/10 ,  C04B41/4527 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/53

Abstract: To manufacture a ceramic article, a ceramic body comprising Al2O3 is roughened to a roughness of approximately 140 micro-inches (μin) to 240 μin. The ceramic body is subsequently cleaned and then coated with a ceramic coating. The ceramic coating comprises a compound of Y4Al2O9 (YAM) and a solid solution of Y2-xZrxO3. The ceramic coating is then polished.

Abstract translation: 为了制造陶瓷制品，将包含Al 2 O 3的陶瓷体粗糙化至约140微英寸（μin）至240μin的粗糙度。 随后清洁陶瓷体，然后用陶瓷涂层涂覆。 陶瓷涂层包含Y4Al2O9（YAM）的化合物和Y2-xZrxO3的固溶体。 然后抛光陶瓷涂层。

公开(公告)号：US20150060265A1

公开(公告)日：2015-03-05

申请号：US14468066

申请日：2014-08-25

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

Abstract translation: 本技术的实施例可以包括处理半导体衬底的方法。 该方法可以包括在处理区域中提供半导体衬底。 另外，该方法可以包括使气体流过由动力电极限定的空腔。 该方法可以进一步包括向被动电极施加负电压。 此外，该方法可以包括在空腔中冲击空心阴极放电以从气体形成空心阴极排出流出物。 然后可以通过由电接地电极限定的多个孔将空心阴极排出流出物流动到处理区域。 该方法可以包括使空心阴极排出流体与处理区域中的半导体衬底反应。