Abstract:
A physically secure processing assembly is provided that includes dies mounted on a substrate so as to sandwich the electrical contacts of the dies between the dies and the substrate. The substrate is provided with substrate contacts and conductive pathways that are electrically coupled to the die contacts and extend through the substrate. Electrical conductors surround the conductive pathways. A monitoring circuit detects a break in continuity of one or more of the electrical conductors, and preferably renders the assembly inoperable. Preferably, an epoxy encapsulation is provided to prevent probing tools from being able to reach the die or substrate contacts.
Abstract:
An imaging system for use in a digital camera or cell phone utilizes one chip for logic and one chip for image processing. The chips are interconnected using around-the-edge or through via conductors extending from bond pads on the active surface of the imaging chip to backside metallurgy on the imaging chip. The backside metallurgy of the imaging chip is connected to metallurgy on the active surface of the logic chip using an array of solder bumps in BGA fashion. The interconnection arrangement provides a CSP which matches the space constraints of a cell phone, for example. The arrangement also utilizes minimal wire lengths for reduced noise. Connection of the CSP to a carrier package may be either by conductive through vias or wire bonding. The CSP is such that the imaging chip may readily be mounted across an aperture in the wall of a cell phone, for example, so as to expose the light sensitive pixels on the active surface of said imaging chip to light.
Abstract:
A method for the removal of residual UV radiation-sensitive adhesive from the surfaces of semiconductor wafers, remaining thereon from protective UV radiation-sensitive tapes which were stripped from the semiconductor wafers. Moreover, provided is an arrangement for implementing the removal of residual sensitive adhesive, which remain from tapes employed as protective layers on semiconductor wafers, particularly wafers having surfaces including C4 connections.
Abstract:
A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.
Abstract:
A low impedance power distribution structure and method for substrate packaging of semiconductor chips containing very large scale integrated circuit (VLSI) circuits, such as microprocessors and associated memory, is presented. The power distribution structure incorporates under bump metallurgy (UBM) solder bump forming technology to produce not only solder bump connections that are vertically oriented, but also low impedance distribution wires that are horizontally oriented, and which provide electrical interconnection between various selected electrical contact points, such as solder bumps. These low impedance distribution wires introduce the benefits of low characteristic impedance to the substrate's power distribution structure.
Abstract:
An apparatus used for holding a first semiconductor device in proper alignment to a second semiconductor device, whose size is different from the first device, while performing a C4 bond between the two devices. The apparatus for holding the two devices in proper alignment consists of a holding fixture, which includes upper and lower pocket receptacles for receiving the semiconductor devices. The semiconductor devices are placed into the respective upper and lower slots aligned to two or more edges of the holding fixture.
Abstract:
A voltage regulator module (VRM) includes a first interface configured to couple to a first substrate interface at a first voltage. The VRM also includes a second interface configured to couple to a first processor interface at a second voltage. A first regulator module couples to the first interface and to the second interface. The first regulator module is configured to receive power at the first interface, to convert power to the second voltage, and to deliver power to the first processor interface at the second voltage. A method for providing power to a processor includes receiving power from a first substrate interface at a first voltage. The received power is regulated to generate power at a second voltage. The regulated power is provided to a processor at a first processor interface coupled to the processor. The processor interface delivers power to a logic group of a plurality of logic groups of the processor.
Abstract:
A back of a dielectric transparent handle substrate is coated with a blanket conductive film or a mesh of conductive wires. A semiconductor substrate is attached to the transparent handle substrate employing an adhesive layer. The semiconductor substrate is thinned in the bonded structure to form a stack of the transparent handle substrate and the semiconductor interposer. The thinned bonded structure may be loaded into a processing chamber and electrostatically chucked employing the blanket conductive film or the mesh of conductive wires. The semiconductor interposer may be bonded to a semiconductor chip or a packaging substrate employing C4 bonding or intermetallic alloy bonding. Illumination of ultraviolet radiation to the adhesive layer is enabled, for example, by removal of the blanket conductive film or through the mesh so that the transparent handle substrate may be detached. The semiconductor interposer may then be bonded to a packaging substrate or a semiconductor chip.
Abstract:
A capacitor in a semiconductor substrate employs a conductive through-substrate via (TSV) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSV's can be provided in the semiconductor substrate to provide electrical connection for power supplies and signal transmission therethrough. The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips.
Abstract:
Methods for bonding substrate surfaces, bonded substrate assemblies, and design structures for a bonded substrate assembly. Device structures of a product chip are formed using a first surface of a device substrate. A wiring layer of an interconnect structure for the device structures is formed on the product chip. The wiring layer is planarized. A temporary handle wafer is removably bonded to the planarized wiring layer. In response to removably bonding the temporary handle wafer to the planarized first wiring layer, a second surface of the device substrate, which is opposite to the first surface, is bonded to a final handle substrate. The temporary handle wafer is then removed from the assembly.