公开(公告)号：US09142532B2

公开(公告)日：2015-09-22

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  B23K31/02 ,  B23K37/00 ,  B23K37/04 ,  H01L21/66 ,  H01L25/10 ,  H01L23/10 ,  H01L21/683

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。

公开(公告)号：US09870922B2

公开(公告)日：2018-01-16

申请号：US15306303

申请日：2015-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

公开(公告)号：US11837444B2

公开(公告)日：2023-12-05

申请号：US16347590

申请日：2017-11-06

申请人： BONDTECH CO., LTD. ,  Tadatomo Suga

发明人： Akira Yamauchi ,  Tadatomo Suga

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32816 ,  H01J2237/201 ,  H01J2237/338 ,  H01J2237/3341

摘要： The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US10204785B2

公开(公告)日：2019-02-12

申请号：US15810932

申请日：2017-11-13

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32 ,  H01L21/67 ,  H01L25/065 ,  H01L21/762

摘要： A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

公开(公告)号：US20150048523A1

公开(公告)日：2015-02-19

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L25/065 ,  B23K31/02 ,  H01L21/66 ,  H01L23/00 ,  H01L25/00 ,  H01L25/10 ,  B23K37/04 ,  B23K37/00

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。

公开(公告)号：US09601350B2

公开(公告)日：2017-03-21

申请号：US13982697

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： H01L21/322 ,  B23K1/20 ,  B23K20/24 ,  H01L21/67 ,  H01L21/762 ,  H01L21/302 ,  H01L21/02 ,  H01L21/263 ,  H01L29/04 ,  H01L29/36 ,  H01L21/20 ,  H01J37/317

CPC分类号： H01L21/3221 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  H01J37/317 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/263 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L29/04 ,  H01L29/36

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US20140037945A1

公开(公告)日：2014-02-06

申请号：US13982686

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： B32B38/08 ,  B32B7/04

CPC分类号： B32B38/08 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  B32B7/04 ,  H01J37/317 ,  H01J2237/08 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L23/147 ,  H01L23/5252 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/31678 ,  H01L2924/00

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

摘要翻译： [问题]提供具有广泛应用的基板接合技术。 [解决方案]在接合表面上形成硅薄膜，并且使用高能粒子/金属颗粒对与基板的界面进行表面处理。

公开(公告)号：US07686912B2

公开(公告)日：2010-03-30

申请号：US10928851

申请日：2004-08-27

申请人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

IPC分类号： B32B38/04

CPC分类号： H01J37/321 ,  B32B38/0008 ,  B32B2310/08 ,  B32B2310/14 ,  B32B2457/14 ,  H01L21/187

摘要： A substrate bonding method for mutually bonding substrates, has a first radiation step for irradiating the surfaces of the individual substrates with an oxygen particle beam, a second radiation step for irradiating the surfaces of the individual substrate with a nitrogen particle beam simultaneously with or subsequently to the first radiation step, and a step for stacking the individual substrates and bringing the surfaces thereof into close contact. Particularly, the substrates which have been irradiated first with an oxygen plasma and subsequently with a nitrogen plasma are stacked and bonded.

摘要翻译： 用于相互接合基板的基板接合方法具有用氧粒子束照射各个基板的表面的第一辐射步骤，用于将氮化物颗粒束的表面与氮颗粒束的表面同时或随后地照射的第二辐射步骤 第一辐射步骤和用于堆叠各个基板并使其表面紧密接触的步骤。 特别地，首先用氧等离子体并随后用氮等离子体照射的基板被层叠并结合。

公开(公告)号：US07319339B2

公开(公告)日：2008-01-15

申请号：US11759816

申请日：2007-06-07

申请人： Shinji Iino ,  Kiyoshi Takekoshi ,  Tadatomo Suga ,  Toshihiro Itoh ,  Kenichi Kataoka

发明人： Shinji Iino ,  Kiyoshi Takekoshi ,  Tadatomo Suga ,  Toshihiro Itoh ,  Kenichi Kataoka

IPC分类号： G01R31/02

CPC分类号： G01R31/2891 ,  G01R1/067 ,  G01R1/06794 ,  G01R3/00 ,  G01R31/2886

摘要： Disclosed is an inspection method for inspecting the electrical characteristics of a device by bringing an inspecting probe into electrical contact with an inspection electrode. An insulating film formed on the surface of the inspection electrode is broken by utilizing a fritting phenomenon so as to bring the inspection electrode into electrical contact with the inspection electrode.

摘要翻译： 公开了一种通过使检查探针与检查电极电接触来检查装置的电气特性的检查方法。 通过利用烧结现象使形成在检查电极表面上的绝缘膜破裂，从而使检查电极与检查电极电接触。

公开(公告)号：US20070128825A1

公开(公告)日：2007-06-07

申请号：US11293663

申请日：2005-12-02

申请人： Tadatomo Suga ,  Mohammad Howlader ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Mohammad Howlader ,  Tomoyuki Abe

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  H01L24/27 ,  H01L24/30 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701

摘要： A method for bonding of substrates has a steps of irradiating surfaces of the substrates respectively in a vacuum with both an inert gas beam and a metal beam thereby forming island shaped thin metal films on the surfaces of the substrates, and surface-activated bonding of the substrates through the island shaped thin metal films by contacting the surfaces of the substrates each other.

摘要翻译： 基板的接合方法具有分别在惰性气体束和金属梁两者的真空中照射基板的表面的步骤，从而在基板的表面上形成岛状薄金属膜，并且将表面激活的 通过使基板的表面彼此接触而穿过岛状薄金属膜的基板。