公开(公告)号：US20240363311A1

公开(公告)日：2024-10-31

申请号：US18767915

申请日：2024-07-09

申请人： Lam Research Corporation

发明人： Weiyi LUO ,  Youn Gi HONG ,  WeiWu ZHONG ,  Himanshu CHOKSHI

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： H01J37/32183 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

摘要： A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

公开(公告)号：US20240360561A1

公开(公告)日：2024-10-31

申请号：US18765688

申请日：2024-07-08

申请人： Applied Materials, Inc.

发明人： Zohreh Razavi Hesabi ,  Cong Trinh ,  Kevin Griffin ,  Alexander V. Garachtchenko ,  Kenric Choi ,  Vipin Jose ,  Saloni Sawalkar ,  Maribel Maldonado-Garcia ,  Kendrick H. Chaney

IPC分类号： C23C16/52 ,  C23C16/455 ,  G01F23/00 ,  G05D9/12 ,  H01L21/66 ,  H01L21/67

CPC分类号： C23C16/52 ,  C23C16/45544 ,  G01F23/0007 ,  G05D9/12 ,  H01L21/67253 ,  H01L22/10

摘要： An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

公开(公告)号：US20240360560A1

公开(公告)日：2024-10-31

申请号：US18140295

申请日：2023-04-27

申请人： Applied Materials, Inc.

发明人： Kalaivanan MOHANADASS ,  Shu-Kwan LAU ,  Daniel COSCHIGANO ,  Jayanth Devaraja Swamy

IPC分类号： C23C16/52 ,  C23C16/46 ,  G01S17/08

CPC分类号： C23C16/52 ,  C23C16/46 ,  G01S17/08

摘要： An alignment assembly includes a sensor and a lid that includes a first window. The alignment assembly also includes a rotary joint coupled to the lid. The alignment assembly also includes a jig coupled to the rotary joint and pivotable relative to the lid about the rotary joint. The jig includes an extendable arm that is moveable from a retracted position where the sensor is disposed in a first position above the first window to an extended position where the sensor is disposed at a second position above the first window. The alignment assembly also includes a lock configured to selectively pivotably lock the jig to the lid and also to selectively lock the extendable arm in the retracted position or the extended position.

公开(公告)号：US20240355593A1

公开(公告)日：2024-10-24

申请号：US18136276

申请日：2023-04-18

申请人： Tokyo Electron Limited

发明人： Melvin Verbaas ,  Einosuke Tsuda

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01L21/683

CPC分类号： H01J37/32715 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32568 ,  H01L21/6833 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/2007

摘要： An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.

公开(公告)号：US12123090B2

公开(公告)日：2024-10-22

申请号：US18368285

申请日：2023-09-14

申请人： Applied Materials, Inc.

发明人： Patrick Tae ,  Yaoling Pan ,  Leonard M Tedeschi

IPC分类号： C23C14/52 ,  C23C14/54 ,  C23C16/52 ,  G01N27/22 ,  H01J37/32

CPC分类号： C23C14/52 ,  C23C14/545 ,  C23C16/52 ,  G01N27/22 ,  H01J37/32935

摘要： Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

公开(公告)号：US20240339318A1

公开(公告)日：2024-10-10

申请号：US18595374

申请日：2024-03-04

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Theresa Kramer GUARINI ,  Johanes F. SWENBERG

IPC分类号： H01L21/02 ,  C23C8/16 ,  C23C8/36 ,  C23C8/80 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  C23C28/04

CPC分类号： H01L21/02332 ,  C23C8/16 ,  C23C8/36 ,  C23C8/80 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  C23C28/042 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/0234

摘要： A method of forming a semiconductor structure includes performing a first deposition process to deposit a first high-K dielectric layer on a surface of a substrate, performing an interface formation process to form an interfacial layer on the surface of the substrate, performing a second deposition process to deposit a second high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the first high-K dielectric layer and the second high-K dielectric layer, and performing an anneal process to passivate chemical bonds in the first high-K dielectric layer and the second high-K dielectric layer.

公开(公告)号：US12104253B2

公开(公告)日：2024-10-01

申请号：US18208084

申请日：2023-06-09

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Elaina Babayan ,  Sarah White ,  Vijay Venugopal ,  Jonathan Bakke

IPC分类号： C23C16/52 ,  C23C16/448 ,  C23C16/455 ,  G01F1/00 ,  G05D11/00 ,  G05D11/13 ,  G05D16/00 ,  G05D16/04 ,  H01L21/00 ,  H01L21/66 ,  H01L21/67

CPC分类号： C23C16/52 ,  C23C16/448 ,  C23C16/45544 ,  C23C16/45553 ,  G01F1/00 ,  G05D11/00 ,  G05D11/132 ,  G05D16/00 ,  G05D16/04 ,  G05D16/0402 ,  H01L21/00 ,  H01L21/67253 ,  H01L22/00

摘要： An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

公开(公告)号：US20240312810A1

公开(公告)日：2024-09-19

申请号：US18603366

申请日：2024-03-13

申请人： ASM IP Holding B.V.

发明人： Mun Peow Wong

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/6719 ,  C23C16/45565 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67248

摘要： Enclosure constructions comprise a housing configured to enclose an upper chamber of reactors, associated showerheads, and material source or gas lines of a semiconductor fabrication assembly. A heating element and fan impeller are inside the housing. A motor is disposed outside of the housing and is operatively coupled to the fan impeller. A controller is used to operate one or both of the heating element and the motor to produce heated air that is distributed within the housing. The heated air distributed in the housing has a uniform temperature, minimizes or eliminates the number of heat zones in the assembly, and heats the material source lines to eliminate the need for heating jackets, associated controllers, and associated insulation. The enclosure construction reduces the complexity and spatial packing density of the assembly to facilitate assembly, installation, and maintenance of the assembly, and improves the operating thermal efficiency of the assembly.

公开(公告)号：US20240309507A1

公开(公告)日：2024-09-19

申请号：US18612809

申请日：2024-03-21

申请人： Lam Research Corporation

发明人： Fayaz Shaikh ,  Nick Linebarger ,  Curtis Bailey

IPC分类号： C23C16/455 ,  C23C16/04 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/45574 ,  C23C16/04 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45597 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/68735 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/67161

摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.

公开(公告)号：US20240304430A1

公开(公告)日：2024-09-12

申请号：US18666251

申请日：2024-05-16

申请人： Applied Materials, Inc.

发明人： Mehdi Vaez-Iravani ,  Todd J. Egan ,  Kyle Ross Tantiwong

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/54 ,  C23C16/44 ,  C23C16/52 ,  G01N21/01 ,  H01J37/34

CPC分类号： H01J37/32972 ,  C23C14/34 ,  C23C14/54 ,  C23C16/4401 ,  C23C16/52 ,  G01N21/01 ,  H01J37/32477 ,  H01J37/3476 ,  H01J2237/3321

摘要： Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.