Abstract:
The invention relates to a first integrated electronic component for an integrated electronic apparatus. The first integrated electronic component (100) comprises a male body (102) with a protrusion element (103). The protrusion element (103) comprises a protrusion connection section (104). The protrusion element (103) protrudes from the male body (102) in such a way that the protrusion connection section (104) is adapted for being mechanically connectable to a corresponding connection recess (202) of a female electrical conductive body (201) of the second integrated electronic component (200).
Abstract:
An electronic system (68) is described comprising a semiconductor package (10) mounted to a system substrate (70). The method for fabricating the package (10) includes the steps of: attaching a discrete component (12) to a substrate (16), placing a die attach polymer (22) on the discrete component (12) and the substrate (16), pressing the die (14) into the die attach polymer (22) to encapsulate the discrete component (12) in a recess (20) and attaching the die (14) to the substrate (16), and then placing the die (14) in electrical communication with the discrete component (12). The semiconductor die (14) on the substrate (16) is in electrical communication with the contacts (38). The die (14) includes the recess (20), and the discrete component (12) is contained in the recess (20) encapsulated in the die attach polymer (22).
Abstract:
The invention relates to a method of aligning semiconductor devices in die stacking and a semiconductor structure fabricated by the method. In stacking a die on a wafer, for example, a first semiconductor device on the wafer and a second semiconductor device on the die are aligned by a magnetic force between at least a first magnetic body belonging to the wafer and at least a second magnetic body belonging to the die. After the alignment, the die is made not to move by the magnetic force between the magnetic bodies to maintain the alignment which is necessary for the fabrication of a semiconductor structure.
Abstract:
A semiconductor device 40 including a vertical assembly of semiconductor chips 401, 402 interconnected on a substrate with one or more metal standoffs 41 providing a fixed space between each supporting chip 401 and a next successive vertically stacked chip 402 is described. The device is fabricated by patterning islands of aluminum atop the passivation layer of each supporting chip simultaneously with processing to form bond pad caps. The fabrication process requires no additional cost, and has the advantage of providing standoffs for a plurality of chips by processing in wafer form, thereby avoiding additional assembly costs. Further, the standoffs provide improved thermal dissipation for the device and a uniform, stable bonding surface for wire bonding each of the chips to the substrate.
Abstract:
Zur einfacheren und sichereren Verkapselung von Bauelementen wird vorgeschlagen, die Verbindung zwischen einem Chip und einem Trägersubstrat mittels Bumpverbindungen zu erzeugen, die in Ausnehmungen auf dem Trägersubstrat versenkt sind. Das Bauelement liegt dabei direkt auf dem Trägersubstrat auf, insbesondere auf einem die Bauelementstrukturen auf dem Chip umgrenzenden Rahmen.
Abstract:
A thyristor type semiconductor device which prevents electrode terminals (13, 14) from being provided on a silicon substrate (20) in contact with it by their large inclination even with a conventional manufacturing apparatus, and in contact with the silicon substrate (20) even when warped or wavy, and the method for manufacturing the semiconductor device. This semiconductor device is provided with supporters (11a, 11b) from a glass material on both faces of the silicon substrate (20). At this time, the supporter (11b) is arranged in the boundary between a second N-type layer (18) and a second P-type layer (19) at the at the part opposite to a peripheral side face (22).
Abstract:
An encapsulated semiconductor device wherein a semiconductor chip is mounted on a semiconductor chip mounting substrate with an adhesive having a curing start temperature of exothermic reaction of 130 DEG C or less measured by means of a differential scanning calorimeter on the assumption that the temperature rise rate is 10 DEG C/min. A method for manufacturing the same is also disclosed.
Abstract:
An assembly component (100) and a technique for assembling a chip package using the assembly component are described. This chip package includes a set of semiconductor dies (310-1 - 310-N) that are arranged in a stack in a vertical direction, which are offset from each other in a horizontal direction to define a stepped terrace (112-1) at one side of the vertical stack. Moreover, the chip package may be assembled using the assembly component (100). In particular, the assembly component may include a pair of stepped terraces (112-1,112-2) that approximately mirror the stepped terrace of the chip package and which provide vertical position references for an assembly tool that positions the set of semiconductor dies in the vertical stack during assembly of the chip package.