Abstract:
A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.
Abstract:
Electronic devices and methods for fabricating electronic devices are described. One method includes providing a plurality of first metal bumps on a first surface, and a plurality of second metal bumps on a second surface, wherein at least one of (i) the plurality of first metal bumps, and (ii) the plurality of second metal bumps, comprises a solder. The method also includes forming a metal region including indium and tin, on at least one of (i) the plurality of first metal bumps, and (ii) the plurality of second metal bumps. The method also includes positioning the first metal bumps on the second metal bumps, and heating the metal bumps and the metal region and melting the solder. Other embodiments are described and claimed.
Abstract:
A semiconductor device includes a semiconductor chip which has a top surface, a conductive member which includes a first portion which is located on the electrode pad and a second portion which is extended from the first portion, and a sealing resin which seals the top surface of the semiconductor chip and the conductive member. A top surface of the second portion is exposed from the sealing resin and a part of the top surface of the second portion is concaved from a surface of the sealing resin. An external electrode is formed on the top surface of the second portion.
Abstract:
An apparatus for use with multiple chips having multiple posts as to engage at least a portion of a surface of one of the multiple chips, a frame configured to releasably constrain each of the posts so that, when unconstrained, each individual post can contact an individual chip and, when constrained, will allow a uniform vertical force to be applied to the chips.
Abstract:
A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.
Abstract:
One inventive aspect is related to a method of bonding two elements. The method comprises producing on a first element a first micropattern, comprising a first metal layer. The method further comprises producing on a second element a second micropattern, comprising a second metal layer. The method further comprises applying onto the first micropattern and/or on the second micropattern a layer of solder material. The method further comprises producing on at least one of the elements a patterned non-conductive adhesive layer around the micropattern on the element. The method further comprises joining the first micropattern and the second micropattern by means of a thermocompression or reflow method, wherein the producing of an adhesive layer is performed before the joining such that the first and second elements are secured to each other by the adhesive layer(s) after joining.
Abstract:
A method of creating a semiconductor chip having a substrate, a doped semiconductor material abutting the substrate and a device pad at an outer side of the doped semiconductor material involves creating a via through at least a portion of the substrate, the via having a periphery and a bottom at a location and depth sufficient to bring the via into proximity with the device pad but be physically spaced apart from the device pad, introducing an electrically conductive material into the via, and connecting the electrically conductive material to a signal source so the signal will deliberately be propagated from the electrically conductive material to the device pad without any direct electrical connection existing between the electrically conductive material and the device pad.
Abstract:
A chip contact functionally having an IC pad, a barrier layer over the IC pad, and a malleable material over the barrier layer. An alternative chip contact functionally having an IC pad, a barrier layer over the IC pad, and a rigid material over the barrier layer.
Abstract:
An electrical connection between two chips includes an IC pad on a first chip, an IC pad on a second chip, a first barrier metal over the IC pad of the first chip, a second barrier metal over the IC pad of the second chip, a malleable electrically conductive metal, different from the barrier metals, trapped between the first barrier metal and the second barrier metal, the first barrier metal, the malleable conductive metal and the second barrier metal forming a complete electrically conductive path between the IC pad of the first chip and the IC pad of the second chip.
Abstract:
A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.