Patent search ap:"KYOCERA SLD Laser Page Inc"

101.

发明授权
Laser lighting having selective resolution 有权

公开(公告)号：US11800077B2

公开(公告)日：2023-10-24

申请号：US17506412

申请日：2021-10-20

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Vlad Joseph Novotny , Paul Rudy

IPC: H04N9/77 , G02B27/01 , G02B26/10 , H04N9/31 , F21K9/64

CPC classification number: H04N9/77 , F21K9/64 , G02B26/101 , G02B26/105 , G02B27/0101 , H04N9/312 , H04N9/3129 , H04N9/3135 , H04N9/3144 , H04N9/3188 , G02B2027/0112

Abstract: In an example, the present invention provides an optical engine apparatus. The apparatus has a laser diode device, the laser diode device characterized by a wavelength ranging from 300 to 2000 nm or any variations thereof. In an example, the apparatus has a lens coupled to an output of the laser diode device and a scanning mirror device operably coupled to the laser diode device. In an example, the apparatus has an un-patterned phosphor plate coupled to the scanning mirror and configured with the laser device; and a spatial image formed on a portion of the un-patterned phosphor plate configured by a modulation of the laser and movement of the scanning mirror device.

102.

发明授权
Method and system for providing directional light sources with broad spectrum 有权

公开(公告)号：US11791606B1

公开(公告)日：2023-10-17

申请号：US17141788

申请日：2021-01-05

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring , Mathew C. Schmidt , Yu-Chia Chang

IPC: H01S5/042 , B82Y20/00 , H01L33/00 , H01S5/343 , H01S5/34 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/40 , H01L33/06 , H01S5/32

CPC classification number: H01S5/0427 , B82Y20/00 , H01L33/0045 , H01S5/0651 , H01S5/2031 , H01S5/22 , H01S5/34 , H01S5/3407 , H01S5/34333 , H01L33/06 , H01S5/0652 , H01S5/32025 , H01S5/320275 , H01S5/3414 , H01S5/405 , H01S5/4087 , H01S2301/02

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

103.

发明授权
Facet on a gallium and nitrogen containing laser diode 有权

公开(公告)号：US11742631B1

公开(公告)日：2023-08-29

申请号：US17476776

申请日：2021-09-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring , Hua Huang , Phillip Skahan , Sang-Ho Oh , Ben Yonkee , Alexander Sztein , Qiyuan Wei

IPC: H01S5/028 , H01S5/02 , H01S5/042 , H01S5/343 , H01S5/32 , H01S5/20 , H01S5/22

CPC classification number: H01S5/0287 , H01S5/0203 , H01S5/0282 , H01S5/0425 , H01S5/34333 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S2304/04

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

104.

发明授权
Strained and strain control regions in optical devices 有权

公开(公告)号：US11715931B1

公开(公告)日：2023-08-01

申请号：US17495378

申请日：2021-10-06

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring , Christiane Poblenz Elsass

IPC: H01L21/00 , H01S5/34 , H01S5/22 , H01S5/32 , H01S5/30 , H01L33/32 , H01L33/06 , H01L33/12 , H01L21/02 , H01S5/20 , H01L33/16 , H01S5/343 , H01L33/00 , H01S5/10

CPC classification number: H01S5/3403 , H01L21/0254 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/1082 , H01S5/2018 , H01S5/2031 , H01S5/2201 , H01S5/3063 , H01S5/3201 , H01S5/3202 , H01S5/3213 , H01S5/3406 , H01S5/34333 , H01S5/34346 , H01L21/0262 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01S5/2009 , H01S5/320275

Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

105.

发明授权
Manufacturable laser diodes on a large area gallium and nitrogen containing substrate 有权

公开(公告)号：US11715927B2

公开(公告)日：2023-08-01

申请号：US17552261

申请日：2021-12-15

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin , James W. Raring

IPC: H01S5/02 , H01S5/343

CPC classification number: H01S5/0217 , H01S5/0203 , H01S5/34333 , H01S2304/12

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

106.

发明公开
LASER-BASED INTEGRATED LIGHT SOURCE 审中-公开

公开(公告)号：US20230238767A1

公开(公告)日：2023-07-27

申请号：US18129615

申请日：2023-03-31

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Sten Heikman , Terry Towe , Sudeep Khanal

IPC: H01S5/00 , H01S5/32 , H01S5/22 , H01S5/343 , H01S5/02224 , H01S5/024 , H01S5/02257 , H01S5/02325

CPC classification number: H01S5/0087 , H01S5/32 , H01S5/2201 , H01S5/3203 , H01S5/34333 , H01S5/02224 , H01S5/02469 , H01S5/02476 , H01S5/02257 , H01S5/02325 , F21V29/70

Abstract: A laser-based light source includes a material arranged on a package base adjacent to a laser diode chip and an optical element coupled to the material. The optical element is aligned to receive electromagnetic radiation from the laser diode chip. The optical element includes a wavelength conversion material and is configured to receive at least a portion of the electromagnetic radiation emitted by the laser diode chip. A reflective material surrounds sides of the optical element.

107.

发明授权
Gallium and nitrogen bearing dies with improved usage of substrate material 有权

公开(公告)号：US11705689B2

公开(公告)日：2023-07-18

申请号：US17377835

申请日：2021-07-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Alexander Sztein , Melvin McLaurin , Po Shan Hsu , James W. Raring

IPC: H01S5/32 , H01S5/02 , H01S5/343 , H01S5/0234

CPC classification number: H01S5/0203 , H01S5/0202 , H01S5/0205 , H01S5/0215 , H01S5/0217 , H01S5/0234 , H01S5/3202 , H01S5/320275 , H01S5/34333 , H01S5/34346

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.