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292 条记录 (耗时 0.037 秒)

    Methods for stud bump formation and apparatus for performing the same
    111.
    发明授权
    Methods for stud bump formation and apparatus for performing the same 有权
    螺栓凸块形成方法及其执行方法

    公开(公告)号：US08540136B1

    公开(公告)日：2013-09-24

    申请号：US13605403

    申请日：2012-09-06

    申请人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

    发明人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

    IPC分类号： B23K31/02 ,  B23K37/00

    CPC分类号： B23K31/02 ,  B21D53/36 ,  B23K20/007 ,  H01L2224/78301 ,  Y10T29/49

    摘要： Methods for forming stud bumps and apparatuses for forming stud bumps are disclosed. According to an embodiment, a method includes clamping a wire with a clamp. The clamp includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method further includes bonding the wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface. The second notch is the notch pitch distance from the first notch along the wire.

    摘要翻译： 公开了用于形成柱形凸块的方法和用于形成凸块凸块的装置。 根据实施例，一种方法包括用夹具夹紧线。 所述夹具包括至少两个相对的板，并且当所述线被夹紧形成所述线中的第一凹口时，所述相对板中的至少一个包括与所述线相交的突出特征。 该方法还包括将线接合到接合表面，将线从夹具中释放出来，使线穿过钳口的间距距离通过夹具夹紧线，夹具在线中形成第二凹口，并将线断开， 接合表面上的导线的接合部分。 第二个凹口是距离第一个凹口沿导线的切口间距距离。

    Interconnect structures having permeable hard mask for sealing air gap contained by conductive structures
    116.
    发明授权
    Interconnect structures having permeable hard mask for sealing air gap contained by conductive structures 有权
    具有可渗透的硬掩模的互连结构，用于密封由导电结构包含的气隙

    公开(公告)号：US08319342B2

    公开(公告)日：2012-11-27

    申请号：US12965078

    申请日：2010-12-10

    申请人： Chung-Shi Liu ,  Chen-Hua Yu

    发明人： Chung-Shi Liu ,  Chen-Hua Yu

    IPC分类号： H01L23/522

    CPC分类号： H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76867

    摘要： A method for forming a semiconductor structure includes forming a sacrificial layer over a substrate. A first dielectric layer is formed over the sacrificial layer. A plurality of conductive structures are formed within the sacrificial layer and the first dielectric layer. The sacrificial layer is treated through the first dielectric layer, at least partially removing the sacrificial layer and forming at least one air gap between two of the conductive structures. A surface of the first dielectric layer is treated, forming a second dielectric layer over the first dielectric layer, after the formation of the air gap. A third dielectric layer is formed over the second dielectric layer. At least one opening is formed within the third dielectric layer such that the second dielectric layer substantially protects the first dielectric layer from damage by the step of forming the opening.

    摘要翻译： 一种用于形成半导体结构的方法包括在衬底上形成牺牲层。 在牺牲层上形成第一介电层。 在牺牲层和第一介电层内形成多个导电结构。 牺牲层通过第一介电层进行处理，至少部分去除牺牲层并在两个导电结构之间形成至少一个气隙。 处理第一电介质层的表面，在形成气隙之后在第一介电层上形成第二电介质层。 在第二电介质层上形成第三电介质层。 至少一个开口形成在第三电介质层内，使得第二电介质层基本上保护第一电介质层不受形成开口的步骤的损害。

    Semiconductor contact barrier
    117.
    发明授权
    Semiconductor contact barrier 有权
    半导体接触屏障

    公开(公告)号：US08294274B2

    公开(公告)日：2012-10-23

    申请号：US13015328

    申请日：2011-01-27

    申请人： Chung-Shi Liu ,  Chen-Hua Yu

    发明人： Chung-Shi Liu ,  Chen-Hua Yu

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/485 ,  H01L29/665 ,  H01L29/7833

    摘要： System and method for reducing contact resistance and improving barrier properties is provided. An embodiment includes a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions after openings have been formed through the dielectric layer for the contact. The contact barrier layer is then treated to fill the grain boundary of the contact barrier layer, thereby improving the contact resistance. In another embodiment, the contact barrier layer is formed on the conductive regions by electroless plating prior to the formation of the dielectric layer.

    摘要翻译： 提供了降低接触电阻和改善阻隔性能的系统和方法。 一个实施例包括介电层和延伸穿过介电层以连接到导电区域的触点。 在通过用于接触的电介质层形成开口之后，在导电区域和触点之间通过无电解电镀导电区域形成接触阻挡层。 然后处理接触阻挡层以填充接触阻挡层的晶界，从而提高接触电阻。 在另一个实施例中，接触阻挡层通过在形成电介质层之前的无电镀形成在导电区上。

    HIGH TEMPERATURE GATE REPLACEMENT PROCESS
    118.
    发明申请
    HIGH TEMPERATURE GATE REPLACEMENT PROCESS 有权
    高温门更换过程

    公开(公告)号：US20110151635A1

    公开(公告)日：2011-06-23

    申请号：US12643279

    申请日：2009-12-21

    申请人： Chung-Shi Liu ,  Chen-Hua Yu

    发明人： Chung-Shi Liu ,  Chen-Hua Yu

    IPC分类号： H01L21/336 ,  H01L21/3205

    CPC分类号： H01L29/66545 ,  H01L21/28518 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

    摘要： A method for fabricating an integrated circuit device is disclosed. An exemplary method comprises performing a gate replacement process to form a gate structure, wherein the gate replacement process includes an annealing process; after the annealing process, removing portions of a dielectric material layer to form a contact opening, wherein a portion of the substrate is exposed; forming a silicide feature on the exposed portion of the substrate through the contact opening; and filling the contact opening to form a contact to the exposed portion of the substrate.

    摘要翻译： 公开了一种用于制造集成电路器件的方法。 示例性方法包括执行栅极替换处理以形成栅极结构，其中栅极替换工艺包括退火工艺; 在退火处理之后，去除电介质材料层的部分以形成接触开口，其中基板的一部分被暴露; 通过所述接触开口在所述基板的所述暴露部分上形成硅化物特征; 并填充接触开口以形成与衬底的暴露部分的接触。