专利检索 ap:"Zheng-Yi LIM" 第 2 页

11.

发明授权
Method of forming metal pillar 有权
标题翻译：金属柱形成方法

公开(公告)号：US08242011B2

公开(公告)日：2012-08-14

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu

发明人： Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/1181 , H01L2224/11824 , H01L2224/11827 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13583 , H01L2224/13693 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/01073 , H01L2924/01049 , H01L2924/0103 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/01078 , H01L2924/01012 , H01L2924/01013 , H01L2924/0104 , H01L2924/01046 , H01L2924/01082 , H01L2924/01029 , H01L2924/01083 , H01L2924/01051 , H01L2224/03 , H01L2224/11 , H01L2924/00012 , H01L2924/00 , H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层，所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

12.

发明申请
Bonding Package components Through Plating 有权
标题翻译：通过电镀接合封装组件

公开(公告)号：US20130334692A1

公开(公告)日：2013-12-19

申请号：US13527422

申请日：2012-06-19

申请人： Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu

发明人： Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu

IPC分类号： B23K31/02 , H01L23/488

CPC分类号： H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00

摘要： A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

摘要翻译： 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。利用第一电连接器与第二电连接器对准，金属层被电镀在第一和第二电连接器上。金属层将第一电连接器连接到第二电连接器。

13.

发明授权
Metal bump formation 有权
标题翻译：金属凸块形成

公开(公告)号：US08501615B2

公开(公告)日：2013-08-06

申请号：US13161303

申请日：2011-06-15

申请人： Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu

发明人： Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2224/11003 , H01L2224/111 , H01L2224/1133 , H01L2224/11462 , H01L2224/1147 , H01L2224/11825 , H01L2224/11849 , H01L2224/119 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/1357 , H01L2224/13655 , H01L2224/13671 , H01L2224/13672 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/81193 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/00012 , H01L2924/01029 , H01L2924/01083 , H01L2924/0103 , H01L2924/01047 , H01L2924/01082 , H01L2224/11

摘要： A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.

摘要翻译： 提供一种用于形成金属凸块的系统和方法。一个实施例包括将导电材料附着到载体介质上，然后将导电材料接触到基底的导电区域。然后使用接合工艺将导电材料的部分结合到导电区域，以在导电区域上形成导电盖，并且去除残留的导电材料和载体介质。回流工艺用于将导电盖重新流到导电凸块中。

14.

发明申请
UBM Formation for Integrated Circuits 有权
标题翻译：集成电路的UBM形成

公开(公告)号：US20130175685A1

公开(公告)日：2013-07-11

申请号：US13344446

申请日：2012-01-05

申请人： Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu

发明人： Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu

IPC分类号： H01L21/768 , H01L23/485

CPC分类号： H01L23/485 , H01L21/768 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02166 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/13017 , H01L2224/13022 , H01L2224/13023 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2924/014

摘要： A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.

摘要翻译： 一种方法包括在金属垫上形成聚合物层，在聚合物层中形成开口以暴露金属垫的一部分，并形成凸点下冶金（UBM）。 UBM包括延伸到开口中以电耦合到金属垫的部分。

15.

发明授权
Method of forming semiconductor die 有权
标题翻译：形成半导体管芯的方法

公开(公告)号：US08258055B2

公开(公告)日：2012-09-04

申请号：US12832168

申请日：2010-07-08

申请人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu

发明人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/13 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/73 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03464 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/11831 , H01L2224/11849 , H01L2224/11901 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/3512 , H01L2224/05552 , H01L2924/00 , H01L2224/1146

摘要： An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电凸块。提供基板。焊盘在衬底上。凸块下金属（UBM）层位于焊盘上方。铜柱在UBM层之上。铜柱具有第一宽度的顶表面和具有凹形的侧壁。具有顶表面和底表面的镍层在铜柱的顶表面之上。镍层的底面具有第二宽度。第二宽度与第一宽度的比率在约0.93至约1.07之间。焊料材料在盖层的顶表面之上。