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公开(公告)号:US09117772B2
公开(公告)日:2015-08-25
申请号:US13527422
申请日:2012-06-19
申请人: Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
发明人: Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/44 , H01L23/31 , H01L25/10 , H01L25/00 , H01L25/065 , H01L21/56 , H01L23/498 , H01L23/00
CPC分类号: H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
摘要: A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.
摘要翻译: 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电连接器与第二电连接器对准,金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。
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公开(公告)号:US20130334692A1
公开(公告)日:2013-12-19
申请号:US13527422
申请日:2012-06-19
申请人: Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
发明人: Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
IPC分类号: B23K31/02 , H01L23/488
CPC分类号: H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
摘要: A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.
摘要翻译: 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电连接器与第二电连接器对准,金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。
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公开(公告)号:US20120322255A1
公开(公告)日:2012-12-20
申请号:US13161303
申请日:2011-06-15
申请人: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
发明人: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
IPC分类号: H01L21/768
CPC分类号: H01L24/11 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2224/11003 , H01L2224/111 , H01L2224/1133 , H01L2224/11462 , H01L2224/1147 , H01L2224/11825 , H01L2224/11849 , H01L2224/119 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/1357 , H01L2224/13655 , H01L2224/13671 , H01L2224/13672 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/81193 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/00012 , H01L2924/01029 , H01L2924/01083 , H01L2924/0103 , H01L2924/01047 , H01L2924/01082 , H01L2224/11
摘要: A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.
摘要翻译: 提供一种用于形成金属凸块的系统和方法。 一个实施例包括将导电材料附着到载体介质上,然后将导电材料接触到基底的导电区域。 然后使用接合工艺将导电材料的部分结合到导电区域,以在导电区域上形成导电盖,并且去除残留的导电材料和载体介质。 回流工艺用于将导电盖重新流到导电凸块中。
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公开(公告)号:US08501615B2
公开(公告)日:2013-08-06
申请号:US13161303
申请日:2011-06-15
申请人: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
发明人: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
IPC分类号: H01L21/44
CPC分类号: H01L24/11 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2224/11003 , H01L2224/111 , H01L2224/1133 , H01L2224/11462 , H01L2224/1147 , H01L2224/11825 , H01L2224/11849 , H01L2224/119 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/1357 , H01L2224/13655 , H01L2224/13671 , H01L2224/13672 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/81193 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/00012 , H01L2924/01029 , H01L2924/01083 , H01L2924/0103 , H01L2924/01047 , H01L2924/01082 , H01L2224/11
摘要: A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.
摘要翻译: 提供一种用于形成金属凸块的系统和方法。 一个实施例包括将导电材料附着到载体介质上,然后将导电材料接触到基底的导电区域。 然后使用接合工艺将导电材料的部分结合到导电区域,以在导电区域上形成导电盖,并且去除残留的导电材料和载体介质。 回流工艺用于将导电盖重新流到导电凸块中。
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5.
公开(公告)号:US09099396B2
公开(公告)日:2015-08-04
申请号:US13291508
申请日:2011-11-08
申请人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
发明人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L23/485 , H01L23/29 , H01L23/31 , H01L23/525 , H01L23/00
CPC分类号: H01L23/291 , H01L23/293 , H01L23/3171 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02313 , H01L2224/02331 , H01L2224/02381 , H01L2224/0239 , H01L2224/03424 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05111 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/05583 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/08503 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16503 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/2064 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure.
摘要翻译: 半导体器件包括通过浸锡工艺在钝化后互连(PPI)结构的表面上形成的导电层。 聚合物层形成在导电层上并用开口图案化以暴露导电层的一部分。 然后在聚合物层的开口中形成焊料凸块以电连接到PPI结构。
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公开(公告)号:US08865586B2
公开(公告)日:2014-10-21
申请号:US13344446
申请日:2012-01-05
申请人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
发明人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/44 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L23/495 , H01L23/485 , H01L21/768
CPC分类号: H01L23/485 , H01L21/768 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02166 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/13017 , H01L2224/13022 , H01L2224/13023 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2924/014
摘要: A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.
摘要翻译: 一种方法包括在金属垫上形成聚合物层,在聚合物层中形成开口以暴露金属垫的一部分,并形成凸点下冶金(UBM)。 UBM包括延伸到开口中以电耦合到金属垫的部分。
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公开(公告)号:US20130175685A1
公开(公告)日:2013-07-11
申请号:US13344446
申请日:2012-01-05
申请人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
发明人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/768 , H01L23/485
CPC分类号: H01L23/485 , H01L21/768 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02166 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/13017 , H01L2224/13022 , H01L2224/13023 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2924/014
摘要: A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.
摘要翻译: 一种方法包括在金属垫上形成聚合物层,在聚合物层中形成开口以暴露金属垫的一部分,并形成凸点下冶金(UBM)。 UBM包括延伸到开口中以电耦合到金属垫的部分。
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公开(公告)号:US08242011B2
公开(公告)日:2012-08-14
申请号:US13004376
申请日:2011-01-11
申请人: Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu
发明人: Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu
IPC分类号: H01L21/44
CPC分类号: H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/1181 , H01L2224/11824 , H01L2224/11827 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13583 , H01L2224/13693 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/01073 , H01L2924/01049 , H01L2924/0103 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/01078 , H01L2924/01012 , H01L2924/01013 , H01L2924/0104 , H01L2924/01046 , H01L2924/01082 , H01L2924/01029 , H01L2924/01083 , H01L2924/01051 , H01L2224/03 , H01L2224/11 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要: The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.
摘要翻译: 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤:提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层,所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应,以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。
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公开(公告)号:US08937388B2
公开(公告)日:2015-01-20
申请号:US13492285
申请日:2012-06-08
申请人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
发明人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
IPC分类号: H01L23/52
CPC分类号: H01L24/06 , H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05551 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/06051 , H01L2224/10145 , H01L2224/11334 , H01L2224/13021 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/01322 , H01L2924/01023 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要: Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.
摘要翻译: 公开了用于半导体器件的晶片级封装(WLP)的方法和装置。 电路的接触焊盘可以通过后钝化互连(PPI)线和PPI焊盘连接到焊料凸块。 PPI垫可以包括中空部分和开口。 PPI垫可以与PPI线一起形成为一体。 PPI垫的中空部分可用于控制球安装过程中使用的焊剂量,以便任何额外量的焊剂可以从PPI焊盘的固体部分的开口逸出。 焊锡球可以直接安装到PPI焊盘,而不使用正常的WLP封装所需的任何下凸块金属(UBM)。
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公开(公告)号:US08659155B2
公开(公告)日:2014-02-25
申请号:US12846353
申请日:2010-07-29
申请人: Ming-Da Cheng , Wen-Hsiung Lu , Chih-Wei Lin , Ching-Wen Chen , Yi-Wen Wu , Chia-Tung Chang , Ming-Che Ho , Chung-Shi Liu
发明人: Ming-Da Cheng , Wen-Hsiung Lu , Chih-Wei Lin , Ching-Wen Chen , Yi-Wen Wu , Chia-Tung Chang , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L23/48
CPC分类号: H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/10145 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/11827 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16507 , H01L2224/81191 , H01L2224/81815 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/3651 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/05 , H01L2924/00012 , H01L2924/01083 , H01L2924/00 , H01L2224/05552
摘要: The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.
摘要翻译: 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘,后钝化互连(PPI)层或顶层金属层。 通过在导电层(或基底导电层)上进行保护性导电层的原位沉积,金属凸块的凸块下金属(UBM)层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中,可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中,如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的,则不需要UBM层。
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