公开(公告)号：US10017856B1

公开(公告)日：2018-07-10

申请号：US15489242

申请日：2017-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: H01L21/02 ,  C23C16/448 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/4486 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US20170301897A1

公开(公告)日：2017-10-19

申请号：US15338950

申请日：2016-10-31

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-Tak Young ,  Byung-Sung Kwak ,  Giback Park ,  Lizhong Sun ,  Jeffrey L. Franklin ,  Robert Jan Visser

IPC: H01M2/10 ,  H01M2/08 ,  H01M2/02 ,  H01M10/0525 ,  H01M10/0585

CPC classification number: H01M2/1094 ,  B23K26/0006 ,  B23K26/142 ,  B23K26/362 ,  B23K2101/34 ,  B23K2101/36 ,  B23K2103/172 ,  B29C59/16 ,  B29K2995/0006 ,  B29L2031/3468 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32715 ,  H01J37/3426 ,  H01M2/0207 ,  H01M2/026 ,  H01M2/0267 ,  H01M2/0287 ,  H01M2/08 ,  H01M4/382 ,  H01M4/525 ,  H01M6/005 ,  H01M6/18 ,  H01M6/188 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0585 ,  H01M2220/30 ,  H01M2300/0065 ,  H01M2300/0068 ,  Y02T10/7011

Abstract: A thin film device, comprising: an active device region, the active device region having reversible motion at least along a first direction between a first device state and a second device state; and a thin film encapsulant disposed adjacent the selective expansion region, wherein the thin film encapsulant comprises a first thickness in the first device state and a second thickness in the second device state, the first thickness being greater than the second thickness by 10% or greater, wherein the thin film encapsulant comprises a laser-etchable material.

公开(公告)号：US09780223B2

公开(公告)日：2017-10-03

申请号：US15210637

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Robert Jan Visser ,  Bhaskar Kumar

IPC: H01L21/00 ,  H01L29/786 ,  B82Y30/00 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18 ,  H01L51/42 ,  B82Y10/00 ,  H01L21/324 ,  H01L27/12 ,  H01L29/207 ,  H01L29/45 ,  H01L29/66 ,  H01L51/00

CPC classification number: H01L29/78681 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/301 ,  C23C16/56 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/3245 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/207 ,  H01L29/454 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696 ,  H01L31/022425 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1864 ,  H01L51/0048 ,  H01L51/424 ,  Y02E10/544 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.

公开(公告)号：US20170148642A1

公开(公告)日：2017-05-25

申请号：US15337781

申请日：2016-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C09D183/08 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116

Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

公开(公告)号：US20160307771A1

公开(公告)日：2016-10-20

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US20160040040A1

公开(公告)日：2016-02-11

申请号：US14456356

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Arup Purkayastha ,  Prerna Goradia ,  Ranga Rao Arnepalli ,  Robert Jan Visser ,  Rajeev Bajaj

IPC: C09G1/02 ,  H01L21/321 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

Abstract: A slurry for selective chemical mechanical polishing of a copper layer is disclosed. The slurry includes either porous zeolite abrasive particles of substantially homogeneous composition having an average pore diameter of approximately 0.1-6 nanometers or hexagonal boron nitride abrasive particles. The slurry also includes an organic complexing compound that is 0.1-25 wt. % of the slurry, an oxidizer that is 0.1-10 wt. % of the slurry, and a solvent. A chemical mechanical polishing method for using the slurry is also disclosed.

Abstract translation: 公开了一种用于铜层的选择性化学机械抛光的浆料。 浆料包括具有约0.1-6纳米的平均孔径或六方氮化硼磨料颗粒的基本上均匀组成的多孔沸石磨料颗粒。 该浆料还包括有机配位化合物，其为0.1-25wt。 ％的浆料，氧化剂为0.1-10重量％ ％的浆料和溶剂。 还公开了一种使用该浆料的化学机械抛光方法。

公开(公告)号：US20150162214A1

公开(公告)日：2015-06-11

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3213 ,  H01L21/3205

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

Abstract translation: 提供了选择性沉积的方法。 某些方法描述了提供第一衬底表面; 提供第二衬底表面; 在所述第一和第二衬底表面上沉积第一层膜，其中所述沉积在所述第二衬底表面上具有孵育延迟，使得所述第一衬底表面上的所述第一层膜比沉积在所述第二衬底表面上的所述第一层膜厚 基材表面; 并且在所述第一和第二衬底表面上蚀刻所述第一层膜，其中所述第二衬底表面上的所述第一层膜至少被基本上去除，但所述第一衬底上的所述第一层膜仅被部分地去除。

公开(公告)号：US12021102B2

公开(公告)日：2024-06-25

申请号：US18185863

申请日：2023-03-17

Applicant: Applied Materials, Inc.

Inventor： Jinxin Fu ,  Yongan Xu ,  Ludovic Godet ,  Naamah Argaman ,  Robert Jan Visser

IPC: H01L27/146 ,  G02B1/00 ,  G02B27/00 ,  H04N5/265 ,  H04N23/16 ,  H04N25/13 ,  H04N25/611 ,  H04N25/76

CPC classification number: H01L27/14627 ,  G02B1/002 ,  G02B27/005 ,  H01L27/14621 ,  H04N5/265 ,  H04N23/16 ,  H04N25/134 ,  H04N25/611 ,  H04N25/76

Abstract: An imaging system and a method of creating composite images are provided. The imaging system includes one or more lens assemblies coupled to a sensor. When reflected light from an object enters the imaging system, incident light on the metalens filter systems creates filtered light, which is turned into composite images by the corresponding sensors. Each metalens filter system focuses the light into a specific wavelength, creating the metalens images. The metalens images are sent to the processor, wherein the processor combines the metalens images into one or more composite images. The metalens images are combined into a composite image, and the composite image has reduced chromatic aberrations.

公开(公告)号：US11956994B2

公开(公告)日：2024-04-09

申请号：US17398442

申请日：2021-08-10

Applicant: Applied Materials, Inc.

Inventor： Chung-Chih Wu ,  Hoang Yan Lin ,  Guo-Dong Su ,  Zih-Rou Cyue ,  Li-Yu Yu ,  Wei-Kai Lee ,  Guan-Yu Chen ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Gang Yu ,  Byung-Sung Kwak ,  Robert Jan Visser ,  Chi-Jui Chang

IPC: H10K50/858 ,  G09F9/33 ,  H04N13/302

CPC classification number: H10K50/858 ,  G09F9/335 ,  H04N13/302

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

公开(公告)号：US11927535B2

公开(公告)日：2024-03-12

申请号：US18129503

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Avishek Ghosh ,  Byung-Sung Kwak ,  Todd Egan ,  Robert Jan Visser ,  Gangadhar Banappanavar ,  Dinesh Kabra

IPC: G01N23/00 ,  G01N21/64 ,  H10K50/10

CPC classification number: G01N21/6489 ,  G01N21/6408 ,  H10K50/182

Abstract: An apparatus for determining a characteristic of a photoluminescent (PL) layer comprises: a light source that generates an excitation light that includes light from the visible or near-visible spectrum; an optical assembly configured to direct the excitation light onto a PL layer; a detector that is configured to receive a PL emission generated by the PL layer in response to the excitation light interacting with the PL layer and generate a signal based on the PL emission; and a computing device coupled to the detector and configured to receive the signal from the detector and determine a characteristic of the PL layer based on the signal.