公开(公告)号：US08821676B2

公开(公告)日：2014-09-02

申请号：US13099394

申请日：2011-05-03

申请人： Yusuke Yasuda ,  Toshiaki Morita ,  Eiichi Ide ,  Hiroshi Hozoji ,  Toshiaki Ishii

发明人： Yusuke Yasuda ,  Toshiaki Morita ,  Eiichi Ide ,  Hiroshi Hozoji ,  Toshiaki Ishii

IPC分类号： B29C65/02 ,  B32B5/02 ,  B32B5/16

CPC分类号： H05K3/321 ,  B22F1/0014 ,  B22F1/0062 ,  B22F3/14 ,  B22F2003/145 ,  B23K35/22 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/40 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29311 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29355 ,  H01L2224/2936 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/8584 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/2076 ,  H05K2201/0224 ,  H05K2201/0257 ,  H05K2201/0266 ,  Y10T428/12028 ,  Y10T428/12181 ,  Y10T428/2991 ,  Y10T428/8305 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/83205 ,  H01L2924/00012

摘要： A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

摘要翻译： 一种粘合材料，其包含涂覆有碳原子数为2〜8的有机物质的金属粒子，其中，所述金属粒子包含100nm以下的第一部分和大于100nm但不大于100μm的第二部分， 基于体积基数具有至少峰值分布的部分。 本公开还涉及使用接合材料的接合方法。

公开(公告)号：US20130279230A1

公开(公告)日：2013-10-24

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H02M7/00 ,  H05K7/20

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×εr, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 消耗功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×ε的关系，其中绝缘部件的相对介电常数为Er，浪涌电压 在导体板和散热板之间产生的功率半导体器件的ON / OFF开关操作是Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US20130119525A1

公开(公告)日：2013-05-16

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

发明人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49568 ,  B60L1/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/36 ,  B60L2240/525 ,  H01L21/56 ,  H01L21/565 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/20927 ,  Y02T10/6217 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。 辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的 区域项目。 在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角 为每一个。

公开(公告)号：US08314484B2

公开(公告)日：2012-11-20

申请号：US12691175

申请日：2010-01-21

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Ito ,  Toshiaki Ishii ,  Katsuo Arai ,  Takuya Nakajo ,  Hidemasa Kagii

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Ito ,  Toshiaki Ishii ,  Katsuo Arai ,  Takuya Nakajo ,  Hidemasa Kagii

IPC分类号： H01L23/15

CPC分类号： H01L21/56 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2224/48744

摘要： In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

摘要翻译： 在半导体器件的结构中，Si芯片和金属引线框通过金属接合，通过具有三维网状结构的高导电性金属的多孔接合层，使用Ag作为接合材料，以及含有 在与聚合物树脂接触的半导体组件的表面上形成氧化锌或氧化铝。 以这种方式，通过与主要由Ag形成的多孔结构的接合层的接合，可以降低Si片的热应力负荷，并且可以提高接合层本身的疲劳寿命。 此外，由于通过锚固效应可以提高聚合物树脂对膜的粘附性，可以防止接合部发生裂纹，从而可以提供高可靠性的无铅半导体器件。

公开(公告)号：US07816786B2

公开(公告)日：2010-10-19

申请号：US12389811

申请日：2009-02-20

申请人： Kinya Nakatsu ,  Hideki Miyazaki ,  Yoshitaka Takezawa ,  Toshiaki Ishii ,  Hiroshi Hozoji

发明人： Kinya Nakatsu ,  Hideki Miyazaki ,  Yoshitaka Takezawa ,  Toshiaki Ishii ,  Hiroshi Hozoji

IPC分类号： H01L23/34

CPC分类号： H01L23/3675 ,  F28F3/12 ,  H01L23/473 ,  H01L24/33 ,  H01L24/73 ,  H01L25/071 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.

摘要翻译： 半导体器件包括电连接到半导体芯片的电极的半导体芯片和引线。 中空散热器基座容纳用具有电绝缘性的高导热性树脂模制的半导体器件。 散热器底座内有一个冷却介质通道，或在外部散热片。 或者，散热器基座容纳在第二散热器基座中。

公开(公告)号：US07504720B2

公开(公告)日：2009-03-17

申请号：US11505467

申请日：2006-08-17

申请人： Kinya Nakatsu ,  Hideki Miyazaki ,  Yoshitaka Takezawa ,  Toshiaki Ishii ,  Hiroshi Hozoji

发明人： Kinya Nakatsu ,  Hideki Miyazaki ,  Yoshitaka Takezawa ,  Toshiaki Ishii ,  Hiroshi Hozoji

IPC分类号： H01L23/34

CPC分类号： H01L23/3675 ,  F28F3/12 ,  H01L23/473 ,  H01L24/33 ,  H01L24/73 ,  H01L25/071 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.

摘要翻译： 半导体器件包括电连接到半导体芯片的电极的半导体芯片和引线。 中空散热器基座容纳用具有电绝缘性的高导热性树脂模制的半导体器件。 散热器底座上有一个冷却介质通道，或在外部散热片。 或者，散热器基座容纳在第二散热器基座中。

公开(公告)号：US20070298244A1

公开(公告)日：2007-12-27

申请号：US11766124

申请日：2007-06-21

申请人： YUSUKE YASUDA ,  Toshiaki Morita ,  Toshiaki Ishii

发明人： YUSUKE YASUDA ,  Toshiaki Morita ,  Toshiaki Ishii

IPC分类号： B32B5/16

CPC分类号： H01L24/29 ,  B23K35/0233 ,  B23K35/22 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/3754 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19107 ,  Y10T428/256 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/2076 ,  H01L2224/83205

摘要： An object of the present invention is to provide a bonding material that is excellent in shear strength and a capability of heat radiation of a bonding layer and can be formed into a sheet. The present invention has a feature of providing a bonding material comprising metal fibers each of which is coated on its surface with an organic material or a metal oxide, has an aspect ratio not more than 2, and has a longitudinal length equal to or less than 100 μm; and metal particles each of which is coated on its surface with an organic material or a metal oxide, has an aspect ratio equal to or less than 1.5, and has a particle size equal to or less than 100 nm, wherein sintering of the metal particles forms metallic bonds between the bonding material and surfaces of members to be bonded, thereby bonding the members to be bonded together.

摘要翻译： 本发明的目的在于提供一种接合材料，该接合材料的粘合层的剪切强度和热辐射能力优异，并且可以形成为片材。 本发明的特征在于提供一种包含金属纤维的接合材料，每个金属纤维在其表面上涂覆有机材料或金属氧化物，其纵横比不大于2，纵向长度等于或小于 100个妈妈 并且其表面上分别用有机材料或金属氧化物涂覆的金属颗粒具有等于或小于1.5的长径比，并且具有等于或小于100nm的粒度，其中金属颗粒的烧结 在接合材料和要结合的构件的表面之间形成金属键，从而将要结合的构件结合在一起。

公开(公告)号：US07298039B2

公开(公告)日：2007-11-20

申请号：US10910903

申请日：2004-08-04

申请人： Nobutake Tsuyuno ,  Toshiaki Ishii ,  Toshiya Satoh ,  Mitsuhiro Masuda

发明人： Nobutake Tsuyuno ,  Toshiaki Ishii ,  Toshiya Satoh ,  Mitsuhiro Masuda

IPC分类号： H01L23/22

CPC分类号： H01L23/4951 ,  H01L23/49531 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/165 ,  H01L25/18 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/01012 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/284 ,  H05K3/386 ,  H05K2201/0209 ,  H05K2203/0315 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In order to provide a low-cost and high heat-radiating electronic circuit device featuring high compactness, little warpage, high air tightness, high moldability, high mass productivity, high reliability against thermal shocks, and high oil-proof reliability, a module structure made by packing a whole multi-layer circuit board which connects a semiconductor operating element, semiconductor memory elements, and passive elements thereon and part of a supporting material on which said multi-layer circuit board is placed into a single package by transfer-molding; wherein said multi-layer circuit board and said supporting material are bonded together with a compound metallic material made up from copper oxide and at least one metal selected from a set of gold, silver, and copper.

摘要翻译： 为了提供具有高紧凑性，小弯曲性，高气密性，高成型性，高质量生产率，高耐热冲击可靠性和高耐油可靠性的低成本高散热电子电路装置，模块结构 通过将通过转印成型将半导体操作元件，半导体存储元件和无源元件及其上放置有多层电路板的支撑材料的一部分封装在单个封装中的整个多层电路板制成; 其中所述多层电路板和所述支撑材料用由氧化铜和至少一种选自金，银和铜的金属组成的复合金属材料结合在一起。

公开(公告)号：US20070215903A1

公开(公告)日：2007-09-20

申请号：US11685802

申请日：2007-03-14

申请人： Kozo Sakamoto ,  Toshiaki Ishii

发明人： Kozo Sakamoto ,  Toshiaki Ishii

IPC分类号： H01L31/00

CPC分类号： H01L25/072 ,  H01L23/49844 ,  H01L23/5383 ,  H01L23/5385 ,  H01L25/115 ,  H01L25/117 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599

摘要： A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

摘要翻译： 一种功率半导体器件，具有第一半导体区域和第二半导体区域; 安装在第一半导体区域中的由第三半导体区域包围的半导体衬底主表面上的第一电极焊盘和具有第一和第二布线层的多层衬底，以取出半导体芯片的电极; 通过导电材料将安装在多层基板上的第一电极的第一布线层部分与由第三半导体区域包围的内部的半导体基板主表面相对的区域和第一电极焊盘接合; 将第一电极的第一布线层部分和导电部分的第二布线层接合; 并且在由所述第三半导体区域包围的内部将所述第二布线层延伸到与所述半导体基板主表面相对的区域的外部。

公开(公告)号：US06220764B1

公开(公告)日：2001-04-24

申请号：US09480478

申请日：2000-01-11

申请人： Takeshi Kato ,  Koji Yoshida ,  Toshinori Hirataka ,  Toshiaki Ishii ,  Kazuyuki Fukuda ,  Tadaaki Ishikawa ,  Toshimasa Miura ,  Tsutomu Kono ,  Kimio Tatsuno

发明人： Takeshi Kato ,  Koji Yoshida ,  Toshinori Hirataka ,  Toshiaki Ishii ,  Kazuyuki Fukuda ,  Tadaaki Ishikawa ,  Toshimasa Miura ,  Tsutomu Kono ,  Kimio Tatsuno

IPC分类号： G02B636

CPC分类号： G02B6/4204 ,  G02B6/3865 ,  G02B6/3873 ,  G02B6/421 ,  G02B6/4292 ,  H01L24/45 ,  H01L2224/45144 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： An optical module for an optical device and an optical fiber is constituted by a pre-molded plastic package. In forming the plastic package, the main flowing direction of the molding resin is substantially parallel with the optical axis of the optical fiber. The optical module is formed by molding the resin by an injection method using pressure and then solidifying the resin. When the plastic package is formed by comprehensive molding, the flowing direction of the resin is parallel with the optical axis direction of the optical fiber to be installed in the optical module. As a result, for comprehensive molding, the molding pressure applied to the optical fiber is reduced. By using the resin case that is formed, the resulting package exhibits high rigidity and low thermal expansion properties in connection with the flowing direction of the resin, thus reducing the external stress and thermal stress applied to the optical fiber.

摘要翻译： 用于光学器件和光纤的光学模块由预成型塑料封装构成。 在形成塑料包装时，成型树脂的主流动方向基本上与光纤的光轴平行。 光学模块通过使用压力的注射方法模制树脂然后使树脂固化而形成。 当通过综合成型形成塑料包装时，树脂的流动方向与要安装在光学模块中的光纤的光轴方向平行。 结果，对于综合成型，施加到光纤的成型压力降低。 通过使用形成的树脂壳体，所得到的包装与树脂的流动方向相比具有高刚性和低热膨胀性，从而减小施加到光纤上的外部应力和热应力。