公开(公告)号：US20180138023A1

公开(公告)日：2018-05-17

申请号：US15813877

申请日：2017-11-15

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Mukund Srinivasan

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/458 ,  C23C16/52 ,  C23C16/511

CPC classification number: H01J37/32935 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/509 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/202 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and the substrate support. The controller is configured monitor the position of the at least one substrate and provide or disable power to the individual plasma sources based on the position of the substrate relative to the individual plasma sources.

公开(公告)号：US09972476B2

公开(公告)日：2018-05-15

申请号：US14862722

申请日：2015-09-23

Applicant: BROTHER KOGYO KABUSHIKI KAISHA ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Kazunari Taki ,  Kentaro Shinoda ,  Hideki Kanada ,  Hiroyuki Kousaka ,  Yasuyuki Takaoka

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/511 ,  C23C16/52 ,  H05H1/46 ,  C23C16/26

CPC classification number: H01J37/32293 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32266 ,  H01J2237/3321 ,  H05H1/46 ,  H05H2001/463

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes.

公开(公告)号：US20180130681A1

公开(公告)日：2018-05-10

申请号：US15574514

申请日：2016-05-11

Applicant: Tokyo Electron Limited

Inventor： Tamotsu Tanifuji ,  Tamaki Yuasa ,  Satoru Kawakami

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/44 ,  C23C16/52 ,  C23C16/50 ,  H01J37/32

CPC classification number: H01L21/67173 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67063 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68707

Abstract: A processing system includes: at least one processing unit. Each processing unit includes a plurality of processing chambers, and a utility module. Each of the processing chambers processes a processing target object using a supplied processing gas. The utility module includes a flow rate controller configured to control a flow rate of the processing gas supplied to each of the plurality of processing chambers. The plurality of processing chambers are disposed to overlap each other in a vertical direction. The utility module is disposed between two processing chambers adjacent in the vertical direction, among the plurality of processing chambers.

公开(公告)号：US20180127878A1

公开(公告)日：2018-05-10

申请号：US15346738

申请日：2016-11-09

Applicant: Do Hyeong LEE

Inventor： Do Hyeong LEE

IPC: C23C16/50 ,  C23C16/34 ,  H01J37/32

CPC classification number: H01J37/32009 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/503 ,  C23C16/515 ,  H01J2237/3321

Abstract: A coating device of component for semiconductor manufacturing apparatus comprises a source among pulse type plasma source, ICP source, CCP source, CCP+ICP source and plasma source using a remote plasma to be carried out nitride treatment by a gas among N2, NH3, CH4 and N2O being supplied into a chamber; and a DC voltage for forming a plasma by said source and for supplying 50 KeV˜100 KeV of voltage toward a susceptor placed thereon with a basic material or a pulse voltage for injecting ion.

公开(公告)号：US09953809B2

公开(公告)日：2018-04-24

申请号：US14972985

申请日：2015-12-17

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chih-Chiang Weng ,  Chen-Der Tsai ,  Yu-Ming Wang

IPC: C23C16/00 ,  H01J37/32 ,  B65D25/14 ,  C23C16/26 ,  C23C16/507 ,  C23C16/04

CPC classification number: H01J37/32394 ,  B65D25/14 ,  C23C16/045 ,  C23C16/26 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321

Abstract: An apparatus for coating a film in a container and a method for coating a film are provided. The apparatus includes a cylindrical housing having a containing space penetrating through both ends thereof; a first arc-shaped electrode and a second arc-shaped electrode surrounding and covering an outer side of the cylindrical housing with a gap formed between the first and second arc-shaped electrodes such that the first arc-shaped electrode is free from electrically connected to the second arc-shaped electrode; a first conductive ring and a second conductive ring surrounding on the first and second arc-shaped electrodes, respectively; an upper supporting seat and a lower supporting seat disposed at the both ends of the cylindrical housing, respectively, to form a sealed environment for the containing space; and a valve component furnished at the upper supporting seat and inserted into the container for providing a processing gas in a film-coating process.

公开(公告)号：US09934949B2

公开(公告)日：2018-04-03

申请号：US14784375

申请日：2014-04-10

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Shoubin Zhang ,  Keita Umemoto ,  Masahiro Shoji

IPC: C23C14/00 ,  H01J37/34 ,  C22C9/00 ,  C23C14/06 ,  C23C14/34 ,  C22C28/00 ,  B22F3/10

CPC classification number: H01J37/3426 ,  B22F3/10 ,  B22F2201/10 ,  B22F2201/20 ,  C22C9/00 ,  C22C28/00 ,  C23C14/0623 ,  C23C14/3414 ,  H01J2237/3321

Abstract: A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 μm or less.

公开(公告)号：US09922805B2

公开(公告)日：2018-03-20

申请号：US14699249

申请日：2015-04-29

Applicant: Asahi Glass Company, Limited

Inventor： Hirotomo Kawahara ,  Nobutaka Aomine ,  Kazunobu Maeshige ,  Yuki Aoshima ,  Hiroshi Hanekawa

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32568 ,  C23C16/402 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32577 ,  H01J2237/3321 ,  H05H1/46 ,  H05H2001/4675 ,  H05H2001/4682

Abstract: A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.

公开(公告)号：US20180047541A1

公开(公告)日：2018-02-15

申请号：US15671906

申请日：2017-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya OKABE ,  Takashi MOCHIZUKI ,  Hideaki YAMASAKI ,  Nagayasu HIRAMATSU ,  Kazuki DEMPOH

IPC: H01J37/32 ,  C23C16/06 ,  C23C16/46 ,  C23C16/458 ,  H01L21/285 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/045 ,  C23C16/06 ,  C23C16/14 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76856

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.

公开(公告)号：US20180025890A1

公开(公告)日：2018-01-25

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li HOU ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo PARK ,  Robin L. TINER

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  C23C16/34

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US20180019101A1

公开(公告)日：2018-01-18

申请号：US15634125

申请日：2017-06-27

Applicant: ABM CO., LTD.

Inventor： Bum Mo AHN ,  Seung Ho PARK

IPC: H01J37/32 ,  C23C16/50 ,  C22C21/08 ,  C25D11/08

CPC classification number: H01J37/3244 ,  C22C21/08 ,  C23C16/4404 ,  C23C16/50 ,  C25D11/024 ,  C25D11/04 ,  C25D11/08 ,  C25D11/16 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/3321 ,  H01J2237/334

Abstract: This invention relates to a metal component, a manufacturing method thereof, and a process chamber having the metal component, and particularly to a metal component useful in a display or semiconductor manufacturing process, a manufacturing method thereof, and a process chamber having the metal component, wherein among addition elements of an aluminum alloy that constitutes the metal substrate of the metal component, the addition element existing on the surface thereof is removed, and a barrier layer having no pores is formed, thereby solving problems attributable to a conventional anodized film having a porous layer and attributable to the addition element in the form of particles on the surface of the metal substrate.