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公开(公告)号:US08659155B2
公开(公告)日:2014-02-25
申请号:US12846353
申请日:2010-07-29
申请人: Ming-Da Cheng , Wen-Hsiung Lu , Chih-Wei Lin , Ching-Wen Chen , Yi-Wen Wu , Chia-Tung Chang , Ming-Che Ho , Chung-Shi Liu
发明人: Ming-Da Cheng , Wen-Hsiung Lu , Chih-Wei Lin , Ching-Wen Chen , Yi-Wen Wu , Chia-Tung Chang , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L23/48
CPC分类号: H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/10145 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/11827 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16507 , H01L2224/81191 , H01L2224/81815 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/3651 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/05 , H01L2924/00012 , H01L2924/01083 , H01L2924/00 , H01L2224/05552
摘要: The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.
摘要翻译: 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘,后钝化互连(PPI)层或顶层金属层。 通过在导电层(或基底导电层)上进行保护性导电层的原位沉积,金属凸块的凸块下金属(UBM)层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中,可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中,如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的,则不需要UBM层。
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2.
公开(公告)号:US08405199B2
公开(公告)日:2013-03-26
申请号:US12832231
申请日:2010-07-08
申请人: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Ming-Che Ho , Chung-Shi Liu
发明人: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L23/48
CPC分类号: H01L24/13 , H01L21/563 , H01L23/3192 , H01L24/05 , H01L24/11 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05166 , H01L2224/05572 , H01L2224/05573 , H01L2224/05647 , H01L2224/1132 , H01L2224/11424 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13582 , H01L2224/136 , H01L2224/13647 , H01L2224/16145 , H01L2224/16225 , H01L2224/73204 , H01L2224/97 , H01L2225/06513 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/10335 , H01L2924/14 , H01L2924/3512 , H01L2224/13655 , H01L2224/81 , H01L2224/13099 , H01L2924/00 , H01L2224/05552
摘要: An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.
摘要翻译: 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面,边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在盖层的顶表面之上。
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公开(公告)号:US08937388B2
公开(公告)日:2015-01-20
申请号:US13492285
申请日:2012-06-08
申请人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
发明人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
IPC分类号: H01L23/52
CPC分类号: H01L24/06 , H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05551 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/06051 , H01L2224/10145 , H01L2224/11334 , H01L2224/13021 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/01322 , H01L2924/01023 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要: Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.
摘要翻译: 公开了用于半导体器件的晶片级封装(WLP)的方法和装置。 电路的接触焊盘可以通过后钝化互连(PPI)线和PPI焊盘连接到焊料凸块。 PPI垫可以包括中空部分和开口。 PPI垫可以与PPI线一起形成为一体。 PPI垫的中空部分可用于控制球安装过程中使用的焊剂量,以便任何额外量的焊剂可以从PPI焊盘的固体部分的开口逸出。 焊锡球可以直接安装到PPI焊盘,而不使用正常的WLP封装所需的任何下凸块金属(UBM)。
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公开(公告)号:US20130328190A1
公开(公告)日:2013-12-12
申请号:US13492285
申请日:2012-06-08
申请人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
发明人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
IPC分类号: H01L23/498 , H01L21/768
CPC分类号: H01L24/06 , H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05551 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/06051 , H01L2224/10145 , H01L2224/11334 , H01L2224/13021 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/01322 , H01L2924/01023 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要: Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.
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公开(公告)号:US08703546B2
公开(公告)日:2014-04-22
申请号:US12784314
申请日:2010-05-20
申请人: Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
发明人: Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/82 , H01L21/288
CPC分类号: H01L21/288 , C25D7/123 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03831 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/1181 , H01L2224/11901 , H01L2224/1308 , H01L2224/13083 , H01L2224/13118 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/93 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
摘要: A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.
摘要翻译: 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征,并且在活化处理溶液中对第一金属特征的表面进行活化处理,其中活化处理溶液包括处理剂, 电离(DI)水。 在执行激活处理的步骤之后,执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。
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公开(公告)号:US20110287628A1
公开(公告)日:2011-11-24
申请号:US12784314
申请日:2010-05-20
申请人: Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
发明人: Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/445
CPC分类号: H01L21/288 , C25D7/123 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03831 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/1181 , H01L2224/11901 , H01L2224/1308 , H01L2224/13083 , H01L2224/13118 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/93 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
摘要: A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.
摘要翻译: 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征,并且在活化处理溶液中对第一金属特征的表面进行活化处理,其中活化处理溶液包括处理剂, 电离(DI)水。 在执行激活处理的步骤之后,执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。
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公开(公告)号:US20130127059A1
公开(公告)日:2013-05-23
申请号:US13299100
申请日:2011-11-17
申请人: Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
发明人: Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号: G06F17/5077 , G06F17/5072 , H01L23/488 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05552 , H01L2224/05572 , H01L2224/05666 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13012 , H01L2224/13014 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1403 , H01L2224/14132 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029
摘要: A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.
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公开(公告)号:US20120286423A1
公开(公告)日:2012-11-15
申请号:US13556016
申请日:2012-07-23
申请人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
发明人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
IPC分类号: H01L23/498
CPC分类号: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
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公开(公告)号:US08993431B2
公开(公告)日:2015-03-31
申请号:US12778610
申请日:2010-05-12
申请人: Chun-Lei Hsu , Ming-Che Ho , Ming-Da Cheng , Chung-Shi Liu
发明人: Chun-Lei Hsu , Ming-Che Ho , Ming-Da Cheng , Chung-Shi Liu
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03424 , H01L2224/03464 , H01L2224/0347 , H01L2224/0401 , H01L2224/05559 , H01L2224/05571 , H01L2224/05572 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1148 , H01L2224/1161 , H01L2224/11616 , H01L2224/11831 , H01L2224/13005 , H01L2224/13022 , H01L2224/1308 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2924/00013 , H01L2924/0002 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2924/01014 , H01L2924/206 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要: A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.
摘要翻译: 一种用于制造凸块结构的方法在封装层的开口中形成凸起下金属(UBM)层,然后在封装层的开口内的UBM层上形成凸点层。 在从封装层的上表面除去突起层的多余材料之后,去除封装层直到凸起层的顶部从封装层的上表面突出。
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公开(公告)号:US08791579B2
公开(公告)日:2014-07-29
申请号:US13299100
申请日:2011-11-17
申请人: Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
发明人: Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
IPC分类号: H01L23/52 , H01L23/48 , H01L23/485 , H01L23/495
CPC分类号: G06F17/5077 , G06F17/5072 , H01L23/488 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05552 , H01L2224/05572 , H01L2224/05666 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13012 , H01L2224/13014 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1403 , H01L2224/14132 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029
摘要: A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.
摘要翻译: 一种装置包括在包装部件的顶表面上的多个连接器。 多个连接器包括具有第一横向尺寸的第一连接器和具有第二横向尺寸的第二连接器。 第二横向尺寸大于第一横向尺寸。 第一和第二横向尺寸在平行于包装部件的主表面的方向上测量。
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