Method and apparatus for adjusting wafer warpage
    9.
    发明授权
    Method and apparatus for adjusting wafer warpage 有权
    调整晶片翘曲的方法和装置

    公开(公告)号:US09576830B2

    公开(公告)日:2017-02-21

    申请号:US13475790

    申请日:2012-05-18

    CPC分类号: H01L21/67288 H01L21/6838

    摘要: A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

    摘要翻译: 一种用于调整晶片翘曲的方法,包括提供具有中心部分和边缘部分的晶片,并提供其上具有用于保持晶片的保持区域的保持台。 将晶片放置在保持台上,其中心部分高​​于边缘部分,然后按压到保持区域上,使得晶片通过自吸力被吸引并保持在保持台上。 根据晶片的翘曲量将晶片在预定温度下加热预定时间,以便实现基本上平坦的晶片或预定的晶片级。