公开(公告)号：WO2014073963A1

公开(公告)日：2014-05-15

申请号：PCT/NL2013/050800

申请日：2013-11-08

Applicant: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO ,  IMEC

Inventor： SMITS, Edsger Constant Pieter ,  PERINCHERY, Sandeep Menon ,  VAN DEN BRAND, Jeroen ,  MANDAMPARAMBIL, Rajesh ,  SCHOO, Harmannus Franciscus Maria

IPC: H01L21/60 ,  H01L21/48 ,  B23K3/06 ,  B23K35/26 ,  C09J9/02 ,  H01L23/00 ,  H01L33/62 ,  H01L23/498 ,  H01L23/485 ,  H01L21/683

CPC classification number: H01L24/83 ,  B23K35/02 ,  B23K35/26 ,  B23K35/262 ,  C09J5/06 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/4853 ,  H01L21/50 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/4985 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L33/62 ,  H01L2021/60277 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1111 ,  H01L2224/1133 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14131 ,  H01L2224/27001 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29034 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/742 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/81862 ,  H01L2224/83192 ,  H01L2224/83224 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/381 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/2076 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method is provided for assembly of a micro-electronic component comprising the steps of: providing a conductive die bonding material comprising of a conductive thermosettable resin material or flux based solder and a dynamic release layer adjacent to the conductive thermoplastic material die bonding material layer; and impinging a laser beam on the dynamic release layer adjacent to the die bonding material layer; in such a way that the dynamic release layer is activated to direct conductive die bonding material matter towards the pad structure to be treated to cover a selected part of the pad structure with a transferred conductive die bonding material; and wherein the laser beam is restricted in timing and energy, in such a way that the die bonding material matter remains thermosetting. Accordingly adhesive matter can be transferred while preventing that the adhesive is rendered ineffective by thermal overexposure in the transferring process.

Abstract translation: 提供了一种用于组装微电子部件的方法，包括以下步骤：提供包含导电热固性树脂材料或焊剂基焊料的导电芯片接合材料和邻近导电热塑性材料芯片接合材料层的动态剥离层; 并将激光束照射在与芯片接合材料层相邻的动态释放层上; 使得动态释放层被激活以将导电芯片接合材料物质朝向要处理的焊盘结构物以通过转移的导电芯片接合材料覆盖所述焊盘结构的选定部分; 并且其中激光束的定时和能量受到限制，使得芯片接合材料物质保持热固化。 因此，可以转移粘合剂，同时防止粘合剂在转印过程中通过热过度曝光而变得无效。

公开(公告)号：WO2008121752A1

公开(公告)日：2008-10-09

申请号：PCT/US2008/058553

申请日：2008-03-28

Applicant: SUSS MICROTEC, INC.

Inventor： GORMLEY, Gerard ,  GORUN, Patrick ,  DAVIDSON, Michael

IPC: H01L21/60

CPC classification number: B23K3/0623 ,  B23K2201/40 ,  B23K2201/42 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/742 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2224/131 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H05K3/3436 ,  H05K2203/0126 ,  H01L2224/0401

Abstract: An improved apparatus for filling patterned mold cavities formed on a surface of a mold structure with solder includes an injector head assembly comprising a solder reservoir having a bottom surface with an elongated slot for injecting solder into the mold cavities and a carriage assembly configured to carry and scan the mold structure under the injector head assembly. The mold structure is brought into contact with the solder reservoir bottom surface and a seal is formed between an area of the solder reservoir bottom surface surrounding the elongated slot and the mold structure surface and then the mold structure is scanned under the injector head assembly in a first direction from a starting position to a finish position for filling the mold cavities and in a second direction opposite to the first direction for returning back from the finish position to the starting position.

Abstract translation: 用于填充在模具结构的表面上形成的图案化模腔的改进装置包括：具有焊料储存器的注射器头组件，所述焊料储存器具有底表面，该底表面具有用于将焊料注入到模腔中的细长槽;以及支架组件， 扫描注射器头部组件下方的模具结构。 模具结构与焊料储存器底表面接触，并且在围绕细长槽的焊料储存器底表面的区域和模具结构表面之间形成密封件，然后在注射器头部组件下方扫描模具结构 从起始位置到完成位置的第一方向，用于填充模具腔，并且在与第一方向相反的第二方向上从终点位置返回到起始位置。

公开(公告)号：WO2015162405A1

公开(公告)日：2015-10-29

申请号：PCT/GB2015/051099

申请日：2015-04-10

Applicant: ALPHA METALS, INC. ,  SETNA, Rohan P

Inventor： SETNA, Rohan P ,  CHAKI, Nirmalya Kumar ,  ROY, Poulami Sengupta ,  SARKAR, Siuli ,  MUKHERJEE, Sutapa

IPC: B22F1/00 ,  B22F1/02 ,  B22F9/24 ,  C09C1/00 ,  C09C3/08

CPC classification number: B22F9/24 ,  B22F1/0014 ,  B22F1/0074 ,  B22F1/025 ,  B22F9/04 ,  B22F2009/043 ,  B22F2301/10 ,  B22F2301/255 ,  C01P2004/20 ,  C01P2004/32 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/80 ,  C09C1/62 ,  C09C1/622 ,  C09C1/627 ,  C09J1/00 ,  C09J9/02 ,  C09J11/04 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/111 ,  H01L2224/1111 ,  H01L2224/1131 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/11438 ,  H01L2224/1144 ,  H01L2224/11505 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13387 ,  H01L2224/1339 ,  H01L2224/13439 ,  H01L2224/1349 ,  H01L2224/13499 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2731 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27438 ,  H01L2224/2744 ,  H01L2224/27505 ,  H01L2224/29011 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/32227 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8184 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/83 ,  H01L2224/81

Abstract: A method for manufacturing metal powder comprising: providing a basic metal salt solution; contacting the basic metal salt solution with a reducing agent to precipitate metal powder therefrom; and recovering precipitated metal powder from the solvent.

Abstract translation: 一种制造金属粉末的方法，包括：提供碱金属盐溶液; 使碱金属盐溶液与还原剂接触以从其中沉淀金属粉末; 并从溶剂中回收沉淀的金属粉末。

公开(公告)号：WO2015054413A1

公开(公告)日：2015-04-16

申请号：PCT/US2014/059737

申请日：2014-10-08

Applicant: INVENSAS CORPORATION

Inventor： UZOH, Cyprian, Emeka ,  KATKAR, Rajesh

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L24/11 ,  H01L21/3213 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/0348 ,  H01L2224/0362 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05664 ,  H01L2224/05686 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11013 ,  H01L2224/1111 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/81815 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00

Abstract: An apparatus relating generally to a substrate is disclosed. In this apparatus, a first metal layer is on the substrate. The first metal layer has an opening. The opening of the first metal layer has a bottom and one or more sides extending from the bottom. A second metal layer is on the first metal layer. The first metal layer and the second metal layer provide a bowl-shaped structure. An inner surface of the bowl-shaped structure is defined responsive to the opening of the first metal layer and the second metal layer thereon. The opening of the bowl-shaped structure is configured to receive and at least partially retain a bonding material during a reflow process.

Abstract translation: 公开了一般涉及基板的装置。 在该装置中，第一金属层位于基板上。 第一金属层具有开口。 第一金属层的开口具有从底部延伸的底部和一个或多个侧面。 第二金属层位于第一金属层上。 第一金属层和第二金属层提供碗形结构。 碗形结构的内表面是响应于其上的第一金属层和第二金属层的开口而定义的。 碗形结构的开口构造成在回流过程期间接收并且至少部分地保持接合材料。

公开(公告)号：WO2013025573A2

公开(公告)日：2013-02-21

申请号：PCT/US2012/050494

申请日：2012-08-12

Applicant: ADVANCED ANALOGIC TECHNOLOGIES, INC. ,  WILLIAMS, Richard, K. ,  LIN, Keng, Hung

Inventor： WILLIAMS, Richard, K. ,  LIN, Keng, Hung

IPC: H01L23/488 ,  H01L23/495

CPC classification number: H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49572 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/11505 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13186 ,  H01L2224/13187 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/14131 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/81191 ,  H01L2224/81211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/05442 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/05552

Abstract: A semiconductor die is solder bump-bonded to a leadframe or circuit board using solder balls having cores made of a material with a melting temperature higher than the melting temperature of the solder to ensure that in the finished structure the die is parallel to the leadframe or circuit hoard.

Abstract translation: 半导体管芯利用具有由熔化温度高于焊料的熔化温度的材料制成的芯的焊球来焊接凸点结合到引线框架或电路板，以确保在完成的结构 芯片平行于引线框架或电路板。

公开(公告)号：WO2017079424A1

公开(公告)日：2017-05-11

申请号：PCT/US2016/060309

申请日：2016-11-03

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： OLIVER, William, D. ,  KERMAN, Andrew, J. ,  DAS, Rabindra, N. ,  YOST, Donna-Ruth, W. ,  ROSENBERG, Danna ,  GOUKER, Mark, A.

IPC: H01L23/48 ,  H01L23/538 ,  H01L39/04

CPC classification number: H01L27/18 ,  B82Y10/00 ,  G06N99/002 ,  H01L21/02063 ,  H01L21/02282 ,  H01L21/02345 ,  H01L22/26 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L39/02 ,  H01L39/025 ,  H01L39/223 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0558 ,  H01L2224/05609 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/08503 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/11462 ,  H01L2224/11474 ,  H01L2224/117 ,  H01L2224/11902 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/80896 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

Abstract: Described are concepts, systems, circuits and techniques related to shielded through via structures and methods for fabricating such shielded through via structures. The described shielded through via structures and techniques allow for assembly of multi-layer semiconductor structures including one or more superconducting semiconductor structures (or integrated circuits).

Abstract translation: 描述了涉及屏蔽通孔结构的概念，系统，电路和技术以及制造这种屏蔽通孔结构的方法。 所描述的屏蔽式通孔结构和技术允许组装包括一个或多个超导半导体结构（或集成电路）的多层半导体结构。

公开(公告)号：WO2017079417A1

公开(公告)日：2017-05-11

申请号：PCT/US2016/060296

申请日：2016-11-03

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： OLIVER, William, D. ,  KERMAN, Andrew, J. ,  DAS, Rabindra, N. ,  YOST, Donna-Ruth, W. ,  ROSENBERG, Danna ,  GOUKER, Mark, A.

IPC: H01L21/312 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/482 ,  H01L23/538

CPC classification number: H01L27/18 ,  B82Y10/00 ,  G06N99/002 ,  H01L21/02063 ,  H01L21/02282 ,  H01L21/02345 ,  H01L22/26 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L39/02 ,  H01L39/025 ,  H01L39/223 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0558 ,  H01L2224/05609 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/08503 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/11462 ,  H01L2224/11474 ,  H01L2224/117 ,  H01L2224/11902 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/80896 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

Abstract: A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

Abstract translation: 多层半导体结构包括第一半导体结构和第二半导体结构，其中第一和第二半导体结构中的至少一个被设置为超导半导体结构。 多层半导体结构还包括一个或多个互连结构。 每个互连结构设置在第一和第二半导体结构之间并且耦合到设置在第一和第二半导体结构上的相应的互连焊盘。 另外，每个互连结构包括多个互连部分。 至少一个互连部分包括至少一个超导材料和/或部分超导材料。

公开(公告)号：WO2017079394A1

公开(公告)日：2017-05-11

申请号：PCT/US2016/060263

申请日：2016-11-03

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： OLIVER, William, D. ,  KERMAN, Andrew, J. ,  DAS, Rabindra, N. ,  YOST, Donna-Ruth, W. ,  ROSENBERG, Danna ,  GOUKER, Mark, A.

IPC: H01L21/312 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/482 ,  H01L23/538

CPC classification number: H01L27/18 ,  B82Y10/00 ,  G06N99/002 ,  H01L21/02063 ,  H01L21/02282 ,  H01L21/02345 ,  H01L22/26 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L39/02 ,  H01L39/025 ,  H01L39/223 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0558 ,  H01L2224/05609 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/08503 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/11462 ,  H01L2224/11474 ,  H01L2224/117 ,  H01L2224/11902 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/80896 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

Abstract: A method of fabricating an interconnect structure includes providing a semiconductor structure and performing a first spin resist and bake cycle. The first spin resist and bake cycle includes applying a first predetermined amount of a resist material over one or more portions of the semiconductor structure and baking the semiconductor structure to form a first resist layer portion of a resist layer. The method also includes performing a next spin resist and bake cycle. The next spin resist and bake cycle includes applying a next predetermined amount of the resist material and baking the semiconductor structure to form a next resist layer portion of the resist layer. The method additionally includes depositing a conductive material in an opening formed in the resist layer and forming a conductive structure from the conductive material. An interconnect structure is also provided.

Abstract translation: 制造互连结构的方法包括提供半导体结构并执行第一旋转抗蚀剂和烘烤循环。 第一旋转抗蚀剂和烘烤循环包括在半导体结构的一个或多个部分上施加第一预定量的抗蚀剂材料并烘烤半导体结构以形成抗蚀剂层的第一抗蚀剂层部分。 该方法还包括执行下一个旋转抗蚀剂和烘烤循环。 接下来的旋涂抗蚀剂和烘烤循环包括施加下一个预定量的抗蚀剂材料并烘烤半导体结构以形成抗蚀剂层的下一个抗蚀剂层部分。 该方法另外包括在形成于抗蚀剂层中的开口中沉积导电材料并且由导电材料形成导电结构。 还提供互连结构。

公开(公告)号：WO2016031989A1

公开(公告)日：2016-03-03

申请号：PCT/JP2015/074525

申请日：2015-08-28

Applicant: 日鉄住金マイクロメタル株式会社 ,  新日鉄住金マテリアルズ株式会社

Inventor： 山田　隆 ,  小田　大造 ,  榛原　照男 ,  寺嶋　晋一

IPC: H01L21/60 ,  H01L23/12 ,  H01L23/50

CPC classification number: H01L24/13 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K2201/38 ,  B23K2201/42 ,  B23K2203/12 ,  C22C9/00 ,  H01L23/12 ,  H01L23/50 ,  H01L24/11 ,  H01L2224/1111 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647

Abstract: 　本発明は、半導体チップにＣｕピラーを設けて電気的接続を行うに際し、めっき法でＣｕピラーを形成する方法に比較してＣｕピラーの高さ／直径比を大きくし、生産性を向上し、Ｃｕピラーの高さを高くすることを可能とし、Ｃｕピラーの信頼性を向上することを課題とする。　本発明は、課題を解決するために、予めＣｕピラー用の材料を円柱状形成物として形成しておき、この円柱状形成物を半導体チップ上の電極に接続してＣｕピラーとする。これにより、Ｃｕピラーの高さ／直径比を２．０以上とすることが可能となる。電気めっき法を用いないので、Ｃｕピラー製造に要する所要時間が短く、生産性を向上できる。また、Ｃｕピラー高さを２００μｍ以上に高くすることができるので、モールドアンダーフィルのために好適である。成分を自由に調整することができるため、信頼性の高いＣｕピラーの合金成分設計を容易に行うことができる。

Abstract translation: 本发明解决了当将Cu柱与半导体芯片提供并电连接时，增加Cu柱的高度/直径比，提高生产率，提高Cu柱的高度，提高Cu柱的可靠性， 与通过电镀形成Cu柱的方法相比。 为了解决上述问题，将Cu柱的材料预先形成为圆筒状的成形体，将该圆筒状的成形体与半导体芯片上的电极电连接，得到Cu支柱。 结果，Cu柱的高度/直径比可以至少为2.0。 不使用电镀，因此可以缩短Cu柱生产所需的时间并提高生产率。 此外，Cu柱高度可以至少为200μm，使得Cu柱适合于模制底部填充。 组件可以自由调整，从而可以方便地设计合金部件，用于高可靠性的Cu支柱。

公开(公告)号：WO2016094721A1

公开(公告)日：2016-06-16

申请号：PCT/US2015/065098

申请日：2015-12-10

Applicant: QUALCOMM INCORPORATED

Inventor： NOVESKI, Vladimir ,  SHAH, Milind Pravin ,  KUMAR, Rajneesh

IPC: H01L23/48 ,  H01L21/60 ,  H01L21/48

CPC classification number: H01L23/5283 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/03602 ,  H01L2224/03914 ,  H01L2224/05546 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1111 ,  H01L2224/11334 ,  H01L2224/11438 ,  H01L2224/13007 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16014 ,  H01L2224/16111 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/2711 ,  H01L2224/27438 ,  H01L2224/29006 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81101 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/2064 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An integrated device package that includes a die, a substrate, a fill and a conductive interconnect. The die includes a pillar, where the pillar has a first pillar width. The substrate (e.g., package substrate, interposer) includes a dielectric layer and a substrate interconnect (e.g., surface interconnect, embedded interconnect). The fill is located between the die and the substrate. The conductive interconnect is located within the fill. The conductive interconnect includes a first interconnect width that is about the same or less than the first pillar width. The conductive interconnect is coupled to the pillar and the substrate interconnect. The fill is a non-conductive photosensitive material. The fill is a photosensitive film. The substrate interconnect includes a second interconnect width that is equal or greater than the first pillar width. The conductive interconnect includes one of at least a paste, a solder and/or an enhanced solder comprising a polymeric material.

Abstract translation: 一种集成器件封装，其包括管芯，衬底，填充物和导电互连。 模具包括支柱，其中柱具有第一柱宽度。 衬底（例如，封装衬底，插入器）包括电介质层和衬底互连（例如，表面互连，嵌入式互连）。 填充物位于管芯和衬底之间。 导电互连位于填充物内。 导电互连包括大约等于或小于第一柱宽度的第一互连宽度。 导电互连耦合到柱和衬底互连。 填充物是非导电感光材料。 填充物是感光膜。 衬底互连包括等于或大于第一柱宽度的第二互连宽度。 导电互连包括至少一种包含聚合材料的糊状物，焊料和/或增强焊料中的至少一种。