公开(公告)号：WO2007148836A2

公开(公告)日：2007-12-27

申请号：PCT/JP2007/063063

申请日：2007-06-22

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  INAMOTO, Yoshimasa ,  NAKATSUJI, Hachiro ,  INOUE, Kazuhiro ,  TSUJI, Hiroyuki

Inventor： INAMOTO, Yoshimasa ,  NAKATSUJI, Hachiro ,  INOUE, Kazuhiro ,  TSUJI, Hiroyuki

CPC classification number: H05H1/24 ,  B23K11/0006 ,  B23K20/10 ,  B23K35/38 ,  B23K35/383 ,  H01L24/75 ,  H01L24/81 ,  H01L2221/68313 ,  H01L2224/75 ,  H01L2224/75302 ,  H01L2224/75743 ,  H01L2224/81009 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81075 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H05K3/3489 ,  H05K2203/0195 ,  H05K2203/082 ,  H05K2203/086 ,  H05K2203/095

Abstract: An electrode bonding method according to the present invention includes: a plasma cleaning step of irradiating an electrode surface (3) to be cleaned of at least either one of a part (1), such as a semiconductor device, and a substrate (10) with atmospheric pressure plasma (8) for cleaning; an inert gas atmosphere maintaining step of covering the electrode surface (3) to be cleaned and its vicinity with a first inert gas (4) before the irradiation of the atmospheric pressure plasma (8) is ended, and maintaining that state even thereafter; and a bonding step of bonding an electrode of the part (1) and an electrode on the substrate (10) before the inert gas atmosphere maintaining step is ended. The electrode surface (3) is thereby plasma-cleaned without the possibility of damaging the part (1) to be bonded to the substrate (10), and the cleaned state is maintained while bonding the electrodes to provide an electrode bonding state of high bonding force and high reliability.

Abstract translation: 根据本发明的电极接合方法包括：等离子体清洗步骤，对诸如半导体器件的部分（1）和衬底（10）中的至少任一个照射待清洁的电极表面（3） 用大气压等离子体（8）清洗; 在大气压等离子体（8）的照射之前，用第一惰性气体（4）覆盖待清洁电极面（3）及其附近的惰性气体气氛保持步骤结束，此后保持该状态; 以及在惰性气体保持步骤结束之前将部分（1）的电极和基板（10）上的电极接合的接合步骤。 电极表面（3）由此进行等离子体清洁，而不会损坏要与基板（10）接合的部分（1），并且在粘合电极的同时保持清洁状态以提供高接合的电极接合状态 强力和高可靠性。

公开(公告)号：WO2004071700A3

公开(公告)日：2005-04-21

申请号：PCT/US2004002006

申请日：2004-02-06

Applicant: ZIPTRONIX INC ,  TONG QIN-YI ,  ENQUIST PAUL M ,  ROSE ANTHONY SCOT

Inventor： TONG QIN-YI ,  ENQUIST PAUL M ,  ROSE ANTHONY SCOT

IPC: H01L21/60 ,  H01L21/98 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01L21/76251 ,  B23K20/02 ,  H01L21/481 ,  H01L24/09 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/28 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/90 ,  H01L25/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13011 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/80801 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81014 ,  H01L2224/81136 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/8121 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/83095 ,  H01L2224/8319 ,  H01L2224/8334 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83907 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01003 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/351 ,  Y10T29/49126 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05124 ,  H01L2224/05147

Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

Abstract translation: 一种粘结器件结构，包括具有第一组金属接合焊盘的第一衬底，优选地连接到器件或电路，并且具有与第一衬底上的金属焊盘相邻的第一非金属区域，第二衬底具有第二衬底 一组金属接合焊盘与第一组金属焊盘对准，优选地连接到器件或电路，并且具有与第二衬底上的金属焊盘相邻的第二非金属区域，以及位于第二衬底之间的接触接合界面 通过第一非金属区域与第二非金属区域的接触接合形成的第一和第二组金属接合焊盘。 第一和第二基板中的至少一个可能弹性变形。

公开(公告)号：WO2017105763A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/062734

申请日：2016-11-18

Applicant: INTEL CORPORATION

Inventor： LU, Donglai David ,  YAO, Jimin ,  MALLIK, Amrita ,  KOSTIEW, George S. ,  LIFF, Shawna M.

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/13 ,  H01L24/75 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/7525 ,  H01L2224/753 ,  H01L2224/75901 ,  H01L2224/7592 ,  H01L2224/75981 ,  H01L2224/81013 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/00015 ,  H01L2924/01001 ,  H01L2924/01002 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01018 ,  H01L2924/01036 ,  H01L2924/01054 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81011 ,  H01L2224/81024 ,  H01L2924/014

Abstract: Described herein are devices and techniques for thermocompression bonding. A device can include a housing, a platform, and a plasma jet. The housing can define a chamber. The platform can be located within the chamber and can be proximate a thermocompression chip bonder. The plasma jet can be located proximate the platform. The plasma jet can be movable about the platform. The plasma jet can include a nozzle arranged to direct a plasma gas onto the platform. Also described are other embodiments for thermocompression bonding.

Abstract translation: 这里描述的是用于热压接的装置和技术。 装置可以包括壳体，平台和等离子体射流。 外壳可以限定一个腔室。 该平台可以位于腔室内并且可以靠近热压贴片机。 等离子体射流可以位于平台附近。 等离子射流可以围绕平台移动。 等离子体射流可以包括布置成将等离子体气体引导到平台上的喷嘴。 还描述了热压粘合的其他实施例。

公开(公告)号：WO02015258A1

公开(公告)日：2002-02-21

申请号：PCT/JP2001/006552

申请日：2001-07-30

IPC: H01L21/56 ,  H01L21/60

CPC classification number: H01L24/81 ,  H01L21/563 ,  H01L24/27 ,  H01L24/29 ,  H01L24/75 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/751 ,  H01L2224/7515 ,  H01L2224/75753 ,  H01L2224/81 ,  H01L2224/81013 ,  H01L2224/81075 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10T156/1052 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A first object with an electrode is joined to a second object with an electrode fluxlessly by applying an energy wave or an energy particle beam to the electrode of at least one of the objects so as to clean it, coating the electrode with a nonconductive paste while maintaining a special gas atmosphere, and joining the objects with the nonconductive paste surface interposed therebetween. The primary and secondary oxidations of the objects are effectively prevented, thereby enabling fluxless joining. The mounting steps are simplified and the quality of the joined objects is improved.

Abstract translation: 具有电极的第一物体通过向至少一个物体的电极施加能量波或能量粒子束而无电极地接合到具有电极的第二物体，以便清洁它，用非导电浆涂覆电极，同时 保持特殊的气体气氛，并且在其间插入有非导电糊表面的物体。 有效地防止了物体的主要和次要氧化，从而实现无助焊接。 安装步骤简化，并且改善了接合物体的质量。

公开(公告)号：WO2005071735A1

公开(公告)日：2005-08-04

申请号：PCT/JP2005/000788

申请日：2005-01-21

Applicant: 有限会社ボンドテック ,  岡田 益明 ,  中居 誠也

Inventor： 岡田 益明 ,  中居 誠也

IPC: H01L21/60

CPC classification number: G02B6/4232 ,  B23K20/023 ,  B23K20/16 ,  B23K20/22 ,  B23K20/233 ,  B23K2201/42 ,  B23K2203/12 ,  G02B6/4214 ,  H01L21/67092 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48463 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/75822 ,  H01L2224/7592 ,  H01L2224/81009 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81121 ,  H01L2224/81205 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02292 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

Abstract: 　高真空下でのエネルギー波処理及び連続した高真空化での接合を必要とせず、面精度を数ｎｍオーダーまで必要としない実用化できる固層で常温接合する接合技術を提供する。 　エネルギー波による表面活性化処理後、すぐには付着物層も薄いので、該付着物層を押しつぶして接合すれば、接合界面は広がり、接合表面に新生面が現れ、被接合物どうしが接合される。付着物層を押しつぶし易くするためには、被接合物が有する接合部の接合金属の硬度が低くなければならない。本発明者らによる種々の実験の結果、接合部の硬度がビッカース硬度で２００Ｈｖ以下であることが、常温接合に特に有効であることを見出した。

Abstract translation: 能够在实用的固体层上冷连接的接合技术，而不需要在高真空下进行能量波加工，高真空下的连续接合以及几纳米的面积精度。 当通过能量波表面激活后立即还原的沉积层被粉碎以进行接合时，接合界面扩展，并且在接合表面上出现再生表面以允许相对构件接合。 为了使沉积层易于破碎，相对构件的接合部处的接合金属的硬度必须低。 本发明人进行的各种实验发现，在高达200Hv的接合部位，维氏硬度对冷连接特别有效。

公开(公告)号：WO2004071700A2

公开(公告)日：2004-08-26

申请号：PCT/US2004/002006

申请日：2004-02-06

Applicant: ZIPTRONIX, INC. ,  TONG, Qin-Yi ,  ENQUIST, Paul, M. ,  ROSE, Anthony, Scot

Inventor： TONG, Qin-Yi ,  ENQUIST, Paul, M. ,  ROSE, Anthony, Scot

IPC: B23K

CPC classification number: H01L21/76251 ,  B23K20/02 ,  H01L21/481 ,  H01L24/09 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/28 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/90 ,  H01L25/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13011 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/80801 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81014 ,  H01L2224/81136 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/8121 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/83095 ,  H01L2224/8319 ,  H01L2224/8334 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83907 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01003 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/351 ,  Y10T29/49126 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05124 ,  H01L2224/05147

Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

Abstract translation: 一种粘结器件结构，包括具有第一组金属接合焊盘的第一衬底，优选地连接到器件或电路，并且具有与第一衬底上的金属焊盘相邻的第一非金属区域，第二衬底具有第二衬底 一组金属接合焊盘与第一组金属焊盘对准，优选地连接到器件或电路，并且具有与第二衬底上的金属焊盘相邻的第二非金属区域，以及位于第二衬底之间的接触接合界面 通过第一非金属区域与第二非金属区域的接触接合形成的第一和第二组金属接合焊盘。 第一和第二基板中的至少一个可能弹性变形。

公开(公告)号：WO2003092052A1

公开(公告)日：2003-11-06

申请号：PCT/JP2003/005119

申请日：2003-04-22

Applicant: 東レエンジニアリング株式会社 ,  山内 朗

Inventor： 山内 朗

IPC: H01L21/02

CPC classification number: H01L24/81 ,  H01L21/302 ,  H01L24/75 ,  H01L2224/16 ,  H01L2224/75 ,  H01L2224/75102 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/7901 ,  H01L2224/81013 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14

Abstract: A packaging method and a packaging system for bonding articles to each other after cleaning the bonding face of at least one article, characterized in that cleaning is performed by irradiating the bonding face with an energy wave or energy particles while heating. Since occurrence of charge up damage can be prevented while attaining a sufficiently high cleaning effect, alignment and bonding can be carried out at normal temperature or a slightly lower temperature and thereby the cleaning effect can be enhanced while ensuring highly accurate packaging.

Abstract translation: 一种包装方法和用于在清洁至少一件物品的粘合面之后将制品彼此粘合的包装系统，其特征在于，通过在加热时用能量波或能量粒子照射所述接合面进行清洁。 由于在获得足够高的清洁效果的同时可以防止发生充电损伤，因此可以在常温或稍低的温度下进行取向和接合，从而可以提高清洁效果，同时确保高精度的包装。

公开(公告)号：WO2017105524A1

公开(公告)日：2017-06-22

申请号：PCT/US2015/068082

申请日：2015-12-30

Applicant: GOOGLE INC. ,  MUTUS, Joshua Yousouf ,  LUCERO, Erik Anthony

Inventor： MUTUS, Joshua Yousouf ,  LUCERO, Erik Anthony

IPC: H01L27/18 ,  H01L23/498

CPC classification number: H01L27/18 ,  H01L23/49816 ,  H01L23/49888 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0362 ,  H01L2224/0384 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05179 ,  H01L2224/05186 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/1145 ,  H01L2224/13023 ,  H01L2224/13109 ,  H01L2224/13116 ,  H01L2224/13164 ,  H01L2224/13179 ,  H01L2224/13183 ,  H01L2224/16145 ,  H01L2224/81013 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81409 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/00014 ,  H01L2924/04941

Abstract: A device (100) includes a first chip (104) having a first circuit element (112), a first interconnect pad (116) in electrical contact (118) with the first circuit element, and a barrier layer (120) on the first interconnect pad, a superconducting bump bond (106) on the barrier layer, and a second chip (102) joined to the first chip by the superconducting bump bond, the second chip having a quantum circuit element (108), in which the superconducting bump bond provides an electrical connection between the first circuit element and the quantum circuit element.

Abstract translation: 设备（100）包括具有第一电路元件（112）的第一芯片（104），与第一电路元件电接触（118）的第一互连焊盘（116），以及 所述第一互连焊盘上的阻挡层（120），所述阻挡层上的超导凸点结合（106）以及通过所述超导凸点结合与所述第一芯片结合的第二芯片（102），所述第二芯片具有量子电路元件 其中超导凸块接合提供第一电路元件和量子电路元件之间的电连接。

公开(公告)号：WO2014078138A1

公开(公告)日：2014-05-22

申请号：PCT/US2013/068630

申请日：2013-11-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： SYLVESTRE, Julien

IPC: H01L23/48 ,  H01L23/28 ,  H01L23/34

CPC classification number: H01L24/17 ,  H01L21/50 ,  H01L21/563 ,  H01L22/14 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/1184 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/17517 ,  H01L2224/29286 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81013 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83855 ,  H01L2224/92125 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16251 ,  H01L2924/182 ,  H01L2924/3701 ,  H01L2924/00 ,  H01L2924/11

Abstract: A method of assembling a semiconductor chip (10) to a substrate (14) wherein at least one of the semiconductor chip (10) and substrate (14) comprise solder bumps (12, 18). The method includes aligning the semiconductor chip (10) with the substrate (14); applying a compression force to the semiconductor chip (10) to cause the solder bumps (12, 18) to deform between the semiconductor chip pads (11) and the substrate pads (20), the compression force being applied while the semiconductor chip (10) and substrate (14) are held at a temperature above room temperature and below a temperature at which any liquid will form in at least one of the solder bumps (12, 18); then applying an underfill material (26) to fill the gap between the chip (10) and substrate (14); and then heating the assembled semiconductor chip (10) and substrate (14) to an elevated temperature to cause the solder bumps (12, 18) to melt and reflow and form a metallurgical bond between the semiconductor chip pads (11) and the substrate pads (20).

Abstract translation: 一种将半导体芯片（10）组装到衬底（14）的方法，其中半导体芯片（10）和衬底（14）中的至少一个包括焊料凸块（12,18）。 该方法包括使半导体芯片（10）与衬底（14）对准; 对半导体芯片（10）施加压缩力，使得焊料凸块（12,18）在半导体芯片焊盘（11）和衬底焊盘（20）之间变形，在半导体芯片（10） ）和衬底（14）保持在高于室温并且低于在至少一个焊料凸块（12,18）中将形成任何液体的温度的温度）。 然后施加底部填充材料（26）以填充所述芯片（10）和所述基板（14）之间的间隙; 然后将组装的半导体芯片（10）和衬底（14）加热到升高的温度，以使焊料凸点（12,18）熔化和回流并在半导体芯片焊盘（11）和衬底焊盘之间形成冶金结合 （20）。

公开(公告)号：WO2012009612A3

公开(公告)日：2012-04-19

申请号：PCT/US2011044137

申请日：2011-07-15

Applicant: ONTOS EQUIPMENT SYSTEMS INC ,  SCHULTE ERIC FRANK

Inventor： SCHULTE ERIC FRANK

IPC: B23K1/20 ,  B23K31/02

CPC classification number: B23K1/20 ,  B32B38/0008 ,  B32B2310/14 ,  B32B2457/00 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/11334 ,  H01L2224/11831 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014

Abstract: A method of removing oxidation from certain metallic contact surfaces utilizing a combination of relatively simple and inexpensive off-the-shelf equipment and specific chemistry. The method being a very rapid dry process which does not require a vacuum or containment chamber, or toxic gasses/chemicals, and does not damage sensitive electronic circuits or components. Additionally, the process creates a passivation layer on the surface of the metallic contact which inhibits further oxidation while allowing rapid and complete bonding, even many hours after surface treatment, without having to remove the passivation layer. The process utilizes a room-ambient plasma applicator with hydrogen, nitrogen, and inert gasses.

Abstract translation: 使用相对简单且廉价的现成设备和特定化学物质的组合从某些金属接触表面除去氧化的方法。 该方法是非常快速的干法，其不需要真空或容纳室，或有毒气体/化学物质，并且不损坏敏感的电子电路或部件。 此外，该方法在金属接触面的表面上产生钝化层，其抑制进一步氧化，同时允许快速且完全的接合，甚至在表面处理后几个小时，而不必去除钝化层。 该方法利用具有氢，氮和惰性气体的室内等离子体施加器。