公开(公告)号：US10699901B2

公开(公告)日：2020-06-30

申请号：US15988981

申请日：2018-05-24

申请人： LONGITUDE FLASH MEMORY SOLUTIONS LTD.

发明人： Frederick B. Jenne ,  Sagy Charel Levy ,  Krishnaswamy Ramkumar

IPC分类号： H01L21/336 ,  H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/66 ,  H01L29/792 ,  H01L21/3105 ,  H01L29/04 ,  H01L29/16 ,  H01L29/423 ,  H01L29/49

摘要： A method of scaling a nonvolatile trapped-charge memory device and the device made thereby is provided. In an embodiment, the method includes forming a channel region including polysilicon electrically connecting a source region and a drain region in a substrate. A tunneling layer is formed on the substrate over the channel region by oxidizing the substrate to form an oxide film and nitridizing the oxide film. A multi-layer charge trapping layer including an oxygen-rich first layer and an oxygen-lean second layer is formed on the tunneling layer, and a blocking layer deposited on the multi-layer charge trapping layer. In one embodiment, the method further includes a dilute wet oxidation to densify a deposited blocking oxide and to oxidize a portion of the oxygen-lean second layer.

公开(公告)号：US10043657B2

公开(公告)日：2018-08-07

申请号：US15609864

申请日：2017-05-31

申请人： Lam Research Corporation

发明人： Shankar Swaminathan ,  Frank L. Pasquale ,  Adrien LaVoie

IPC分类号： H01L21/02 ,  H01L43/12 ,  H01L43/02 ,  H01L45/00 ,  H01L43/08 ,  H01J37/32 ,  H01L21/314 ,  H01L21/67 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  H01L21/31 ,  H01L27/22 ,  H01L27/24

CPC分类号： H01L21/02186 ,  C23C16/045 ,  C23C16/405 ,  C23C16/45542 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32449 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31 ,  H01L21/3141 ,  H01L21/67005 ,  H01L27/222 ,  H01L27/2463 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L45/06 ,  H01L45/12 ,  H01L45/141 ,  H01L45/16

摘要： The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction.

公开(公告)号：US10026607B2

公开(公告)日：2018-07-17

申请号：US15216908

申请日：2016-07-22

申请人： Hitachi Kokusai Electric Inc.

发明人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： C23C16/00 ,  H01L21/02 ,  C23C16/455 ,  H01L21/314 ,  H01L21/318 ,  C23C16/46 ,  C23C16/52 ,  C23C16/50 ,  C23C14/54 ,  C23C28/00 ,  C23C16/02 ,  H01L21/67

CPC分类号： H01L21/0228 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

公开(公告)号：US09997641B2

公开(公告)日：2018-06-12

申请号：US15051279

申请日：2016-02-23

申请人： Cypress Semiconductor Corporation

发明人： Fredrick B. Jenne ,  Sagy Charel Levy ,  Krishnaswamy Ramkumar

IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/04 ,  H01L29/16 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L29/792 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/28282 ,  H01L21/3105 ,  H01L21/3143 ,  H01L29/04 ,  H01L29/16 ,  H01L29/42364 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/515 ,  H01L29/518 ,  H01L29/66833

摘要： A method of scaling a nonvolatile trapped-charge memory device and the device made thereby is provided. In an embodiment, the method includes forming a channel region including polysilicon electrically connecting a source region and a drain region in a substrate. A tunneling layer is formed on the substrate over the channel region by oxidizing the substrate to form an oxide film and nitridizing the oxide film. A multi-layer charge trapping layer including an oxygen-rich first layer and an oxygen-lean second layer is formed on the tunneling layer, and a blocking layer deposited on the multi-layer charge trapping layer. In one embodiment, the method further includes a dilute wet oxidation to densify a deposited blocking oxide and to oxidize a portion of the oxygen-lean second layer.

公开(公告)号：US09972583B2

公开(公告)日：2018-05-15

申请号：US13959601

申请日：2013-08-05

申请人： Applied Microstructures, Inc.

发明人： Boris Kobrin ,  Nikunj Dangaria ,  Romuald Nowak ,  Michael T. Grimes

IPC分类号： H01L23/00 ,  H01L21/02 ,  B81C1/00 ,  H01L23/29 ,  B81B3/00 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon the first layer, wherein the second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon the second layer, wherein the third layer is a functional organic-comprising layer, wherein the functional organic-comprising layer is a SAM.

公开(公告)号：US09966251B2

公开(公告)日：2018-05-08

申请号：US14681065

申请日：2015-04-07

申请人： Hitachi Kokusai Electric Inc.

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/54 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

公开(公告)号：US09905414B2

公开(公告)日：2018-02-27

申请号：US15161903

申请日：2016-05-23

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Jill S. Becker ,  Dennis Hausmann ,  Seigi Suh

IPC分类号： C23C16/00 ,  C23C16/06 ,  H01L21/02 ,  C07F9/09 ,  C07F9/11 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/12 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C23C16/30 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L21/316

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

公开(公告)号：US09882039B2

公开(公告)日：2018-01-30

申请号：US13933668

申请日：2013-07-02

申请人： M. Asif Khan ,  Vinod Adivarahan

发明人： M. Asif Khan ,  Vinod Adivarahan

IPC分类号： H01L31/107 ,  H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7783 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/30621 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/3185 ,  H01L29/2003 ,  H01L29/66462

摘要： Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).

公开(公告)号：US09806096B2

公开(公告)日：2017-10-31

申请号：US14944444

申请日：2015-11-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L29/80 ,  H01L21/31 ,  H01L27/12 ,  H01L21/314 ,  H01L21/762 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32 ,  H01L21/20

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

公开(公告)号：US09761437B2

公开(公告)日：2017-09-12

申请号：US14803336

申请日：2015-07-20

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yosuke Ota ,  Yoshiro Hirose

IPC分类号： H01L21/465 ,  H01L21/02 ,  H01L21/314 ,  H01L21/365 ,  C23C16/52 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

CPC分类号： H01L21/02118 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0228

摘要： Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.