摘要:
A BGA (ball grid array) semiconductor package with improved heat dissipation and dehumidification effect is disclosed. The above BGA package is provided with an open through slot on the chip mounting portion of the printed circuit board and/or the heat sink. The above through slot is occluded by neither the heat conductive epoxy resin nor the solder mask but is simply opened, thus directly exposing the bottom surface of the semiconductor chip to the outside of the package and effectively performing heat dissipation and dehumidification without causing any pop corn phenomenon during the dehumidification reflow. The size of the open through slot is not larger than the semiconductor chip. The open through slot is selected from among a rectangular slot, a large circular slot, a plurality of small circular slots, a radial slot, a cross slot or any combination thereof.
摘要:
An integrated circuit package system includes a substrate having an opening provided therein, forming a conductor in the opening having a closed end at the bottom, attaching an integrated circuit die over the substrate, and connecting a die interconnect to the integrated circuit die and the closed end of the conductor.
摘要:
An integrated circuit packaging system includes: an integrated circuit device; a conductive post adjacent the integrated circuit device, the conductive post with a contact surface having characteristics of a shaped platform removed; and an encapsulant around the conductive post and the integrated circuit device with the conductive post extending through the encapsulant and each end of the conductive post exposed from the encapsulant.
摘要:
Methods of forming solder balls for semiconductor packages using film-assisted molding include providing a substrate, forming a plurality of solder balls on the substrate where each solder ball has an initial profile, and coupling a substantially planar film to the solder balls. As an encapsulation is deposited over the substrate and around the solder balls, the substantially planar film and the encapsulation, along with the molding process, can cause each solder ball to morph from its initial profile to a final profile, where the final profile is generally different from the initial profile.
摘要:
An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each including a leadframe interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the leadframe interconnect structure and encapsulant. The package interconnect structure and leadframe interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the leadframe interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the leadframe interconnect structure.
摘要:
A method for manufacturing an integrated circuit package system includes: providing a leadframe; forming a protruding pad on the leadframe; attaching a die to the leadframe; electrically connecting the die to the leadframe; and encapsulating at least portions of the leadframe, the protruding pad, and the die in an encapsulant.
摘要:
A non-leaded integrated circuit package system is provided providing a die paddle of a lead frame, forming a dual row of terminals including outer terminal pads and inner terminal pads, and selectively fusing an extension between the die paddle and instances of the inner terminal pads.
摘要:
A semiconductor package includes a post carrier having a base plate and plurality of conductive posts. A photosensitive encapsulant is deposited over the base plate of the post carrier and around the conductive posts. The photosensitive encapsulant is etched to expose a portion of the base plate of the post carrier. A semiconductor die is mounted to the base plate of the post carrier within the etched portions of the photosensitive encapsulant. A second encapsulant is deposited over the semiconductor die. A first circuit build-up layer is formed over the second encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. The base plate of the post carrier is removed and a second circuit build-up layer is formed over the semiconductor die and the photosensitive encapsulant opposite the first circuit build-up layer. The second circuit build-up layer is electrically connected to the conductive posts.
摘要:
An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each having a leadframe interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the leadframe interconnect structure and encapsulant. The package interconnect structure and leadframe interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the leadframe interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the leadframe interconnect structure.
摘要:
A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.