公开(公告)号：US09437536B1

公开(公告)日：2016-09-06

申请号：US14885466

申请日：2015-10-16

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh ,  Belgacem Haba

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/498 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/04 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1058 ,  H01L2924/1427 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19102 ,  H01L2224/81

Abstract: A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.

Abstract translation: 制造组件的方法可以包括形成限定前表面和后表面的电路结构，以及在后表面上形成衬底。 电路结构的形成可以包括形成耦合到载体的第一介电层。 第一电介质层可以包括构造成与一个或多个微电子元件的触点和第一迹线接合的前触点。 电路结构的形成可以包括通过第一迹线在与前触点耦合的后表面处形成后导电元件。 基板的形成可以包括直接在后表面上形成电介质元件。 电介质元件可以具有面向后导电元件并与其连接的第一导电元件。 电介质元件可以包括与第一导电元件耦合的第二迹线。 基板的形成可以包括在基板的表面上形成端子。

公开(公告)号：US09398700B2

公开(公告)日：2016-07-19

申请号：US13924002

申请日：2013-06-21

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Belgacem Haba ,  Charles G. Woychik ,  Michael Newman ,  Terrence Caskey

IPC: H05K3/30 ,  H05K1/18 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L24/13 ,  H01L21/563 ,  H01L23/564 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/10145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11903 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/1319 ,  H01L2224/14517 ,  H01L2224/1601 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16104 ,  H01L2224/16105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2224/81007 ,  H01L2224/811 ,  H01L2224/81139 ,  H01L2224/8192 ,  H01L2224/83104 ,  H01L2224/9201 ,  H01L2224/9212 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H05K1/181 ,  H05K3/30 ,  Y10T29/4913 ,  H01L2924/00012 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2224/05552

Abstract: Microelectronic assemblies and methods for making the same are disclosed herein. In one embodiment, a method of forming a microelectronic assembly comprises assembling first and second components to have first major surfaces of the first and second components facing one another and spaced apart from one another by a predetermined spacing, the first component having first and second oppositely-facing major surfaces, a first thickness extending in a first direction between the first and second major surfaces, and a plurality of first metal connection elements at the first major surface, the second component having a plurality of second metal connection elements at the first major surface of the second component; and plating a plurality of metal connector regions each connecting and extending continuously between a respective first connection element and a corresponding second connection element opposite the respective first connection element in the first direction.

Abstract translation: 本文公开了微电子组件及其制造方法。 在一个实施例中，形成微电子组件的方法包括组装第一和第二部件以使第一和第二部件的第一主表面彼此面对并且彼此隔开预定间隔，第一部件具有第一和第二相对 主表面，在第一和第二主表面之间沿第一方向延伸的第一厚度和在第一主表面处的多个第一金属连接元件，第二部件在第一主要部分具有多个第二金属连接元件 第二部件的表面; 以及电镀多个金属连接器区域，每个金属连接器区域在第一方向上在相应的第一连接元件和与相应的第一连接元件相对的相应的第二连接元件之间连续延伸。

公开(公告)号：US09397051B2

公开(公告)日：2016-07-19

申请号：US14095704

申请日：2013-12-03

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh

IPC: H01L21/302 ,  H01L23/00 ,  H01L21/3205

CPC classification number: H01L23/562 ,  H01L21/32051 ,  H01L21/78 ,  H01L22/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L2224/0345 ,  H01L2224/05124 ,  H01L2224/05181 ,  H01L2924/12042 ,  H01L2924/00

Abstract: To reduce warpage in at least one area of a wafer, a stress/warpage management layer (810) is formed to over-balance and change the direction of the existing warpage. For example, if the middle of the area was bulging up relative to the area's boundary, the middle of the area may become bulging downward, or vice versa. Then the stress/warpage management layer is processed to reduce the over-balancing. For example, the stress/management layer can be debonded from the wafer at selected locations, or recesses can be formed in the layer, or phase changes can be induced in the layer. In other embodiments, this layer is tantalum-aluminum that may or may not over-balance the warpage; this layer is believed to reduce warpage due to crystal-phase-dependent stresses which dynamically adjust to temperature changes so as to reduce the warpage (possibly keeping the wafer flat through thermal cycling). Other features are also provided.

Abstract translation: 为了减少晶片的至少一个区域中的翘曲，形成应力/翘曲管理层（810）以使现有翘曲的方向超平衡并改变。 例如，如果该地区的中部相对于该地区的边界膨胀，该区域的中部可能会向下膨胀，反之亦然。 然后处理压力/翘曲管理层以减少过度平衡。 例如，应力/管理层可以在选定位置从晶片剥离，或者可以在该层中形成凹陷，或者可以在该层中引起相变。 在其它实施例中，该层是钽 - 铝，其可能或可能不会使翘曲过度平衡; 这一层被认为是由于结晶相依赖的应力而减少翘曲，其动态地适应温度变化，以便减少翘曲（可能通过热循环保持晶片平坦）。 还提供其他功能。

公开(公告)号：US09397038B1

公开(公告)日：2016-07-19

申请号：US14633746

申请日：2015-02-27

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L21/44 ,  H01L23/04 ,  H01L23/52 ,  H01L23/522 ,  H01L49/02 ,  H01L21/768

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract translation: 在具有穿过衬底（104）并且突出在衬底上方的导电通路（114）的微电子部件中，导电特征（120E.A，120E.B）设置在衬底上方，该衬底环绕导电通孔突起（114'） ）以形成电容器，电磁屏蔽以及可能的其他元件。 还提供了其它特征和实施例。

公开(公告)号：US09379074B2

公开(公告)日：2016-06-28

申请号：US14250317

申请日：2014-04-10

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L23/00 ,  H01L23/34 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L23/49816 ,  H01L23/36 ,  H01L23/49811 ,  H01L24/10 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/1718 ,  H01L2224/32145 ,  H01L2224/45147 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81825 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/15192 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An apparatus relating generally to a die stack is disclosed. In such an apparatus, a substrate is included. A first bond via array includes first wires each of a first length extending from a first surface of the substrate. An array of bump interconnects is disposed on the first surface. A die is interconnected to the substrate via the array of bump interconnects. A second bond via array includes second wires each of a second length different than the first length extending from a second surface of the die.

Abstract translation: 公开了一种通常涉及管芯堆叠的装置。 在这种装置中，包括基板。 第一接合通孔阵列包括从基板的第一表面延伸的第一长度的第一布线。 凸起互连阵列设置在第一表面上。 模具通过凸块互连阵列与衬底互连。 第二接合通孔阵列包括第二导线，每个第二导线的第二长度不同于从模具的第二表面延伸的第一长度。

公开(公告)号：US09355905B2

公开(公告)日：2016-05-31

申请号：US14722672

申请日：2015-05-27

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Pezhman Monadgemi ,  Michael Newman ,  Charles G. Woychik ,  Terrence Caskey

IPC: H01L21/768 ,  H01L21/78 ,  H01L21/56 ,  H01L23/48 ,  H01L21/3105 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L21/76898 ,  H01L21/31053 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/768 ,  H01L21/76841 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/481 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2924/0002 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects.

公开(公告)号：US20160079169A1

公开(公告)日：2016-03-17

申请号：US14489358

申请日：2014-09-17

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar ,  Charles G. Woychik ,  Guilian Gao ,  Arkalgud R. Sitaram

IPC: H01L23/532 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5328 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/5226 ,  H01L24/83 ,  H01L25/0652 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/4823 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/014

Abstract: An interconnect (124) suitable for attachment of integrated circuit assemblies to each other comprises a polymer member (130) which is conductive and/or is coated with a conductive material (144). Such interconnects replace metal bond wires in some embodiments. Other features are also provided.

Abstract translation: 适于将集成电路组件彼此连接的互连（124）包括导电和/或涂覆有导电材料（144）的聚合物构件（130）。 在一些实施例中，这种互连替代金属接合线。 还提供其他功能。

公开(公告)号：US09237648B2

公开(公告)日：2016-01-12

申请号：US13776035

申请日：2013-02-25

Applicant: Invensas Corporation

Inventor： Michael Newman ,  Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Pezhman Monadgemi ,  Terrence Caskey

IPC: H05K7/10 ,  H05K7/12 ,  H05K1/11 ,  H05K3/40 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L2224/13 ,  H01L2224/16225 ,  H05K1/111 ,  H05K3/0014 ,  H05K3/4038 ,  Y10T29/49117

Abstract: An interposer has conductive elements at a first side and terminals at a second side opposite therefrom, for connecting with a microelectronic element and a second component, respectively. The component includes a first element having a thermal expansion coefficient less than 10 ppm/° C., and an insulating second element, with a plurality of openings extending from the second side through the second element towards the first element. A conductive structure extending through the openings in the second element and through the first element electrically connects the terminals with the conductive elements.

Abstract translation: 插入件在第一侧具有导电元件，在与其相对的第二侧具有端子，用于分别与微电子元件和第二元件连接。 该组件包括具有小于10ppm /℃的热膨胀系数的第一元件和绝缘的第二元件，多个开口从第二侧延伸穿过第二元件朝向第一元件。 延伸穿过第二元件中的开口并通过第一元件的导电结构将端子与导电元件电连接。

公开(公告)号：US09226396B2

公开(公告)日：2015-12-29

申请号：US13797355

申请日：2013-03-12

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Belgacem Haba ,  Ilyas Mohammed

IPC: H05K1/09 ,  H05K1/00 ,  H05K1/16 ,  H05K1/11 ,  H05K7/10 ,  H01L23/498 ,  H01L21/48

CPC classification number: H05K1/0306 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/13 ,  H01L23/3731 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5381 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/17 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H05K1/09 ,  H05K1/112 ,  H05K1/115 ,  H05K3/4007 ,  H05K3/42 ,  H05K2201/09545 ,  H05K2201/10378 ,  H05K2203/0323

Abstract: Interposers and methods of making the same are disclosed herein. In one embodiment, an interposer includes a region having first and second oppositely facing surfaces and a plurality of pores, each pore extending in a first direction from the first surface towards the second surface, wherein alumina extends along a wall of each pore; a plurality of electrically conductive connection elements extending in the first direction, consisting essentially of aluminum and being electrically isolated from one another by at least the alumina; a first conductive path provided at the first surface for connection with a first component external to the interposer; and a second conductive path provided at the second surface for connection with a second component external to the interposer, wherein the first and second conductive paths are electrically connected through at least some of the connection elements.

Abstract translation: 中间体及其制备方法在本文中公开。 在一个实施例中，插入件包括具有第一和第二相对面的表面和多个孔的区域，每个孔从第一表面朝向第二表面沿第一方向延伸，其中氧化铝沿每个孔的壁延伸; 多个导电连接元件，其沿第一方向延伸，主要由铝构成，并通过至少氧化铝彼此电隔离; 第一导电路径，设置在第一表面处，用于与插入件外部的第一部件连接; 以及设置在所述第二表面处用于与所述插入件外部的第二部件连接的第二导电路径，其中所述第一和第二导电路径通过至少一些所述连接元件电连接。

公开(公告)号：US20150303157A1

公开(公告)日：2015-10-22

申请号：US14754293

申请日：2015-06-29

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L23/00 ,  H01L21/3213

CPC classification number: H01L24/11 ,  H01L21/3213 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/0348 ,  H01L2224/0362 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05664 ,  H01L2224/05686 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11013 ,  H01L2224/1111 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/81815 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00

Abstract: An apparatus relating generally to a substrate is disclosed. In this apparatus, a first metal layer is on the substrate. The first metal layer has an opening. The opening of the first metal layer has a bottom and one or more sides extending from the bottom. A second metal layer is on the first metal layer. The first metal layer and the second metal layer provide a bowl-shaped structure. An inner surface of the bowl-shaped structure is defined responsive to the opening of the first metal layer and the second metal layer thereon. The opening of the bowl-shaped structure is configured to receive and at least partially retain a bonding material during a reflow process.