Abstract:
In one embodiment, a packaging solution for an application integrated circuit (IC) and one or more other ICs is provided. The packaging solution may support both chip-on-chip packaging of the application IC (in flip-chip connection to a package substrate) and other ICs (in non-flip chip orientation), and package-on-package packaging of the application IC and the other ICs. The package substrate may include a first set of pads proximate to the application IC to support chip-on-chip connection to the other ICs. The pads may be connected to conductors that extend underneath the application IC, to connect to the application IC. A second set of pads may be connected to package pins for package-on-package solutions. If the chip-on-chip solution proves reliable, support for the package-on-package solution may be eliminated and the package substrate may be reduced in size.
Abstract:
A semiconductor package includes a semiconductor chip having a plurality of bonding pads, dielectric members formed over the semiconductor chip in such a way as to expose portions of respective bonding pads and having a trapezoidal sectional shape, and bumps formed to cover the exposed portions of the respective bonding pads and portions of the dielectric members and having a step-like sectional shape.
Abstract:
A semiconductor device includes a protective insulating film, an opening formed in the protective insulating film, an electrode pad located within the opening, a bump formed on the protective insulating film, and an interconnect. The bump includes a bump core and a conductive film. The bump core includes an insulating resin layer and a conductive resin layer located on the insulating resin layer. The conductive film is formed on at least the upper surface of the bump core. The interconnect connects the conductive film of the bump and the electrode pad.
Abstract:
A semiconductor chip includes stress-relief to mitigate the effects of differences in coefficients of thermal expansion (CTE) between a printed circuit board (PCB) and a semiconductor chip and a flip-chip package including the semiconductor chip. The semiconductor chip includes a stress-relief buffer coupling a bump and a semiconductor chip pad.
Abstract:
Wafer-level package semiconductor devices are described that have a smallest distance between two adjacent attachment bumps smaller than about twenty-five percent (25%) of a pitch between the two adjacent attachment bumps. The smallest distance between the two adjacent attachment bumps allows for an increase in the number of attachment bumps per area without reducing the size of the bumps, which increases solder reliability. The increased solder reliability may reduce stress to the attachment bumps, particularly stress caused by CTE mismatch during thermal cycling tests, dynamic deformation during drop tests or cyclic bending tests, and so on.
Abstract:
A method of fabricating a bonding structure having compliant bumps includes first providing a first substrate and a second substrate. The first substrate includes first bonding pads. The second substrate is disposed on one side of the first substrate and includes second bonding pads and compliant bumps disposed thereon. The second bonding pads are opposite to the first bonding pads. Next, a non-conductive adhesive layer and ball-shaped spacers are formed between the first and the second substrates. Finally, the first substrate, the non-conductive adhesive layer, and the second substrate are compressed, such that the compliant bumps on the second bonding pads of the second substrate pass through the non-conductive adhesive layer and are electrically connected to the first bonding pads of the first substrate, respectively. The ball-shaped spacers are distributed in the non-conductive adhesive layer sandwiched between the first and the second substrates for maintaining the gap therebetween.
Abstract:
An electronic assembly is provided. The assembly comprises a substrate having a plurality of conductive contacts disposed on a surface of the substrate. The substrate comprises a dielectric material. The assembly comprises a detector having a plurality of conductive contacts disposed on a surface of the detector which is adjacent to the surface of the substrate. At least one compliant interconnect is disposed between the substrate and the detector. The conductive contacts of the substrate and the conductive contacts of the detector are in electrical communication with the compliant interconnect via a conductive epoxy. The compliant interconnect comprises a polymer core having an electrically conductive outer surface. In certain embodiments, the assembly comprises an interposer. In certain embodiments, an under-fill is disposed between the surface of the substrate and the surface of the detector.
Abstract:
In one embodiment, a packaging solution for an application integrated circuit (IC) and one or more other ICs is provided. The packaging solution may support both chip-on-chip packaging of the application IC (in flip-chip connection to a package substrate) and other ICs (in non-flip chip orientation), and package-on-package packaging of the application IC and the other ICs. The package substrate may include a first set of pads proximate to the application IC to support chip-on-chip connection to the other ICs. The pads may be connected to conductors that extend underneath the application IC, to connect to the application IC. A second set of pads may be connected to package pins for package-on-package solutions. If the chip-on-chip solution proves reliable, support for the package-on-package solution may be eliminated and the package substrate may be reduced in size.
Abstract:
A semiconductor wafer structure comprises a first surface and a second surface opposite to the first surface, a plurality of chip areas formed on the first surface, a plurality of through-silicon holes formed in each of the plurality of chip areas connecting the first surface and the second surface, and a through-silicon-via (TSV) electrode structure formed in each through-silicon hole. Each through-silicon-via electrode structure comprises a dielectric layer formed on the inner wall of the through-silicon hole, a barrier layer formed on the inner wall of the dielectric layer and defining a vacancy therein, a filling metal layer filled into the vacancy, a first end of the filling metal layer being lower than the first surface forming a recess, and a soft metal cap connecting to and overlaying the first end of the filling metal layer, wherein a portion of the soft metal cap is formed in the recess and the soft metal cap protrudes out of the first surface. Hence, the reliability of multi-chip stack package structure can be enhanced with the application of these soft metal caps.
Abstract:
In a method of fabricating an integrated circuit device having a three-dimensional stacked structured, the step of fixing many chip-shaped semiconductor circuits to a support substrate or a circuit layer with a predetermined layout can be performed easily and efficiently with a desired accuracy. Temporary adhesion portions 12b of semiconductor chips 13 are temporarily adhered to corresponding temporary adhesion regions 72a of a carrier substrate 73a by way of water films 81. The carrier substrate 73a is then pressed toward a support substrate or a desired circuit layer, thereby contacting connecting portions 12 of the chips 13 on the carrier substrate 73a with corresponding predetermined positions on the support substrate or a circuit layer. Thereafter, by fixing the connecting portions 12 to the predetermined positions, the chips 13 are attached to the support substrate or the circuit layer with a desired layout.