摘要:
A semiconductor device has a semiconductor die with a first conductive layer formed over the die. A first insulating layer is formed over the die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is constructed by forming a second insulating layer over the first insulating layer with a second opening having a width less than the first opening and depositing a conductive material into the second opening. The interconnect structure can be a conductive pillar or conductive pad. The interconnect structure has a width less than a width of the first opening. The second conductive layer over the first insulating layer outside the first opening is removed while leaving the second conductive layer under the interconnect structure.
摘要:
A semiconductor device has a semiconductor die with a first conductive layer formed over the semiconductor die. A first insulating layer is formed over the semiconductor die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is formed over the first and second conductive layers within openings of a second insulating layer. The second insulating layer is removed. The interconnect structure can be a conductive pillar or conductive pad. A bump material can be formed over the conductive pillar. A protective coating is formed over the conductive pillar or pad to a thickness less than one micrometer to reduce oxidation. The protective coating is formed by immersing the conductive pillar or pad into the bath containing tin or indium.
摘要:
A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.
摘要:
A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. The interconnect structure includes a first via formed in the wafer that exposes the conductive layer, a second via formed in the carrier wafer that exposes the conductive layer, a first metal layer deposited over the first via, the first metal layer in electrical contact with the conductive layer, and a second metal layer deposited over the second via, the second metal layer in electrical contact with the conductive layer. First and second insulation layers are deposited over the first and second metal layers respectively. The first or second insulation layer has an etched portion to expose a portion of the first or second metal layer.
摘要:
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A portion of a second side of the substrate, opposite the first side of the substrate, is removed to reduce its thickness. The encapsulant maintains substrate robustness during thinning process. A TSV is formed through the second side of the substrate to the first interconnect structure. A second interconnect structure is formed in the TSV. The TSV has a first insulating layer formed over the second side of the substrate and first conductive layer formed over the first insulating layer and into the TSV. The second interconnect structure has a second conductive layer formed over the first conductive layer in an area away from the TSV.
摘要:
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A portion of a second side of the substrate, opposite the first side of the substrate, is removed to reduce its thickness. The encapsulant maintains substrate robustness during thinning process. A TSV is formed through the second side of the substrate to the first interconnect structure. A second interconnect structure is formed in the TSV. The TSV has a first insulating layer formed over the second side of the substrate and first conductive layer formed over the first insulating layer and into the TSV. The second interconnect structure has a second conductive layer formed over the first conductive layer in an area away from the TSV.
摘要:
A semiconductor device has first and second wafers having bond pads. The bond pad of the second wafer is connected to the bond pad of the first wafer using a conductive adhesive. A first interconnect structure is formed within the second wafer and includes a first via formed in a back surface of the second wafer to expose the bond pad of the second wafer. A first metal layer is formed conformally over the first via and is in electrical contact with the bond pad of the second wafer. A third wafer is mounted over the second wafer by connecting a bond pad formed over a front surface of the third wafer to the first metal layer. A second interconnect structure is formed over a backside of the third wafer opposite the front surface. The second interconnect structure is electrically connected to the first metal layer.
摘要:
An integrated circuit system is provided including forming a wire ball on a bond wire; forming a shaped ball from the wire ball; and attaching the shaped ball on an integrated circuit die.
摘要:
An integrated circuit package system is provided including forming a wafer having a back side and an active side, forming a recess in the wafer from the back side, forming a cover in the recess, and singulating the wafer at the recess filled with the cover.