公开(公告)号：US20140057394A1

公开(公告)日：2014-02-27

申请号：US13594498

申请日：2012-08-24

申请人： Anandan Ramasamy ,  Yonggang Jin ,  Yun Liu ,  Eric Saugier ,  Romain Coffy ,  How Yuan Hwang

发明人： Anandan Ramasamy ,  Yonggang Jin ,  Yun Liu ,  Eric Saugier ,  Romain Coffy ,  How Yuan Hwang

IPC分类号： H01L21/60 ,  H01L21/56

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/19 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/06181 ,  H01L2224/11334 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2224/05 ,  H01L2224/81 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A manufacturing process includes forming a reconstituted wafer, including embedding semiconductor dice in a molding compound layer and forming through-wafer vias in the layer. A fan-out redistribution layer is formed on a front side of the wafer, with electrical traces interconnecting the dice, through-wafer vias, and contact pads positioned on the redistribution layer. Solder balls are positioned on the contact pads and a molding compound layer is formed on the redistribution layer, reinforcing the solder balls. A second fan-out redistribution layer is formed on a back side of the wafer, with electrical traces interconnecting back ends of the through-wafer vias and contact pads positioned on a back face of the second redistribution layer. Flip-chips and/or surface-mounted devices are coupled to the contact pads of the second redistribution layer and encapsulated in an underfill layer formed on the back face of the second redistribution layer.

摘要翻译： 一种制造方法包括形成重构的晶片，包括将半导体晶片嵌入到模塑复合层中并在该层中形成贯通晶片通孔。 在晶片的前侧形成扇出重分布层，其中电迹线将骰子，贯穿晶片通孔和位于再分布层上的接触焊盘相互连接。 焊球定位在接触垫上，并且在再分布层上形成模塑料层，从而加强焊球。 第二扇出再分配层形成在晶片的背面上，其中电迹线互连贯通晶片通孔的后端和位于第二再分布层的背面上的接触焊盘。 翻转芯片和/或表面安装器件耦合到第二再分布层的接触焊盘，并且封装在形成在第二再分配层的背面上的底部填充层中。

公开(公告)号：US20130105982A1

公开(公告)日：2013-05-02

申请号：US13287816

申请日：2011-11-02

申请人： Yonggang Jin ,  Romain Coffy ,  Jerome Teysseyre

发明人： Yonggang Jin ,  Romain Coffy ,  Jerome Teysseyre

IPC分类号： H01L21/78 ,  H01L23/485

CPC分类号： H01L23/498 ,  H01L21/561 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76838 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/36 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/181 ,  Y10T29/49124 ,  Y10T29/49174 ,  Y10T29/49204 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00

摘要： A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die in a same layer as a plurality of electrical traces configured to couple circuit pads of the semiconductor die to respective contact lands of the land grid array. In operation, the heat spreader improves efficiency of heat transfer from the die to the circuit board.

摘要翻译： 扇出晶片级封装设置有嵌入重构晶片中的半导体管芯。 再分配层位于半导体管芯上方，并且在封装的表面上包括焊盘栅格阵列。 铜管散热器形成在芯片上的再分配层中，与多个配置成将半导体管芯的电路焊盘耦合到焊盘栅极阵列的接触焊盘的多个电迹线相同的层中。 在操作中，散热器提高了从模具到电路板的热传递的效率。

公开(公告)号：US08664044B2

公开(公告)日：2014-03-04

申请号：US13287816

申请日：2011-11-02

申请人： Yonggang Jin ,  Romain Coffy ,  Jerome Teysseyre

发明人： Yonggang Jin ,  Romain Coffy ,  Jerome Teysseyre

IPC分类号： H01L21/00 ,  H01L23/12

CPC分类号： H01L23/498 ,  H01L21/561 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76838 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/36 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/181 ,  Y10T29/49124 ,  Y10T29/49174 ,  Y10T29/49204 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00

摘要： A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die in a same layer as a plurality of electrical traces configured to couple circuit pads of the semiconductor die to respective contact lands of the land grid array. In operation, the heat spreader improves efficiency of heat transfer from the die to the circuit board.

摘要翻译： 扇出晶片级封装设置有嵌入重构晶片中的半导体管芯。 再分配层位于半导体管芯上方，并且在封装的表面上包括焊盘栅格阵列。 铜管散热器形成在芯片上的再分配层中，与多个配置成将半导体管芯的电路焊盘耦合到焊盘栅极阵列的接触焊盘的多个电迹线相同的层中。 在操作中，散热器提高了从模具到电路板的热传递的效率。

公开(公告)号：US08786084B2

公开(公告)日：2014-07-22

申请号：US12751088

申请日：2010-03-31

申请人： Romain Coffy ,  Jean-François Sauty

发明人： Romain Coffy ,  Jean-François Sauty

IPC分类号： H01L23/488 ,  H01L23/00 ,  H01L21/60

CPC分类号： H01L24/85 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/274 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/20752 ,  Y10T29/49126 ,  H01L2224/85 ,  H01L2924/01204 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor package includes a semiconductor die attached to a support having electrically conductive paths, the semiconductor die having a bond-pad electrically connected to the electrically a conductive path on the support by a bond-wire of a first metallic composition, the bond-wire and the bond-pad being coated with a protection layer of a second metallic composition.

摘要翻译： 半导体封装包括附接到具有导电路径的支撑件的半导体管芯，所述半导体管芯具有通过第一金属组合物的接合线电连接到支撑体上的导电路径上的接合焊盘，所述接合线 并且所述接合垫涂覆有第二金属组合物的保护层。

公开(公告)号：US20130009173A1

公开(公告)日：2013-01-10

申请号：US13531638

申请日：2012-06-25

申请人： Julien Vittu ,  Romain Coffy

发明人： Julien Vittu ,  Romain Coffy

IPC分类号： H01L33/48

CPC分类号： G01S17/026 ,  G01J1/0271 ,  G01J1/0403 ,  G01J1/0407 ,  G01S7/4813 ,  H01L25/167 ,  H01L31/16 ,  H01L33/48 ,  H01L2224/48227 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An electronic package includes a substrate wafer having front and rear faces and a through passage having a front window and a blind cavity communicating laterally with the front window. A receiving integrated circuit chip is mounted on the rear face and includes an optical sensor situated opposite the blind cavity. A transparent encapsulant extends above the optical sensor and at least partially fills the through passage. An emitting integrated circuit chip, embedded in the transparent encapsulant, includes an optical emitter of luminous radiation. The emitting integrated circuit chip may be mounted to the front face or within the through passage to the receiving integrated circuit chip. The substrate wafer may further include a second through passage. The receiving integrated circuit chip further includes a second optical sensor situated opposite the second through passage. A cover plate is mounted to the front face at the second through passage.

摘要翻译： 电子封装包括具有前表面和后表面的基底晶片和具有前窗和与前窗横向连通的盲腔的通孔。 接收集成电路芯片安装在后表面上并且包括位于盲腔相对的光学传感器。 透明密封剂在光学传感器上方延伸并且至少部分地填充通过通道。 嵌入在透明密封剂中的发射集成电路芯片包括发光体的发光体。 发射集成电路芯片可以安装到前面或通向接收集成电路芯片的通路内。 衬底晶片还可以包括第二穿通通道。 接收集成电路芯片还包括与第二贯穿通道相对的第二光学传感器。 盖板在第二通道处被安装到前表面。

公开(公告)号：US20110092000A1

公开(公告)日：2011-04-21

申请号：US12990684

申请日：2009-05-20

申请人： Romain Coffy

发明人： Romain Coffy

IPC分类号： H01L21/66

CPC分类号： G01R31/2884 ,  G01R1/0408 ,  G01R31/2822 ,  H01L22/32 ,  H01L24/03 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L2224/03 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2224/11 ,  H01L2924/00

摘要： A method for manufacturing and for testing an integrated circuit, including the steps of forming, on the upper portion of the integrated circuit, a passivation layer including openings at the level of metal tracks of the last interconnect stack of the integrated circuit; forming, in the openings, first pads connected to second pads formed on the passivation layer by conductive track sections, the first pads being intended for the connection of the integrated circuit; testing the integrated circuit by bringing test tips in contact with the second pads; and eliminating at least a portion of at least one of the conductive track sections.

摘要翻译： 一种用于制造和测试集成电路的方法，包括以下步骤：在所述集成电路的上部形成钝化层，所述钝化层包括在所述集成电路的最后一个互连堆叠的金属轨道的水平面处的开口; 在所述开口中形成通过导电轨道部分连接到形成在所述钝化层上的第二焊盘的第一焊盘，所述第一焊盘用于所述集成电路的连接; 通过将测试头与第二个焊盘接触来测试集成电路; 以及消除所述导电轨道部分中的至少一个的至少一部分。

公开(公告)号：US20090134514A1

公开(公告)日：2009-05-28

申请号：US12262982

申请日：2008-10-31

申请人： Romain Coffy ,  Jacky Seiller ,  Gil Provent

发明人： Romain Coffy ,  Jacky Seiller ,  Gil Provent

IPC分类号： H01L23/488 ,  H01L21/44

CPC分类号： H05K3/242 ,  H01L24/03 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05666 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/11422 ,  H01L2224/11472 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/14 ,  H05K3/3473 ,  H05K2203/043 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A method for fabricating electrical bonding pads on one face of a wafer includes the production of electrically conductive areas and electrical connection branches connecting these conductive areas. A layer of mask material is deposited and openings are produced in this mask layer which extend above said conductive areas and at least some of which extend at least partly beyond the peripheral edges of the underlying conductive areas. Blocks made of a solder material are produces in the openings by electrodeposition in a bath. The mask material is then removed along with the connection branches. The wafer is passed through or placed in an oven so as to shape, on the conductive areas, the blocks into substantially domed electrical bonding pads.

摘要翻译： 用于在晶片的一个面上制造电接合焊盘的方法包括制造导电区域和连接这些导电区域的电连接分支。 沉积掩模材料层，并且在该掩模层中产生开口，该掩模层在所述导电区域之上延伸，并且至少其中一些延伸至少部分地超过下面的导电区域的周边边缘。 通过在浴中电沉积在开口中产生由焊料材料制成的块。 然后将掩模材料与连接分支一起移除。 将晶片通过或放置在烘箱中，以在导电区域上将块形成为基本上圆顶的电接合焊盘。

公开(公告)号：US20060273813A1

公开(公告)日：2006-12-07

申请号：US11407855

申请日：2006-04-20

申请人： Romain Coffy

发明人： Romain Coffy

IPC分类号： G01R31/02

CPC分类号： H01L23/552 ,  H01L23/055 ,  H01L23/06 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/16152 ,  H05K1/0218 ,  H05K3/284 ,  H05K9/0022 ,  H05K2203/041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45015 ,  H01L2924/207

摘要： A device for protecting an electronic circuit comprising a support to which are attached at least two circuit portions, each comprising at least one integrated circuit chip. The device comprises a wafer of a semiconductor material covered with a conductive layer arranged parallel to the support, the wafer being connected to the support by conductive pillars distributed around each circuit portion and in contact with the conductive layer.

摘要翻译： 一种用于保护电子电路的装置，包括支撑件，至少两个电路部分连接至所述支架，每个电路部分包括至少一个集成电路芯片。 该器件包括半导体材料的晶片，该半导体材料被平行于支撑体布置的导电层覆盖，晶片通过分布在每个电路部分周围并与导电层接触的导电柱连接到支撑体。

公开(公告)号：US08928148B2

公开(公告)日：2015-01-06

申请号：US13229924

申请日：2011-09-12

申请人： Romain Coffy ,  Yann Guillou

发明人： Romain Coffy ,  Yann Guillou

IPC分类号： H01L29/72 ,  H01L25/10 ,  H01L23/31 ,  H01L23/538 ,  H01L23/36 ,  H01L23/498 ,  H01L23/00 ,  H01L23/42 ,  H01L25/065

CPC分类号： H01L25/105 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/42 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/14 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/14519 ,  H01L2224/17519 ,  H01L2224/2518 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A first component includes a slice formed from an integrated circuit chip having a front face and a rear face. An encapsulation block encapsulates the integrated circuit chip such that front and rear faces of the chip and front and rear faces of the encapsulation block are co-planar to form front and rear faces of the slice. Front and rear electrical connection networks are provided on the front and rear faces, respectively, with the electrical connection networks linked by electrical connection vias passing through the encapsulation block. A thermal transfer layer at least partially covers the rear face. A second component may be behind and at a distance from the first component. Connection elements interposed between the first component and the second component include both thermal connection elements in contact with the thermal transfer layer and electrical connection elements interconnecting the first and second components.

摘要翻译： 第一部件包括由具有前表面和后表面的集成电路芯片形成的切片。 封装块封装集成电路芯片，使得芯片的前表面和后表面以及封装块的前后表面是共面的，以形成切片的前后面。 前后电气连接网络分别设置在前表面和后表面上，电连接网络通过通过封装块的电连接通孔连接。 至少部分地覆盖后表面的热转印层。 第二组件可以在第一组件的后面并且距离第一组件一定距离。 插入在第一部件和第二部件之间的连接元件包括与热传递层接触的热连接元件和互连第一和第二部件的电连接元件。

公开(公告)号：US20110151657A1

公开(公告)日：2011-06-23

申请号：US12673975

申请日：2008-06-27

申请人： Romain Coffy ,  Jacky Seiller ,  Gil Provent

发明人： Romain Coffy ,  Jacky Seiller ,  Gil Provent

IPC分类号： H01L21/28

CPC分类号： H05K3/3473 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/014 ,  H01L2924/12036 ,  H05K2203/043 ,  H05K2203/0574 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A method for fabricating electrical bonding pads on the electrical contact areas of a wafer includes producing first blocks made of a solder material, producing second blocks made of a solder material on these first blocks, and passing the blocks through an oven so as to shape the blocks into approximately domed electrical bonding pads.

摘要翻译： 用于在晶片的电接触区域上制造电接合焊盘的方法包括制造由焊料材料制成的第一块，在这些第一块上产生由焊料材料制成的第二块，并使块通过炉， 嵌入大致圆顶的电焊盘。