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    Multi-layer circuit substrates and electrical assemblies having conductive composition connectors
    3.
    发明授权
    Multi-layer circuit substrates and electrical assemblies having conductive composition connectors 有权
    具有导电组合物连接器的多层电路基板和电气组件

    公开(公告)号：US6054761A

    公开(公告)日：2000-04-25

    申请号：US203126

    申请日：1998-12-01

    申请人： Mark Thomas McCormack ,  Hunt Hang Jiang ,  Solomon I. Beilin ,  Albert Wong Chan ,  Yasuhito Takahashi

    发明人： Mark Thomas McCormack ,  Hunt Hang Jiang ,  Solomon I. Beilin ,  Albert Wong Chan ,  Yasuhito Takahashi

    IPC分类号： C08K3/00 ,  C08L63/00 ,  H01L23/498 ,  H05K3/40 ,  H05K3/46 ,  H01L23/04

    CPC分类号： H05K3/363 ,  H01L23/49883 ,  H05K3/4069 ,  H05K3/4614 ,  H05K3/4617 ,  H05K3/462 ,  H01L2224/16503 ,  H05K2201/09536 ,  H05K2201/096 ,  H05K2201/09827 ,  H05K2201/10666 ,  H05K2203/0425 ,  H05K2203/0455 ,  H05K3/321 ,  H05K3/4623

    摘要： Printed circuit substrates and electrical assemblies including a conductive composition are disclosed. The printed circuit substrate and the electrical assembly embodiments comprise a first conducting region and a second conducting region. A dielectric layer is disposed between the first and second conducting regions. An aperture is disposed in the dielectric layer and a via structure including the conductive composition is disposed in the aperture. The conductive composition is preferably in a cured state and electrically communicates with the first and second conducting regions. In preferred embodiments, the conductive composition comprises conductive particles in an amount of at least about 75 wt. % based on the weight of the composition. At least 50% by weight of the conductive particles have melting points of less than about 400.degree. C. The composition further includes a carrier including an epoxy-functional resin in an amount of at least about 50 wt. % based on the weight of the carrier, and a fluxing agent in an amount of at least about 0.1 wt % based on the weight of the carrier. The epoxy functional resin can have a viscosity of less than about 1000 centipoise at 25.degree. C.

    摘要翻译： 公开了印刷电路基板和包括导电组合物的电气组件。 印刷电路基板和电组件实施例包括第一导电区域和第二导电区域。 电介质层设置在第一和第二导电区域之间。 在电介质层中设置孔，并且包括导电组合物的通孔结构设置在孔中。 导电组合物优选处于固化状态并与第一和第二导电区域电连通。 在优选的实施方案中，导电组合物包含至少约75wt。 基于组合物的重量％。 至少50重量％的导电颗粒具有小于约400℃的熔点。该组合物还包括载体，其包含至少约50重量％的量的环氧官能树脂。 基于载体的重量，以及基于载体重量的至少约0.1重量％的助熔剂。 环氧官能树脂在25℃下的粘度可以小于约1000厘泊

    Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
    7.
    发明授权
    Sputtered and anodized capacitors capable of withstanding exposure to high temperatures 失效
    溅射和阳极氧化电容器能承受高温暴露

    公开(公告)号：US5872696A

    公开(公告)日：1999-02-16

    申请号：US826980

    申请日：1997-04-09

    申请人： Michael G. Peters ,  Michael G. Lee ,  Solomon I. Beilin ,  Yasuhito Takahashi

    发明人： Michael G. Peters ,  Michael G. Lee ,  Solomon I. Beilin ,  Yasuhito Takahashi

    IPC分类号： H01G4/08 ,  H01L21/02 ,  H01G4/008 ,  B05D5/12 ,  H01G4/06

    CPC分类号： H01L28/60 ,  H01G4/085

    摘要： Novel structures for capacitors which are capable of withstanding heat treatments to at least 400.degree. C. while providing low defect densities and low electrical series resistance in its electrodes are disclosed. In one embodiment of the present invention, a capacitor structure includes a bottom capacitor electrode formed of a first sub-layer of aluminum, a second sub-layer of tantalum nitride, and a third sub-layer of tantalum. The capacitor structure further includes a sputtered dielectric layer of tantalum pentoxide over the tantalum sub-layer of the bottom electrode. The resulting structure is anodized such that the underlying tantalum layer is fully anodized, and preferably such that a portion of the tantalum nitride layer is converted to a tantalum oxy-nitride. The tantalum nitride layer was discovered by the inventors to act as a good high temperature diffusion barrier for the aluminum, preventing the aluminum from migrating into the anodized tantalum pentoxide layer under high temperature processing conditions, where it would chemically reduce the tantalum atoms in the tantalum pentoxide layer and introduce conductive paths of tantalum in the dielectric (tantalum pentoxide) layer. The aluminum layer provides good electrical conductivity for the bottom electrode, and is anodized to fill any pinhole defects in the layers formed above it, thereby increasing manufacturing yields.

    摘要翻译： 公开了一种电容器的新型结构，其能够耐热处理至少400℃，同时在其电极中提供低缺陷密度和低电串联电阻。 在本发明的一个实施例中，电容器结构包括由铝的第一子层，氮化钽的第二子层和钽的第三子层形成的底部电容器电极。 电容器结构还包括在底部电极的钽子层上的五氧化二钽的溅射介电层。 所得到的结构被阳极氧化，使得下面的钽层被完全阳极氧化，并且优选地使得一部分氮化钽层转化为氮氧化钽。 本发明人发现氮化钽层用作铝的良好的高温扩散阻挡层，防止铝在高温加工条件下迁移到阳极氧化的五氧化二钽层中，其中它将化学还原钽中的钽原子 并在介电（五氧化二钽）层中引入钽的导电路径。 铝层为底部电极提供良好的导电性，并被阳极氧化以填充其上形成的层中的任何针孔缺陷，从而提高制造产量。