Abstract:
It has been found that integrated packages having dies with at least 10 bonding pads separated by a pitch of 65 μm or less are susceptible to corrosion upon wire bonding to these pads and subsequent encapsulation in a passivating material. In particular, crevices are potentially formed between the bonding wire and bonding pad that are not passivated and that promote corrosion. Avoidance of crevice formation through, for example, appropriately choosing the bonding pad and wire configuration substantially avoids such corrosion.
Abstract:
A method for fabricating a semiconductor component with an encapsulated through wire interconnect includes the steps of providing a substrate having a first side, a second side and a substrate contact; forming a via in the substrate contact and the substrate to the second side; placing a wire in the via; forming a first contact on the wire proximate to the first side and a second contact on the wire proximate to the second side; and forming a polymer layer on the first side leaving the first contact exposed. The polymer layer can be formed using a film assisted molding process including the steps of: forming a mold film on tip portions of the bonding members, molding the polymer layer, and then removing the mold film to expose the tip portions of the bonding members. The through wire interconnect provides a multi level interconnect having contacts on opposing sides of the semiconductor substrate.
Abstract:
A semiconductor device is provided that includes a semiconductor chip, a plurality of solder bumps that electrically couple the semiconductor chip to the outside, and a metal bump being provided on the surface of each first solder bump which is at least a part of the plurality of solder bumps and being made of a metal having a melting point higher than that of the first solder bump. The wettability of the first solder bump is improved as each metal bump serves as a core when the corresponding first solder bump melts. Thus, the connection reliability of the first solder bump can be improved.
Abstract:
A bonding apparatus including a chamber for maintaining an inert gas atmosphere; a first plasma torch for performing a surface treatment on pads and electrodes, the first plasma torch being attached in the chamber, to apply gas plasma to a substrate and a semiconductor chip that is placed inside the chamber; a second plasma torch for performing a surface treatment on an initial ball and/or wire at a tip end of a capillary that is positioned inside the chamber, the second plasma torch being attached in the chamber, to apply gas plasma to the initial ball and/or wire; and a bonding unit for bonding the surface-treated initial ball and/or wire to the surface-treated pads and electrodes in the chamber, thereby cleaning of the surface of the electrodes and pads as well as the wire can be effectively performed.
Abstract:
A method of forming a wire loop is provided. The method includes: (1) forming a first fold of wire; (2) bonding the first fold of wire to a first bonding location to form a first bond; (3) extending a length of wire, continuous with the first bond, between (a) the first bond and (b) a second bonding location; and (4) bonding a portion of the wire to the second bonding location to form a second bond.
Abstract:
The present invention aims to provide such a joint structure of a wound coil 1 and an IC chip 2 for a noncontact RFID device that is able to yield electrically and mechanically excellent connection, employing the wound coil 1, which is made by winding copper electric wire, with small variance of the electric resistance as an antenna coil for the noncontact RFID device, also by making use of such IC chips that their joint terminals 3 are covered with such metallization of the gold outermost layer 3a that is not liable to degradation during storage; and aims to provide such a method of joining the wound coil 1 and the IC chip 2 for the noncontact RFID device that is able to make said joint structure with ease and certainty, through selecting a direct joining process low in production cost as the joining method of the two, also through improving the process.
Abstract:
A method of profiling a series of wire bonds between a line of contact pads on a die, and a corresponding set of conductors on a supporting structure. The method involves electrically connecting each of the contact pads on the die to a corresponding conductor on the supporting structure with a respective wire bond, each of the wire bonds extending in an arc from the contact pad to the conductor and, pushing on each of the wire bonds individually to collapse the arc and plastically deform the wire bond such that the plastic deformation maintains the wire bond in a flatter profile shape. The support structure has a chip mounting area for supporting the die. The die has a back surface in contact with the chip mounting area and an active surface opposing the back surface, the active surface having the contact pads, and the chip mounting area being raised relative to the remainder of the support structure such that the contact pads are raised relative to the conductors.
Abstract:
A semiconductor package has a substrate with a plurality of contact pads. A first semiconductor die is mounted to the substrate. First wire bonds are formed between each of the center-row contact pads of the first semiconductor die and the substrate contact pads. The first wire bonds include an electrically insulative coating formed over the shaft that covers a portion of a surface of a bumped end of the first wire bonds. An epoxy material is deposited over the first semiconductor die. A second semiconductor die is mounted to the epoxy material. Second wire bonds are formed between each of the center-row contact pads of the second semiconductor die and the substrate contact pads. The second wire bonds include an electrically insulative coating formed over the shaft of the second wire bonds that covers a portion of a surface of a bumped end of the second wire bonds.
Abstract:
A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact. The semiconductor component can be used to form chip scale components, wafer scale components, stacked components, or interconnect components for electrically engaging or testing other semiconductor components.
Abstract:
Methods and systems are disclosed for forming secure wirebonds between electrical contacts in electronic device assemblies. Representative embodiments of the invention are described for forming a wirebond including system components and method steps for generating electromagnetic energy from a heat source and transmitting heat to a ball formed on a bondwire. Subsequently, pressure applied to the ball at the bonding site is used in the formation of a wirebond.