MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE
    12.
    发明申请
    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE 有权
    柔性半导体器件和柔性半导体器件的制造方法

    公开(公告)号:US20110049598A1

    公开(公告)日:2011-03-03

    申请号:US12939729

    申请日:2010-11-04

    IPC分类号: H01L29/786

    摘要: A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23 is partially etched to form source/drain electrodes 20s, 20d in a region corresponding to the gate electrode 20g. A semiconductor layer 40 is then formed in contact with the source/drain electrodes 20s, 20d and on the gate electrode 20g with the inorganic insulating layer 35 interposed therebetween. The inorganic insulating layer 35 on the gate electrode 20g functions as a gate insulating film 30, and the semiconductor layer 40 between the source/drain electrodes 20s, 20d on the inorganic insulating layer 35 functions as a channel.

    摘要翻译: 制备形成有第一金属层23,第二金属层25和介于其间的无机绝缘层35的三层复合箔的分层膜。 在第二金属层25被部分蚀刻以形成栅电极20g之后,第一金属层23被部分蚀刻以在对应于栅电极20g的区域中形成源/漏电极20s,20d。 然后,将半导体层40形成为与源极/漏极20s,20d接触并且在栅极电极20g上形成有绝缘层35。 栅电极20g上的无机绝缘层35用作栅极绝缘膜30,无机绝缘层35上的源/漏电极20s,20d之间的半导体层40用作沟道。