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公开(公告)号：US09331040B2
公开(公告)日：2016-05-03
申请号：US14429364
申请日：2013-07-19
发明人： Thomas Beck , Gerhard Steinberger , Andreas Walter
CPC分类号： H01L24/14 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03464 , H01L2224/0401 , H01L2224/05568 , H01L2224/05573 , H01L2224/05583 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05681 , H01L2224/10145 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11821 , H01L2224/11822 , H01L2224/11823 , H01L2224/11825 , H01L2224/11901 , H01L2224/13005 , H01L2224/13013 , H01L2224/13014 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13562 , H01L2224/13565 , H01L2224/13582 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13664 , H01L2224/13669 , H01L2224/13673 , H01L2224/13676 , H01L2224/16507 , H01L2924/00014 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/3841 , H01L2924/01074 , H01L2924/01015 , H01L2924/01005 , H01L2924/01042 , H01L2924/20751 , H01L2924/2076 , H01L2924/0105 , H01L2924/01047 , H01L2224/05552
摘要： The present invention relates to a method for forming a copper pillar on a semiconducting substrate, the copper pillar having an underbump metallization area comprising a metal less noble than copper and optionally a solder bump on the top portion, and having a layer of a second metal selected from tin, tin alloys, silver, and silver alloys deposited onto the side walls of said copper pillar. A layer of a first metal which is more noble than copper is deposited onto the entire outer surface of the copper pillar prior to deposition of the second metal layer. The layer of a second metal then has at least a reduced number of undesired pin-holes and serves as a protection layer for the underlying copper pillar.
摘要翻译： 本发明涉及一种用于在半导体衬底上形成铜柱的方法，所述铜柱具有底部金属化区域，所述底部衬底金属化区域包括比铜更贵的金属，并且可选地在顶部上具有焊料凸块，并且具有第二金属层 选自沉积在所述铜柱的侧壁上的锡，锡合金，银和银合金。 在沉积第二金属层之前，将比铜更贵的第一金属层沉积在铜柱的整个外表面上。 然后，第二金属层至少具有减少数量的不期望的针孔，并且用作下面的铜柱的保护层。
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12.发明授权Soldering device, soldering method, and substrate and electronic component produced by the soldering device or the soldering method 有权焊接装置，焊接方法以及由焊接装置制造的基板和电子部件或焊接方法公开(公告)号：US09289841B2
公开(公告)日：2016-03-22
申请号：US14004204
申请日：2012-04-16
申请人： Katsumori Taniguro
发明人： Katsumori Taniguro
IPC分类号： B23K31/02 , B23K3/06 , B23K1/08 , B23K1/20 , B23K35/26 , H05K3/28 , H05K3/34 , B23K3/08 , B23K1/00 , H01L23/00 , H05K3/00
CPC分类号： B23K3/0607 , B23K1/0016 , B23K1/08 , B23K1/20 , B23K1/203 , B23K3/0646 , B23K3/0669 , B23K3/082 , B23K35/262 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/741 , H01L24/742 , H01L2224/03312 , H01L2224/03418 , H01L2224/036 , H01L2224/0381 , H01L2224/03821 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05111 , H01L2224/05147 , H01L2224/05582 , H01L2224/05611 , H01L2224/05647 , H01L2224/0569 , H01L2224/11312 , H01L2224/116 , H01L2224/11821 , H01L2224/13111 , H01L2224/1369 , H01L2224/741 , H01L2924/381 , H05K3/0085 , H05K3/282 , H05K3/3468 , H05K2203/081 , H05K2203/122 , H05K2203/1366 , H05K2203/1518 , Y10T428/31678 , H01L2224/1141 , H01L2924/00012 , H01L2924/00014 , H01L2924/01028 , H01L2924/01047 , H01L2924/01029 , H01L2924/01032 , H01L2924/01083 , H01L2924/0103 , H01L2924/01051 , H01L2224/03
摘要： Provided are a soldering device and method which allow for soldering at low cost with high yield and high reliability. To solve the above problems, the soldering device has: a first processing section that immerses workpiece member 10 having copper electrode 2 in organic fatty acid-containing solution, and horizontally move immersed workpiece member 10 in organic fatty acid-containing solution 31; a second processing section having ejection unit 33 to spray a jet stream of molten solder 5a to workpiece member 10 while pulling out workpiece member 10 processed in the first processing section to space section 24 that has a pressurized steam atmosphere and is provided above organic fatty acid-containing solution 31; a third processing section having ejection unit 34 to spray organic fatty acid-containing solution 31 to excess molten solder 5a on workpiece member 10 for removal while pulling down workpiece member 10 processed in the second processing section after horizontally moving in space section 24; and a fourth processing section that picks up workpiece member 10 processed in the third processing section by pulling out from organic fatty acid-containing solution 31 after horizontally moving in organic fatty acid-containing solution 31.
摘要翻译： 提供了一种以高成本和高可靠性以低成本实现焊接的焊接装置和方法。 为了解决上述问题，焊接装置具有：将具有铜电极2的工件10浸渍在含有有机脂肪酸的溶液中的水平移动浸渍的有机脂肪酸溶液31中的工件10的第一处理部; 第二处理部分具有喷射单元33，以将熔融焊料5a的喷射流喷射到工件10上，同时将在第一处理部分中加工的工件10拉出到具有加压蒸汽气氛的空间部分24并且设置在有机脂肪酸之上 含有溶液31; 具有喷射单元34的喷射单元34，用于在空间部24中水平移动之后，将在第二处理部中处理的工件10拉下的同时，将含有机脂肪酸的溶液31喷射到工件10上的多余的熔融焊料5a以进行除去; 以及第四处理部，其通过在含有有机脂肪酸的溶液31中水平移动之后从含有机脂肪酸的溶液31中拉出而拾取在第三处理部中处理的工件10。
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13.发明授权公开(公告)号：US09287190B2
公开(公告)日：2016-03-15
申请号：US14337977
申请日：2014-07-22
IPC分类号： H01L23/36 , H01L23/29 , H01L23/31 , H01L23/367
CPC分类号： H01L23/3107 , H01L23/29 , H01L23/3114 , H01L23/3121 , H01L23/315 , H01L23/3171 , H01L23/367 , H01L23/373 , H01L23/44 , H01L23/473 , H01L23/564 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2224/05009 , H01L2224/11821 , H01L2224/11823 , H01L2224/11826 , H01L2224/11827 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/17181 , H01L2224/45111 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73257 , H01L2224/742 , H01L2224/8192 , H01L2224/8592 , H01L2224/94 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/10253 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/15311 , H01L2924/15312 , H01L2924/15313 , H01L2924/16151 , H01L2924/16251 , H01L2924/181 , H05K1/0203 , H05K7/20236 , H05K2201/064 , H01L2924/014 , H01L2224/03 , H01L2924/00012 , H01L2924/01049 , H01L2924/01048 , H01L2224/85399 , H01L2224/05599
摘要： Devices employing semiconductor die having hydrophobic coatings, and related cooling methods are disclosed. A device may include at least one semiconductor die electrically coupled to a substrate by electrical contact elements. During operation the semiconductor die and the electrical contact elements generate heat. By applying hydrophobic coatings to the semiconductor die and the electrical contact elements, a cooling fluid may be used to directly cool the semiconductor die and the electrical contact elements to maintain these components within temperature limits and free from electrical shorting and corrosion. In this manner, the semiconductor die and associated electrical contact elements may be cooled to avoid the creation of damaging localized hot spots and temperature-sensitive semiconductor performance issues.
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公开(公告)号：US20150279797A1
公开(公告)日：2015-10-01
申请号：US14429364
申请日：2013-07-19
发明人： Thomas Beck , Gerhard Steinberger , Andreas Walter
IPC分类号： H01L23/00
CPC分类号： H01L24/14 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03464 , H01L2224/0401 , H01L2224/05568 , H01L2224/05573 , H01L2224/05583 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05681 , H01L2224/10145 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11821 , H01L2224/11822 , H01L2224/11823 , H01L2224/11825 , H01L2224/11901 , H01L2224/13005 , H01L2224/13013 , H01L2224/13014 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13562 , H01L2224/13565 , H01L2224/13582 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13664 , H01L2224/13669 , H01L2224/13673 , H01L2224/13676 , H01L2224/16507 , H01L2924/00014 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/3841 , H01L2924/01074 , H01L2924/01015 , H01L2924/01005 , H01L2924/01042 , H01L2924/20751 , H01L2924/2076 , H01L2924/0105 , H01L2924/01047 , H01L2224/05552
摘要： The present invention relates to a method for forming a copper pillar on a semiconducting substrate, the copper pillar having an underbump metallization area comprising a metal less noble than copper and optionally a solder bump on the top portion, and having a layer of a second metal selected from tin, tin alloys, silver, and silver alloys deposited onto the side walls of said copper pillar. A layer of a first metal which is more noble than copper is deposited onto the entire outer surface of the copper pillar prior to deposition of the second metal layer. The layer of a second metal then has at least a reduced number of undesired pin-holes and serves as a protection layer for the underlying copper pillar.
摘要翻译： 本发明涉及一种用于在半导体衬底上形成铜柱的方法，所述铜柱具有底部金属化区域，所述底部衬底金属化区域包括比铜更贵的金属，并且可选地在顶部上具有焊料凸块，并且具有第二金属层 选自沉积在所述铜柱的侧壁上的锡，锡合金，银和银合金。 在沉积第二金属层之前，将比铜更贵的第一金属层沉积在铜柱的整个外表面上。 然后，第二金属层至少具有减少数量的不期望的针孔，并且用作下面的铜柱的保护层。
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公开(公告)号：US20150262953A1
公开(公告)日：2015-09-17
申请号：US14209118
申请日：2014-03-13
发明人： Li-Guo LEE , Yi-Chen LIU , Yung-Sheng LIU , Yi-Jen LAI , Chun-Jen CHEN , Hsi-Kuei CHENG
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05573 , H01L2224/0558 , H01L2224/05655 , H01L2224/05666 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/11821 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13006 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13565 , H01L2224/1357 , H01L2224/13693 , H01L2924/13091 , H01L2924/00 , H01L2924/01074 , H01L2924/01029 , H01L2924/00014 , H01L2924/014 , H01L2924/01082 , H01L2924/01079 , H01L2224/1182 , H01L2924/00012 , H01L2924/04953 , H01L2924/01047
摘要： A semiconductor device structure and a manufacturing method are provided. The method includes forming a conductive pillar over a semiconductor substrate. The method also includes forming a solder layer over the conductive pillar. The method further includes forming a water-soluble flux over the solder layer. In addition, the method includes reflowing the solder layer to form a solder bump over the conductive pillar and form a sidewall protection layer over a sidewall of the conductive pillar during the solder layer is reflowed.
摘要翻译： 提供半导体器件结构和制造方法。 该方法包括在半导体衬底上形成导电柱。 该方法还包括在导电柱上形成焊料层。 该方法还包括在焊料层上形成水溶性助焊剂。 此外，该方法包括回流焊料层以在导电柱上形成焊料凸块，并且在焊料层回流期间在导电柱的侧壁上形成侧壁保护层。
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公开(公告)号：US20150171041A1
公开(公告)日：2015-06-18
申请号：US14576132
申请日：2014-12-18
发明人： Po Ching CHEN , Lu-Chen HWAN
CPC分类号： H01L24/16 , G06K9/0002 , G06K9/00053 , H01L21/563 , H01L23/13 , H01L23/3171 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/11821 , H01L2224/11823 , H01L2224/11825 , H01L2224/13023 , H01L2224/13147 , H01L2224/13562 , H01L2224/1357 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/1369 , H01L2224/13693 , H01L2224/16058 , H01L2224/16113 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/81191 , H01L2224/81411 , H01L2924/01006 , H01L2924/00014 , H01L2924/00012
摘要： A chip package of the present invention including a substrate, a chip, at least one electrical connecting element and a solder layer is provided. The substrate has at least one contact. The chip is disposed on the substrate and has at least one pad. The electrical connecting element includes a copper bump and an anti-oxidation layer. The copper bump is disposed on the pad. The anti-oxidation layer is disposed on at least part of an outside surface of the copper bump and the outside surface of the copper bump is not connected to the pad. The solder layer is disposed between the copper bump and the contact. The pad is electrically connected to the contact through the electrical connecting element and solder layer. In addition, a chip element of the present invention is also provided.
摘要翻译： 提供本发明的芯片封装，其包括基板，芯片，至少一个电连接元件和焊料层。 衬底具有至少一个接触。 芯片设置在基板上并且具有至少一个焊盘。 电连接元件包括铜凸块和抗氧化层。 铜凸块设置在垫上。 抗氧化层设置在铜凸块的外表面的至少一部分上，并且铜凸块的外表面不与焊盘连接。 焊料层设置在铜凸块和触点之间。 焊盘通过电连接元件和焊料层电连接到触点。 此外，还提供了本发明的芯片元件。
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公开(公告)号：US09030001B2
公开(公告)日：2015-05-12
申请号：US14058955
申请日：2013-10-21
申请人： Tessera, Inc.
发明人： Belgacem Haba
IPC分类号： H01L23/48 , H01L23/52 , H01L21/48 , H01L23/498 , H01L23/00 , H01L25/065 , H01L25/10 , H01L25/00 , H01L21/50 , B82Y40/00
CPC分类号： H01L24/17 , B82Y40/00 , H01L21/4853 , H01L21/50 , H01L23/49811 , H01L23/52 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/116 , H01L2224/1182 , H01L2224/11821 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13644 , H01L2224/13794 , H01L2224/13911 , H01L2224/13944 , H01L2224/13947 , H01L2224/16057 , H01L2224/16113 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/29111 , H01L2224/73104 , H01L2224/81026 , H01L2224/81099 , H01L2224/81143 , H01L2224/81192 , H01L2224/81193 , H01L2224/81444 , H01L2224/81447 , H01L2224/81801 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15321 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , Y10S977/773 , H01L2224/81 , H01L2924/00 , H01L2224/05552
摘要： A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.
摘要翻译： 制造组件的方法包括以下步骤：将金属纳米颗粒施加到第一部件和第二部件中的任一个或两者的导电元件的暴露表面上，将第一部件的导电元件与第二部件的导电元件并置， 设置在其间的金属纳米颗粒，并且至少在并置的导电元件的界面处将温度升高到金属纳米粒子在并置的导电元件之间形成冶金接合部的接合温度。 第一部件和第二部件中的任一个或两者的导电元件可以包括基本上刚性的支柱，其具有突出在相应部件的表面上方的高度的顶表面，并且远离其顶表面以基本角度延伸的边缘表面。
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公开(公告)号：US09735123B2
公开(公告)日：2017-08-15
申请号：US14209118
申请日：2014-03-13
发明人： Li-Guo Lee , Yi-Chen Liu , Yung-Sheng Liu , Yi-Jen Lai , Chun-Jen Chen , Hsi-Kuei Cheng
CPC分类号： H01L24/13 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05573 , H01L2224/0558 , H01L2224/05655 , H01L2224/05666 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/11821 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13006 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13565 , H01L2224/1357 , H01L2224/13693 , H01L2924/13091 , H01L2924/00 , H01L2924/01074 , H01L2924/01029 , H01L2924/00014 , H01L2924/014 , H01L2924/01082 , H01L2924/01079 , H01L2224/1182 , H01L2924/00012 , H01L2924/04953 , H01L2924/01047
摘要： A semiconductor device structure and a manufacturing method are provided. The method includes forming a conductive pillar over a semiconductor substrate. The method also includes forming a solder layer over the conductive pillar. The method further includes forming a water-soluble flux over the solder layer. In addition, the method includes reflowing the solder layer to form a solder bump over the conductive pillar and form a sidewall protection layer over a sidewall of the conductive pillar during the solder layer is reflowed.
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公开(公告)号：US20150243624A1
公开(公告)日：2015-08-27
申请号：US14707465
申请日：2015-05-08
申请人： Tessera, Inc.
发明人： Belgacem Haba
IPC分类号： H01L23/00
CPC分类号： H01L24/17 , B82Y40/00 , H01L21/4853 , H01L21/50 , H01L23/49811 , H01L23/52 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/116 , H01L2224/1182 , H01L2224/11821 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13644 , H01L2224/13794 , H01L2224/13911 , H01L2224/13944 , H01L2224/13947 , H01L2224/16057 , H01L2224/16113 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/29111 , H01L2224/73104 , H01L2224/81026 , H01L2224/81099 , H01L2224/81143 , H01L2224/81192 , H01L2224/81193 , H01L2224/81444 , H01L2224/81447 , H01L2224/81801 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15321 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , Y10S977/773 , H01L2224/81 , H01L2924/00 , H01L2224/05552
摘要： A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.
摘要翻译： 制造组件的方法包括以下步骤：将金属纳米颗粒施加到第一部件和第二部件中的任一个或两者的导电元件的暴露表面上，将第一部件的导电元件与第二部件的导电元件并置， 设置在其间的金属纳米颗粒，并且至少在并置的导电元件的界面处将温度升高到金属纳米粒子在并置的导电元件之间形成冶金接头的接合温度。 第一部件和第二部件中的任一个或两者的导电元件可以包括基本上刚性的支柱，其具有突出在相应部件的表面上方的高度的顶表面，并且远离其顶表面以基本角度延伸的边缘表面。
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20.发明申请SOLDER BUMP, METHOD FOR FORMING A SOLDER BUMP, SUBSTRATE PROVIDED WITH SOLDER BUMP, AND METHOD FOR MANUFACTURING SUBSTRATE 审中-公开焊膏，形成焊膏的方法，用焊膏提供的基材，以及制造基板的方法公开(公告)号：US20150115020A1
公开(公告)日：2015-04-30
申请号：US14394516
申请日：2012-04-17
申请人： Katsumori Taniguro
发明人： Katsumori Taniguro
CPC分类号： B23K37/06 , H01L21/4853 , H01L23/49811 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05026 , H01L2224/05147 , H01L2224/05571 , H01L2224/05647 , H01L2224/11312 , H01L2224/11472 , H01L2224/1181 , H01L2224/11821 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13155 , H01L2224/16503 , H01L2224/94 , H01L2924/00014 , H05K3/282 , H05K3/3468 , H05K13/0465 , H05K2203/0557 , H05K2203/0746 , H05K2203/1344 , H01L2924/00012 , H01L2924/01028 , H01L2924/0105 , H01L2924/01047 , H01L2924/01029 , H01L2924/014 , H01L2924/0132 , H01L2224/11 , H01L2224/05552
摘要： Provided is a solder bump forming method capable of forming solder bumps having a desired constant thickness, without any failure such as copper corrosion, on a mounting board such as a printed circuit board having fine copper electrodes. The solder bump forming method includes: a process in which a prepared mask (5) is placed on a prepared substrate (1) and then a molten solder jet is blown to fill an opening of the mask (5) with molten solder (11a) until the molten solder (11a) exceeds the thickness of the mask (5); a process of removing a part of the molten solder (11a) that exceeds the thickness of the mask (5) to form a solder bump (11) having a predetermined thickness; and a process of removing the mask (5). The molten solder (11a) is molten lead-free solder that includes tin as a main ingredient and at least nickel as a sub ingredient, and further includes one or more other ingredients such as silver, copper, and germanium. The part of the molten solder (11a) that exceeds the thickness of the mask (5) is removed by using a blade or an air cutter or by spraying a solution (18) that includes organic fatty acid having 12 to 20 carbon atoms.
摘要翻译： 提供了一种焊料凸块形成方法，其能够在具有细铜电极的印刷电路板的安装板上形成具有期望的恒定厚度的焊料凸块，而不会发生诸如铜腐蚀的故障。 焊料凸点形成方法包括：将制备的掩模（5）放置在准备好的基板（1）上，然后吹入熔融焊料射流以用熔融焊料（11a）填充掩模（5）的开口的工艺， 直到熔融焊料（11a）超过掩模（5）的厚度; 除去熔融焊料（11a）的超过掩模（5）的厚度的一部分以形成具有预定厚度的焊料凸块（11）的工艺; 以及去除掩模（5）的过程。 熔融焊料（11a）是包含锡作为主要成分并且至少为镍作为副成分的熔融无铅焊料，并且还包括一种或多种其它成分例如银，铜和锗。 通过使用刀片或空气刀或通过喷雾含有碳原子数为12〜20的有机脂肪酸的溶液（18），除去超过掩模（5）的厚度的熔融焊料（11a）的一部分。
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