公开(公告)号：US20230238373A1

公开(公告)日：2023-07-27

申请号：US18080413

申请日：2022-12-13

申请人： Samsung Display Co., LTD.

发明人： Nak Cho CHOI ,  Byeong Kyun CHOI ,  Jae Phil LEE ,  Sun PARK ,  Min Chul SHIN ,  Sang Woo AN

IPC分类号： H01L25/16 ,  H01L27/12 ,  H01L23/00

CPC分类号： H01L25/167 ,  H01L27/1248 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/02185 ,  H01L2224/05026 ,  H01L2224/05073 ,  H01L2224/05573 ,  H01L2224/05561 ,  H01L2224/05686 ,  H01L2224/26145 ,  H01L2224/29016 ,  H01L2224/29021 ,  H01L2224/32145 ,  H01L2924/0549 ,  H01L2924/12041

摘要： A display device includes a substrate, a plurality of electrode pads including a first electrode pad and a common electrode pad on the substrate, a light emitting element including a first contact electrode on the first electrode pad and a second contact electrode on the common electrode pad, a conductive adhesive member including a plurality of conductive balls connecting the first electrode pad and the first contact electrode and connecting the common electrode pad and the second contact electrode, and a plurality of protrusions on the substrate and protruding in a thickness direction of the substrate. First protrusions from among the plurality of protrusions overlap the electrode pads in the thickness direction of the substrate.

公开(公告)号：US20180158789A1

公开(公告)日：2018-06-07

申请号：US15871804

申请日：2018-01-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Ming-Che Ho ,  Hung-Jui Kuo ,  Yi-Wen Wu ,  Tzung-Hui Lee

IPC分类号： H01L23/00 ,  H01L21/66

CPC分类号： H01L24/02 ,  H01L22/14 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02185 ,  H01L2224/02315 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/13026

摘要： A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

公开(公告)号：US20180108626A1

公开(公告)日：2018-04-19

申请号：US15642742

申请日：2017-07-06

申请人： International Business Machines Corporation

发明人： Ekta Misra ,  Krishna R. Tunga

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0215 ,  H01L2224/02166 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/03013 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05191 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05687 ,  H01L2224/05691 ,  H01L2224/05693 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/07025 ,  H01L2924/3511 ,  H01L2924/35121 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0455 ,  H01L2924/01073 ,  H01L2924/04541 ,  H01L2924/0469 ,  H01L2924/0463 ,  H01L2924/01013 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/0496 ,  H01L2924/0538 ,  H01L2924/01044 ,  H01L2924/0479 ,  H01L2924/01027 ,  H01L2924/048 ,  H01L2924/01028 ,  H01L2924/01006

摘要： Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

公开(公告)号：US20170365564A1

公开(公告)日：2017-12-21

申请号：US15182723

申请日：2016-06-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Ming-Che Ho ,  Hung-Jui Kuo ,  Yi-Wen Wu ,  Tzung-Hui Lee

IPC分类号： H01L23/00 ,  H01L21/66

CPC分类号： H01L24/02 ,  H01L22/14 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02185 ,  H01L2224/02315 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/13026

摘要： A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

公开(公告)号：US09799632B2

公开(公告)日：2017-10-24

申请号：US15457744

申请日：2017-03-13

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC分类号： H01L23/02 ,  H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US09717148B2

公开(公告)日：2017-07-25

申请号：US14859026

申请日：2015-09-18

申请人： Delaware Capital Formation, Inc.

发明人： Mark Hahn

IPC分类号： H05K3/10 ,  H05K1/18 ,  B23K9/167 ,  B23K9/09 ,  H01L23/00 ,  B23K26/21 ,  B23K26/0622

CPC分类号： H05K3/103 ,  B23K9/0043 ,  B23K9/091 ,  B23K9/092 ,  B23K9/167 ,  B23K9/23 ,  B23K26/0622 ,  B23K26/21 ,  B23K26/22 ,  B23K26/32 ,  B23K2101/38 ,  B23K2103/00 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/05 ,  H01L24/07 ,  H01L24/08 ,  H01L24/09 ,  H01L24/42 ,  H01L24/44 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02163 ,  H01L2224/02185 ,  H01L2224/04042 ,  H01L2224/45147 ,  H01L2224/45639 ,  H01L2224/48476 ,  H01L2224/80007 ,  H01L2224/80009 ,  H01L2224/8019 ,  H01L2224/8034 ,  H01L2924/00014 ,  H05K1/18 ,  H05K3/328 ,  H05K2201/10242 ,  H05K2201/10265 ,  H05K2201/10287 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

公开(公告)号：US09601459B2

公开(公告)日：2017-03-21

申请号：US14576637

申请日：2014-12-19

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC分类号： H01L29/80 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US20160379946A1

公开(公告)日：2016-12-29

申请号：US14891319

申请日：2014-11-13

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Kazuyoshi MAEKAWA ,  Yuichi KAWANO

IPC分类号： H01L23/00

CPC分类号： H01L24/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/02181 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/0347 ,  H01L2224/035 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05566 ,  H01L2224/05567 ,  H01L2224/05664 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/4502 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/01008

摘要： A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.

摘要翻译： 半导体器件包括：形成在多个布线层的最上层中的焊盘电极9a; 在焊盘电极9a上具有开口11a的基底绝缘膜11; 形成在基底绝缘膜11上的贱金属膜UM; 形成在基底金属膜UM上的再分布线RM; 和形成为覆盖再分配线RM的上表面和侧面的帽金属膜CM。 另外，在再分配线RM外部的区域中，由不同于再分配线RM的材料制成的贱金属膜UM和由再分配线RM不同的材料制成的帽金属膜CM形成在盖 形成在再分配线路RM和基底绝缘膜11的侧面上的金属膜CM和基底金属膜UM和盖金属膜CM在再分配线路RM外部的区域中彼此直接接触。

公开(公告)号：US20150179605A1

公开(公告)日：2015-06-25

申请号：US14576637

申请日：2014-12-19

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC分类号： H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

摘要翻译： 第一微电子部件与第二微电子部件的接收表面的对准通过与静电取向相结合的毛细管力诱导的自对准来实现。 后者通过沿着第一部件的周边提供至少一个第一电导体线，以及沿着第二部件的接收表面上的位置的周边的至少一个第二电导体，部件将放置在其上 。 由导体线包围的接触区域被润湿层覆盖。 电导体线可以嵌入沿着周边延伸的防湿材料条，以产生润湿性对比度。 润湿性对比度有助于保持接触区域之间的取向液滴，从而通过毛细管力获得自对准。 通过在导体线上施加适当的电荷，实现静电自对准，这改善了通过毛细管力获得的对准并且在液体的蒸发期间保持对准。

公开(公告)号：US20090212426A1

公开(公告)日：2009-08-27

申请号：US12389857

申请日：2009-02-20

申请人： Hiroshi Ishizeki ,  Masafumi Uehara

发明人： Hiroshi Ishizeki ,  Masafumi Uehara

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L21/76816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/0401 ,  H01L2224/05013 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05553 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05562 ,  H01L2224/05563 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/05687 ,  H01L2224/05688 ,  H01L2224/10125 ,  H01L2224/1146 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13019 ,  H01L2224/13022 ,  H01L2224/13028 ,  H01L2224/13144 ,  H01L2224/81201 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/00

摘要： In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode.

摘要翻译： 在半导体器件中，当半导体器件安装时，可以有效地利用具有凸块的焊盘电极下方的区域，并且防止在凸块下方的半导体衬底局部地施加大量的力。 在半导体基板上形成第一层金属布线。 通过层间绝缘膜在第一层金属布线上形成焊盘电极。 焊盘电极通过形成在层间绝缘膜中的通孔与第一层金属布线连接。 在焊盘电极上形成保护膜。 保护膜具有露出焊盘电极的开口和形成在开口中的岛状保护膜。 通过保护膜中的开口与焊盘电极连接的Au凸块形成在焊盘电极上。 通孔形成在岛状保护膜下面，并且不完全填充有焊盘电极的一部分。