公开(公告)号：US20140159233A1

公开(公告)日：2014-06-12

申请号：US13708461

申请日：2012-12-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/498 ,  H01L23/00

CPC classification number: H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

Abstract translation: 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US09230935B2

公开(公告)日：2016-01-05

申请号：US14557227

申请日：2014-12-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/02 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10 ,  H01L25/065 ,  H01L25/00 ,  H05K3/34 ,  H05K3/40 ,  H01L25/07

CPC classification number: H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

Abstract translation: 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US20130001775A1

公开(公告)日：2013-01-03

申请号：US13634079

申请日：2011-03-18

Applicant: Hideo Nishikubo ,  Shunji Masumori ,  Takuya Harada ,  Tomohiro Ishii ,  Hidemichi Fujiwara

Inventor： Hideo Nishikubo ,  Shunji Masumori ,  Takuya Harada ,  Tomohiro Ishii ,  Hidemichi Fujiwara

IPC: H01L21/60 ,  H05K1/02 ,  H05K13/04 ,  H01L23/498

CPC classification number: H01L23/4924 ,  H01L21/4853 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13082 ,  H01L2224/13294 ,  H01L2224/13305 ,  H01L2224/13309 ,  H01L2224/13311 ,  H01L2224/13313 ,  H01L2224/13316 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13323 ,  H01L2224/13324 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/13357 ,  H01L2224/13364 ,  H01L2224/13366 ,  H01L2224/13369 ,  H01L2224/1601 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/2732 ,  H01L2224/2747 ,  H01L2224/29294 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29316 ,  H01L2224/29317 ,  H01L2224/29318 ,  H01L2224/2932 ,  H01L2224/29323 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29349 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/3201 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/81075 ,  H01L2224/81125 ,  H01L2224/81127 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81447 ,  H01L2224/8184 ,  H01L2224/83075 ,  H01L2224/83125 ,  H01L2224/83127 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K2203/0338 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.

Abstract translation: 一种形成在半导体的电极端子或电路板的电极端子的接合面上的导电连接构件，所述导电性连接构件包括多孔体，所述多孔体形成为含有具有平均值的金属微粒（P）的导电性糊料 一次粒径为10〜500nm的有机溶剂（S），或包含有机溶剂（S）和有机粘合剂（R）的金属微粒（P）和有机分散介质（D）的导电糊） 对于待接合的金属微粒（P）进行加热处理，多孔体由平均一次粒径为10〜500nm的接合金属微粒（P）形成，孔隙率为5〜35 体积％，平均孔径为1〜200nm。

公开(公告)号：US20170182600A1

公开(公告)日：2017-06-29

申请号：US15116275

申请日：2014-02-04

Applicant: Senju Metal Industry Co., Ltd.

Inventor： Hiroyoshi Kawasaki ,  Takahiro Roppongi ,  Daisuke Soma ,  Isamu Sato

IPC: B23K35/02 ,  C22F1/10 ,  B23K35/30 ,  C22C19/03 ,  B22F1/00 ,  B22F9/08 ,  C22F1/08 ,  C22C9/00

CPC classification number: B23K35/0244 ,  B22F1/0003 ,  B22F1/0048 ,  B22F1/025 ,  B22F9/08 ,  B22F9/082 ,  B22F9/14 ,  B22F2009/0848 ,  B22F2301/10 ,  B22F2301/15 ,  B22F2998/10 ,  B22F2999/00 ,  B23K1/0016 ,  B23K1/008 ,  B23K3/0623 ,  B23K35/302 ,  B23K35/3033 ,  B23K2101/42 ,  C22C9/00 ,  C22C19/03 ,  C22F1/08 ,  C22F1/10 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13117 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13138 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13163 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13172 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13179 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13305 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13323 ,  H01L2224/13324 ,  H01L2224/13338 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/13357 ,  H01L2224/1336 ,  H01L2224/13363 ,  H01L2224/13364 ,  H01L2224/13366 ,  H01L2224/13369 ,  H01L2224/1337 ,  H01L2224/13371 ,  H01L2224/13372 ,  H01L2224/13373 ,  H01L2224/13376 ,  H01L2224/13378 ,  H01L2224/13379 ,  H01L2224/1338 ,  H01L2224/13381 ,  H01L2224/13383 ,  H01L2224/13384 ,  H01L2224/1339 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1369 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81011 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2203/041 ,  B22F2202/13 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/00014 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01013 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/0106 ,  H01L2924/01071 ,  H01L2924/01069 ,  H01L2924/01021 ,  H01L2924/01068 ,  H01L2924/01059 ,  H01L2924/01067 ,  H01L2924/01066 ,  H01L2924/01065 ,  H01L2924/01064 ,  H01L2924/01061 ,  H01L2924/01057 ,  H01L2924/0102 ,  H01L2924/01063 ,  H01L2924/0107 ,  H01L2924/01058 ,  H01L2924/01038 ,  H01L2924/01056 ,  H01L2924/01052 ,  H01L2924/01076 ,  H01L2924/01072 ,  H01L2924/01043 ,  H01L2924/01004

Abstract: Produced is a metal ball which suppresses an emitted α dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

公开(公告)号：US20150108638A1

公开(公告)日：2015-04-23

申请号：US14557227

申请日：2014-12-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L25/07

CPC classification number: H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

Abstract translation: 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US08901726B2

公开(公告)日：2014-12-02

申请号：US13708461

申请日：2012-12-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/02 ,  H01L25/10 ,  H01L23/00 ,  H01L25/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

Abstract translation: 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。