公开(公告)号：US20120248592A1

公开(公告)日：2012-10-04

申请号：US13421244

申请日：2012-03-15

申请人： Shohei HATA ,  Yuichi Oda ,  Kazuma Kuroki ,  Hiromitsu Kuroda

发明人： Shohei HATA ,  Yuichi Oda ,  Kazuma Kuroki ,  Hiromitsu Kuroda

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81455 ,  H01L2224/83385 ,  H01L2224/83455 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3651 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

摘要翻译： 提供可以容易地连接到半导体芯片并且具有令人满意的可连接性的便宜的引线部件。 提供了一种引线部件，其包括具有用于连接到半导体芯片的连接部分的基底材料，包括：焊料部分，其具有由在该基材上卷绕和包覆的Zn粘合材料制成的Zn层，以及Al 在包含所述基材上的所述连接部的规定区域中，在所述Zn层上卷绕并包层接合的由Al结合材料制成的层; 并且所述焊料部还包括由覆盖所述Al层的表面的Au，Ag，Cu，Ni，Pd和Pt中的一种或两种以上构成的金属薄膜。

公开(公告)号：US20110281136A1

公开(公告)日：2011-11-17

申请号：US12780444

申请日：2010-05-14

申请人： Jenq-Gong Duh ,  Chien-Fu Tseng

发明人： Jenq-Gong Duh ,  Chien-Fu Tseng

IPC分类号： B32B15/20

CPC分类号： C22C13/00 ,  B23K35/302 ,  C22C9/05 ,  H01L21/563 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05573 ,  H01L2224/05649 ,  H01L2224/10145 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/3651 ,  Y10T428/12903 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A copper-manganese bonding structure adopted for use on Under Bump Metallurgy (UBM) at solder joints in packaging technology includes an electronic element, at least one soldering material and at least one manganese bonding material. The electronic element has at least one copper conductive portion. The soldering material corresponds to the copper conductive portion. The manganese bonding material is arranged in the copper conductive portion and the soldering material to form bonding between them. The manganese bonding material can reduce the generation of a brittle intermetallic compound Cu3Sn and suppress the generation of voids. The copper conductive portion is not consumed by the generation of the intermetallic compound. Thus the total structure can be protected and improved.

摘要翻译： 在包装技术的焊接接头处采用的用于Under Bump Metallurgy（UBM）的铜锰结合结构包括电子元件，至少一种焊接材料和至少一种锰粘接材料。 电子元件具有至少一个铜导电部分。 焊接材料对应于铜导电部分。 锰接合材料布置在铜导电部分和焊接材料中以形成它们之间的结合。 锰键合材料可以减少脆性金属间化合物Cu 3 Sn的产生并抑制空隙的产生。 铜导电部分不会被金属间化合物的产生所消耗。 因此，可以保护和改进总体结构。

公开(公告)号：US20110233793A1

公开(公告)日：2011-09-29

申请号：US13030356

申请日：2011-02-18

申请人： Masayuki MIURA ,  Katsuhiko OYAMA

发明人： Masayuki MIURA ,  Katsuhiko OYAMA

IPC分类号： H01L23/49 ,  B23K1/20 ,  B23K31/02

CPC分类号： B23K1/0016 ,  B23K35/262 ,  B23K2101/40 ,  H01L21/563 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/831 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2924/3651 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0341 ,  H05K2201/10674 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/81805 ,  H01L2924/00012

摘要： In one embodiment, a preliminary solder layer made of a Sn alloy is formed on a connecting pad of a wiring substrate. A solder bump made of a Sn alloy is formed on an electrode pad of a semiconductor chip. After contacting the preliminary solder layer and the solder bump, the preliminary solder layer and the solder bump are melted by heating to a temperature of their melting points or higher to form a solder connecting part made of a Sn alloy containing Ag and Cu. Only the preliminary solder layer of the preliminary solder layer and the solder bump is composed of a Sn alloy containing Ag.

摘要翻译： 在一个实施例中，在布线基板的连接焊盘上形成由Sn合金制成的预备焊料层。 在半导体芯片的电极焊盘上形成由Sn合金构成的焊料凸块。 在与预焊接层和焊料凸块接触之后，通过加热到预熔焊料层和焊料凸块的熔点以上，形成由含有Ag和Cu的Sn合金构成的焊料连接部。 只有预焊料层和焊料凸块的初步焊料层由含有Ag的Sn合金组成。

公开(公告)号：US20110084387A1

公开(公告)日：2011-04-14

申请号：US12973615

申请日：2010-12-20

申请人： Valery M. Dubin ,  Sridhar Balakrishnan ,  Mark Bohr

发明人： Valery M. Dubin ,  Sridhar Balakrishnan ,  Mark Bohr

IPC分类号： H01L23/482

CPC分类号： H01L24/13 ,  H01L21/288 ,  H01L21/4853 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11614 ,  H01L2224/13026 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/13564 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/29111 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

摘要翻译： 与模具包装相关的方法，技术和结构。 在一个示例性实施例中，管芯封装互连结构包括半导体衬底和与半导体衬底接触的第一导电层。 第一导电层可以包括基底层金属。 基底层金属可以包括Cu。 示例性实施方式还可以包括与第一导电层接触的扩散阻挡层和在扩散阻挡层顶部的润湿层。 凸起层可以驻留在润湿层的顶部，其中凸起层可以包括Sn，并且Sn可以被电镀。 扩散阻挡层可以是无电解的并且可以适于防止Cu和Sn扩散通过扩散阻挡层。 此外，扩散阻挡层可以进一步适于抑制凸块层中的晶须型形成。

公开(公告)号：US07663227B2

公开(公告)日：2010-02-16

申请号：US12028235

申请日：2008-02-08

申请人： Chris G. Macris ,  Robert G. Ebel ,  John C. McCullough

发明人： Chris G. Macris ,  Robert G. Ebel ,  John C. McCullough

IPC分类号： H01L23/10 ,  H01L23/34

CPC分类号： H01L23/42 ,  H01L23/10 ,  H01L23/433 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32057 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01327 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3651 ,  Y10T29/49002 ,  Y10T29/4935 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401

摘要： A metal thermal interface structure for dissipating heat from electronic components comprised a heat spreader lid, metal alloy that is liquid over the operating temperature range of the electronic component, and design features to promote long-term reliability and high thermal performance.

公开(公告)号：US20090174052A1

公开(公告)日：2009-07-09

申请号：US12298285

申请日：2007-05-22

申请人： Yoshimichi Sogawa ,  Takao Yamazaki ,  Nobuaki Takahashi

发明人： Yoshimichi Sogawa ,  Takao Yamazaki ,  Nobuaki Takahashi

IPC分类号： H01L23/52

CPC分类号： H01L23/49866 ,  H01L21/563 ,  H01L23/24 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0362 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05118 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/0516 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/115 ,  H01L2224/11502 ,  H01L2224/1152 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75702 ,  H01L2224/8121 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/3651 ,  H05K3/244 ,  H05K3/3436 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. An electronic component comprises the electronic component includes an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni.

摘要翻译： 在由例如Cu，Ni或NiP制成的常规UBM中，存在如下问题：当电子部件长时间保持在高温条件下时，UBM的阻挡特性丧失， 由于在接合界面处形成脆性合金层，强度降低。 本发明改善了在高温下储存之后焊料连接部分的长期连接可靠性降低的问题。 电子部件包括电子部件，其包括形成在基板或半导体元件上的电极焊盘和形成为覆盖电极焊盘的阻挡金属层，并且阻挡金属层在与所述电极焊盘接触的一侧相反的一侧包括CuNi合金层 电极焊盘，含有15〜60at％的Cu和40〜85at％的Ni的CuNi合金层。

公开(公告)号：US07554190B2

公开(公告)日：2009-06-30

申请号：US11248720

申请日：2005-10-11

申请人： Chris Macris ,  Thomas R. Sanderson ,  Robert G. Ebel

发明人： Chris Macris ,  Thomas R. Sanderson ,  Robert G. Ebel

IPC分类号： H01L23/10 ,  H01L23/34

CPC分类号： H01L23/26 ,  H01L23/055 ,  H01L23/10 ,  H01L23/42 ,  H01L23/433 ,  H01L24/28 ,  H01L24/31 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/01327 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3651 ,  H01L2224/0401

摘要： A metal thermal interface structure for dissipating heat from electronic components comprised a heat spreader lid, metal alloy that is liquid over the operating temperature range of the electronic component, and design features to promote long-term reliability and high thermal performance.

摘要翻译： 用于从电子部件散热的金属热接口结构包括散热器盖，在电子部件的工作温度范围内为液体的金属合金，以及用于促进长期可靠性和高热性能的设计特征。

公开(公告)号：US07538415B1

公开(公告)日：2009-05-26

申请号：US11707374

申请日：2007-02-17

申请人： Charles W. C. Lin ,  Cheng-Chung Chen

发明人： Charles W. C. Lin ,  Cheng-Chung Chen

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/12 ,  H01L23/053

CPC分类号： H01L21/4832 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/18 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0134 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/00012 ,  H01L2924/00015

摘要： A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line, a bumped terminal and a filler, a connection joint that electrically connects the routing line and the pad, an encapsulant and an insulative base. The routing line contacts the bumped terminal and the filler and extends laterally beyond the bumped terminal and the filler, the filler contacts the bumped terminal in a cavity that extends into the bumped terminal, and the insulative base contacts the routing line and the bumped terminal.

摘要翻译： 半导体芯片组件包括：半导体芯片，其包括导电焊盘，包括布线线，凸起端子和填充物的导电迹线，电连接布线线和焊盘的连接接头，密封剂和绝缘基座。 路由线接触凸起端子和填料，并横向延伸超过凸起端子和填料，填料与凸起端子接触，延伸到凸起端子的空腔中，绝缘基座接触布线线和凸起端子。

公开(公告)号：US07427809B2

公开(公告)日：2008-09-23

申请号：US11015213

申请日：2004-12-16

申请人： Peter C. Salmon

发明人： Peter C. Salmon

IPC分类号： H01L29/40 ,  H01L23/34

CPC分类号： H01L23/49827 ,  H01L21/4853 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/36 ,  H01L23/49811 ,  H01L23/66 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0652 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/11332 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11554 ,  H01L2224/11901 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81052 ,  H01L2224/81101 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/3651 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05099

摘要： A tightly packed three-dimensional electronic system or subsystem comprising multiple stacks of semiconductor elements is described. The system is repairable because the elements connect together using re-workable flip chip connectors; each flip chip connector comprises a conductive spring element on one side and a corresponding well filled with solder on the other side. The spring elements relieve stresses at the interfaces and allow the component stacks to remain flat; they also provide vertical compliance for easing assembly of elements that have been imperfectly thinned or planarized. Semiconductor integration platforms may be used to integrate active and passive devices, multi-layer interconnections, through wafer connections, I/O plugs, and terminals for attachment of other semiconductor elements or cables.

摘要翻译： 描述了包括多个半导体元件堆叠的紧密包装的三维电子系统或子系统。 该系统是可修复的，因为元件使用可重复使用的倒装芯片连接器连接在一起; 每个倒装芯片连接器包括在一侧上的导电弹簧元件和在另一侧上填充有焊料的对应的阱。 弹簧元件减轻了界面处的应力，并允许组件堆叠保持平坦; 它们还提供了垂直顺应性，以减少已经不完全变薄或平坦化的元件的组装。 半导体集成平台可用于通过晶片连接，I / O插头和端子来集成有源和无源器件，多层互连，以连接其他半导体元件或电缆。

公开(公告)号：US07390735B2

公开(公告)日：2008-06-24

申请号：US11031435

申请日：2005-01-07

申请人： Vivek Mehrotra

发明人： Vivek Mehrotra

IPC分类号： H01L21/44

CPC分类号： H05K3/3463 ,  H01L23/3735 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3651 ,  H05K1/0306 ,  H05K2203/0278 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012

摘要： A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.

摘要翻译： 一种形成包含SiC或其他半导体器件的封装的方法，其利用瞬态液相（TLP）接合结合到其它部件或导电表面，以使用导电金属的原位形成的三元或四元混合物和使用TLP产生的器件产生高温熔点键 三元或四元材料的键。 组合物满足互连或接头的相互冲突的要求，其可以暴露于高温下，并且在导热，导电，空隙和抗蠕变性，耐腐蚀性以及在温度和功率循环方面是可靠的。