公开(公告)号：US09831302B2

公开(公告)日：2017-11-28

申请号：US15360121

申请日：2016-11-23

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L21/02 ,  H01L49/02 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L25/11 ,  H01L25/16 ,  H01L25/00 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L28/60 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5223 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/105 ,  H01L25/11 ,  H01L25/115 ,  H01L25/165 ,  H01L25/50 ,  H01L28/40 ,  H01L28/65 ,  H01L2224/05009 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1205 ,  H01L2924/15311 ,  H01L2924/16153 ,  H01L2924/00

Abstract: A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.

公开(公告)号：US09761517B2

公开(公告)日：2017-09-12

申请号：US15477265

申请日：2017-04-03

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Belgacem Haba ,  Ilyas Mohammed

IPC: H05K1/09 ,  H05K1/00 ,  H05K1/11 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L23/373 ,  H01L21/48

CPC classification number: H05K1/0306 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/13 ,  H01L23/3731 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5381 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/17 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H05K1/09 ,  H05K1/112 ,  H05K1/115 ,  H05K3/4007 ,  H05K3/42 ,  H05K2201/09545 ,  H05K2201/10378 ,  H05K2203/0323

Abstract: Interposers and methods of making the same are disclosed herein. In one embodiment, an interposer includes a region having first and second oppositely facing surfaces and a plurality of pores, each pore extending in a first direction from the first surface towards the second surface, wherein alumina extends along a wall of each pore; a plurality of electrically conductive connection elements extending in the first direction, consisting essentially of aluminum and being electrically isolated from one another by at least the alumina; a first conductive path provided at the first surface for connection with a first component external to the interposer; and a second conductive path provided at the second surface for connection with a second component external to the interposer, wherein the first and second conductive paths are electrically connected through at least some of the connection elements.

公开(公告)号：US09754866B2

公开(公告)日：2017-09-05

申请号：US15248726

申请日：2016-08-26

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh ,  Belgacem Haba

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L21/78 ,  H01L25/10 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/367 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18 ,  H01L23/04 ,  H01L25/00

CPC classification number: H01L23/498 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/04 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1058 ,  H01L2924/1427 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19102 ,  H01L2224/81

Abstract: A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.

公开(公告)号：US20170243761A1

公开(公告)日：2017-08-24

申请号：US15587930

申请日：2017-05-05

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh

IPC: H01L21/48 ,  H01L23/498 ,  H01L21/683

CPC classification number: H01L21/486 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/43 ,  H01L24/46 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/023 ,  H01L2224/4502 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A component such as an interposer or microelectronic element can be fabricated with a set of vertically extending interconnects of wire bond structure. Such method may include forming a structure having wire bonds extending in an axial direction within one of more openings in an element and each wire bond spaced at least partially apart from a wall of the opening within which it extends, the element consisting essentially of a material having a coefficient of thermal expansion (“CTE”) of less than 10 parts per million per degree Celsius (“ppm/° C.”). First contacts can then be provided at a first surface of the component and second contacts provided at a second surface of the component facing in a direction opposite from the first surface, the first contacts electrically coupled with the second contacts through the wire bonds.

公开(公告)号：US09691696B2

公开(公告)日：2017-06-27

申请号：US15005220

申请日：2016-01-25

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Rajesh Katkar

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L21/288 ,  H01L21/768 ,  H01L25/065 ,  H01L25/00 ,  H01L23/04 ,  H01L23/14 ,  H01L23/367 ,  H01L23/00 ,  H01L23/48 ,  H01L23/538 ,  H01L23/10

CPC classification number: H01L23/055 ,  H01L21/2885 ,  H01L21/4803 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/04 ,  H01L23/10 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/315 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Stacked dies (110) are encapsulated in an interposer's cavity (304) by multiple encapsulant layers (524) formed of moldable material. Conductive paths (520, 620.3) connect the dies to the cavity's bottom wall (304B) and, through TSVs passing through the bottom wall, to a conductor below the interposer. The conductive paths can be formed in segments each of which is formed in a through-hole (514) in a respective encapsulant layer. Each segment can be formed by electroplating onto a lower segment; the electroplating current can be provided from below the interposer through the TSVs and earlier formed segments. Other features are also provided.

公开(公告)号：US09685420B2

公开(公告)日：2017-06-20

申请号：US15144108

申请日：2016-05-02

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L23/498 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L24/81 ,  H01L21/768 ,  H01L23/49838 ,  H01L23/528 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/10126 ,  H01L2224/1182 ,  H01L2224/13023 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1379 ,  H01L2224/13809 ,  H01L2224/13811 ,  H01L2224/13847 ,  H01L2224/13855 ,  H01L2224/1601 ,  H01L2224/16014 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/81007 ,  H01L2224/81048 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/8181 ,  H01L2224/8182 ,  H01L2224/81862 ,  H01L2224/81895 ,  H01L2224/81903 ,  H01L2224/81905 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01327 ,  H01L2924/364 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/2064

Abstract: An apparatus relates generally to a microelectronic device. In such an apparatus, a first substrate has a first surface with first interconnects located on the first surface, and a second substrate has a second surface spaced apart from the first surface with a gap between the first surface and the second surface. Second interconnects are located on the second surface. Lower surfaces of the first interconnects and upper surfaces of the second interconnects are coupled to one another for electrical conductivity between the first substrate and the second substrate. A conductive collar is around sidewalls of the first and second interconnects, and a dielectric layer is around the conductive collar.

公开(公告)号：US20170170031A1

公开(公告)日：2017-06-15

申请号：US15443371

申请日：2017-02-27

Applicant: Invensas Corporation

Inventor： Xuan Li ,  Rajesh Katkar ,  Long Huynh ,  Laura Wills Mirkarimi ,  Bongsub Lee ,  Gabriel Z. Guevara ,  Tu Tam Vu ,  Kyong-Mo Bang ,  Akash Agrawal

IPC: H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L25/00 ,  H01L21/304 ,  H01L23/29 ,  H01L25/065 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L21/568 ,  H01L21/02118 ,  H01L21/304 ,  H01L21/4846 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/76838 ,  H01L21/76892 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/4985 ,  H01L23/5384 ,  H01L24/09 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/19 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/16111 ,  H01L2224/16237 ,  H01L2224/27436 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/8185 ,  H01L2224/81903 ,  H01L2224/81904 ,  H01L2224/8192 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2224/81 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Fan-out wafer-level packaging (WLP) using metal foil lamination is provided. An example wafer-level package incorporates a metal foil, such as copper (Cu), to relocate bonding pads in lieu of a conventional deposited or plated RDL. A polymer such as an epoxy layer adheres the metal foil to the package creating conductive contacts between the metal foil and metal pillars of a die. The metal foil may be patterned at different stages of a fabrication process. An example wafer-level package with metal foil provides relatively inexpensive electroplating-free traces that replace expensive RDL processes. Example techniques can reduce interfacial stress at fan-out areas to enhance package reliability, and enable smaller chips to be used. The metal foil provides improved fidelity of high frequency signals. The metal foil can be bonded to metallic pillar bumps before molding, resulting in less impact on the mold material.

公开(公告)号：US09666560B1

公开(公告)日：2017-05-30

申请号：US14951892

申请日：2015-11-25

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Guilian Gao ,  Hong Shen ,  Rajesh Katkar ,  Belgacem Haba

IPC: H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L21/56 ,  H01L23/498 ,  H01L21/48 ,  H01L21/683

CPC classification number: H01L25/0655 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3675 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/116 ,  H01L2224/16057 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2224/81 ,  H01L2224/83

Abstract: A microelectronic assembly includes a dielectric element having bumps projecting from a first surface thereof, the bumps having end surfaces flush with a planarized encapsulation. A circuit structure having a thickness less than or equal to 10 microns, formed by depositing two or more dielectric layers and conductive layers on the respective dielectric layers, has electrically conductive features thereon which electrically contact the bumps. The circuit structure can be formed separately on a carrier and then joined with the bumps on the dielectric element, or the circuit structure can be formed by a build up process on the planarized surface of the encapsulation and the planarized surfaces of the bumps.

公开(公告)号：US09666513B2

公开(公告)日：2017-05-30

申请号：US15342744

申请日：2016-11-03

Applicant: Invensas Corporation

Inventor： Ashok S. Prabhu ,  Rajesh Katkar ,  Sean Moran

IPC: H01L23/552 ,  H01L23/495 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L25/10 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49568 ,  H01L23/552 ,  H01L24/24 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24175 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85005 ,  H01L2224/97 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2225/1064 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/18165 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: An assembly includes a plurality of stacked encapsulated microelectronic packages, each package including a microelectronic element having a front surface with a plurality of chip contacts at the front surface and edge surfaces extending away from the front surface. An encapsulation region of each package contacts at least one edge surface and extends away therefrom to a remote surface of the package. The package contacts of each package are disposed at a single one of the remote surfaces, the package contacts facing and coupled with corresponding contacts at a surface of a substrate nonparallel with the front surfaces of the microelectronic elements therein.

公开(公告)号：US20160307824A1

公开(公告)日：2016-10-20

申请号：US14686671

申请日：2015-04-14

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/562 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/15 ,  H01L23/498 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/4985 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5387 ,  H05K1/0203 ,  H05K1/0326 ,  H05K2201/062 ,  H05K2201/10378

Abstract: A substrate structure is presented that can include a porous polyimide material and electrodes formed in the porous polyimide material. In some examples, a method of forming a substrate can include depositing a barrier layer on a substrate; depositing a resist over the barrier layer; patterning and etching the resist; forming electrodes; removing the resist; depositing a porous polyimide aerogel; depositing a dielectric layer over the aerogel material; polishing a top side of the interposer to expose the electrodes; and removing the substrate from the bottom side of the interposer.

Abstract translation: 提出了可以包括多孔聚酰亚胺材料和形成在多孔聚酰亚胺材料中的电极的衬底结构。 在一些实例中，形成衬底的方法可以包括在衬底上沉积阻挡层; 在阻挡层上沉积抗蚀剂; 图案化和蚀刻抗蚀剂; 形成电极; 去除抗蚀剂; 沉积多孔聚酰亚胺气凝胶; 在气凝胶材料上沉积介电层; 抛光插入件的顶侧以露出电极; 以及从所述插入件的底侧移除所述基板。