公开(公告)号：US09165896B2

公开(公告)日：2015-10-20

申请号：US14453969

申请日：2014-08-07

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hae Cheon Kim ,  Ho Kyun Ahn ,  Byoung Gue Min ,  Hyung Sup Yoon ,  Jong Won Lim

IPC: H01L33/00 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/0225 ,  H01L2224/03466 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/13091 ,  H01L2924/1423 ,  H01L2924/201 ,  H01L2924/37001 ,  H01L2224/45099

Abstract: The present invention relates to a GaN transistor, and a method of fabricating the same, in which a structure of a bonding pad is improved by forming an ohmic metal layer at edges of the bonding pad of a source, a drain, and a gate so as to be appropriate to wire-bonding or a back-side via-hole forming process. Accordingly, adhesive force between a metal layer of the bonding pad and a GaN substrate is enhanced by forming the ohmic metal at the edges of the bonding pad during manufacturing of the GaN transistor, thereby minimizing a separation phenomenon of a pad layer during the wire-bonding or back-side via-hole forming process, and improving reliability of a device.

Abstract translation: 本发明涉及一种GaN晶体管及其制造方法，其中通过在源极，漏极和栅极的焊盘的边缘处形成欧姆金属层来改善焊盘的结构，因此 适于引线接合或背面通孔形成工艺。 因此，通过在制造GaN晶体管期间在焊盘的边缘处形成欧姆金属，可以增强焊盘的金属层与GaN基板之间的粘合力， 接合或背面通孔形成工艺，并提高器件的可靠性。

公开(公告)号：US09111869B2

公开(公告)日：2015-08-18

申请号：US13194585

申请日：2011-07-29

Applicant: Victor Hugo Cruz ,  David Francis Courtney

Inventor： Victor Hugo Cruz ,  David Francis Courtney

IPC: H01L29/12 ,  H01L23/495 ,  H01L23/29 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/291 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/37184 ,  H01L2224/37639 ,  H01L2224/37655 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/83439 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/097 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/17738 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/201 ,  H01L2924/20111 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2924/01005

Abstract: A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.

Abstract translation: 用于非轴向电子器件的高温非空腔封装是使用玻璃陶瓷化合物设计的，其能够在高于300-400℃的温度下连续组装和操作。金属钎焊，例如银，银胶体或 铜，用于连接半导体管芯，引线框架和连接器。 这些部件也是热匹配的，使得封装可以在高温下连续地组装和操作，并且可承受极端的温度变化，而不会发生键失效或者由于热失配引起的封装破裂。

公开(公告)号：US09972597B2

公开(公告)日：2018-05-15

申请号：US14800613

申请日：2015-07-15

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Kyoung-Kook Hong ,  Hyun Woo Noh ,  Youngkyun Jung ,  Dae Hwan Chun ,  Jong Seok Lee ,  Su Bin Kang

IPC: B23K31/00 ,  B23K35/00 ,  H01L23/00 ,  B23K35/02 ,  B23K35/26 ,  B23K35/30 ,  B23K20/02 ,  B23K20/16 ,  B23K20/233 ,  H05K3/34 ,  B23K101/42 ,  B23K103/16

CPC classification number: H01L24/83 ,  B23K20/026 ,  B23K20/16 ,  B23K20/233 ,  B23K35/025 ,  B23K35/264 ,  B23K35/3006 ,  B23K2101/42 ,  B23K2103/166 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13294 ,  H01L2224/13313 ,  H01L2224/13339 ,  H01L2224/16227 ,  H01L2224/16505 ,  H01L2224/29294 ,  H01L2224/29313 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/32505 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81825 ,  H01L2224/8184 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2924/00015 ,  H01L2924/10272 ,  H01L2924/201 ,  H01L2924/2075 ,  H01L2924/20751 ,  H05K3/341 ,  H05K3/3463 ,  H05K2201/10166 ,  H05K2203/1131 ,  H01L2224/29388 ,  H01L2924/00014 ,  H01L2224/13388 ,  H01L2924/00012

Abstract: A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

公开(公告)号：US09620434B1

公开(公告)日：2017-04-11

申请号：US15062893

申请日：2016-03-07

Applicant: Toyota Motor Engineering & Manufacturing North America, Inc.

Inventor： Shailesh N. Joshi ,  Masao Noguchi

IPC: H01L21/00 ,  H01L23/48 ,  H05K1/11 ,  H01L23/373 ,  H01L23/367 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L25/50 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27442 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29255 ,  H01L2224/29294 ,  H01L2224/29295 ,  H01L2224/29311 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32503 ,  H01L2224/83101 ,  H01L2224/83193 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2924/10272 ,  H01L2924/201 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A method of bonding a first substrate to a second substrate includes disposing a first high melting point metal layer onto a first substrate, disposing a first low melting point metal layer onto the first high melting point metal layer, disposing a second high melting point metal layer onto a second substrate, and disposing a second low melting point metal layer onto the second high melting point metal layer. The method further includes applying precursor metal particles onto the first and/or second low melting point metal layers, positioning the first and second low melting point metal layers such that the precursor metal particles contact both the first and second low melting point metal layers, and bonding the first substrate to the second substrate by heating the precursor metal particles and each metal layer to form an intermetallic alloy bonding layer between the first and second substrates.

公开(公告)号：US09543266B2

公开(公告)日：2017-01-10

申请号：US14893789

申请日：2015-03-31

Applicant: Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

Inventor： Takashi Yamada ,  Daizo Oda ,  Ryo Oishi ,  Teruo Haibara ,  Tomohiro Uno

IPC: H01B5/00 ,  H01L23/00 ,  B21C1/00 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14

CPC classification number: H01L24/45 ,  B21C1/00 ,  B21C1/003 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45012 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2924/00011 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00 ,  H01L2924/01201 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/12044 ,  H01L2924/00015 ,  H01L2224/45664 ,  H01L2924/01049 ,  H01L2924/01045 ,  H01L2924/01004 ,  H01L2924/01005

Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

Abstract translation: 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有 长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向 线中心横截面的方向，晶体方向<100>相对于导线纵向方向的角度差为15°以下的面积比为10％以上且小于50％，（3 ）当在线表面测量线长度方向的晶体方向时，晶体方向<100>与线长度方向的角度差为15°以下的面积比为70％以上 。 在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。 将最终的热处理温度和预热处理温度设定为预定范围。

公开(公告)号：US20150179603A1

公开(公告)日：2015-06-25

申请号：US14411741

申请日：2013-06-05

Applicant: Soitec

Inventor： Ionut Radu ,  Marcel Broekaart ,  Arnaud Castex ,  Gweltaz Gaudin ,  Gregory Riou

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/306

CPC classification number: H01L24/83 ,  H01L21/187 ,  H01L21/30604 ,  H01L21/30625 ,  H01L22/12 ,  H01L23/562 ,  H01L24/32 ,  H01L2224/29124 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29176 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83895 ,  H01L2924/01014 ,  H01L2924/0504 ,  H01L2924/10253 ,  H01L2924/201 ,  Y10T428/12493 ,  Y10T428/12639 ,  Y10T428/12646 ,  Y10T428/12653 ,  Y10T428/12674

Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in μm) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Abstract translation: 一种制造复合结构的方法，包括至少一个第一晶片与第二晶片的直接结合，并且包括启动键合波的传播的步骤，其中在所述第一和第二晶片传播之后的所述第一和第二晶片之间的结合界面 波具有小于或等于0.7J / m 2的结合能。 启动粘合波传播的步骤是在以下一个或多个条件下进行的：将晶片放置在小于20毫巴的压力的环境中和/或施加到两个晶片之一的机械压力 在0.1MPa和33.3MPa之间。 该方法还包括在开始粘合波的传播的步骤之后，确定在两个晶片的接合期间引起的应力水平的步骤，根据使用第二晶片计算出的应力参数Ct来确定应力水平 公式Ct = Rc / Ep，其中：Rc对应于两晶片组件的曲率半径（km），Ep对应于两晶片组件的厚度（μm）。 该方法还包括当确定的应力Ct大于或等于0.07时验证接合的步骤。

公开(公告)号：US20130026490A1

公开(公告)日：2013-01-31

申请号：US13194585

申请日：2011-07-29

Applicant: Victor H. Cruz ,  David Francis Courtney

Inventor： Victor H. Cruz ,  David Francis Courtney

IPC: H01L21/56 ,  H01L29/20 ,  H01L29/12 ,  H01L23/495

CPC classification number: H01L23/291 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/37184 ,  H01L2224/37639 ,  H01L2224/37655 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/83439 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/097 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/17738 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/201 ,  H01L2924/20111 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2924/01005

Abstract: A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.

Abstract translation: 用于非轴向电子器件的高温非空腔封装是使用玻璃陶瓷化合物设计的，其能够在高于300-400℃的温度下连续组装和操作。金属钎焊，例如银，银胶体或 铜，用于连接半导体管芯，引线框架和连接器。 这些部件也是热匹配的，使得封装可以在高温下连续地组装和操作，并且可承受极端的温度变化，而不会发生键失效或者由于热失配引起的封装破裂。

公开(公告)号：US20100187563A1

公开(公告)日：2010-07-29

申请号：US12691947

申请日：2010-01-22

Applicant: Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

Inventor： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC: H01L33/00 ,  H01L21/60

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

Abstract translation: 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US20180218988A1

公开(公告)日：2018-08-02

申请号：US15882680

申请日：2018-01-29

Applicant: KULITE SEMICONDUCTOR PRODUCTS, INC.

Inventor： Sorin Stefanescu

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/45144 ,  H01L2224/45169 ,  H01L2924/14 ,  H01L2924/146 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/351 ,  H01L2924/365

Abstract: Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.

公开(公告)号：US09601400B2

公开(公告)日：2017-03-21

申请号：US14827142

申请日：2015-08-14

Applicant: Semtech Corporation

Inventor： Victor Hugo Cruz ,  David Francis Courtney

IPC: H01L29/12 ,  H01L23/495 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/291 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/37184 ,  H01L2224/37639 ,  H01L2224/37655 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/83439 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/097 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/17738 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/201 ,  H01L2924/20111 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2924/01005

Abstract: A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.