公开(公告)号：US06861344B2

公开(公告)日：2005-03-01

申请号：US10341447

申请日：2003-01-14

申请人： Akira Yajima ,  Kenichi Yamamoto ,  Hiromi Abe

发明人： Akira Yajima ,  Kenichi Yamamoto ,  Hiromi Abe

IPC分类号： H01L21/66 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/8247 ,  H01L23/00 ,  H01L23/12 ,  H01L23/52 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L21/44 ,  H01L29/78 ,  H01L21/90 ,  H01L21/92

CPC分类号： H01L24/05 ,  H01L22/34 ,  H01L23/564 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L24/45 ,  H01L2224/02166 ,  H01L2224/02311 ,  H01L2224/03 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0558 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48644 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/29099

摘要： The corrosion of a pad portion on TEG is prevented, and the wettability of a solder and the shear strength after solder formation of a pad portion of an actual device are improved. A third layer wiring M3 on a chip area CA of a semiconductor wafer and a third layer wiring M3 on a scribe area SA are respectively comprised of a TiN film M3a, an Al alloy film M3b, and a TiN film M3c. A second pad portion PAD2 as the top of a rewiring 49 on the chip area CA is cleaned. Alternatively, an Au film 53a is formed thereon by an electroles splating method. Further, after the formation of the Au film 53a, a retention test is carried out. Thereafter, further, an Au film 53b is formed and a solder bump electrode 55 is formed. As a result, it is possible to prevent the corrosion of a first pad portion PAD1 of the third layer wiring M3 on the scribe area SA which is TEG due to a plating solution or the like by the TiN film M3c. Further, it is possible to improve the wettability of a solder and the shear strength after solder formation of the second pad portion PAD2 by the Au films 53a and 53b.

摘要翻译： 防止了TEG上的焊盘部分的腐蚀，并且提高了焊料的润湿性和实际装置的焊盘部分的焊料形成之后的剪切强度。 半导体晶片的芯片区域CA上的第三层布线M3和划刻区域SA上的第三层布线M3分别由TiN膜M3a，Al合金膜M3b和TiN膜M3c构成。 作为芯片区域CA上的重新布线49的顶部的第二焊盘部分PAD2被清洁。 或者，通过电石喷溅法在其上形成Au膜53a。 此外，在形成Au膜53a之后，进行保留试验。 此后，形成Au膜53b，形成焊料凸块电极55。 结果，可以防止由TiN膜M3c由于电镀液等导致的TEG的划线区域SA上的第三层布线M3的第一焊盘部分PAD1的腐蚀。 此外，可以通过Au膜53a和53b改善焊料的润湿性和第二焊盘部分PAD2的焊料形成之后的剪切强度。

公开(公告)号：US08592984B2

公开(公告)日：2013-11-26

申请号：US13160497

申请日：2011-06-14

申请人： Hiromi Shigihara ,  Akira Yajima ,  Hisao Shigihara ,  Hiroshi Tsukamoto

发明人： Hiromi Shigihara ,  Akira Yajima ,  Hisao Shigihara ,  Hiroshi Tsukamoto

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48844 ,  H01L2224/49175 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0496 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2224/45015 ,  H01L2924/207

摘要： To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.

摘要翻译： 为了抑制以Cu为主要成分的重新布线所提供的用于外部耦合的Au焊盘的剥离。 在包括在Cu膜的顶部上层叠有第一Ni膜的双层膜的再布线表面上形成连接有导线的焊盘。 焊盘包括双层膜，其中Au膜层叠在第二Ni膜的顶部上并且整体形成以覆盖重新布线的顶表面和侧表面。 由此，重新布线和焊盘之间的接触面积增加，因此，焊盘难以从重新布线剥离。

公开(公告)号：US08530081B2

公开(公告)日：2013-09-10

申请号：US12411116

申请日：2009-03-25

申请人： Hirotaka Hayashida ,  Akira Yajima

发明人： Hirotaka Hayashida ,  Akira Yajima

IPC分类号： H01M2/16

CPC分类号： H01M10/0431 ,  H01M4/0404 ,  H01M4/043 ,  H01M4/13 ,  H01M4/131 ,  H01M4/139 ,  H01M10/0436 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/025 ,  H01M2004/028

摘要： A nonaqueous electrolyte secondary battery includes an electrode assembly having a high-density positive electrode in which a positive electrode active material layer is formed on at least one surface of a positive electrode current collector, a high-density negative electrode in which a negative electrode active material layer is formed on at least one surface of a negative electrode current collector, and a separator interposed between the positive and negative electrodes, and has a structure in which the electrode assembly is impregnated with a nonaqueous electrolyte, wherein the specific surface area per unit area of the positive electrode active material layer of the positive electrode is 0.5 to 1.0 times the specific surface area per unit area of the negative electrode active material layer of the negative electrode which opposes the positive electrode with the separator sandwiched between them.

摘要翻译： 非水电解质二次电池包括具有高浓度正极的电极组件，其中在正极集电体的至少一个表面上形成正极活性物质层，其中负极活性物质的高密度负极 材料层形成在负极集电体的至少一个表面上，隔膜插入在正极和负极之间，并且具有其中电极组件浸渍有非水电解质的结构，其中每单位的比表面积 正极的正极活性物质层的面积为负极的负极活性物质层的单位面积的比表面积的0.5〜1.0倍，该负极活性物质层的正极与隔膜夹在正极之间。

公开(公告)号：US20090317685A1

公开(公告)日：2009-12-24

申请号：US12095190

申请日：2006-11-27

申请人： Akira Yajima ,  Nobuyasu Negishi ,  Hiroyuki Hasebe ,  Koichi Kawamura

发明人： Akira Yajima ,  Nobuyasu Negishi ,  Hiroyuki Hasebe ,  Koichi Kawamura

IPC分类号： H01M2/02

CPC分类号： H01M8/04089 ,  H01M8/04082 ,  H01M8/04201 ,  H01M8/04223 ,  H01M8/1009 ,  H01M8/1011 ,  H01M8/242 ,  H01M2008/1095 ,  Y02E60/523

摘要： A fuel cell (10) which comprises a membrane electrode assembly (16) composed of a fuel electrode, an air electrode, and an electrolyte membrane (15) sandwiched between the fuel electrode and the air electrode; and an oxidant gas blocking mechanism (25) superposed on the air electrode side and capable of blocking an oxidant gas to be supplied to the air electrode. The oxidant gas blocking mechanism (25) comprises fixed plates and, sandwiched therebetween, a frame having a movable plate disposed therein.

摘要翻译： 一种燃料电池（10），其包括由燃料电极，空气电极和夹在所述燃料电极和所述空气电极之间的电解质膜（15）构成的膜电极组件（16） 和氧化剂气体阻断机构（25），叠加在空气极侧，能够阻挡供给到空气极的氧化剂气体。 氧化剂气体阻断机构（25）包括固定板，夹在其间，具有设置在其中的可动板的框架。

公开(公告)号：US20090263688A1

公开(公告)日：2009-10-22

申请号：US12091514

申请日：2006-10-20

申请人： Akira Yajima ,  Yukinori Akamoto ,  Yuuichi Sato ,  Nobuyasu Negishi

发明人： Akira Yajima ,  Yukinori Akamoto ,  Yuuichi Sato ,  Nobuyasu Negishi

IPC分类号： H01M8/18 ,  H01M8/04

CPC分类号： H01M8/1009 ,  H01M8/04164 ,  H01M8/04186 ,  H01M8/04208

摘要： A fuel cell (10) has a fuel electrode, an air electrode, an electrolyte film (15) held between the fuel electrode and the air electrode, a liquid fuel tank (21) for containing liquid fuel, and a gas-liquid separation film (22) provided between the liquid fuel tank (21) and the fuel electrode. The gas-liquid separation film (22) exchanges heat between water vapor diffused from the fuel cell and the liquid fuel (F) and allows a vaporized component of the liquid fuel (F) to pass to the fuel electrode side.

摘要翻译： 燃料电池（10）具有燃料电极，空气电极，保持在燃料电极和空气极之间的电解质膜（15），用于容纳液体燃料的液体燃料箱（21）和气液分离膜 （22）设置在液体燃料箱（21）和燃料电极之间。 气液分离膜（22）在从燃料电池扩散的水蒸汽与液体燃料（F）之间进行热交换，使液体燃料（F）的汽化成分通过燃料电极侧。

公开(公告)号：US20060051669A1

公开(公告)日：2006-03-09

申请号：US11245040

申请日：2005-10-07

申请人： Hirotaka Hayashida ,  Akira Yajima

发明人： Hirotaka Hayashida ,  Akira Yajima

IPC分类号： H01M4/02

CPC分类号： H01M10/0431 ,  H01M4/0404 ,  H01M4/043 ,  H01M4/13 ,  H01M4/131 ,  H01M4/139 ,  H01M10/0436 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/025 ,  H01M2004/028

摘要： A nonaqueous electrolyte secondary battery includes an electrode assembly having a high-density positive electrode in which a positive electrode active material layer is formed on at least one surface of a positive electrode current collector, a high-density negative electrode in which a negative electrode active material layer is formed on at least one surface of a negative electrode current collector, and a separator interposed between the positive and negative electrodes, and has a structure in which the electrode assembly is impregnated with a nonaqueous electrolyte, wherein the specific surface area per unit area of the positive electrode active material layer of the positive electrode is 0.5 to 1.0 times the specific surface area per unit area of the negative electrode active material layer of the negative electrode which opposes the positive electrode with the separator sandwiched between them.

摘要翻译： 非水电解质二次电池包括具有高浓度正极的电极组件，其中在正极集电体的至少一个表面上形成正极活性物质层，其中负极活性物质的高密度负极 材料层形成在负极集电体的至少一个表面上，隔膜插入在正极和负极之间，并且具有其中电极组件浸渍有非水电解质的结构，其中每单位的比表面积 正极的正极活性物质层的面积为负极的负极活性物质层的单位面积的比表面积的0.5〜1.0倍，该负极活性物质层的正极与隔膜夹在正极之间。

公开(公告)号：US06770547B1

公开(公告)日：2004-08-03

申请号：US09698186

申请日：2000-10-30

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L2120

CPC分类号： H01L23/3157 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device.

摘要翻译： 一种半导体装置，其中可以在没有任何底部填充的情况下进行倒装芯片接合，并且其包括半导体器件，通过掩模印刷含有颗粒的电绝缘材料在半导体器件上形成的电绝缘层，以及形成在电学上的外部连接端子 绝缘层并与半导体器件的电极电连接。

公开(公告)号：US20120235278A1

公开(公告)日：2012-09-20

申请号：US13406356

申请日：2012-02-27

申请人： Hisao Shigihara ,  Hiromi Shigihara ,  Akira Yajima

发明人： Hisao Shigihara ,  Hiromi Shigihara ,  Akira Yajima

IPC分类号： H01L29/92 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L24/03 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49503 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0236 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03906 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/0556 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05566 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section 20A of the rewiring 20 is formed by a five-layer metal film (a barrier metal film 13, a seed film 14, a Cu film 15, a first Ni film 16, and a second Ni film 17) constituting the rewiring 20, the uppermost-layer second Ni film 17 has a larger area than that of the other metal films (the barrier metal film 13, the seed film 14, the Cu film 15, and the first Ni film 16). A solder bump 21 is connected to the surface of the second Ni film 17. At the end portion of the solder bump 21, a polyimide resin film 22 is formed directly under the second Ni film 17.

摘要翻译： 在其中凸起电极连接到重新布线的接地部分的半导体集成电路器件中，重新布线和焊料凸块之间的粘合强度得到改善。 再配线20的陆部20A由构成重新布线的五层金属膜（阻挡金属膜13，种子膜14，Cu膜15，第一Ni膜16，第二Ni膜17）形成 如图20所示，最上层的第二Ni膜17的面积比其他金属膜（阻挡金属膜13，种子膜14，Cu膜15，第一Ni膜16）的面积大。 焊料凸块21连接到第二Ni膜17的表面。在焊料凸块21的端部处，在第二Ni膜17的正下方形成聚酰亚胺树脂膜22。

公开(公告)号：US08063489B2

公开(公告)日：2011-11-22

申请号：US12628869

申请日：2009-12-01

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。

公开(公告)号：US20100133688A1

公开(公告)日：2010-06-03

申请号：US12628869

申请日：2009-12-01

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/488

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。