公开(公告)号：US09123763B2

公开(公告)日：2015-09-01

申请号：US13271952

申请日：2011-10-12

申请人： Chen-Hua Yu ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Ming-Da Cheng ,  Chih-Wei Lin

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Ming-Da Cheng ,  Chih-Wei Lin

IPC分类号： H01L23/48 ,  H01L21/683 ,  H01L23/538 ,  H01L21/56 ,  H01L25/10 ,  H01L21/36 ,  H01L23/31 ,  H01L21/48 ,  H01L23/00 ,  H05K1/18 ,  H01L23/498

CPC分类号： H01L25/50 ,  H01L21/31051 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5383 ,  H01L24/16 ,  H01L24/19 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/185 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/48

摘要： A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL.

摘要翻译： 封装封装（PoP）结构包括第一封装和第二封装。 第一包装包括第一模具，第二模具和芯材料。 芯材料具有第一表面和第二表面。 第一再分配层（RDL）位于第一表面上，第二RDL位于第二表面上。 第一模具设置在第一表面和第二表面之间的芯材料中。 第二管芯耦合到第一RDL和第二RDL之一。 第二包装包括第三管芯和插入件。 插入器具有第一侧和第二侧。 第三裸片耦合到插入器的第二侧。 第一封装通过耦合到插入件的第二侧和第一RDL的第一电连接器耦合到第二封装。

公开(公告)号：US10128206B2

公开(公告)日：2018-11-13

申请号：US12904506

申请日：2010-10-14

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Meng-Wei Chou ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Meng-Wei Chou ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/00

摘要： The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.

公开(公告)号：US20130181338A1

公开(公告)日：2013-07-18

申请号：US13349405

申请日：2012-01-12

申请人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/20

CPC分类号： H01L23/3192 ,  H01L21/56 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02331 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/10126 ,  H01L2224/11464 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/73104 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A structure comprises a post passivation interconnect layer formed over a semiconductor substrate, a metal bump formed over the post passivation interconnect layer and a molding compound layer formed over the semiconductor substrate. A lower portion of the metal bump is embedded in the molding compound layer and a middle portion of the metal bump is surrounded by a concave meniscus molding compound protection layer.

摘要翻译： 一种结构包括形成在半导体衬底上的后钝化互连层，形成在后钝化互连层上的金属凸块和形成在半导体衬底上的模塑复合层。 金属凸块的下部嵌入在模塑料层中，并且金属凸块的中间部分被凹弯月面模塑料保护层包围。

公开(公告)号：US20130122652A1

公开(公告)日：2013-05-16

申请号：US13298056

申请日：2011-11-16

申请人： Hsiu-Jen Lin ,  Chih-Wei Lin ,  Cheng-Ting Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Hsiu-Jen Lin ,  Chih-Wei Lin ,  Cheng-Ting Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/50

CPC分类号： H01L24/75 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/75283 ,  H01L2224/7598 ,  H01L2224/81005 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/8123 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/81

摘要： A method includes placing a cover over a lower package component, wherein the cover comprises an opening aligned to the lower package component. An upper package component is placed over the lower package component. The upper package component is aligned to the opening, and a solder region is dispose between the upper package component and the lower package component. The cover and the upper package component are exposed to a radiation to reflow the solder region.

摘要翻译： 一种方法包括将盖子放置在下部封装部件上，其中盖子包括与下部封装部件对准的开口。 上封装组件放置在下封装组件上。 上部封装部件与开口对准，并且焊接区域配置在上部封装部件和下部封装部件之间。 盖和上部封装部件暴露于辐射以回流焊接区域。

公开(公告)号：US08405199B2

公开(公告)日：2013-03-26

申请号：US12832231

申请日：2010-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在盖层的顶表面之上。

公开(公告)号：US20120322255A1

公开(公告)日：2012-12-20

申请号：US13161303

申请日：2011-06-15

申请人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1133 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2224/11

摘要： A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.

摘要翻译： 提供一种用于形成金属凸块的系统和方法。 一个实施例包括将导电材料附着到载体介质上，然后将导电材料接触到基底的导电区域。 然后使用接合工艺将导电材料的部分结合到导电区域，以在导电区域上形成导电盖，并且去除残留的导电材料和载体介质。 回流工艺用于将导电盖重新流到导电凸块中。

公开(公告)号：US08242011B2

公开(公告)日：2012-08-14

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层，所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US09991190B2

公开(公告)日：2018-06-05

申请号：US13475674

申请日：2012-05-18

申请人： Hui-Min Huang ,  Yen-Chang Hu ,  Chih-Wei Lin ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Shien Chen

发明人： Hui-Min Huang ,  Yen-Chang Hu ,  Chih-Wei Lin ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Shien Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L25/10

CPC分类号： H01L23/495 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/19 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The mechanisms of using an interposer frame to package a semiconductor die enables fan-out structures and reduces form factor for the packaged semiconductor die. The mechanisms involve using a molding compound to attach the semiconductor die to the interposer frame and forming a redistribution layer on one or both sides of the semiconductor die. The redistribution layer(s) in the package enables fan-out connections and formation of external connection structures. Conductive columns in the interposer frame assist in thermal management.

公开(公告)号：US08703546B2

公开(公告)日：2014-04-22

申请号：US12784314

申请日：2010-05-20

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/82 ,  H01L21/288

CPC分类号： H01L21/288 ,  C25D7/123 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/93 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.

摘要翻译： 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。

公开(公告)号：US20130093097A1

公开(公告)日：2013-04-18

申请号：US13271952

申请日：2011-10-12

申请人： Chen-Hua Yu ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Ming-Da Cheng ,  Chih-Wei Lin

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Ming-Da Cheng ,  Chih-Wei Lin

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L25/50 ,  H01L21/31051 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5383 ,  H01L24/16 ,  H01L24/19 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/185 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/48

摘要： A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL.

摘要翻译： 封装封装（PoP）结构包括第一封装和第二封装。 第一包装包括第一模具，第二模具和芯材料。 芯材料具有第一表面和第二表面。 第一再分配层（RDL）位于第一表面上，第二RDL位于第二表面上。 第一模具设置在第一表面和第二表面之间的芯材料中。 第二管芯耦合到第一RDL和第二RDL之一。 第二包装包括第三管芯和插入件。 插入器具有第一侧和第二侧。 第三裸片耦合到插入器的第二侧。 第一封装通过耦合到插入件的第二侧和第一RDL的第一电连接器耦合到第二封装。