公开(公告)号：US20150270193A1

公开(公告)日：2015-09-24

申请号：US14729729

申请日：2015-06-03

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2224/05647 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A component can include a substrate having an opening extending between first and second surfaces thereof, and an electrically conductive via having first and second portions. The first portion can include a first layer structure extending within the opening and at least partially along an inner wall of the opening, and a first principal conductor extending within the opening and at least partially overlying the first layer structure. The first portion can be exposed at the first surface and can have a lower surface located between the first and second surfaces. The second portion can include a second layer structure extending within the opening and at least partially along the lower surface of the first portion, and a second principal conductor extending within the opening and at least partially overlying the second layer structure. The second portion can be exposed at the second surface.

Abstract translation: 组件可以包括具有在其第一和第二表面之间延伸的开口的基板和具有第一和第二部分的导电通孔。 第一部分可以包括在开口内延伸并且至少部分地沿着开口的内壁延伸的第一层结构，以及在开口内延伸并且至少部分地覆盖第一层结构的第一主导体。 第一部分可以在第一表面处露出并且可以具有位于第一和第二表面之间的下表面。 第二部分可以包括在开口内延伸并且至少部分地沿着第一部分的下表面延伸的第二层结构，以及在开口内延伸并且至少部分地覆盖第二层结构的第二主导体。 第二部分可以在第二表面露出。

公开(公告)号：US20150270069A1

公开(公告)日：2015-09-24

申请号：US14733269

申请日：2015-06-08

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh

IPC: H01G4/33 ,  H01G4/38 ,  H01G4/08

CPC classification number: H01G4/33 ,  H01G4/01 ,  H01G4/08 ,  H01G4/10 ,  H01G4/385 ,  H01L28/60 ,  H01L28/92 ,  H01M4/80

Abstract: Capacitors and methods of making the same are disclosed herein. In one embodiment, a capacitor comprises a structure having first and second oppositely facing surfaces and a plurality of pores each extending in a first direction from the first surface towards the second surface, and each having pore having insulating material extending along a wall of the pore; a first conductive portion comprising an electrically conductive material extending within at least some of the pores; and a second conductive portion comprising a region of the structure consisting essentially of aluminum surrounding individual pores of the plurality of pores, the second conductive portion electrically isolated from the first conductive portion by the insulating material extending along the walls of the pores.

Abstract translation: 电容器及其制造方法在此公开。 在一个实施例中，电容器包括具有第一和第二相对面的表面和多个孔，每个孔从第一表面朝向第二表面沿第一方向延伸，并且每个孔具有沿孔的壁延伸的绝缘材料 ; 第一导电部分，包括在至少一些孔内延伸的导电材料; 以及第二导电部分，其包括主要由围绕所述多个孔的单个孔的铝构成的结构的区域，所述第二导电部分通过沿着所述孔的壁延伸的绝缘材料与所述第一导电部分电隔离。

公开(公告)号：US09123780B2

公开(公告)日：2015-09-01

申请号：US13720346

申请日：2012-12-19

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Pezhman Monadgemi ,  Terrence Caskey ,  Fatima Lina Ayatollahi ,  Belgacem Haba ,  Charles G. Woychik ,  Michael Newman

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/36 ,  H01L23/367

CPC classification number: H01L23/49827 ,  H01L21/76829 ,  H01L21/76898 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/49838 ,  H01L23/49866 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A method for making an interconnect element includes depositing a thermally conductive layer on an in-process unit. The in-process unit includes a semiconductor material layer defining a surface and edges surrounding the surface, a plurality of conductive elements, each conductive element having a first portion extending through the semiconductor material layer and a second portion extending from the surface of the semiconductor material layer. Dielectric coatings extend over at least the second portion of each conductive element. The thermally conductive layer is deposited on the in-process unit at a thickness of at least 10 microns so as to overlie a portion of the surface of the semiconductor material layer between the second portions of the conductive elements with the dielectric coatings positioned between the conductive elements and the thermally conductive layer.

Abstract translation: 制造互连元件的方法包括将热传导层沉积在处理单元上。 处理单元包括限定表面和围绕表面的边缘的半导体材料层，多个导电元件，每个导电元件具有延伸穿过半导体材料层的第一部分和从半导体材料的表面延伸的第二部分 层。 电介质涂层至少延伸到每个导电元件的第二部分。 导热层以至少10微米的厚度沉积在处理单元上，以覆盖在导电元件的第二部分之间的半导体材料层的表面的一部分，其中介电涂层位于导电 元件和导热层。

公开(公告)号：US09076785B2

公开(公告)日：2015-07-07

申请号：US13711042

申请日：2012-12-11

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh

IPC: H01L23/04 ,  H01L23/498

CPC classification number: H01L23/481 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2224/05647 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A component can include a substrate having an opening extending between first and second surfaces thereof, and an electrically conductive via having first and second portions. The first portion can include a first layer structure extending within the opening and at least partially along an inner wall of the opening, and a first principal conductor extending within the opening and at least partially overlying the first layer structure. The first portion can be exposed at the first surface and can have a lower surface located between the first and second surfaces. The second portion can include a second layer structure extending within the opening and at least partially along the lower surface of the first portion, and a second principal conductor extending within the opening and at least partially overlying the second layer structure. The second portion can be exposed at the second surface.

Abstract translation: 组件可以包括具有在其第一和第二表面之间延伸的开口的基板和具有第一和第二部分的导电通孔。 第一部分可以包括在开口内延伸并且至少部分地沿着开口的内壁延伸的第一层结构，以及在开口内延伸并且至少部分地覆盖第一层结构的第一主导体。 第一部分可以在第一表面处露出并且可以具有位于第一和第二表面之间的下表面。 第二部分可以包括在开口内延伸并且至少部分地沿着第一部分的下表面延伸的第二层结构，以及在开口内延伸并且至少部分地覆盖第二层结构的第二主导体。 第二部分可以在第二表面露出。

公开(公告)号：US09070676B2

公开(公告)日：2015-06-30

申请号：US14050193

申请日：2013-10-09

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L21/768

CPC classification number: H01L24/11 ,  H01L21/3213 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/0348 ,  H01L2224/0362 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05664 ,  H01L2224/05686 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11013 ,  H01L2224/1111 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/81815 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00

Abstract: An apparatus relating generally to a substrate is disclosed. In this apparatus, a first metal layer is on the substrate. The first metal layer has an opening. The opening of the first metal layer has a bottom and one or more sides extending from the bottom. A second metal layer is on the first metal layer. The first metal layer and the second metal layer provide a bowl-shaped structure. An inner surface of the bowl-shaped structure is defined responsive to the opening of the first metal layer and the second metal layer thereon. The opening of the bowl-shaped structure is configured to receive and at least partially retain a bonding material during a reflow process.

Abstract translation: 公开了一般涉及基板的装置。 在该装置中，第一金属层位于基板上。 第一金属层具有开口。 第一金属层的开口具有从底部延伸的底部和一个或多个侧面。 第二金属层位于第一金属层上。 第一金属层和第二金属层提供碗形结构。 碗形结构的内表面是响应于其上的第一金属层和第二金属层的开口而定义的。 碗形结构的开口构造成在回流过程期间接收并且至少部分地保持接合材料。

公开(公告)号：US20150162241A1

公开(公告)日：2015-06-11

申请号：US14627252

申请日：2015-02-20

Applicant: INVENSAS CORPORATION

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Michael Newman ,  Pezhman Monadgemi ,  Terrence Caskey

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/532

CPC classification number: H01L21/76877 ,  H01L21/32055 ,  H01L21/76802 ,  H01L21/76841 ,  H01L21/76858 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/525 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).

Abstract translation: 本文公开了其形成的结构和方法。 在一个实施例中，结构可以包括具有第一和第二相对面的表面的区域。 屏障区域可以覆盖该区域。 合金区域可以覆盖阻挡区域。 合金区域可以包括第一金属和选自硅（Si），锗（Ge），铟（Id），硼（B），砷（As），锑（Sb），碲的一种或多种元素 （Te）或镉（Cd）。

公开(公告)号：US09030017B2

公开(公告)日：2015-05-12

申请号：US13675445

申请日：2012-11-13

Applicant: Invensas Corporation

Inventor： Belgacem Haba ,  Cyprian Emeka Uzoh

IPC: H01L23/532 ,  H01L21/50 ,  H01L23/498

CPC classification number: H01L25/50 ,  H01L21/50 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/53209 ,  H01L24/83 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/808 ,  H01L2224/8385 ,  H01L2224/8389 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/013 ,  H01L2924/15311 ,  H01L2924/2064

Abstract: An assembly includes a substrate having a substrate conductor and a contact at a first surface and a terminal at a second surface for electrically interconnecting the assembly with a component external to the assembly, at least one of the substrate conductor or the contact being electrically connected with the terminal; a first element having a first surface facing the first surface of the substrate and having a first conductor at the first surface and a second conductor at a second surface, an interconnect structure extending through the first element electrically connecting the first and second conductors; an adhesive layer bonding the first surfaces of the first element and the substrate, at least portions of the first conductor and the substrate conductor being disposed beyond an edge of the adhesive layer; and a continuous electroless plated metal region extending between the first conductor and the substrate conductor.

Abstract translation: 组件包括具有衬底导体的衬底和在第一表面处的接触件和在第二表面处的端子，用于将组件与组件外部的部件电连接，衬底导体或接触件中的至少一个与 终点站; 第一元件，其具有面向基板的第一表面的第一表面，并且在第一表面具有第一导体，在第二表面具有第二导体，互连结构，延伸穿过第一元件，电连接第一和第二导体; 粘接所述第一元件和所述基板的所述第一表面的粘合剂层，所述第一导体和所述基板导体的至少一部分设置在所述粘合剂层的边缘之外; 以及在第一导体和衬底导体之间延伸的连续化学镀金属区域。

公开(公告)号：US09024205B2

公开(公告)日：2015-05-05

申请号：US13692148

申请日：2012-12-03

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh

IPC: H05K1/16 ,  H05K13/04 ,  H01L23/10 ,  H01L21/50 ,  H01L23/498 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H01L21/48

CPC classification number: H05K13/046 ,  H01L21/4853 ,  H01L21/50 ,  H01L21/76898 ,  H01L23/10 ,  H01L23/481 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L2224/02372 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1319 ,  H01L2224/14131 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29138 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81075 ,  H01L2224/8112 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/83075 ,  H01L2224/8312 ,  H01L2224/83193 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/381 ,  H01L2924/04953 ,  H01L2924/01071 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01031 ,  H01L2924/01034 ,  H01L2924/00012 ,  H01L2924/07025 ,  H01L2224/05552

Abstract: A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

Abstract translation: 微电子组件包括具有表面和第一导电元件的第一基板和具有表面和第二导电元件的第二基板。 组件还包括连接到第一和第二导电元件的导电合金块。 合金质量的第一和第二材料的熔点低于合金的熔点。 第一材料的浓度在朝向第一导电元件设置的位置处的相对较高的量的浓度变化到朝向第二导电元件的相对较低的量，并且第二材料的浓度在浓度上从相对较高的量在 朝向第二导电元件朝向第一导电元件朝向相对较小的量设置的位置。

公开(公告)号：US08981564B2

公开(公告)日：2015-03-17

申请号：US13897956

申请日：2013-05-20

Applicant: Invensas Corporation

Inventor： Charles G. Woychik ,  Cyprian Emeka Uzoh ,  Michael Newman ,  Pezhman Monadgemi ,  Terrence Caskey

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/32055 ,  H01L21/76802 ,  H01L21/76841 ,  H01L21/76858 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/525 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).

Abstract translation: 本文公开了其形成的结构和方法。 在一个实施例中，结构可以包括具有第一和第二相对面的表面的区域。 屏障区域可以覆盖该区域。 合金区域可以覆盖阻挡区域。 合金区域可以包括第一金属和选自硅（Si），锗（Ge），铟（Id），硼（B），砷（As），锑（Sb），碲的一种或多种元素 （Te）或镉（Cd）。

公开(公告)号：US20140262457A1

公开(公告)日：2014-09-18

申请号：US13797355

申请日：2013-03-12

Applicant: INVENSAS CORPORATION

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Belgacem Haba ,  Ilyas Mohammed

IPC: H05K1/09 ,  H05K1/11

CPC classification number: H05K1/0306 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/13 ,  H01L23/3731 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5381 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/17 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H05K1/09 ,  H05K1/112 ,  H05K1/115 ,  H05K3/4007 ,  H05K3/42 ,  H05K2201/09545 ,  H05K2201/10378 ,  H05K2203/0323

Abstract: Interposers and methods of making the same are disclosed herein. In one embodiment, an interposer includes a region having first and second oppositely facing surfaces and a plurality of pores, each pore extending in a first direction from the first surface towards the second surface, wherein alumina extends along a wall of each pore; a plurality of electrically conductive connection elements extending in the first direction, consisting essentially of aluminum and being electrically isolated from one another by at least the alumina; a first conductive path provided at the first surface for connection with a first component external to the interposer; and a second conductive path provided at the second surface for connection with a second component external to the interposer, wherein the first and second conductive paths are electrically connected through at least some of the connection elements.

Abstract translation: 中间体及其制备方法在本文中公开。 在一个实施例中，插入件包括具有第一和第二相对面的表面和多个孔的区域，每个孔从第一表面朝向第二表面沿第一方向延伸，其中氧化铝沿每个孔的壁延伸; 多个导电连接元件，其沿第一方向延伸，主要由铝构成，并通过至少氧化铝彼此电隔离; 第一导电路径，设置在第一表面处，用于与插入件外部的第一部件连接; 以及设置在所述第二表面处用于与所述插入件外部的第二部件连接的第二导电路径，其中所述第一和第二导电路径通过至少一些所述连接元件电连接。