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公开(公告)号:US07638862B2
公开(公告)日:2009-12-29
申请号:US11941257
申请日:2007-11-16
申请人: Ken M. Lam
发明人: Ken M. Lam
IPC分类号: H01L23/495
CPC分类号: H01L24/49 , H01L23/49503 , H01L23/4952 , H01L23/49531 , H01L23/49551 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48639 , H01L2224/48644 , H01L2224/48669 , H01L2224/48739 , H01L2224/48744 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48869 , H01L2224/4911 , H01L2224/73265 , H01L2224/85201 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85469 , H01L2224/92247 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/00 , H01L2224/45099 , H01L2924/00015 , H01L2924/2075 , H01L2924/00012
摘要: An electrical package for an integrated circuit die which comprises a die-attach paddle for mounting the integrated circuit die. The die-attach paddle has at least one down-set area located on a periphery of the die-attach paddle. The down-set area has an upper surface and a lower surface, with the upper surface configured to electrically couple a first end of a first electrically conductive lead wire. A second end of the first electrically conductive lead wire is bonded to the integrated circuit die. The upper surface is further configured to electrically couple a first end of a second electrically conductive lead wire and a second end of the second electrically conductive lead wire is bonded to a lead finger of the electrical package.
摘要翻译: 一种用于集成电路管芯的电气封装,其包括用于安装集成电路管芯的管芯附接焊盘。 管芯附接板具有至少一个位于芯片附接板的周边上的下降区域。 下降区域具有上表面和下表面,其中上表面被配置为电耦合第一导电引线的第一端。 第一导电引线的第二端接合到集成电路管芯。 上表面还被配置为电耦合第二导电引线的第一端,并且第二导电引线的第二端被接合到电气封装的引线指。
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82.Method for fabricating board on chip (BOC) semiconductor package with circuit side polymer layer 有权
标题翻译: 具有电路侧聚合物层的片上芯片(BOC)半导体封装的方法公开(公告)号:US07537966B2
公开(公告)日:2009-05-26
申请号:US11511005
申请日:2006-08-28
申请人: Mike Connell , Tongbi Jiang
发明人: Mike Connell , Tongbi Jiang
IPC分类号: H01L21/00
CPC分类号: H01L24/48 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/13 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/4951 , H01L23/49816 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/83 , H01L24/85 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68377 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05111 , H01L2224/05118 , H01L2224/05155 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/06135 , H01L2224/06136 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/451 , H01L2224/45111 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48471 , H01L2224/48472 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/4943 , H01L2224/73215 , H01L2224/83101 , H01L2224/8319 , H01L2224/8385 , H01L2224/85444 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2225/1023 , H01L2225/107 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10161 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2224/83 , H01L2224/85 , H01L2924/07025 , H01L2924/0635 , H01L2924/00 , H01L2224/48227 , H01L2924/00012 , H01L2924/3512 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744 , H01L2224/29099 , H01L2224/29199 , H01L2924/20754 , H01L2224/45099 , H01L2224/4554
摘要: A method for fabricating a BOC package includes the steps of providing a semiconductor die having planarized bumps encapsulated in a polymer layer, and providing a substrate having a plurality of conductors and an opening. The method also includes the steps of attaching the die to the substrate in a BOC configuration, wire bonding wires through the opening to the conductors and the bumps, and forming a die encapsulant on the die.
摘要翻译: 一种用于制造BOC封装的方法包括以下步骤:提供具有封装在聚合物层中的平坦化凸块的半导体管芯,以及提供具有多个导体和开口的基板。 该方法还包括以BOC配置将裸片附接到衬底上的步骤,通过开口将线接合到导体和凸块,以及在管芯上形成管芯密封剂。
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83.Method for fabricating semiconductor package with circuit side polymer layer 有权
标题翻译: 具有电路侧聚合物层的半导体封装的制造方法公开(公告)号:US07479413B2
公开(公告)日:2009-01-20
申请号:US11242224
申请日:2005-10-03
申请人: Mike Connell , Tongbi Jiang
发明人: Mike Connell , Tongbi Jiang
IPC分类号: H01L21/00
CPC分类号: H01L24/48 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/13 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/4951 , H01L23/49816 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/83 , H01L24/85 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68377 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05111 , H01L2224/05118 , H01L2224/05155 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/06135 , H01L2224/06136 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/451 , H01L2224/45111 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48471 , H01L2224/48472 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/4943 , H01L2224/73215 , H01L2224/83101 , H01L2224/8319 , H01L2224/8385 , H01L2224/85444 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2225/1023 , H01L2225/107 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10161 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2224/83 , H01L2224/85 , H01L2924/07025 , H01L2924/0635 , H01L2924/00 , H01L2224/48227 , H01L2924/00012 , H01L2924/3512 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744 , H01L2224/29099 , H01L2224/29199 , H01L2924/20754 , H01L2224/45099 , H01L2224/4554
摘要: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.
摘要翻译: 半导体封装包括衬底,附接的芯片和引线键合到衬底,以及封装模具的管芯密封剂。 芯片包括具有芯片触点图案的电路侧,与芯片触点接合的平坦化引线接合触点,以及被配置为应力缺陷屏障的电路侧上的平坦化聚合物层。 制造封装的方法包括以下步骤:在芯片上形成凸块,将凸块封装在聚合物层中,然后平坦化聚合物层和凸块以形成平坦化的引线接合触点。 该方法还包括以下步骤:将管芯附着和引线接合到衬底,然后在管芯上形成管芯密封剂。
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公开(公告)号:US20080064145A1
公开(公告)日:2008-03-13
申请号:US11941234
申请日:2007-11-16
申请人: Ken Lam
发明人: Ken Lam
IPC分类号: H01L21/00
CPC分类号: H01L24/49 , H01L23/49503 , H01L23/4952 , H01L23/49531 , H01L23/49551 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48639 , H01L2224/48644 , H01L2224/48669 , H01L2224/48739 , H01L2224/48744 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48869 , H01L2224/4911 , H01L2224/73265 , H01L2224/85201 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85469 , H01L2224/92247 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/00 , H01L2224/45099 , H01L2924/00015 , H01L2924/2075 , H01L2924/00012
摘要: An electrical package for an integrated circuit die which comprises a die-attach paddle for mounting the integrated circuit die. The die-attach paddle has at least one down-set area located on a periphery of the die-attach paddle. The down-set area has an upper surface and a lower surface, with the upper surface configured to electrically couple a first end of a first electrically conductive lead wire. A second end of the first electrically conductive lead wire is bonded to the integrated circuit die. The upper surface is further configured to electrically couple a first end of a second electrically conductive lead wire and a second end of the second electrically conductive lead wire is bonded to a lead finger of the electrical package.
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公开(公告)号:US20060202346A1
公开(公告)日:2006-09-14
申请号:US11075072
申请日:2005-03-08
申请人: Chien-Hsueh Shih , Minghsing Tsai , Hung-Wen Su , Shau-Lin Shue
发明人: Chien-Hsueh Shih , Minghsing Tsai , Hung-Wen Su , Shau-Lin Shue
IPC分类号: H01L23/48
CPC分类号: H01L23/53238 , H01L24/05 , H01L2224/05083 , H01L2224/05144 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05176 , H01L2224/05181 , H01L2224/05184 , H01L2224/05644 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05669 , H01L2224/05676 , H01L2224/05681 , H01L2224/05684 , H01L2224/45124 , H01L2224/45147 , H01L2224/48744 , H01L2224/48755 , H01L2224/48757 , H01L2224/48764 , H01L2224/48769 , H01L2224/48781 , H01L2224/48784 , H01L2224/48844 , H01L2224/48855 , H01L2224/48857 , H01L2224/48864 , H01L2224/48869 , H01L2224/48881 , H01L2224/48884 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要: A conductive polymer between two metallic layers acts a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection structure to prevent copper diffusion into any overlying layers and improve adhesive characteristics between the copper and any overlying layers.
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公开(公告)号:US07045903B2
公开(公告)日:2006-05-16
申请号:US09917419
申请日:2001-07-30
CPC分类号: H01L24/48 , H01L23/4952 , H01L23/49562 , H01L23/5286 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/49 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05171 , H01L2224/0518 , H01L2224/05184 , H01L2224/05187 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/4554 , H01L2224/45669 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48669 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48864 , H01L2224/49111 , H01L2224/49113 , H01L2224/85205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/30105 , H01L2924/00014 , H01L2924/01007 , H01L2924/04953 , H01L2924/00 , H01L2224/48869 , H01L2924/20755 , H01L2924/00015 , H01L2924/2075
摘要: A semiconductor integrated circuit comprises contact pads located over active components, which are positioned to minimize the distance for power delivery between a selected pad and one or more corresponding active components, to which the power is to be delivered. This minimum distance further enhances dissipation of thermal energy released by the active components.More specifically, a semiconductor integrated circuit comprises a laterally organized power transistor, an array of power supply contact pads distributed over the transistor, means for providing a distributed, predominantly vertical current flow from the contact pads to the transistor, and means for connecting a power source to each of the contact pads. Positioning the power supply contact pads directly over the active power transistor further saves precious silicon real estate area. The means for vertical current flow include contact pads made of a stack of metal layers comprising refractory metals for adhesion, copper and nickel as stress-absorbing metals, and gold or palladium as bondable and solderable outermost metals. The means for connecting a power source include wire bonding and solder ball interconnection.
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87.Semiconductor package with circuit side polymer layer and wafer level fabrication method 失效
标题翻译: 具有电路侧聚合物层和晶圆级制造方法的半导体封装公开(公告)号:US06995041B2
公开(公告)日:2006-02-07
申请号:US10426320
申请日:2003-04-30
申请人: Mike Connell , Tongbi Jiang
发明人: Mike Connell , Tongbi Jiang
IPC分类号: H01L23/495
CPC分类号: H01L24/48 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/13 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/4951 , H01L23/49816 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/83 , H01L24/85 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68377 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05111 , H01L2224/05118 , H01L2224/05155 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/06135 , H01L2224/06136 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/451 , H01L2224/45111 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48471 , H01L2224/48472 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/4943 , H01L2224/73215 , H01L2224/83101 , H01L2224/8319 , H01L2224/8385 , H01L2224/85444 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2225/1023 , H01L2225/107 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10161 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2224/83 , H01L2224/85 , H01L2924/07025 , H01L2924/0635 , H01L2924/00 , H01L2224/48227 , H01L2924/00012 , H01L2924/3512 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744 , H01L2224/29099 , H01L2224/29199 , H01L2924/20754 , H01L2224/45099 , H01L2224/4554
摘要: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.
摘要翻译: 半导体封装包括衬底,附接的芯片和引线键合到衬底,以及封装模具的管芯密封剂。 芯片包括具有芯片触点图案的电路侧,与芯片触点接合的平坦化引线接合触点,以及被配置为应力缺陷屏障的电路侧上的平坦化聚合物层。 制造封装的方法包括以下步骤:在芯片上形成凸块,将凸块封装在聚合物层中,然后平坦化聚合物层和凸块以形成平坦化的引线接合触点。 该方法还包括以下步骤:将管芯附着和引线接合到衬底,然后在管芯上形成管芯密封剂。
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88.Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof 有权
标题翻译: 制造BGA的板以及使用该半导体器件的制造方法公开(公告)号:US06975022B2
公开(公告)日:2005-12-13
申请号:US09809917
申请日:2001-03-16
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
CPC分类号: H01L24/32 , H01L21/4832 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68377 , H01L2224/05554 , H01L2224/16225 , H01L2224/16245 , H01L2224/32057 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/484 , H01L2224/48463 , H01L2224/48472 , H01L2224/48599 , H01L2224/48639 , H01L2224/48644 , H01L2224/48655 , H01L2224/48669 , H01L2224/48699 , H01L2224/48739 , H01L2224/48744 , H01L2224/48755 , H01L2224/48769 , H01L2224/49171 , H01L2224/73265 , H01L2224/83385 , H01L2224/85201 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/85469 , H01L2224/92 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10161 , H01L2924/14 , H01L2924/15183 , H01L2924/15184 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2224/81 , H01L2224/92247 , H01L2924/00 , H01L2924/01026 , H01L2924/00012
摘要: A device containing a flat member is provided, having a pattern for a bonding pad, a wiring, and an electrode, by half-etching through the flat member.
摘要翻译: 提供一种包含平坦部件的装置,其具有用于焊盘,布线和电极的图案,通过半平板部件的半蚀刻。
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公开(公告)号:US06927493B2
公开(公告)日:2005-08-09
申请号:US10678709
申请日:2003-10-03
IPC分类号: H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号: H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05083 , H01L2224/05111 , H01L2224/05116 , H01L2224/05118 , H01L2224/05123 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05556 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48669 , H01L2224/48739 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48864 , H01L2224/85205 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/48869 , H01L2224/48744
摘要: A metal structure (600) for a bonding pad on integrated circuit wafers, which have interconnecting metallization (101) protected by an insulating layer (102) and selectively exposed by windows in the insulating layer. The structure comprises a patterned seed metal layer (104) positioned on the interconnecting metallization exposed by the window so that the seed metal establishes ohmic contact to the metallization as well as a practically impenetrable seal of the interface between the seed metal and the insulating layer. Further, a metal stud (301) is formed on the seed metal and aligned with the window. The metal stud is conformally covered by a barrier metal layer (501) and an outermost bondable metal layer (502).
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公开(公告)号:US20050106851A1
公开(公告)日:2005-05-19
申请号:US10910454
申请日:2004-08-04
申请人: Howard Test , Gonzalo Amador , Willmar Subido
发明人: Howard Test , Gonzalo Amador , Willmar Subido
IPC分类号: H01L23/52 , H01L21/288 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L23/532 , H01L21/44
CPC分类号: H01L23/53238 , H01L21/288 , H01L23/53233 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05082 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/0518 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0568 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4845 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48669 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/4878 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/78252 , H01L2224/78253 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , H01L2924/01004 , H01L2224/78 , H01L2924/00 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744 , H01L2924/206
摘要: A robust, reliable and low-cost metal structure and process enabling electrical wire/ribbon connections to the interconnecting copper metallization of integrated circuits. The structure comprises a layer of barrier metal that resists copper diffusion, deposited on the non-oxidized copper surface in a thickness such that the barrier layer reduces the diffusion of copper at 250° C. by more than 80% compared with the absence of the barrier metal. The structure further comprises an outermost bondable layer which reduces the diffusion of the barrier metal at 250° C. by more than 80% compared with the absence of the bondable metal. Finally, a metal wire is bonded to the outermost layer for metallurgical connection. The barrier metal is selected from a group consisting of nickel, cobalt, chromium, molybdenum, titanium, tungsten, and alloys thereof. The outermost bondable metal layer is selected from a group consisting of gold, platinum, and silver.
摘要翻译: 坚固,可靠和低成本的金属结构和工艺,使电线/带能够连接到集成电路的互连铜金属化。 该结构包括阻挡铜扩散的层,其沉积在非氧化的铜表面上,其厚度使得阻挡层将铜在250℃下的扩散减少了80%以上,与不存在 屏障金属。 该结构还包括最外面的可结合层,与不存在可结合金属相比,阻挡金属在250℃下的扩散减少大于80%。 最后,将金属丝结合到最外层用于冶金连接。 阻挡金属选自镍,钴,铬,钼,钛,钨及其合金。 最外层的可焊接金属层选自金,铂和银。
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