Abstract:
A contact grid array interconnect (100) element for mounting an IC package (130) to a substrate. The interconnect comprises an insulating stand-off post (110) having opposing ends. An electrically conductive core (105) is embedded in and traverses the post. Conductive endplates (125, 127) are located on the opposing ends (117, 120) of the post and contact the core.
Abstract:
Die Erfindung betrifft eine Leiterplatte, insbesondere Keramikplatte, mit einer ersten Schicht (1) , wobei die erste Schicht eine Metallschicht ist und zur elektrisch leitenden Verbindung über eine Laserschweißung (4) mit einem Anschluss vorgesehen ist. Es ist eine bekannte Tatsache, dass bei Laserschweißungen eine genaue Kontrolle der Laserparameter innerhalb der erlaubten Toleranzen sehr schwierig ist. Als problematisch erweist sich insbesondere eine Laserschweißung mit zu hoher Energie aufgrund standardmäßiger Abweichung. Es wird eine Leiterplatte angegeben, die eine zweite Schicht (9, 11, 12, 20) mit mindestens einer Schutzfunktion zur Verhinderung schädlicher Einwirkungen der Laserschweißung (4; 14 bis 19) aufweist, da die zweite Schicht zur stoffflüssigen Verbindung zumindest mit dem Anschluss mittels der Laserschweißung vorgesehen ist. Zudem entstehen Vorteile bei Anschluss-Übersteiger-Kombinationen oder Anschlüssen mit einer Isolationsschicht (6).
Abstract:
The hybrid mounting (10) is intended for an electronic circuit of which the terminals have to be connected to a printed circuit board or the like. In order to obtain an hybrid mounting (10) of reduced dimensions and a low loss ratio during the production process, the mounting is comprised of two separated plate-shaped substrates which include electronic components and which are arranged back to back one against the other. The substrates are electrically connected by means of U-shaped metal contact parts at contact points arranged on at least one side (10a) on edges of those substrates arranged at a same level.
Abstract:
A bus bar wiring board comprising a bus bar pattern for electric wiring formed in a predetermined shape, and a bus bar piece formed separately from the bus bar pattern and electrically connected and secured to the bus bar pattern. A method of producing the bus bar wiring board comprising a bus bar pattern punching step for punching a bus bar pattern for electric wiring that is laid out in a predetermined shape out of an electrically conducting metal plate, a bus bar piece punching step for punching a bus bar piece laid out in a predetermined shape in a remaining space on the electrically conducting metal plate, and a connection step for electrically connecting and securing together the bus bar pattern punched in the bus bar pattern punching step and the bus bar pieve punched in the bus bar piece punching step, whereby reducing the waste in the electrically conducting metal plate out of which the bus bar patterns are punched and decreasing the cost of production or the cost of a product.
Abstract:
High density packaging of semiconductor devices on an interconnection substrate is achieved by stacking bare semiconductor devices (402, 404, 406, 408) atop one another so that an edge portion of a semiconductor device extends beyond the semiconductor device that it is stacked atop. Elongate interconnection elements (422, 424, 426, 428) extend from the bottommost one of the semiconductor devices, and from the exposed edge portions of the semiconductor devices stacked atop the bottommost semiconductor device. Free-ends of the elongate interconnection elements make electrical contact with terminals of an interconnection substrate (430), such as a PCB. The elongate interconnection elements extending from each of the semiconductor devices are sized so as to reach the terminals of the PCB, which may be plated through holes (432, 434, 436, 438). The elongate interconnection elements are suitably resilient contact structures, and may be composite interconnection elements comprising a relatively soft core (e.g., a gold wire) and a relatively hard overcoat (e.g., a nickel plating).
Abstract:
A method and apparatus are provided for connecting area grid array semiconductor chips (30) to a printed wire board (40). A compliant lead matrix (10) includes a carrier (12) and a plurality of conductive leads (14) arranged parallel to one another and secured relative to the carrier (12) in the form of a matrix. The method includes orienting a first side (16) of the lead matrix (10) to be aligned with a reciprocal matrix of conductive surface pads (36) on the area grid array semiconductor chip (30). First ends (20) of the leads are electrically connected to the conductive surface pads (36) of the area grid array chip (30). The second side (18) of the lead matrix (10) is oriented to be aligned with a reciprocal matrix of conductive surface pads (46) on a printed wire board (40). Second ends (22) of the leads (14) of the lead matrix (10) are electrically connected to the conductive surface pads (46) of the printed wire board (40) thereby establishing an electrical connection between the area grid array chip (30) and the printed wire board (40).
Abstract:
Resilient contact structures (430) are mounted directly to bond pads (410) on semiconductor dies (402a, 402b), prior to the dies (402a, 402b) being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies (402a, 402b) to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies (702, 704) with a circuit board (710) or the like having a plurality of terminals (712) disposed on a surface thereof. Subsequently, the semiconductor dies (402a, 402b) may be singulated from the semiconductor wafer, whereupon the same resilient contact structures (430) can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements (430) of the present invention as the resilient contact structures, burn-in (792) can be performed at temperatures of at least 150 DEG C, and can be completed in less than 60 minutes.