公开(公告)号：WO2015107290A2

公开(公告)日：2015-07-23

申请号：PCT/FR2015050052

申请日：2015-01-09

Applicant: COMMISSARIAT L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： DEGUET CHRYSTEL ,  FOURNEL FRANK ,  MORICEAU HUBERT ,  SANCHEZ LOIC

IPC: H01L21/58

CPC classification number: H01L24/80 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/74 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0345 ,  H01L2224/03616 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/0519 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05687 ,  H01L2224/08225 ,  H01L2224/74 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75725 ,  H01L2224/75734 ,  H01L2224/75735 ,  H01L2224/75841 ,  H01L2224/7598 ,  H01L2224/80004 ,  H01L2224/80006 ,  H01L2224/80007 ,  H01L2224/80011 ,  H01L2224/80012 ,  H01L2224/80019 ,  H01L2224/80121 ,  H01L2224/802 ,  H01L2224/80203 ,  H01L2224/80385 ,  H01L2224/80424 ,  H01L2224/80444 ,  H01L2224/80447 ,  H01L2224/80893 ,  H01L2224/80894 ,  H01L2224/80948 ,  H01L2224/80986 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00015 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/01014 ,  H01L2224/05155 ,  H01L2224/0516 ,  H01L2924/05442 ,  H01L21/78

Abstract: This process comprises: placing (70) chips in preset locations by attracting a transfer layer of the chip using a pad, the attractive force between the transfer layer and the pad being a force chosen from the group composed of a magnetic force, an electrostatic force and an electromagnetic force; and bonding (74) the chips thus placed on respective receiving zones of an active side of a receiver substrate, this bonding comprising: preparing (30, 62, 72) bonding sides of the chips and the receiving zones so that they are able to bond without adhesive, then in step c), bringing (78) each bonding side into direct contact with its respective receiving zone and thus bonding the chips to the receiver substrate without adhesive.

Abstract translation: 该方法包括：通过使用焊盘吸引芯片的转移层来将（70）芯片放置在预设位置，转移层和焊盘之间的吸引力是从由磁力，静电力 和电磁力; 并且将由此放置在接收器基板的有源侧的相应接收区上的芯片接合（74），该接合包括：准备（30,62,72）将芯片和接收区域粘合在一起，使得它们能够结合 没有粘合剂，然后在步骤c）中，使（78）每个粘合侧与其相应的接收区域直接接触，并且因此将芯片粘合到接收器基底而没有粘合剂。

公开(公告)号：WO2003075340A2

公开(公告)日：2003-09-12

申请号：PCT/BE2003/000038

申请日：2003-03-03

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ,  BANDA, Pedro ,  HO, Meng ,  WHELAN, Caroline

Inventor： BANDA, Pedro ,  HO, Meng ,  WHELAN, Caroline

IPC: H01L21/60

CPC classification number: H01L24/85 ,  B82Y30/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05678 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/4516 ,  H01L2224/45164 ,  H01L2224/45178 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48678 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48864 ,  H01L2224/48878 ,  H01L2224/85011 ,  H01L2224/85013 ,  H01L2224/85205 ,  H01L2224/85355 ,  H01L2224/85375 ,  H01L2224/85395 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H05K3/282 ,  H05K3/328 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/4876 ,  H01L2224/48778 ,  H01L2924/00015

Abstract: A method for obtaining metal-to-metal contact between a bonding surface of a metallic bonding area and a second metal surface is disclosed. The method comprises the steps of : - coating said bonding surface of said metallic bonding area with a chemical composition that forms a self-assembled monolayer on said bonding surface of said metallic bonding area, and - bonding said second metal surface on said coated bonding surface through said self­assembled monolayer. The combination of the coating step and the bonding step result in a metal to metal contact between the bonding surface of he metallic bonding area and the second metal surface. The metallic bonding area can be a semiconductor bond pad, e.g. of a semiconductor device.

Abstract translation: 公开了一种用于在金属接合区域的接合表面和第二金属表面之间获得金属对金属接触的方法。 该方法包括以下步骤： - 在所述金属接合区的所述接合表面上，用形成自组装单层的化学组合物涂覆所述金属接合区的所述接合表面，以及 - 将所述第二金属表面粘结在所述涂覆的接合表面上 通过所述自组装的单层。 涂覆步骤和粘合步骤的组合导致金属接合区域的接合表面和第二金属表面之间的金属与金属的接触。 金属接合区域可以是半导体接合焊盘，例如， 的半导体器件。

公开(公告)号：WO2003049178A2

公开(公告)日：2003-06-12

申请号：PCT/US2002/036459

申请日：2002-11-13

Applicant: MOTOROLA, INC.

Inventor： MERCADO, Lei, L. ,  SARIHAN, Vijay ,  CHUNG, Young, Sir ,  WANG, James, Jen-Ho ,  PRACK, Edward, R.

IPC: H01L21/60

CPC classification number: H01L24/12 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/11 ,  H01L24/48 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05599 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05644 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05679 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/1411 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2224/45099 ,  H01L2924/00

Abstract: In accordance with one embodiment, a stress buffer (40) is formed between a power metal structure (90) and passivation layer (30). The stress buffer (40) reduces the effects of stress imparted upon the passivation layer (30) by the power metal structure (90). In accordance with an alternative embodiment, a power metal structure (130A) is partitioned into segments (1091), whereby electrical continuity is maintained between the segments (1090) by remaining portions of a seed layer (1052) and adhesion/barrier layer (1050). The individual segments (1090) impart a lower peak stress than a comparably sized continuous power metal structure (9).

Abstract translation: 根据一个实施例，应力缓冲器40形成在功率金属结构90和钝化层30之间。应力缓冲器40减少由功率金属结构90施加在钝化层30上的应力的影响。根据替代方案 功率金属结构130A被分割成段1091，从而通过种子层1052和粘附/阻挡层1050的剩余部分在段1090之间保持电连续性。单个区段1090赋予比相对大小的较低峰值应力 连续动力金属结构9。

公开(公告)号：WO0186715A3

公开(公告)日：2002-09-06

申请号：PCT/DE0101651

申请日：2001-05-03

Applicant: INFINEON TECHNOLOGIES AG ,  HOUDEAU DETLEF ,  HUEBNER HOLGER ,  KRIPESH VAIDYANATHAN

Inventor： HOUDEAU DETLEF ,  HUEBNER HOLGER ,  KRIPESH VAIDYANATHAN

IPC: H01L21/00 ,  H01L21/60

CPC classification number: H01L24/83 ,  H01L21/67138 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05573 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29666 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/83011 ,  H01L2224/8319 ,  H01L2224/832 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/00

Abstract: According to the invention, the first metal layer (107) is soldered to the second metal layer (102) using a soldering material (104), whereby only a portion of the first metal layer (107) is transformed into one or more intermetallic phases (122) with the soldering material that is used.

Abstract translation: 第一金属层（107）被焊接到使用焊料材料（104）的第二金属层（102），其中，仅所述第一金属层（107）的一部分被转化成一种或多种金属间相（122）所使用的焊接材料。

公开(公告)号：WO01086715A2

公开(公告)日：2001-11-15

申请号：PCT/DE2001/001651

申请日：2001-05-03

IPC: H01L21/00 ,  H01L21/60

CPC classification number: H01L24/83 ,  H01L21/67138 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05573 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29666 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/83011 ,  H01L2224/8319 ,  H01L2224/832 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/00

Abstract: According to the invention, the first metal layer (107) is soldered to the second metal layer (102) using a soldering material (104), whereby only a portion of the first metal layer (107) is transformed into one or more intermetallic phases (122) with the soldering material that is used.

Abstract translation: 第一金属层（107）被焊接到使用焊料材料（104）的第二金属层（102），其中，仅所述第一金属层（107）的一部分被转化成一种或多种金属间相（122）所使用的焊接材料。

公开(公告)号：WO2010106144A3

公开(公告)日：2010-11-18

申请号：PCT/EP2010053553

申请日：2010-03-18

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

Inventor： SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

IPC: H01L21/60

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

Abstract: The invention relates to a metallization (40) (and a semiconductor wafer (10) having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), the barrier layer (30) and the metallization (40) being applied by means of physical separation and the metallization (40) being designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.

Abstract translation: 本发明的目的，金属化（40）（或者与相应的金属化的半导体晶片（10））通过物理气相沉积（干分离）的装置和用于它们的生产提供一种方法，一方面可以制备和在另一方面的焊料的足够高的粘附性 确保-Bumps。 用于至少一个接触焊盘（20）一种制造金属化（40）的本发明方法具有以下方法步骤：在衬底（10）上施加至少一个接触焊盘（20），沉积阻挡层（30）（在所述至少一个接触垫的顶 20），以及将金属化（40）（在该阻挡层（30的顶部），其中所述阻挡层（30）和金属化（40）通过物理分离和金属化（40）为两个层结构，多个交替的金属化来施加 41，42形成），镍的第一金属化层（41），或具有小于500纳米的层厚度，并从一个角度的第二金属化层（42）由镍不同Ni合金，延展性的导电材料，优选金形成， 是。

公开(公告)号：WO2002099845A2

公开(公告)日：2002-12-12

申请号：PCT/DE2002/002026

申请日：2002-06-03

Applicant: INFINEON TECHNOLOGIES AG ,  HÖNLEIN, Wolfgang ,  KLOSE, Helmut ,  KREUPL, Franz ,  SIMBÜRGER, Werner

Inventor： HÖNLEIN, Wolfgang ,  KLOSE, Helmut ,  KREUPL, Franz ,  SIMBÜRGER, Werner

IPC: H01L

CPC classification number: H01L25/0657 ,  B82Y10/00 ,  B82Y30/00 ,  G01R31/2884 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13078 ,  H01L2224/13099 ,  H01L2224/13193 ,  H01L2224/16145 ,  H01L2224/81065 ,  H01L2224/81097 ,  H01L2224/81191 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01072 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2224/05552

Abstract: Auf mindestens einem externen Chip-Metallkontakt des elektronischen Chips ist eine Vielzahl von Nanoröhren aufgebracht zum Kontaktieren des elektronischen Chips mit einem weiteren elektronischen Chip.

Abstract translation: 在电子芯片中的至少一个外部片金属接触多个纳米管被应用于电子芯片与另外的电子芯片接触。

公开(公告)号：WO1997044676A1

公开(公告)日：1997-11-27

申请号：PCT/US1997008271

申请日：1997-05-15

Applicant: FORMFACTOR, INC.

Inventor： FORMFACTOR, INC. ,  KHANDROS, Igor, Y. ,  ELDRIDGE, Benjamin, N. ,  MATHIEU, Gaetan, L. ,  GRUBE, Gary, W.

IPC: G01R01/067

CPC classification number: G01R1/07342 ,  G01R1/06727 ,  G01R1/06744 ,  G01R3/00 ,  H01H1/0036 ,  H01L23/49811 ,  H01L24/06 ,  H01L24/10 ,  H01L24/45 ,  H01L24/72 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/06136 ,  H01L2224/45144 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K3/20 ,  H05K3/3421 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/48657 ,  H01L2224/4866 ,  H01L2224/85399

Abstract: Spring contact elements are fabricated by depositing at least one layer of metallic material into openings defined on a sacrificial substrate. The openings may be within the surface of the substrate, or in one or more layers deposited on the surface of the sacrificial substrate. Each spring contact element has a base end portion, a contact end portion, and a central body portion. The contact end portion is offset in the z-axis (at a different height) than the central body portion. The base end portion is preferably offset in an opposite direction along the z-axis from the central body portion. In this manner, a plurality of spring contact elements are fabricated in a prescribed spatial relationship with one another on the sacrificial substrate. The spring contact elements are suitably mounted by their base end portions to corresponding terminals on an electronic component, such as a space transformer or a semiconductor device, whereupon the sacrificial substrate is removed so that the contact ends of the spring contact elements extend above the surface of the electronic component. In an exemplary use, the spring contact elements are thereby disposed on a space transformer component of a probe card assembly so that their contact ends effect pressure connections to corresponding terminals on another electronic component, for the purpose of probing the electronic component.

Abstract translation: 通过将至少一层金属材料沉积到限定在牺牲衬底上的开口中来制造弹簧接触元件。 开口可以在衬底的表面内，或者在沉积在牺牲衬底的表面上的一个或多个层中。 每个弹簧接触元件具有基端部分，接触端部分和中心体部分。 接触端部在与中心体部分相同的z轴（不同高度）偏移。 基端部优选沿着与中心主体部分的z轴相反的方向偏移。 以这种方式，在牺牲基板上以规定的空间关系制造多个弹簧接触元件。 弹簧接触元件通过它们的基端部适当地安装在诸如空间变压器或半导体器件的电子部件上的对应端子上，从而去除牺牲基板，使得弹簧接触元件的接触端部在表面上方延伸 的电子元件。 在示例性用途中，弹簧接触元件因此被布置在探针卡组件的空间变换器部件上，使得它们的接触端在另一电子部件上实现与相应端子的压力连接，以便探测电子部件。

公开(公告)号：WO2016137452A1

公开(公告)日：2016-09-01

申请号：PCT/US2015/017435

申请日：2015-02-25

Applicant: INTEL CORPORATION

Inventor： PIETAMBARAM, Srinivas V. ,  LEE, Kyu Oh

IPC: H01L23/48 ,  H01L25/065

CPC classification number: H01L24/05 ,  B23K35/262 ,  C22C13/00 ,  C22C19/03 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05564 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/0568 ,  H01L2224/05683 ,  H01L2224/05684 ,  H01L2224/13026 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/81444 ,  H01L2924/01015 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2924/01047

Abstract: A surface finish may be formed in a microelectronic structure, wherein the surface finish may include a multilayer interlayer structure. Thus, needed characteristics, such as compliance and electro-migration resistance, of the interlayer structure may be satisfied by different material layers, rather attempting to achieve these characteristics with a single layer. In one embodiment, the multilayer interlayer structure may comprises a two-layer structure, wherein a first layer is formed proximate a solder interconnect and comprises a material which forms a ductile joint with the solder interconnect, and a second layer comprising a material having strong electro-migration resistance formed between the first layer and an interconnection pad. In a further embodiment, third layer may be formed adjacent the interconnection pad comprising a material which forms a ductile joint with the interconnection pad.

Abstract translation: 表面光洁度可以形成在微电子结构中，其中表面光洁度可以包括多层夹层结构。 因此，可以通过不同的材料层来满足层间结构的所需特性，例如顺应性和耐电迁移性，而是试图用单层实现这些特性。 在一个实施例中，多层夹层结构可以包括双层结构，其中第一层在焊料互连附近形成，并且包括与焊料互连形成韧性接头的材料，以及包括具有强电化学材料的第二层 - 在第一层和互连衬垫之间形成的迁移电阻。 在另一实施例中，第三层可以形成在互连焊盘附近，该互连焊盘包括与互连焊盘形成延性接头的材料。

公开(公告)号：WO2010106144A2

公开(公告)日：2010-09-23

申请号：PCT/EP2010/053553

申请日：2010-03-18

Applicant: FORSCHUNGSVERBUND BERLIN E.V. ,  SIDOROV, Victor ,  ZHYTNYTSKA, Rimma ,  WUERFL, Joachim

Inventor： SIDOROV, Victor ,  ZHYTNYTSKA, Rimma ,  WUERFL, Joachim

IPC: H01L21/60

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung einer Metallisierung für mindestens ein Kontaktpad und einen Halbieiterwafer mit Metallisierung für mindestens ein Kontaktpad. Es ist Aufgabe der voriiegenden Erfindung, eine Metallisierung (bzw. einen Halbleiterwafer mit entsprechender Metallisierung) und ein Verfahren zu deren Herstellung anzugeben, die einerseits mittels physikalischer Gasphasenabscheidung (Trockenabscheidung) herstellbar sind und andererseits eine ausreichend hohe Adhäsion eines Lot-Bumps gewährleisten. Das erfindungsgemäße Verfahren zur Herstellung einer Metallisierung (40) für mindestens ein Kontaktpad (20) weist folgende Verfahrensschritte auf: Aufbringen mindestens eines Kontaktpads (20) auf ein Substrat (10), Aufbringen einer Barriereschicht (30) auf die Oberseite des mindestens einen Kontaktpads (20), und Aufbringen einer Metallisierung (40) auf die Oberseite der Barriereschicht (30), dadurch gekennzeichnet, dass die Barriereschicht (30) und die Metallisierung (40) mittels physikalischer Abscheidung aufgebracht werden und dass die Metallisierung (40) als Schichtstruktur zweier, mehrfach alternierender Metallisierungsschichten (41, 42) ausgebildet wird, wobei die erste Metallisierungsschicht (41) aus Nickel oder eine Ni-Legierung mit einer Schichtdicke kleiner als 500 nm und die zweite Metallisierungsschicht (42) aus einem von Nickel verschiedenen, elektrisch leitfähigen Material ausgebildet wird.

Abstract translation: 本发明涉及一种用于制造金属化用于至少一个接触垫和一个与Halbieiterwafer金属化至少一个接触垫的方法。 它是可以制备的voriiegenden本发明的目的，金属化（或具有适当金属化的半导体晶片）通过物理气相沉积（干分离）的装置和用于它们的生产提供一种方法，在一方面和另一方面确保焊锡凸块的足够高的粘合性。 用于至少一个接触焊盘（20）一种制造金属化（40）的本发明方法具有以下方法步骤：在衬底（10）上施加至少一个接触焊盘（20），沉积阻挡层（30）（在所述至少一个接触垫的顶 20），和在该阻挡层（30）的顶部施加的金属化（40），其特征在于，所述阻挡层（30）和金属化（40）通过物理沉积的装置和在所施加的金属化两个作为层结构（40）， 多个交替的金属层（41,42）形成，其中所述镍的第一金属化层（41）或具有小于500nm的层的厚度和第二金属化层（42）Ni合金是从镍不同的角度，导电材料形成 ，