公开(公告)号：WO2016012754A2

公开(公告)日：2016-01-28

申请号：PCT/GB2015/052036

申请日：2015-07-15

申请人： ALPHA METALS, INC. ,  SETNA, Rohan P

发明人： CHOUDHURY, Pritha ,  DE AVILA RIBAS, Morgana ,  MUKHERJEE, Sutapa ,  SARKAR, Siuli ,  PANDHER, Ranjit ,  BHATKAL, Ravindra ,  SINGH, Bawa

IPC分类号： C22C13/00

CPC分类号： B23K35/262 ,  B23K1/0016 ,  B23K1/002 ,  B23K1/0056 ,  B23K1/085 ,  B23K35/00 ,  B23K35/0222 ,  B23K35/0227 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K2201/40 ,  B23K2201/42 ,  C22C13/00 ,  C22C13/02 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29117 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/2918 ,  H01L2224/83815 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01058

摘要： A lead-free, antimony-free solder alloy comprising: (a) from 1 to 4 wt.% silver (b) from 0.5 to 6 wt.% bismuth (c) from 3.55 to 15 wt.% indium (d) 3 wt.% or less of copper (e) optionally one or more of the following elements 0 to 1 wt.% nickel 0 to 1 wt.% of titanium 0 to 1 wt.% manganese 0 to 1 wt.% of rare earths, such as cerium 0 to 1 wt.% of chromium 0 to 1 wt.% germanium 0 to 1 wt.% of gallium 0 to 1 wt.% of cobalt 0 to 1 wt.% of iron 0 to 1 wt.% of aluminum 0 to 1 wt.% of phosphorus 0 to 1 wt.% of gold 0 to 1 wt.% of tellurium 0 to 1 wt.% of selenium 0 to 1 wt.% of calcium 0 to 1 wt.% of vanadium 0 to 1 wt.% of molybdenum 0 to 1 wt.% of platinum 0 to 1 wt.% of magnesium (f) the balance tin, together with any unavoidable impurities.

摘要翻译： 一种无铅，无锑焊料合金，其包含：（a）1至4重量％的银（b）0.5至6重量％的铋（c）3.55至15重量％的铟（d）3重量％ 。％或更少的铜（e）任选一种或多种以下元素0至1重量％的镍0至1重量％的钛0至1重量％的锰0至1重量％的稀土，例如 作为铈0至1重量％的铬0至1重量％的锗0至1重量％的镓0至1重量％的钴0至1重量％的铁0至1重量％的铝0 至1重量％的磷0至1重量％的金0至1重量％的碲0至1重量％的硒0至1重量％的钙0至1重量％的钒0至1 钼的重量百分比为0至1重量％的铂0至1重量％的镁（f）余量为锡，以及任何不可避免的杂质。

公开(公告)号：WO2013117438A3

公开(公告)日：2013-10-03

申请号：PCT/EP2013051400

申请日：2013-01-25

申请人： BOSCH GMBH ROBERT

发明人： FRUEH CHRISTIANE ,  FIX ANDREAS

IPC分类号： H01L21/60

CPC分类号： H01L24/32 ,  B23K1/0008 ,  B23K1/19 ,  B23K35/025 ,  B23K35/3006 ,  B23K2203/08 ,  B23K2203/56 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/83 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29016 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/30515 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/83951 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/3512 ,  H01L2924/00

摘要： The connection arrangement (100, 200, 300, 400) comprises at least one electric and/or electronic component (1). The at least one electric and/or electronic component (10) has at least one connection face (11), which is connected in a bonded manner to a join partner (40) by means of a connection layer (20). The connection layer (20) can for example be an adhesive, soldered, welded, sintered connection or another known connection that connects joining partners while forming a material connection. Furthermore, a reinforcement layer (30') is arranged adjacent to the connection layer (20) in a bonded manner. The reinforcement layer (30') has a higher modulus of elasticity than the connection layer (20). A particularly good protective effect is achieved if the reinforcement layer (30') is formed in a frame-like manner by an outer and an inner boundary (36, 35) and, at least with the outer boundary (36) thereof, encloses the connection face (11) of the at least one electric and/or electronic component (10).

摘要翻译： 连接装置（100,200,300,400）包括至少一个电气和/或电子部件（1）。 该至少一个电气和/或电子元件（10）具有由接合层（20）（40）锁合的装置连接到对接件的至少一个连接表面（11）。 连接层（20）可以是例如粘合剂，焊料，焊接，烧结连接或其他已知的连接，其连接接合对方以形成材料结合。 此外，增强层（30'）与连接层（20）相邻地设置。 增强层（30'）具有比接合层（20）更高的弹性模量。 特别大的保护效果由下式给出，如果加强层（30“）形成为类似一帧由外和内边界（36，35）和至少与所述连接表面（11）的外边界（36）的至少一个电气和/ 或电子部件（10）包围。

公开(公告)号：WO2007133528A2

公开(公告)日：2007-11-22

申请号：PCT/US2007011080

申请日：2007-05-08

申请人： INDIUM CORP AMERICA

发明人： HWANG HONG-SIK ,  LEE NING-CHENG

IPC分类号： F26B25/06 ,  F26B5/06

CPC分类号： C22C28/00 ,  B23K35/24 ,  H01L23/3733 ,  H01L23/3736 ,  H01L23/42 ,  H01L23/4275 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/16221 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29313 ,  H01L2224/32012 ,  H01L2224/32014 ,  H01L2224/81192 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/3651 ,  H01L2924/01048 ,  H01L2924/0108 ,  H01L2924/01083 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2224/29311 ,  H01L2924/00012 ,  H01L2224/05599

摘要： Alloy compositions and techniques for reducing IMC thickness and oxidation of metals and alloys are disclosed. In one particular exemplary embodiment, the alloy compositions may be realized as a composition of alloy or mixture consisting essentially of from about 90% to about 99.999% by weight indium and from about 0.001% to about 10% by weight germanium and unavoidable impurities. In another particular exemplary embodiment, the alloy compositions may be realized as a composition of alloy consisting essentially of from about 90% to about 99.999% by weight gallium and from about 0.001% to about 10% by weight germanium and unavoidable impurities.

摘要翻译： 公开了用于降低金属和合金的IMC厚度和氧化的合金组成和技术。 在一个具体的示例性实施方案中，合金组合物可以实现为基本上由约90重量％至约99.999重量％的铟和约0.001重量％至约10重量％的锗和不可避免的杂质组成的合金或混合物。 在另一个具体的示例性实施方案中，合金组合物可以实现为基本上由约90重量％至约99.999重量％的镓和约0.001重量％至约10重量％的锗和不可避免的杂质组成的合金。

公开(公告)号：WO2014088966A3

公开(公告)日：2015-01-15

申请号：PCT/US2013072675

申请日：2013-12-02

申请人： INVENSAS CORP

发明人： UZOH CYPRIAN EMEKA

IPC分类号： H01L23/485 ,  H01L21/50 ,  H01L21/60 ,  H01L23/10 ,  H01L23/498 ,  H05K3/34

CPC分类号： H05K13/046 ,  H01L21/4853 ,  H01L21/50 ,  H01L21/76898 ,  H01L23/10 ,  H01L23/481 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L2224/02372 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1319 ,  H01L2224/14131 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29138 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81075 ,  H01L2224/8112 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/83075 ,  H01L2224/8312 ,  H01L2224/83193 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/381 ,  H01L2924/04953 ,  H01L2924/01071 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01031 ,  H01L2924/01034 ,  H01L2924/00012 ,  H01L2924/07025 ,  H01L2224/05552

摘要： A microelectronic assembly (10, 110, 210, 310, 410) includes a first substrate (12, 112, 212, 312, 412, 512, 612, 712, 812, 912) having a first conductive element (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022) and a second substrate (14, 114, 214, 314, 414) having a second conductive element (26, 126, 226, 326, 426). The assembly further includes an electrically conductive alloy mass (16, 116) joined to the first and second conductive elements (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022), including a first, a second and a third material. First and second materials of the alloy mass (16, 116) each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022) to a relatively lower amount toward the second conductive element (26, 126, 226, 326, 426), and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element (26, 126, 226, 326, 426) to a relatively lower amount toward the first conductive element (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022). The microelectronic assembly (10, 110, 210, 310, 410) is formed by aligning the first substrate (12, 112, 212, 312, 412, 512, 612, 712, 812, 912), having a first bond component (30, 230, 330, 430), with the second substrate (14, 114, 214, 314, 414), having a second bond component (40, 240, 340, 440), such that the first (30, 230, 330, 430, 1030) and second (40, 240, 340, 440) bond components are in contact with each other, the first bond component (30, 230, 330, 430, 1030) including a first material layer (36, 536, 636, 736, 836, 936) adjacent the first conductive element (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022) and a first protective layer (38, 538, 638, 738, 838, 938) overlying the first material layer (36, 536, 636, 736, 836, 936), the second bond component (40, 240, 340, 440) including a second material layer (46) adjacent the second conductive element (26) and a second protective layer (48) overlying the second material layer (46), and heating the first (30, 230, 330, 430, 1030) and second (40, 240, 340, 440) bond components such that at least portions of the first (36, 536, 636, 736, 836, 936) and second (46) material layers diffuse together to form the alloy mass (16, 116) joining the first (12, 112, 212, 312, 412, 512, 612, 712, 812, 912) and second (14, 114, 214, 314, 414) substrates with one another. There may be formed a plurality of first conductive elements (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022) on the first substrate (12, 112, 212, 312, 412, 512, 612, 712, 812, 912) and a plurality of second conductive elements (26, 126, 226, 326, 426) on the second substrate (14, 114, 214, 314, 414), joined by a plurality of conductive alloy masses (16, 116). The conductive alloy mass (116) may also surround and hermetically seal an internal volume.

摘要翻译： 微电子组件（10,110,210,310,410）包括具有第一导电元件（26,126,226）的第一衬底（12,112,212,312,412,512,612,712,812,912） 具有第二导电元件（26,126,226,326,426）的第二基板（14,114,214,314,414），以及具有第二导电元件（26,126,226,326,426）的第二基板（14,114,214,314,414）。 组件还包括接合到第一和第二导电元件（26,126,226,326,426,526,626,726,826,926,1022）的导电合金块（16,116），包括第一， 第二和第三材料。 合金质量（16,116）的第一和第二材料的熔点低于合金的熔点。 第一材料的浓度在朝向第一导电元件（26,126,226,326,426,526,626,726,826,926,1022）设置的位置处的相对较高的量的浓度变化到相对较低的量 朝向第二导电元件（26,126,226,326,426）的量，并且第二材料的浓度在朝向第二导电元件（26,126,226,326,426）设置的位置处的相对较高的量的浓度变化 ，426）朝向第一导电元件（26,126,226,326,426,526,626,726,826,926,1012）相对较低的量。 微电子组件（10,110,210,310,410）通过使具有第一粘合组分（30,110,210,310,410）的第一粘合组分（30,110,210,310,410） 具有第二接合部件（40,42,340,440）的第二基板（14,114,214,314,414），使得所述第一基板（30,230,340,440） 所述第一接合部件（30,230,330,430,1030）包括第一材料层（36,536,630）和第二接合部件（40,42,340,440），所述第一接合部件 邻近第一导电元件（26,126,226,326,426,526,626,726,826,926,1022）的第一保护层（38,538,638,738,838），第三保护层 ，覆盖在第一材料层（36,536,636,736,836,936）上的第二结合部件（40,240,340,440）包括邻近第二导电元件（26）的第二材料层（46） ）和覆盖在第二材料层（46）上的第二保护层（48），并且加热第一（30,230,33 0,430,1030）和第二（40,42,340,440）粘合部件，使得第一（36,536,636,736,836,936）和第二（46）材料层的至少一部分一起扩散到 形成将第一（12,112,212,312,412,912）和第二（14,114,214,314,414）基板彼此接合的合金块（16,116） 。 可以在第一衬底（12,112,212,312,412,512,512）上形成多个第一导电元件（26,126,226,326,426,526,626,726,826,926,1022） 612,1112,812,912）以及由第二基片（14,114,214,314,414）上的多个第二导电元件（26,126,226,326,426）组成的多个导电合金块 （16,116）。 导电合金质量块（116）也可以围绕并气密地密封内部体积。

公开(公告)号：WO2014022619A3

公开(公告)日：2014-04-24

申请号：PCT/US2013053135

申请日：2013-08-01

申请人： OSRAM SYLVANIA INC

发明人： SERRE JEFFERY ,  LENEF ALAN ,  SCOTCH ADAM

IPC分类号： H01L21/60 ,  H01L21/98 ,  H01L23/488 ,  H01L33/62

CPC分类号： H05K3/3431 ,  B23K1/0016 ,  B23K1/20 ,  B23K3/0684 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  H01L33/62 ,  H01L2224/29082 ,  H01L2224/29105 ,  H01L2224/29113 ,  H01L2224/325 ,  H01L2224/83143 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83815 ,  H01L2224/83907 ,  H01L2224/95085 ,  H01L2224/95101 ,  H01L2224/95146 ,  H01L2224/97 ,  H01L2924/01322 ,  H05K1/111 ,  H05K3/3468 ,  H05K13/0465 ,  H05K2201/10992 ,  H05K2203/044 ,  H05K2203/047 ,  H05K2203/048 ,  H01L2924/00012 ,  H01L2924/0105

摘要： A dual solder layer for fluidic self assembly, an electrical component substrate, and method employing same is described. The dual solder layer comprises a layer of a self-assembly solder (12) disposed on a layer of a base solder (14) which is disposed on the solder pad (16) of an electrical component substrate(18). The self-assembly solder (12) has a liquidus temperature less than a first temperature and the base solder (14) has a solidus temperature greater than the first temperature. The self-assembly solder (12) liquefies at the first temperature during a fluidic self assembly method to cause electrical components (10) to adhere to the substrate (18). After attachment, the substrate(18) is removed from the bath (20) and heated so that the base solder (14) and self-assembly solder (12) combine to form a composite alloy (22) which forms the final electrical solder connection between the component (10) and the solder pad (16) on the substrate (18).

摘要翻译： 描述了用于流体自组装的双焊料层，电组件衬底和使用其的方法。 双焊料层包括设置在基底焊料（14）的层上的自组装焊料层（12），该层设置在电气部件基板（18）的焊盘（16）上。 自组装焊料（12）具有低于第一温度的液相线温度，并且基底焊料（14）的固相线温度大于第一温度。 自组装焊料（12）在流体自组装方法期间在第一温度下液化，以使电组件（10）粘附到衬底（18）上。 在附着之后，将衬底（18）从浴（20）中移出并加热，使得基底焊料（14）和自组装焊料（12）组合形成复合合金（22），其形成最终的电焊接 在组件（10）和衬底（18）上的焊盘（16）之间。

公开(公告)号：WO2011084362A2

公开(公告)日：2011-07-14

申请号：PCT/US2010/059981

申请日：2010-12-11

申请人： ADVANCED MICRO DEVICES, INC. ,  SU, Michael, Z.

发明人： SU, Michael, Z.

IPC分类号： H01L25/065

CPC分类号： H01L25/0657 ,  H01L21/54 ,  H01L23/055 ,  H01L23/3185 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/433 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/2747 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/321 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00 ,  H01L2924/00012

摘要： Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip (20) that has a substrate and a first active circuitry portion (40) extending a first distance into the substrate. A barrier (135) is formed in the first semiconductor chip (20) that surrounds but is laterally separated from the first active circuitry portion (40) and extends into the substrate a second distance greater than the first distance.

摘要翻译： 公开了用于建立半导体器件的热通路的各种方法和装置。 在一个方面，提供一种制造方法，其包括提供具有基板的第一半导体芯片（20）和向基板延伸第一距离的第一有源电路部分（40）。 在第一半导体芯片（20）中形成屏障（135），该第一半导体芯片（20）围绕第一半导体芯片（20），但是与第一有源电路部分（40）横向分离，并延伸到基板中比第一距离大的第二距离。

公开(公告)号：WO2016012754A3

公开(公告)日：2016-05-06

申请号：PCT/GB2015052036

申请日：2015-07-15

申请人： ALPHA METALS ,  SETNA ROHAN P

发明人： CHOUDHURY PRITHA ,  DE AVILA RIBAS MORGANA ,  MUKHERJEE SUTAPA ,  SARKAR SIULI ,  PANDHER RANJIT ,  BHATKAL RAVINDRA ,  SINGH BAWA

IPC分类号： C22C13/00 ,  B23K1/00 ,  B23K1/002 ,  B23K1/005 ,  B23K1/08 ,  B23K35/00 ,  B23K35/02 ,  B23K35/26 ,  C22C13/02

CPC分类号： B23K35/262 ,  B23K1/0016 ,  B23K1/002 ,  B23K1/0056 ,  B23K1/085 ,  B23K35/00 ,  B23K35/0222 ,  B23K35/0227 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K2201/40 ,  B23K2201/42 ,  C22C13/00 ,  C22C13/02 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29117 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/2918 ,  H01L2224/83815 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01058

摘要： A lead-free, antimony-free solder alloy comprising: (a) from 1 to 4 wt.% silver (b) from 0.5 to 6 wt.% bismuth (c) from 3.55 to 15 wt.% indium (d) 3 wt.% or less of copper (e) optionally one or more of the following elements 0 to 1 wt.% nickel 0 to 1 wt.% of titanium 0 to 1 wt.% manganese 0 to 1 wt.% of rare earths, such as cerium 0 to 1 wt.% of chromium 0 to 1 wt.% germanium 0 to 1 wt.% of gallium 0 to 1 wt.% of cobalt 0 to 1 wt.% of iron 0 to 1 wt.% of aluminum 0 to 1 wt.% of phosphorus 0 to 1 wt.% of gold 0 to 1 wt.% of tellurium 0 to 1 wt.% of selenium 0 to 1 wt.% of calcium 0 to 1 wt.% of vanadium 0 to 1 wt.% of molybdenum 0 to 1 wt.% of platinum 0 to 1 wt.% of magnesium (f) the balance tin, together with any unavoidable impurities.

摘要翻译： 一种无铅，无锑焊料合金，其包含：（a）1至4重量％的银（b）0.5至6重量％的铋（c）3.55至15重量％的铟（d）3重量％ 。％或更少的铜（e）任选一种或多种以下元素0至1重量％的镍0至1重量％的钛0至1重量％的锰0至1重量％的稀土，例如 作为铈0至1重量％的铬0至1重量％的锗0至1重量％的镓0至1重量％的钴0至1重量％的铁0至1重量％的铝0 至1重量％的磷0至1重量％的金0至1重量％的碲0至1重量％的硒0至1重量％的钙0至1重量％的钒0至1 钼的重量百分比为0至1重量％的铂0至1重量％的镁（f）余量为锡，以及任何不可避免的杂质。

公开(公告)号：WO2013119671A1

公开(公告)日：2013-08-15

申请号：PCT/US2013/024939

申请日：2013-02-06

申请人： LUXVUE TECHNOLOGY CORPORATION

发明人： BIBL, Andreas ,  HIGGINSON, John A. ,  HU, Hsin-Hua ,  LAW, Hung-Fai Stephen

IPC分类号： H01L21/677 ,  H01L21/60 ,  H01L21/762

CPC分类号： H01L24/83 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/95 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29183 ,  H01L2224/75261 ,  H01L2224/75281 ,  H01L2224/75282 ,  H01L2224/75283 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2224/95001 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01031 ,  H01L2924/01051 ,  H01L2924/01029 ,  H01L2924/01048 ,  H01L2924/01082 ,  H01L2924/0103

摘要： Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

摘要翻译： 描述了静电转印头阵列组件以及将微器件阵列转移和结合到接收衬底的方法。 在一个实施例中，一种方法包括从载体基板拾取微器件阵列，其中静电转印头组件支持静电转印头阵列，使接收基片与微器件阵列接触，将静电转印头 组件将微器件阵列接合到接收衬底，并将微器件阵列释放到接收衬底上。

公开(公告)号：WO2011084362A3

公开(公告)日：2011-09-01

申请号：PCT/US2010059981

申请日：2010-12-11

申请人： ADVANCED MICRO DEVICES INC ,  SU MICHAEL Z

发明人： SU MICHAEL Z

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/42

CPC分类号： H01L25/0657 ,  H01L21/54 ,  H01L23/055 ,  H01L23/3185 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/433 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/2747 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/321 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00 ,  H01L2924/00012

摘要： Various methods and apparatus for establishing thermal pathways for a semiconductor device using solder-type thermal material (90) are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip (20) that has a substrate and a first active circuitry portion (40) extending a first distance into the substrate. A barrier (135),which inhibits the diffusion of solder, is formed in the first semiconductor chip (20) that surrounds but is laterally separated from the first active circuitry portion (40) and extends into the substrate a second distance greater than the first distance.

摘要翻译： 公开了用于使用焊料型热材料（90）为半导体器件建立热路径的各种方法和装置。 在一个方面，提供一种制造方法，其包括提供具有基板的第一半导体芯片（20）和向基板延伸第一距离的第一有源电路部分（40）。 在第一半导体芯片（20）中形成阻止焊料扩散的阻挡层（135），该第一半导体芯片（20）围绕第一半导体芯片（20），但是与第一有源电路部分（40）横向分离，并延伸到基板的第二距离， 距离。

公开(公告)号：WO2005096320A3

公开(公告)日：2006-04-06

申请号：PCT/US2005010600

申请日：2005-03-29

申请人： GEN ELECTRIC ,  ZHONG HONG ,  GOWDA ARUN VIRUPAKSHA ,  ESLER DAVID RICHARD ,  PAISNER SARA NAOMI

发明人： ZHONG HONG ,  GOWDA ARUN VIRUPAKSHA ,  ESLER DAVID RICHARD ,  PAISNER SARA NAOMI

IPC分类号： C08K3/08 ,  H01B3/00 ,  H01L23/373 ,  H01L23/42

CPC分类号： H01L23/3737 ,  B82Y30/00 ,  H01L23/42 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/29486 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12044 ,  H01L2924/157 ,  H01L2924/3011 ,  H01L2924/01031 ,  H01L2224/29105 ,  H01L2924/05432 ,  H01L2924/00014 ,  H01L2924/05032 ,  H01L2924/0503 ,  H01L2924/0532 ,  H01L2924/0542 ,  H01L2924/05342 ,  H01L2924/05341 ,  H01L2924/0536 ,  H01L2924/05442 ,  H01L2924/00

摘要： A composition comprising at least one liquid metal having a melting point less than 35°C; at least one electrically insulating solid filler comprising thermally conducting materials; at least one resin is provided. The composition is both thermally conducting and electrically insulating and has utility in the preparation of electronic devices comprising heat generating and heat dissipating structures. In one instance a composition is provided which comprises a liquid metal selected from the group consisting of gallium, gallium alloys, and mixtures thereof, a boron nitride particulate filler, and a silicone resin, wherein said liquid metal and particulate filler are present in a volume ratio of about 1:0.4 to about 1: 10. A method of making and using such a composition is also provided.

摘要翻译： 一种组合物，其包含至少一种熔点低于35℃的液态金属; 至少一种电绝缘固体填料，包括导热材料; 提供至少一种树脂。 该组合物是导热和电绝缘的，并且在制备包括发热和散热结构的电子器件中具有实用价值。 在一种情况下，提供了一种组合物，其包含选自镓，镓合金及其混合物的液态金属，氮化硼颗粒填料和硅树脂，其中所述液态金属和颗粒填料存在于体积 比例为约1:0.4至约1:10。还提供了制备和使用这种组合物的方法。