公开(公告)号：US09041197B2

公开(公告)日：2015-05-26

申请号：US14482422

申请日：2014-09-10

申请人： Mitsubishi Electric Corporation

发明人： Takashi Motoda

IPC分类号： H01L23/34 ,  H01L33/32 ,  H01L23/492 ,  H01L23/373 ,  H01S5/022 ,  H01L33/30 ,  H01L33/48 ,  H01S5/30 ,  H01S5/024

CPC分类号： H01L33/32 ,  H01L23/3733 ,  H01L23/3736 ,  H01L23/4924 ,  H01L33/30 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01S5/02236 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/3013 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon. A stem is connected to the element securing member, and a cap is secured to the stem. The cap covers the semiconductor element and the element securing member. The stem and the element securing member are made of the same material.

摘要翻译： 半导体器件包括具有GaAs，InP或GaN的衬底的半导体元件和通过焊料接合到半导体元件的元件固定构件。 元件固定构件是Cu和碳的复合材料或Al和碳的复合材料。 杆连接到元件固定构件，并且帽固定到杆上。 盖覆盖半导体元件和元件固定构件。 杆和元件固定构件由相同的材料制成。

公开(公告)号：US09041191B2

公开(公告)日：2015-05-26

申请号：US13300565

申请日：2011-11-19

申请人： Martin Standing

发明人： Martin Standing

IPC分类号： H01L23/12 ,  H01L23/043 ,  H01L23/492 ,  H01L23/13 ,  H01L23/498 ,  H01L23/00 ,  H01L25/16

CPC分类号： H01L24/40 ,  H01L23/04 ,  H01L23/06 ,  H01L23/13 ,  H01L23/14 ,  H01L23/492 ,  H01L23/4924 ,  H01L23/49548 ,  H01L23/49558 ,  H01L23/49582 ,  H01L23/4985 ,  H01L24/24 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L25/165 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/40225 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/0715 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49174 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

摘要翻译： 包括导电罐的半导体封装，电气和机械地附接到罐的内表面的功率半导体器件，以及与罐内的功率半导体器件复合封装的IC半导体器件。

公开(公告)号：US09029995B2

公开(公告)日：2015-05-12

申请号：US14037489

申请日：2013-09-26

申请人： Renesas Electronics Corporation

发明人： Katsuhiko Funatsu ,  Tomoaki Uno ,  Toru Ueguri ,  Yasushi Takahashi

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49513 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4924 ,  H01L23/495 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/38 ,  H01L24/40 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： To enhance the reliability of connection between a semiconductor chip and a metal plate by ensuring sufficiently the thickness of a conductive material interposed between the semiconductor chip and the metal plate. A lead frame is arranged over a jig and a clip frame is arranged over protruding portions provided on the jig. In this state, a heating process (reflow) is performed. In this case, high melting point solders filling first spaces are melted in a state in which the first space is formed between a High-MOS chip and a High-MOS clip and the first space is formed between a Low-MOS chip and a Low-MOS clip. At this time, even when the high melting point solder is melted in the first space, the size (in particular, the height) of the first space does not change and the first space is maintained.

摘要翻译： 通过确保插入在半导体芯片和金属板之间的导电材料的厚度充分地提高半导体芯片和金属板之间的连接的可靠性。 引线框架布置在夹具上方，并且夹具框架布置在设置在夹具上的突出部分上。 在该状态下，进行加热处理（回流）。 在这种情况下，填充第一空间的高熔点焊料在高MOS芯片和高MOS夹之间形成第一空间的状态下熔化，并且第一空间形成在低MOS芯片与低电压 -MOS剪辑。 此时，即使高熔点焊料在第一空间中熔化，第一空间的尺寸（特别是高度）也不变，保持第一空间。

公开(公告)号：US20140159054A1

公开(公告)日：2014-06-12

申请号：US13950904

申请日：2013-07-25

申请人： ROHM CO., LTD.

发明人： Hirotaka OTAKE ,  Toshio HANADA

IPC分类号： H01L23/13 ,  H01L23/00 ,  H01L29/20 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L23/053 ,  H01L21/566 ,  H01L23/13 ,  H01L23/16 ,  H01L23/3107 ,  H01L23/3675 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/48 ,  H01L23/4924 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/16 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/165 ,  H01L25/18 ,  H01L29/0603 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/05553 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3511 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： There is provided a power module semiconductor device allowing reduction in size and weight of a thin type SiC power module. The power module semiconductor device (1) includes: a ceramic substrate (10); a first pattern (D (K4)) of a first copper plate layer (10a) disposed on a surface of the ceramic substrate; a first semiconductor chip (Q4) disposed on the first pattern; a first pillar connection electrode (18o) disposed on the first pattern; and an output terminal (O) connected to the first pillar connection electrode.

摘要翻译： 提供了能够减小薄型SiC功率模块的尺寸和重量的功率模块半导体器件。 功率模块半导体器件（1）包括：陶瓷衬底（10）; 设置在陶瓷基板的表面上的第一铜板层（10a）的第一图案（D（K4））; 设置在第一图案上的第一半导体芯片（Q4） 设置在第一图案上的第一柱连接电极（18o） 以及连接到第一支柱连接电极的输出端子（O）。

公开(公告)号：US08022551B2

公开(公告)日：2011-09-20

申请号：US11399856

申请日：2006-04-07

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L29/40

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

摘要翻译： 在半导体器件和衬底之间形成的每一个接合点包括Cu的金属球或Sn的其它材料和化合物以及金属球，金属球通过化合物结合在一起。

公开(公告)号：US20100314072A1

公开(公告)日：2010-12-16

申请号：US12483147

申请日：2009-06-11

申请人： Hsing-Chung Lee ,  Rajiv Tandon ,  Ralph Remsburg

发明人： Hsing-Chung Lee ,  Rajiv Tandon ,  Ralph Remsburg

IPC分类号： H01L23/36 ,  B23P11/00 ,  F28F7/00

CPC分类号： H01L23/4924 ,  H01L23/3735 ,  H01L23/473 ,  H01L2924/0002 ,  Y10T29/49826 ,  Y10T29/49968 ,  H01L2924/00

摘要： Base plate apparatus for mounting IGBT modules, the base plate apparatus includes a base plate with a mounting surface and an opposed surface. A tailored coefficient of thermal expansion interface layer is directly bonded to the mounting surface of the base plate and forms a mounting surface for mounting IGBT modules. The interface layer has a coefficient of thermal expansion ranging from approximately 4 ppm/° C. to approximately 12 ppm/° C.

摘要翻译： 用于安装IGBT模块的基板装置，基板装置包括具有安装表面和相对表面的基板。 定制的热膨胀界面层系数直接接合到基板的安装面上，形成安装IGBT模块的安装面。 界面层的热膨胀系数为约4ppm /℃至约12ppm /℃。

公开(公告)号：US07659614B2

公开(公告)日：2010-02-09

申请号：US12116916

申请日：2008-05-07

申请人： Vivek Mehrotra

发明人： Vivek Mehrotra

IPC分类号： H01L23/12

CPC分类号： H05K3/3463 ,  H01L23/3735 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3651 ,  H05K1/0306 ,  H05K2203/0278 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012

摘要： A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.

摘要翻译： 一种形成包含SiC或其他半导体器件的封装的方法，其利用瞬态液相（TLP）接合结合到其它部件或导电表面，以使用导电金属的原位形成的三元或四元混合物和使用TLP产生的器件产生高温熔点键 三元或四元材料的键。 组合物满足互连或接头的相互冲突的要求，其可以暴露于高温下，并且在导热，导电，空隙和抗蠕变性，耐腐蚀性以及在温度和功率循环方面是可靠的。

公开(公告)号：US20070031279A1

公开(公告)日：2007-02-08

申请号：US11399856

申请日：2006-04-07

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： C22C9/02

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

摘要翻译： 在半导体器件和衬底之间形成的每一个接合点包括Cu的金属球或Sn的其它材料和化合物以及金属球，金属球通过化合物结合在一起。

公开(公告)号：US20060151871A1

公开(公告)日：2006-07-13

申请号：US11031435

申请日：2005-01-07

申请人： Vivek Mehrotra

发明人： Vivek Mehrotra

IPC分类号： H01L23/15 ,  H01L21/58

CPC分类号： H05K3/3463 ,  H01L23/3735 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3651 ,  H05K1/0306 ,  H05K2203/0278 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012

摘要： A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.

摘要翻译： 一种形成包含SiC或其他半导体器件的封装的方法，其利用瞬态液相（TLP）接合结合到其它部件或导电表面，以使用导电金属的原位形成的三元或四元混合物和使用TLP产生的器件产生高温熔点键 三元或四元材料的键。 组合物满足互连或接头的相互冲突的要求，其可以暴露于高温下，并且在导热，导电，空隙和抗蠕变性，耐腐蚀性以及在温度和功率循环方面是可靠的。

公开(公告)号：US20050145997A1

公开(公告)日：2005-07-07

申请号：US10996681

申请日：2004-11-24

申请人： Isabell Buresch

发明人： Isabell Buresch

IPC分类号： H05K1/09 ,  B32B15/01 ,  C22C13/00 ,  C22C30/04 ,  C23C28/02 ,  C23C30/00 ,  C25D5/10 ,  C25D7/00 ,  H01L23/492 ,  H01L23/50 ,  H01R13/03 ,  H05K3/24 ,  H01L21/301 ,  H01L23/495

CPC分类号： H05K3/244 ,  C23C28/021 ,  C23C28/023 ,  H01L23/4924 ,  H01L2924/0002 ,  H01R13/03 ,  H01L2924/00

摘要： The invention relates to a layer sequence on a substrate made from copper, a copper-based alloy, a copper-plated substrate or a nickel or a nickel-based alloy for production of a composite material, in which a covering layer, consisting of tin or a tin-based alloy, which is arranged at least over part of the substrate, a barrier layer, which is located between the substrate and the covering layer and is in direct contact with the substrate, the barrier layer consisting of at least one element selected from the group consisting of Fe, Co, Nb, Mo or Ta, and an intermediate layer and a reaction layer, which is located between the barrier layer and the covering layer, the intermediate layer consisting of at least one element selected from the group consisting of Cu and Ni. The reaction layer required between covering layer and intermediate layer consists of Ag, an -Ag alloy or Pt and Pd and its alloys. Furthermore, the invention relates to a process for producing a composite material from the layer sequence with a subsequent heat treatment.

摘要翻译： 本发明涉及一种由铜制成的基板上的层序，铜基合金，镀铜基板或镍或镍基合金，用于制造复合材料，其中由锡组成的覆盖层 或至少布置在衬底的一部分上的锡基合金，位于衬底和覆盖层之间并与衬底直接接触的阻挡层，阻挡层由至少一个元件构成 选自由Fe，Co，Nb，Mo或Ta组成的组，以及位于阻挡层和覆盖层之间的中间层和反应层，所述中间层由选自以下的至少一种元素 由Cu和Ni组成。 覆盖层和中间层之间所需的反应层由Ag，-Ag合金或Pt和Pd及其合金组成。 此外，本发明涉及一种由层序制备复合材料的方法，随后进行热处理。