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公开(公告)号:CN102651357B
公开(公告)日:2016-09-28
申请号:CN201210034217.5
申请日:2012-02-15
申请人: 精工爱普生株式会社
发明人: 今井英生
IPC分类号: H01L23/48 , H01L25/065
CPC分类号: H01L23/481 , H01L21/76898 , H01L23/562 , H01L25/0657 , H01L25/074 , H01L2224/03462 , H01L2224/0401 , H01L2224/05009 , H01L2224/05553 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05609 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/06181 , H01L2224/11462 , H01L2224/11464 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/13144 , H01L2224/16146 , H01L2224/16147 , H01L2224/16237 , H01L2224/8114 , H01L2224/81191 , H01L2224/81895 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/01327 , H01L2924/00
摘要: 本发明提供半导体装置、传感器以及电子设备,该传感器具有该半导体装置。在形成有突起电极的第二基板上层叠形成有贯通电极的第一基板,在贯通电极中具有凹部,突起电极进入并层叠在凹部,突起电极的顶端宽度比凹部的开口宽度小。
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公开(公告)号:CN105304503A
公开(公告)日:2016-02-03
申请号:CN201510291027.5
申请日:2015-05-29
申请人: 应用材料公司
IPC分类号: H01L21/48 , H01L23/498
CPC分类号: H01L24/13 , C23F1/26 , C23F1/38 , H01L21/4846 , H01L23/49811 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/94 , H01L2224/02311 , H01L2224/02321 , H01L2224/02331 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/03614 , H01L2224/03831 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05073 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05187 , H01L2224/05609 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/11005 , H01L2224/11013 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11831 , H01L2224/13006 , H01L2224/13018 , H01L2224/13027 , H01L2224/13083 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13147 , H01L2224/13155 , H01L2224/13563 , H01L2224/1357 , H01L2224/13666 , H01L2224/94 , H01L2224/03 , H01L2224/11 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01047 , H01L2924/0105 , H01L2224/0231 , H01L2924/01029 , H01L2924/01079 , H01L2924/00012 , H01L23/498
摘要: 根据本公开内容的一个实施方式,一种形成金属特征的方法包括:使用第一蚀刻化学品蚀刻第一金属层的一部分,和使用第二蚀刻化学品蚀刻阻挡层的一部分以实现阻挡层底切,所述底切小于或等于阻挡层厚度的两倍。
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公开(公告)号:CN102842537B
公开(公告)日:2015-11-25
申请号:CN201110344854.8
申请日:2011-11-03
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/00 , H01L23/488 , H01L21/60
CPC分类号: H01L24/03 , H01L23/3114 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05571 , H01L2224/05583 , H01L2224/05609 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/11334 , H01L2224/11849 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16147 , H01L2224/16237 , H01L2224/81191 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/8191 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2924/01029 , H01L2924/00012 , H01L2924/01082 , H01L2924/01046 , H01L2924/01079 , H01L2924/01047 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要: 一种半导体器件包括:势垒层,位于焊料凸块和后钝化互连(PPI)层之间。势垒层由无电镀镍(Ni)层、无电镀钯(Pd)层、或者浸渍(Au)层中的至少一个形成。
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公开(公告)号:CN102569173B
公开(公告)日:2015-07-01
申请号:CN201110402768.8
申请日:2011-12-02
申请人: 三星电子株式会社
IPC分类号: H01L21/768 , H01L21/311
CPC分类号: H01L21/76898 , H01L21/6835 , H01L23/3128 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L2221/68327 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/036 , H01L2224/0401 , H01L2224/05009 , H01L2224/05018 , H01L2224/05556 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05609 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/81191 , H01L2224/81815 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/01029 , H01L2924/01327 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2224/05655 , H01L2924/00 , H01L2924/00012
摘要: 本发明公开了一种制造半导体装置的方法。在制造半导体装置的方法中,准备具有第一表面和与第一表面相对的第二表面的基底。在基底的将形成贯通电极的区域中形成牺牲层图案。牺牲层图案沿基底的厚度方向从基底的第一表面延伸。在基底的第一表面上形成上部布线层。上部布线层包括位于牺牲层图案上的布线。将基底的第二表面部分地去除以暴露牺牲层图案。从基底的第二表面去除牺牲层图案,以形成暴露布线的开口。在开口中形成要电连接到布线的贯通电极。
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公开(公告)号:CN1816952A
公开(公告)日:2006-08-09
申请号:CN200480018816.1
申请日:2004-06-18
申请人: 夏普株式会社
IPC分类号: H01S5/022
CPC分类号: H01S5/02272 , H01L24/45 , H01L33/62 , H01L2224/05114 , H01L2224/05117 , H01L2224/05124 , H01L2224/05138 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05178 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05605 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05617 , H01L2224/05618 , H01L2224/0562 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/45 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/12041 , H01S5/02212 , H01S5/02476 , H01S5/2231 , H01S5/32341 , H01L2224/48091 , H01L2924/00 , H01L2924/01014 , H01L2924/01032 , H01L2924/01021 , H01L2924/01057 , H01L2924/01039 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01062 , H01L2924/01063 , H01L2924/01065 , H01L2924/01052 , H01L2224/43 , H01L2924/01006
摘要: 公开了一种具有出色可靠性和长寿命的氮化物半导体发光器件及制造这样的氮化物半导体发光器件的方法。氮化物半导体发光芯片安装在次底座(103)上,该芯片中,氮化物半导体层和第一电极(211)形成在导电衬底的前面上,第二电极(212)形成在导电衬底的背面上。安装有氮化物半导体发光芯片的次底座(103)安装在管座(105)上,由此形成氮化物半导体发光器件。
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公开(公告)号:CN1636271A
公开(公告)日:2005-07-06
申请号:CN02823683.1
申请日:2002-11-13
申请人: 自由度半导体公司
IPC分类号: H01L21/60
CPC分类号: H01L24/12 , H01L23/3171 , H01L23/3192 , H01L23/5329 , H01L24/05 , H01L24/11 , H01L24/48 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05082 , H01L2224/05599 , H01L2224/05609 , H01L2224/05611 , H01L2224/05618 , H01L2224/05623 , H01L2224/05644 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/0567 , H01L2224/05671 , H01L2224/05679 , H01L2224/1147 , H01L2224/13099 , H01L2224/1411 , H01L2224/48091 , H01L2224/48463 , H01L2224/85207 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2224/45099 , H01L2924/00
摘要: 按照一种实施方式,应力缓冲层(40)被形成在功率金属结构(90)与钝化层(30)之间。应力缓冲层(40)通过功率金属结构(90)减小施加于钝化层(30)上的应力的作用。按照另一实施方式,功率金属结构(130A)被分为多段(1091),从而通过籽层(1052)和粘附/阻挡层(1050)的剩余部分在各段(1090)之间保持电连续性。独立的多段(1090)施加比相当尺寸的连续功率金属结构(9)更低的峰值应力。
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公开(公告)号:CN103681564B
公开(公告)日:2017-01-18
申请号:CN201310347355.3
申请日:2013-08-09
申请人: 英飞凌科技股份有限公司
IPC分类号: H01L23/488 , H01L21/48 , H01L21/60
CPC分类号: H01L24/27 , H01L23/14 , H01L23/49579 , H01L23/49883 , H01L24/05 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/05609 , H01L2224/05611 , H01L2224/05618 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/2741 , H01L2224/2929 , H01L2224/29294 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/32245 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8382 , H01L2224/8384 , H01L2224/83856 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/00
摘要: 本发明涉及电子装置和制造电子装置的方法,一种半导体装置包括导电载体和设置在所述载体上的半导体芯片。所述半导体装置还包括设置在所述载体和所述半导体芯片之间的多孔扩散焊料层。
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公开(公告)号:CN103050461A
公开(公告)日:2013-04-17
申请号:CN201210192147.6
申请日:2012-06-11
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/488 , H01L23/31
CPC分类号: H01L24/11 , H01L21/76841 , H01L23/3114 , H01L23/3171 , H01L23/3192 , H01L23/525 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/02235 , H01L2224/02255 , H01L2224/0226 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05571 , H01L2224/05609 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/11334 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2924/00014 , H01L2924/12042 , H01L2924/15788 , H01L2924/014 , H01L2924/00012 , H01L2924/01082 , H01L2924/01046 , H01L2924/01079 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要: 一种半导体器件包括:依次形成在半导体衬底上的钝化层、第一保护层、互连层、以及第二保护层。互连层具有暴露部分,在该暴露部分上形成有阻挡层和焊料凸块。钝化层、第一保护层、互连层和第二保护层中的至少一层包括形成在导电焊盘区域之外的区域中的至少一个槽状件。本发明提供了钝化后互连结构。
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公开(公告)号:CN102810623A
公开(公告)日:2012-12-05
申请号:CN201210083699.3
申请日:2012-03-27
申请人: LG伊诺特有限公司
IPC分类号: H01L33/62 , F21S2/00 , F21Y101/02
CPC分类号: H01L33/62 , F21K9/27 , F21Y2113/13 , F21Y2115/10 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0753 , H01L2224/05609 , H01L2224/05623 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/05671 , H01L2224/05676 , H01L2224/05679 , H01L2224/0568 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/4848 , H01L2224/48499 , H01L2224/48997 , H01L2224/4911 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/181 , H01L2924/19107 , H01L2933/0066 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48455
摘要: 公开了一种发光器件封装和照明系统。该发光器件封装包括:布置在第一引线框架上的发光器件,在该发光器件的上表面上具有电极焊盘;用于将电极焊盘和与第一引线框架间隔开的第二引线框架相互电连接的第一金属线;和布置在第二引线框架上的第一焊接球,该第一焊接球从与第一金属线和第二引线框架接触的第一接触点间隔开,其中第一焊接球布置在第一金属线和第二引线框架之间以将第一金属线和第二引线框架相互电连接。在该发光器件封装中,在金属线焊接时使用焊接球固定金属线,由此防止金属线在与引线框架间的焊接部分处从引线框架分离。而且,金属线经由焊接球而被电连接到引线框架,由此改善金属线焊接的可靠性。
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公开(公告)号:CN102651357A
公开(公告)日:2012-08-29
申请号:CN201210034217.5
申请日:2012-02-15
申请人: 精工爱普生株式会社
发明人: 今井英生
IPC分类号: H01L23/48 , H01L25/065
CPC分类号: H01L23/481 , H01L21/76898 , H01L23/562 , H01L25/0657 , H01L25/074 , H01L2224/03462 , H01L2224/0401 , H01L2224/05009 , H01L2224/05553 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05609 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/06181 , H01L2224/11462 , H01L2224/11464 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/13144 , H01L2224/16146 , H01L2224/16147 , H01L2224/16237 , H01L2224/8114 , H01L2224/81191 , H01L2224/81895 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/01327 , H01L2924/00
摘要: 本发明提供半导体装置、传感器以及电子设备,该传感器具有该半导体装置。在形成有突起电极的第二基板上层叠形成有贯通电极的第一基板,在贯通电极中具有凹部,突起电极进入并层叠在凹部,突起电极的顶端宽度比凹部的开口宽度小。
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