摘要:
PROBLEM TO BE SOLVED: To provide copper alloy wiring for semiconductor capable of preventing contamination around the wiring due to diffusion of active Cu, by imparting a self-diffusion suppression function to the copper alloy wiring for semiconductor itself, while enhancing electromigration (EM) tolerance, corrosion resistance, and the like, and in which a barrier layer can be formed arbitrarily and easily, while simplifying the deposition process of the copper alloy wiring for semiconductor, and to provide a sputtering target for forming the wiring, and a method for forming the copper alloy wiring for semiconductor.SOLUTION: A copper alloy wiring for semiconductor including a self-diffusion suppression function contains 0.05-5 wt% of Mn, and in which the total amount of one or more element selected from Sb, Zr, Ti, Cr, Ag, Au, Cd, In, As is 10 wt or less, and the reminder is Cu.
摘要:
The present invention provides a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element and that enables loading of the other semiconductor element and improvement in the manufacturing yield of a semiconductor device by preventing deformation and cutting of the bonding wire, and a dicing die bond film. The die bond film of the present invention is a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element, in which at least a first adhesive layer that enables a portion of the bonding wire to pass through inside thereof by burying the portion upon press bonding and a second adhesive layer that prevents the other semiconductor element from contacting with the bonding wire are laminated.
摘要:
A method for manufacturing a semiconductor device has a step of forming a first substrate; a step of facing a first main electrode to the first metal foil, and electrically connecting the first main electrode and the first metal foil; a step of facing a second main electrode to the second metal foil, and electrically connecting the second main electrode and the second metal foil; a step of forming a second substrate; and steps of facing a surface side of the second substrate to a surface side of the first substrate; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element; and electrically connecting the fourth metal foil and a fourth main electrode provided on a main surface of the second semiconductor element.
摘要:
A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.
摘要:
Disclosed are a structure and method for mounting a bare chip or a chip size package with high connection reliability. Specifically, a bump for electrically connecting an electrode pad of a semiconductor element and an electrode pad of a wiring board is composed of a plurality of conductive particles, each of which is obtained by forming a metal layer around a core portion which is composed of a first resin. The metal layers as the outermost layers of the conductive particles are melted and combine the conductive particles together, and the conductive particles are covered and protected by a second resin.