公开(公告)号：US09741620B2

公开(公告)日：2017-08-22

申请号：US14749529

申请日：2015-06-24

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Guilian Gao ,  Liang Wang ,  Hong Shen ,  Arkalgud R. Sitaram

IPC: H01L21/00 ,  H01L21/70 ,  H01L21/82 ,  H01L21/56 ,  H01L23/00 ,  H01L21/48 ,  H01L23/538 ,  H01L23/31

CPC classification number: H01L21/82 ,  H01L21/486 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/96 ,  H01L24/97 ,  H01L24/98 ,  H01L2224/04105 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/3512

Abstract: A device and method of forming the device that includes cavities formed in a substrate of a substrate device, the substrate device also including conductive vias formed in the substrate. Chip devices, wafers, and other substrate devices can be mounted to the substrate device. Encapsulation layers and materials may be formed over the substrate device in order to fill the cavities.

公开(公告)号：US09666559B2

公开(公告)日：2017-05-30

申请号：US14809036

申请日：2015-07-24

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen

IPC: H01L21/44 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367 ,  H01L25/18 ,  B81B7/00 ,  H01L23/538 ,  H01L21/56 ,  H01L25/00 ,  H01L23/48 ,  H01L21/768 ,  B81C1/00 ,  H01L23/31 ,  H01L25/10

CPC classification number: H01L24/09 ,  B81B7/008 ,  B81B2207/07 ,  B81C1/0023 ,  H01L21/565 ,  H01L21/76877 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/34 ,  H01L23/367 ,  H01L23/481 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/89 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/10 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/33517 ,  H01L2224/48135 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/80001 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92133 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/1511 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F; “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.

公开(公告)号：US20170099474A1

公开(公告)日：2017-04-06

申请号：US15280661

申请日：2016-09-29

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Guilian Gao ,  Arkalgud R. Sitaram

IPC: H04N9/43 ,  H04N9/097 ,  H04N9/04 ,  G06T1/20 ,  H04N5/374 ,  H01L31/0232 ,  G02B27/10 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/032 ,  H04N5/33 ,  H04N9/76

CPC classification number: H04N9/43 ,  G02B27/1013 ,  G06T1/20 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H04N5/332 ,  H04N5/374 ,  H04N9/045 ,  H04N9/097 ,  H04N9/76

Abstract: HD color video using monochromatic CMOS image sensors integrated in a 3D package is provided. An example 3DIC package for color video includes a beam splitter to partition received light of an image stream into multiple light outputs. Multiple monochromatic CMOS image sensors are each coupled to one of the multiple light outputs to sense a monochromatic image stream at a respective component wavelength of the received light. Each monochromatic CMOS image sensor is specially constructed, doped, controlled, and tuned to its respective wavelength of light. A parallel processing integrator or interposer chip heterogeneously combines the respective monochromatic image streams into a full-spectrum color video stream, including parallel processing of an infrared or ultraviolet stream. The parallel processing of the monochromatic image streams provides reconstruction to HD or 4K HD color video at low light levels. Parallel processing to one interposer chip also enhances speed, spatial resolution, sensitivity, low light performance, and color reconstruction.

公开(公告)号：US09583426B2

公开(公告)日：2017-02-28

申请号：US14533728

申请日：2014-11-05

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Gabriel Z. Guevara ,  Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi

IPC: H01L23/498 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00

CPC classification number: H01L23/49822 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49805 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/09 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/15192 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: An interposer (110) has contact pads at the top and/or bottom surfaces for connection to circuit modules (e.g. ICs 112). The interposer includes a substrate made of multiple layers (110.i). Each layer can be a substrate (110S), possibly a ceramic substrate, with circuitry. The substrates extend vertically. Multiple interposers are fabricated in a single structure (310) made of vertical layers (310.i) corresponding to the interposers' layers. The structure is diced along horizontal planes (314) to provide the interposers. An interposer's vertical conductive lines (similar to through-substrate vias) can be formed on the substrates' surfaces before dicing and before all the substrates are attached to each other. Thus, there is no need to make through-substrate holes for the vertical conductive lines. Non-vertical features can also be formed on the substrates' surfaces before the substrates are attached to each other. Other embodiments are also provided.

Abstract translation: 插入器（110）在顶部和/或底部表面处具有用于连接到电路模块（例如IC 112）的接触焊盘。 插入器包括由多层（110.i）制成的衬底。 每个层可以是具有电路的衬底（110S），可能是陶瓷衬底。 基板垂直延伸。 在由对应于插入层的垂直层（310.i）制成的单个结构（310）中制造多个插入件。 沿着水平面（314）切割结构以提供插入件。 在切割之前和所有基板彼此附接之前，可以在基板表面上形成插入件的垂直导线（类似于贯穿基板通孔）。 因此，不需要对垂直导线进行贯通基板孔。 在基板彼此附接之前，也可以在基板表面上形成非垂直特征。 还提供了其他实施例。

公开(公告)号：US09508638B2

公开(公告)日：2016-11-29

申请号：US14833979

申请日：2015-08-24

Applicant: INVENSAS CORPORATION

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L21/02 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L28/60 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5223 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/105 ,  H01L25/11 ,  H01L25/115 ,  H01L25/165 ,  H01L25/50 ,  H01L28/40 ,  H01L28/65 ,  H01L2224/05009 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1205 ,  H01L2924/15311 ,  H01L2924/16153 ,  H01L2924/00

Abstract: A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.

公开(公告)号：US09461196B2

公开(公告)日：2016-10-04

申请号：US14605550

申请日：2015-01-26

Applicant: Invensas Corporation

Inventor： Ilyas Mohammed ,  Liang Wang

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/18 ,  H01L33/16 ,  H05B33/14 ,  H05B33/22 ,  H01L33/14 ,  H01L33/36 ,  H01L33/48

CPC classification number: H01L33/0012 ,  H01L33/0095 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/36 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H05B33/14 ,  H05B33/22

Abstract: Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier.

公开(公告)号：US20160260687A1

公开(公告)日：2016-09-08

申请号：US14639942

申请日：2015-03-05

Applicant: Invensas Corporation

Inventor： Guilian Gao ,  Charles G. Woychik ,  Cyprian Emeka Uzoh ,  Liang Wang

IPC: H01L25/065 ,  H01L23/373 ,  H01L23/00 ,  H01L25/00 ,  H01L23/367

CPC classification number: H01L25/0657 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/373 ,  H01L24/00 ,  H01L24/11 ,  H01L24/17 ,  H01L24/27 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/11334 ,  H01L2224/16057 ,  H01L2224/16145 ,  H01L2224/2761 ,  H01L2224/32245 ,  H01L2224/81815 ,  H01L2224/838 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06589 ,  H01L2924/01006 ,  H01L2924/10253

Abstract: A device with thermal control is presented. In some embodiments, the device includes a plurality of die positioned in a stack, each die including a chip, interconnects through a thickness of the chip, metal features of electrically conductive composition connected to the interconnects on a bottom side of the chip, and adhesive or underfill layer on the bottom side of the chip. At least one thermally conducting layer, which can be a pyrolytic graphite layer, a layer formed of carbon nanotubes, or a graphene layer, is coupled between a top side of one of the plurality of die and a bottom side of an adjoining die in the stack. A heat sink can be coupled to the thermally conducting layer.

Abstract translation: 介绍了一种具有热控制功能的设备。 在一些实施例中，该装置包括位于堆叠中的多个管芯，每个管芯包括芯片，通过芯片的厚度相互连接，导电组合物的金属特征连接到芯片的底侧上的互连件和粘合剂 或底部填充层。 至少一个热传导层，其可以是热解石墨层，由碳纳米管形成的层或石墨烯层，被耦合在多个管芯中的一个的顶侧和邻接的管芯的底侧之间 堆栈 散热器可以耦合到导热层。

公开(公告)号：US20160155695A1

公开(公告)日：2016-06-02

申请号：US15005220

申请日：2016-01-25

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Rajesh Katkar

IPC: H01L23/498 ,  H01L23/48 ,  H01L23/538 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/055 ,  H01L21/2885 ,  H01L21/4803 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/04 ,  H01L23/10 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/315 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Stacked dies (110) are encapsulated in an interposer's cavity (304) by multiple encapsulant layers (524) formed of moldable material. Conductive paths (520, 623) connect the dies to the cavity's bottom all (304B) and, through TSVs passing through the bottom wall, to a conductor below the interposer. The conductive paths can be formed in segments each of which is formed in a through-hole (514) in a respective encapsulant layer. Each segment can be formed by electroplating onto a lower segment; the electroplating current can be provided from below the interposer through the TSVs and earlier formed segments. Other features are also provided.

公开(公告)号：US20160079215A1

公开(公告)日：2016-03-17

申请号：US14953565

申请日：2015-11-30

Applicant: Invensas Corporation

Inventor： Belgacem Haba ,  Ilyas Mohammed ,  Liang Wang

IPC: H01L25/10 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/13 ,  H01L23/3157 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81805 ,  H01L2224/92125 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06582 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15333 ,  H01L2924/014 ,  H01L2924/00

Abstract: A microelectronic assembly can be made by joining first and second subassemblies by electrically conductive masses to connect electrically conductive elements on support elements of each subassembly. A patterned layer of photo-imageable material may overlie a surface of one of the support elements and have openings with cross-sectional dimensions which are constant or monotonically increasing with height from the surface of that support element, where the masses extend through the openings and have dimensions defined thereby. An encapsulation can be formed by flowing an encapsulant into a space between the joined first and second subassemblies.

公开(公告)号：US20150295151A1

公开(公告)日：2015-10-15

申请号：US14466993

申请日：2014-08-23

Applicant: Invensas Corporation

Inventor： Ilyas Mohammed ,  Liang Wang

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/64 ,  H01L33/06 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L33/62 ,  H01L33/06 ,  H01L33/382 ,  H01L33/42 ,  H01L33/502 ,  H01L33/58 ,  H01L33/60 ,  H01L33/644 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode.

Abstract translation: 具有通孔的高性能发光二极管。 根据本发明的第一实施例，制品包括发光二极管。 发光二极管包括多个填充的通孔，其被配置为将发光二极管的一侧上的掺杂区域连接到发光二极管的另一侧上的多个触点。 填充的通孔可以包含少于发光二极管表面积的10％。